Weitron MUN5113DW Dual bias resistor transistor pnp silicon Datasheet

MUN5111DW Series
2
3
Dual Bias Resistor Transistor
PNP Silicon
1
6 5
1
4
5
6
2
4
3
SOT-363(SC-88)
PNP+PNP
M aximum R atings ( TA=25 C unless otherwise noted)
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Collector Current-Continuous
Symbol
VCEO
Value
-50
VCBO
-50
Unit
Vdc
Vdc
IC
-100
mAdc
Thermal Characteristics
Characteristics
Total Device Dissipation FR-5 Board
(1)TA=25 C
Derate above 25 C
Thermal Resistance, Junction to Ambient (1)
Junction and Storage, Temperature Range
Symbol
Max
Unit
PD
187
1.5
R θJA
670
mW
mW/ C
C/W
TJ,Tstg
-55 to +150
C
l
1.FR-4 @ minimum pad
2.FR-4 @ 1.0 l 1.0 inch Pad
Device Marking and Resistor Values
Marking
R1(K)
R2(K)
Device
Marking
R1(K)
R2(K)
MUN5111
MUN5112
MUN5113
MUN5114
MUN5115
MUN5116
MUN5130
0A
0B
0C
0D
0E
0F
0G
10
22
47
10
10
4.7
1.0
10
22
47
47
MUN5131
MUN5132
MUN5133
MUN5134
MUN5135
MUN5136
MUN5137
0H
0J
0K
0L
0M
0N
0P
2.2
4.7
4.7
22
2.2
100
47
2.2
4.7
47
47
47
100
22
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Device
1.0
WE IT R ON
MUN5111DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
Symbol
Min
Typ
Max
Collector-Emitter Breakdown Voltage
(IC=-2.0mA, IB =0)
V(BR)CEO
-50
-
-
V
Collector-Base Breakdown Voltage
(IC=-10 uA ,IE=0)
V(BR)CBO
-50
-
-
V
ICBO
-
-
-100
nA
ICEO
-
-
-500
nA
IEBO
-
-
-0.5
-0.2
-0.1
-0.2
-0.9
-1.9
-4.3
-2.3
-1.5
-0.18
-0.13
-0.2
-0.05
-0.13
mA
VCE(sat)
-
-
-0.25
Vdc
Characteristics
Unit
Off Characteristics
Collector-Base Cutoff Voltage
(VCB=-50 V, IE =0)
Collector-Emitter Cutoff Current
(ICE=-50V, IB =0)
Emitter-Base Cutoff Current
(VEB=-6.0V, IC =0)
MUN5111DW
MUN5112DW
MUN5113DW
MUN5114DW
MUN5115DW
MUN5116DW
MUN5130DW
MUN5131DW
MUN5132DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5136DW
MUN5137DW
On Characteristics
Collector-Emitter Saturation Voltage (IC =-10mA, IE =-0.3mA)
(IC =-10mA, I B =--5mA)
MUN5137DW/MUN5131DW
(IC =-10mA, I B =--1mA)
MUN5115DW/MUN5116DW
MUN5132DW/MUN5133DW/MUN5134DW
3. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%
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MUN5111DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
-
-
-
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-0.2
-4.9
-
-
Unit
On Characteristics (3)
DC Current Gain
(VCE=-10V, IC =-5.0mA)
MUN5111DW
MUN5112DW
MUN5113DW
MUN5114DW
MUN5115DW
MUN5116DW
MUN5130DW
MUN5131DW
MUN5132DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5136DW
MUN5137DW
Output Voltage(on)
(VCC=-5.0V, VB =-2.5V, RL =1.0k Ω )
MUN5111DW
MUN5112DW
MUN5113DW
MUN5114DW
MUN5115DW
MUN5116DW
MUN5130DW
MUN5131DW
MUN5132DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5136DW
MUN5137DW
VOL
Output Voltage(off ) (VCC =-5.0V, VB =-0.5V, R L =1.0k Ω )
(VCC =-5.0V, VB =-0.05V, RL =1.0k Ω )
MUN5130DW
MUN5115DW
(VCC =-5.0V, VB =-0.25V, RL =1.0k Ω )
MUN5116DW
MUN5131DW
MUN5133DW
VOH
(VCC =-5.0V, VB =-3.5V, R L =1.0k Ω )
(VCC=-5.0V, V B=-5.5V, R L=1.0k Ω )
(VCC=-5.0V, VB =-4.0V, R L =1.0k Ω )
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V
V
3. Pulse Test: Pulse Width 300 us, Duty Cycle 2.0%
h FE
Vdc
Vdc
WE IT R ON
MUN5111DW Series
Electrical Characteristics
(TA=25 C Unless Otherwise noted)
Characteristics
Symbol
Min
Typ
Max
Unit
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
kΩ
0.8
0.17
0.8
0.055
0.38
0.038
1.7
1.0
0.21
1.0
0.1
0.47
0.047
2.1
1.2
0.25
1.2
0.185
0.56
0.056
2.6
On Characteristics
MUN5111DW
MUN5112DW
MUN5113DW
MUN5114DW
MUN5115DW
MUN5116DW
MUN5130DW
MUN5131DW
MUN5132DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5136DW
MUN5137DW
Input Resistor
Resistor Ratio MUN5111DW/MUN5112DW
MUN5113DW/MUN5136DW
MUN5114DW
MUN5115DW/MUN5116DW
MUN5130DW/MUN5131DW/MUN5132DW
MUN5133DW
MUN5134DW
MUN5135DW
MUN5137DW
R1/R2
4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0 %
MUN5111DW1T1 Series
ALL MUN5111DW1T1 SERIES DEVICES
PD , P OWE R DIS S IPAT ION (mW)
300
250
200
150
100
50
0
- 50
R θJ A = 490 C /W
0
50
100
T A , AMB IE NT T E MP E R AT UR E (5C )
150
FIG.1 Derating Curve - ALL DEVICES
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MUN5111DW Series
MUN5111DW Series
TYPICAL ELECTRICAL CHARACTERISTICS- MUN5111DW
1000
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat), COLLECTOR VOLTAGE (VOLTS)
1
IC/IB = 10
TA = -25 C
0.1
25 C
75 C
TA = 75 C
25 C
100
10
0.01
0
20
40
VCE = 10 V
50
-25 C
1
10
IC , COLLECTOR CURRENT (mA)
IC, COLLECTOR CURRENT (mA)
FIG.3 DC Current Gain
FIG.2 V CE(sat) versus I C
100
f = 1 MHz
lE = 0 V
TA = 25 C
IC , COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
4
3
2
1
0
0
50
10
20
30
40
VR , REVERSE BIAS VOLTAGE (VOLTS)
25 C
75 C
TA = -25 C
10
1
0.1
0.01
0.001
0
VO = 5 V
1
2
3
4
5
6
7
Vin , INPUT VOLTAGE (VOLTS)
100
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = -25 C
10
25 C
75 C
1
10
20
30
IC , COLLECTOR CURRENT (mA)
40
50
FIG.6 Input Voltage versus Output Current
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8
9
10
FIG.5 Output Current versus Input Voltage
FIG.4 Output Capacitance
0.1
0
100
WE IT R ON
MUN5111DW Series
MUN5111DW Sewries
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5112DW
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
10
IC/IB = 10
1
25 C
TA = -25 C
75 C
0.1
0.01
0
20
IC , COLLECTOR CURRENT (mA)
40
1000
TA = 75 C
25 C
-25 C
100
10
50
VCE = 10 V
1
10
FIG.7 VCE(sat) versus I C
FIG.8 DC Current Gain
100
3
2
1
0
10
20
30
40
VR , REVERSE BIAS VOLTAGE (VOLTS)
50
FIG.9 Output Capacitance
V in , INPUT VOLTAGE (VOLTS)
100
25 C
75 C
f = 1 MHz
lE = 0 V
TA = 25 C
IC , COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
4
0
100
IC , COLLECTOR CURRENT (mA)
TA = -25 C
10
1
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
Vin , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
10
25 C
75 C
1
0
10
20
30
IC , COLLECTOR CURRENT (mA)
40
50
FIG.11 Input Voltage versus Output Current
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9
10
FIG.10 Output Current versus Input Voltage
TA = -25 C
0.1
8
WE IT R ON
MUN5111DW Series
MUN5111DW Series
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5112DW
1000
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
1
IC/IB = 10
TA = -25 C
25 C
75 C
0.1
0.01
0
10
20
30
IC , COLLECTOR CURRENT (mA)
VCE = 10 V
TA = 75 C
25 C
10
40
-25 C
100
1
10
IC , COLLECTOR CURRENT (mA)
FIG.12 VCE(sat) versus I C
FIG.13 DC Current Gain
1
IC , COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
100
f = 1 MHz
lE = 0 V
TA = 25 C
0.8
0.6
0.4
0.2
0
0
FIG.14 Output Capacitance
-25 C
1
0.1
0.01
VO = 5 V
1
2
3
41 5
6
7
Vin , INPUT VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
TA = -25 C
25 C
75 C
10
1
10
20
30
IC , COLLECTOR CURRENT (mA)
40
50
FIG.16 Input Voltage versus Output Current
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8
9
10
FIG.15 Output Current versus Input Voltage
100
0
25 C
TA = 75 C
10
0.001
0
50
10
20
30
40
VR , REVERSE BIAS VOLTAGE(VOLTS)
0.1
100
WE IT R ON
MUN5111DW Series
MUN5111DW Series
180
1
IC/IB = 10
hFE , DC CURRENT GAIN (NORMALIZED)
VCE(sat) , COLLECTOR VOLTAGE (VOLTS)
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5114DW
TA = -25 C
25 C
0.1
75 C
0.01
0.001
0
20
40
60
IC , COLLECTOR CURRENT (mA)
TA = 75 C
160 VCE = 10 V
25 C
140
-25 C
120
100
80
60
40
20
0
80
1
2
4
6
FIG.18 DC Current Gain
FIG.17 VCE(sat) versus IC
4.5
100
3.5
IC , COLLECTOR CURRENT (mA)
Cob , CAPACITANCE (pF)
TA = 75 C
f = 1 MHz
lE = 0 V
TA = 25 C
4
3
2.5
2
1.5
1
0.5
0
8 10 15 20 40 50 60 70 80 90 100
IC , COLLECTOR CURRENT (mA)
0
2
4
6 8 10 15 20 25 30 35 40
VR , REVERSE BIAS VOLTAGE (VOLTS)
45 50
FIG.19 Output Capacitance
-25 C
10
VO = 5 V
1
0
2
4
6
Vin , INPUT VOLTAGE (VOLTS)
V in , INPUT VOLTAGE (VOLTS)
VO = 0.2 V
25 C
TA = -25 C
75 C
1
0
10
20
30
40
IC , COLLECTOR CURRENT (mA)
50
FIG.21 Input Voltage versus Output Current
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8
10
FIG.20 Output Current versus Input Voltage
10
0.1
25 C
WE IT R ON
MUN5111DW Series
MUN5111DW Series
1000
1
75 C
0.1
-25 C
25 C
0.01
0.001
T A = -25 C
100
20
40
30
10
I C , C OLLE C TOR C UR R E NT (mA)
25 C
10
1
0
50
1
10
I C , C OLLE C TOR C UR R E NT (mA)
100
FIG.23 DC Current Gain
FIG.22 VCE(sat) versus I C
100
12
f = 1 MHz
lE = 0 V
TA = 25 C
10
I C , C OLLE C TOR C UR R E NT (mA)
C ob , C APAC ITANC E (pF )
VCE = 10 V
75 C
IC/IB = 10
hF E , DC C UR R E NT G AIN
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5115DW
8
6
4
2
75 C
10
25 C
1
0.01
0.001
0
0
5
10
20
30
45
15
25
35 40
V R , R E V E R S E B IAS V OLTAG E (V OLT S )
50
T A = -25 C
0.1
VO = 5 V
0
1
2
3
4
5
6
7
8
V in , INP UT V OLTAG E (V OLT S )
V in , INP UT V OLTAG E (V OLT S )
10
VO = 0.2 V
T A = -25 C
1
25 C
75 C
0
10
20
30
40
I C , C OLLE C TOR C UR R E NT (mA)
50
FIG.26 Input Voltage versus Output Current
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FIG.25 Output Current versus Input Voltage
FIG.24 Output Capacitance
0.1
9
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MUN5111DW Series
MUN5111DW Series
1
1000
IC/IB = 10
75 C
0.1
-25 C
25 C
0.01
0.001
0
20
40
30
10
I C , C OLLE C TOR C UR R E NT (mA)
T A = -25 C
100
25 C
10
1
50
1
10
I C , C OLLE C TOR C UR R E NT (mA)
FIG.27 VCE(sat) versus IC
100
FIG.28 DC Current Gain
12
100
f = 1 MHz
lE = 0 V
TA = 25 C
10
I C , C OLLE C TOR C UR R E NT (mA)
C ob , C APAC ITANC E (pF )
VCE = 10 V
75 C
hF E , DC C UR R E NT G AIN
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5116DW
8
6
4
2
0
0
5
10
15
20
25
30
35 40
45
V R , R E V E R S E B IAS V OLTAG E (V OLT S )
FIG.29 Output Capacitance
50
75 C
10
25 C
1
T A = -25 C
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
8
V in , INP UT V OLTAG E (V OLT S )
V in , INP UT V OLTAG E (V OLT S )
T A = -25 C
1
25 C
VO = 0.2 V
0.1
0
10
20
30
40
I C , C OLLE C TOR C UR R E NT (mA)
50
FIG.31 Input Voltage versus Output Current
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10
FIG.30 Output Current versus Input Voltage
10
75 C
9
WE IT R ON
MUN5111DW Series
MUN5111DW Series
1
1000
VCE = 10 V
IC/IB = 10
hF E , DC C UR R E NT G AIN
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5130DW
75 C
0.1
-25 C
25 C
0.01
0.001
0
5
10
15
20
25
I C , C OLLE C TOR C UR R E NT (mA)
100
75 C
10
25 C
T A = -25 C
1
30
1
10
I C , C OLLE C TOR C UR R E NT (mA)
FIG.32 VCE(sat) versus IC
100
FIG.33 DC Current Gain
I C , C OLLE C TOR C UR R E NT (mA)
C ob , C APAC ITANC E (pF )
100
TBD
75 C
10
25 C
1
T A = -25 C
0.1
0.01
0.001
VO = 5 V
0
1
V R , R E V E R S E B IAS V OLTAG E (V OLT S )
FIG.34 Output Capacitance
2
3
4
5
6
7
8
V in , INP UT V OLTAG E (V OLT S )
V in , INP UT V OLTAG E (V OLT S )
T A = -25 C
75 C
25 C
VO = 0.2 V
0.1
0
5
10
15
20
I C , C OLLE C TOR C UR R E NT (mA)
25
FIG.36 Input Voltage versus Output Current
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10
FIG.35 Output Current versus Input Voltage
10
1
9
WE IT R ON
MUN5111DW Series
MUN5111DW Series
1
1000
VCE = 10 V
IC/IB = 10
hF E , DC C UR R E NT G AIN
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5131DW
75 C
0.1
-25 C
25 C
0.01
0.001
0
5
10
15
20
25
I C , C OLLE C TOR C UR R E NT (mA)
100
75 C
10
1
30
T A = -25 C
1
10
I C , C OLLE C TOR C UR R E NT (mA)
FIG. 37 VCE(sat) versus IC
100
FIG.38 DC Current Gain
12
100
I C , C OLLE C TOR C UR R E NT (mA)
C ob , C APAC ITANC E (pF )
25 C
f = 1 MHz
lE = 0 V
TA = 25 C
10
8
6
4
2
0
0
5
10
20
30
45
15
25
35 40
V R , R E V E R S E B IAS V OLTAG E (V OLT S )
50
FIG.39 Output Capacitance
10 75 C
25 C
1
T A = -25 C
0.1
0.01
VO = 5 V
0.001
0
1
2
3
4
5
6
7
8
V in , INP UT V OLTAG E (V OLT S )
V in , INP UT V OLTAG E (V OLT S )
T A = -25 C
75 C
25 C
VO = 0.2 V
0.1
0
5
10
15
20
I C , C OLLE C TOR C UR R E NT (mA)
25
FIG.41 Input Voltage versus Output Current
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FIG.40 Output Current versus Input Voltage
10
1
9
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MUN5111DW Series
MUN5111DW Series
1
1000
VCE = 10 V
IC/IB = 10
hF E , DC C UR R E NT G AIN
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5132DW
75 C
0.1
-25 C
25 C
0.01
0.001
0
20
40
30
10
I C , C OLLE C TOR C UR R E NT (mA)
25 C
10
T A = -25 C
1
50
75 C
100
1
10
I C , C OLLE C TOR C UR R E NT (mA)
FIG.42 VCE(sat) versus I C
FIG.43 DC Current Gain
12
100
f = 1 MHz
lE = 0 V
TA = 25 C
10
I C , C OLLE C TOR C UR R E NT (mA)
C ob , C APAC ITANC E (pF )
100
8
6
4
2
0
0
5
10
20
30
15
25
35 40
V R , R E V E R S E B IAS V OLTAG E (V OLT S )
45
FIG.44 Output Capacitance
50
75 C
10
25 C
1
T A = -25 C
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
8
V in , INP UT V OLTAG E (V OLT S )
V in , INP UT V OLTAG E (V OLT S )
T A = -25 C
75 C
25 C
VO = 0.2 V
0.1
0
10
20
30
40
I C , C OLLE C TOR C UR R E NT (mA)
50
FIG.46 Input Voltage versus Output Current
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10
FIG.45 Output Current versus Input Voltage
10
1
9
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MUN5111DW Series
MUN5111DW Series
1
1000
VCE = 10 V
IC/IB = 10
hF E , DC C UR R E NT G AIN
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5133DW
75 C
0.1
-25 C
25 C
0.01
0.001
0
20
40
30
10
I C , C OLLE C TOR C UR R E NT (mA)
75 C
100
1
10
I C , C OLLE C TOR C UR R E NT (mA)
FIG47. VCE(sat) versus IC
100
FIG.48 DC Current Gain
8
100
6
I C , C OLLE C TOR C UR R E NT (mA)
f = 1 MHz
lE = 0 V
TA = 25 C
7
C ob , C APAC ITANC E (pF )
25 C
10
1
50
T A = -25 C
5
4
3
2
1
0
0
5
10
15
20
25
30
35 40
45
V R , R E V E R S E B IAS V OLTAG E (V OLT S )
FIG.49 Output Capacitance
50
75 C
10
25 C
1
0.1
T A = -25 C
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
8
V in , INP UT V OLTAG E (V OLT S )
V in, INP UT V OLTAG E (V OLT S )
T A = -25 C
1
25 C
VO = 0.2 V
0.1
0
10
20
30
40
I C , C OLLE C TOR C UR R E NT (mA)
50
FIG.51 Input Voltage versus Output Current
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http://www.weitron.com.tw
10
FIG.50 Output Current versus Input Voltage
10
75 C
9
WE IT R ON
MUN5111DW Series
MUN5111DW Series
1
1000
VCE = 10 V
IC/IB = 10
75 C
hF E , DC C UR R E NT G AIN
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5134DW
75 C
0.1
-25 C
25 C
0.01
0.001
0
20
40
30
10
I C , C OLLE C TOR C UR R E NT (mA)
100
1
10
I C , C OLLE C TOR C UR R E NT (mA)
FIG.52 VCE(sat) versus IC
100
FIG.53 DC Current Gain
3.5
100
2.5
I C , C OLLE C TOR C UR R E NT (mA)
f = 1 MHz
lE = 0 V
TA = 25 C
3
C ob , C APAC ITANC E (pF )
25 C
10
1
50
T A = -25 C
2
1.5
1
0.5
0
0
5
10
15
20
25
30
35 40
45
V R , R E V E R S E B IAS V OLTAG E (V OLT S )
FIG.54 Output Capacitance
50
75 C
10
25 C
1
0.1
T A = -25 C
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
8
V in, INP UT V OLTAG E (V OLT S )
V in, INP UT V OLTAG E (V OLT S )
10
T A = -25 C
75 C
25 C
VO = 0.2 V
0.1
0
40
10
20
30
I C , C OLLE C TOR C UR R E NT (mA)
50
FIG.56 Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
10
FIG.55 Output Current versus Input Voltage
100
1
9
WE IT R ON
MUN5111DW Series
MUN5111DW Series
1
1000
VCE = 10 V
IC/IB = 10
hF E , DC C UR R E NT G AIN
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5135DW
75 C
0.1
-25 C
25 C
0.01
0.001
0
20
40
30
10
I C , C OLLE C TOR C UR R E NT (mA)
75 C
100
1
10
I C , C OLLE C TOR C UR R E NT (mA)
FIG.57 VCE(sat) versus IC
f = 1 MHz
lE = 0 V
TA = 25 C
I C , C OLLE C TOR C UR R E NT (mA)
C ob , C APAC ITANC E (pF )
100
8
6
4
2
0
0
5
10
20
30
45
15
25
35 40
V R , R E V E R S E B IAS V OLTAG E (V OLT S )
FIG.59 Output Capacitance
50
75 C
10
25 C
1
T A = -25 C
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
5
6
7
8
V in , INP UT V OLTAG E (V OLT S )
V in , INP UT V OLTAG E (V OLT S )
T A = -25 C
75 C
25 C
VO = 0.2 V
0.1
0
10
20
30
40
I C , C OLLE C TOR C UR R E NT (mA)
50
FIG.61 Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
9
10
FIG.60 Output Current versus Input Voltage
10
1
100
FIG.58 DC Current Gain
12
10
25 C
10
1
50
T A = -25 C
WE IT R ON
MUN5111DW Series
MUN5111DW Series
1
0.1
-25 C
75 C
25 C
I C /I B = 10
0.01
0
1
2
3
4
5
I C , C OLLE C TOR C UR R E NT (mA)
6
7
hF E , DC C UR R E NT G AIN (NOR MALIZE D)
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5136DW
1000
75 C
T A = -25 C
100
10
V C E = 10 V
1
1
10
I C , C OLLE C TOR C UR R E NT (mA)
FIG.62 VCE(sat) versus IC
100
I C , C OLLE C TOR C UR R E NT (mA)
C ob , C APAC ITANC E (pF )
100
FIG.63 DC Current Gain
1.2
f = 1 MHz
IE = 0 V
T A = 25 C
1.0
0.8
0.6
0.4
0.2
0
25 C
0
10
20
30
40
50
V R , R E V E R S E B IAS V OLTAG E (V OLT S )
60
25 C
10
T A = -25 C
1
VVO == 55VV
0.1
0
1
2
3
4
V in , INP UT V OLTAG E (V OLT S )
T A = -25 C
10
75 C
0
2
V O = 0.2 V
4
6
8
10 12
14
16
I C , C OLLE C TOR C UR R E NT (mA)
18
20
FIG.66 Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
6
7
8
9
10
FIG.65 Output Current versus Input Voltage
100
1
5
V in , INP UT V OLTAG E (V OLT S )
FIG.64 Output Capacitance
25 C
75 C
WE IT R ON
MUN5111DW Series
MUN5111DW Series
1
T A = -25 C
75 C
0.1
25 C
0.01
I C /I B = 10
0
5
10 15
20
25 30
35
40
I C , C OLLE C TOR C UR R E NT (mA)
45
50
hF E , DC C UR R E NT G AIN (NOR MALIZE D)
V C E (s at) , C OLLE C TOR V OLTAG E (V OLT S )
TYPICAL ELECTRICAL CHARACTERISTICS-MUN5137DW
1000
75 C
T A = -25 C
100
25 C
V C E = 10 V
10
1
10
I C , C OLLE C TOR C UR R E NT (mA)
FIG.68 DC Current Gain
FIG.67 VCE(sat) versus IC
100
f = 1 MHz
IE = 0 V
T A = 25 C
I C , C OLLE C TOR C UR R E NT (mA)
C ob , C APAC ITANC E (pF )
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0
10
20
30
40
50
V R , R E V E R S E B IAS V OLTAG E (V OLT S )
60
75 C
T A = -25 C
10
25 C
1
0.1
0.01
0.001
VO = 5 V
0
1
2
3
4
V in, INP UT V OLTAG E (V OLT S )
V O = 0.2 V
T A = -25 C
75 C
25 C
0
5
10
15
20
I C , C OLLE C TOR C UR R E NT (mA)
25
FIG.71 Input Voltage versus Output Current
WEITRON
http://www.weitron.com.tw
6
7
8
9
10
11
FIG.70 Output Current versus Input Voltage
100
1
5
V in , INP UT V OLTAG E (V OLT S )
FIG. 69 Output Capacitance
10
100
MUN5111 Series
SOT-363 Package Outline Dimensions
Unit:mm
A
SOT-363
6
5
4
B C
1
2
D
3
E
H
K
J
WEITRON
http://www.weitron.com.tw
L
M
Dim
A
B
C
D
E
H
J
K
L
M
Min
Max
0.10
0.30
1.15
1.35
2.00
2.20
0.65 REF
0.30
0.40
1.80
2.20
0.10
0.80
1.10
0.25
0.40
0.10
0.25