Foshan MJE13009X9 Silicon npn transistor in a to-3p plastic package Datasheet

MJE13009X9
Rev.E Mar.-2016
描述
/
DATA SHEET
Descriptions
TO-3P 塑封封装 NPN 半导体三极管。Silicon NPN Transistor in a TO-3P Plastic Package.
特征
/ Features
快速转换。
High Speed Switching
用途
/
Applications
节能灯电路。
High frequency electronic lighting ballast applications.
内部等效电路
引脚排列
/ Equivalent Circuit
/ Pinning
PIN1:Base
放大及印章代码
PIN 2:Collector
PIN 3:Emitter
/ hFE Classifications & Marking
见印章说明。See Marking Instructions.
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MJE13009X9
Rev.E Mar.-2016
极限参数
/
DATA SHEET
Absolute Maximum Ratings(Ta=25℃)
参数
Parameter
符号
Symbol
数值
Rating
单位
Unit
Collector to Base Voltage
VCBO
700
V
Collector to Emitter Voltage
VCEO
400
V
Emitter to Base Voltage
VEBO
9.0
V
Collector Current - Continuous
IC
8.0
A
Collector Power Dissipation
PC
2.0
W
Collector Power Dissipation
PC(Tc=25℃)
90
W
Tj
150
℃
Tstg
-55~150
℃
Junction Temperature
Storage Temperature Range
电性能参数
/ Electrical Characteristics(Ta=25℃)
参数
Parameter
符号
Symbol
测试条件
Test Conditions
最小值 典型值 最大值 单位
Min
Typ
Max
Unit
Collector to Base Voltage
VCBO
IC=1mA
IE=0
700
V
Collector to Emitter Voltage
VCEO
IC=10mA
IB=0
400
V
Emitter to Base Voltage
VEBO
IE=1mA
IC=0
9
V
Collector Cut-Off Current
ICBO
VCB=700V
IE=0
0.1
mA
Collector cut-off current
ICEO
VCE=400V
IB=0
0.1
mA
Emitter Base Cut-Off Current
IEBO
VEB=9.0V
IC=0
0.1
mA
DC Current Gain
hFE
VCE=5.0V
IC=2.0A
10
40
Collector to Emitter Saturation
Voltage
VCE(sat)
IC=8.0A
IB=2.0A
1.5
V
Base to Emitter Saturation Voltage
VBE(sat)
IC=8.0A
IB=2.0A
1.5
V
VCE=10V
f=1.0MHz
IC=0.5A
VCE=5V
(UI9600)
IC=0.5A
Transition Frequency
fT
Fall time
tf
Storage time
tS
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5.0
4.0
MHz
0.8
μs
9.0
μs
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MJE13009X9
Rev.E Mar.-2016
电参数曲线图
DATA SHEET
/ Electrical Characteristic Curve
SOA(DC)
hFE-Ic
hFE-Ic
Vces-IC
Vbes-IC
tS-Ta
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PC-TC
hFE-Ta
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MJE13009X9
Rev.E Mar.-2016
外形尺寸图
DATA SHEET
/ Package Dimensions
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MJE13009X9
Rev.E Mar.-2016
印章说明
/
DATA SHEET
Marking Instructions
BR
13009
X9 ****
说明:


为公司代码
13009: 

为型号代码
X9: 


为规格代码
****:


为生产批号代码,随生产批号变化。
BR:


Company Code.
13009:

X9:  

BR:
Note:
****:
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Product Type.

Specifications Code.
Lot No. Code, code change with Lot No.
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MJE13009X9
Rev.E Mar.-2016
DATA SHEET
波峰焊温度曲线图(无铅)
/
Temperature Profile for Dip Soldering(Pb-Free)
说明:
Note:
1、预热温度 25~150℃,时间 60~90sec;
1.Preheating:25~150℃, Time:60~90sec.
2、峰值温度 255±5℃,时间持续为 5±0.5sec;
2.Peak Temp.:255±5℃, Duration:5±0.5sec.
3、焊接制程冷却速度为 2~10℃/sec.
3. Cooling Speed: 2~10℃/sec.
耐焊接热试验条件
/
Resistance to Soldering Heat Test Conditions
温度:270±5℃
包装规格
Package Type
封装形式
使用说明
Temp.:270±5℃
Time:10±1 sec
/ Packaging SPEC.
套管包装
TO-3P
时间:10±1 sec.
/ TUBE
Units 包装数量
Dimension
包装尺寸
3
(unit:mm )
Units/Tube
只/套管
Tubes/Inner Box
套管/盒
Units/Inner Box
只/盒
Inner Boxes/Outer Box
盒/箱
Units/Outer Box
只/箱
Tube 套管
Inner Box 盒
Outer Box 箱
30
15
450
5
2250
497.5×46×8
555×164×50
575×290×180
/ Notices
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