NJ8N65 POWER MOSFET 8.0A 650V N-CHANNEL POWER MOSFET DESCRIPTION The NJ8N65 is a high voltage and high current power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged avalanche characteristics. This power MOSFET is usually used in high speed switching applications at power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. 1 FEATURES * VDS = 650V * ID = 8.0A * RDS(ON) = 1.4 ohm@VGS = 10 V * Ultra Low gate charge (typical 28nC) * Low reverse transfer capacitance (CRSS = typical 12.0 pF) * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness 1 TO-220 TO-220F SYMBOL ORDERING INFORMATION Ordering Number Package NJ8N65-LI NJ8N65-BL NJ8N65F-LI Note: Pin Assignment: G: Gate TO-220 TO-220 TO-220F D: Drain S: Source Pin Assignment 1 2 3 G D S G D S G D S Packing Tape Box Bulk Tube NJ8N65 POWER MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage VDSS 650 V Gate-Source Voltage VGSS ±30 V Avalanche Current (Note 2) IAR 8 A 8 A Continuous ID Drain Current Pulsed (Note 2) IDM 32 A 230 mJ Single Pulsed (Note 3) EAS Avalanche Energy Repetitive (Note 2) EAR 14.7 mJ Peak Diode Recovery dv/dt (Note 4) dv/dt 4.5 V/ns 147 W TO-220 Power Dissipation PD TO-220F 48 W Junction Temperature TJ +150 °C Operating Temperature TOPR -55 ~ +150 °C Storage Temperature TSTG -55 ~ +150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.ʳ Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Repetitive Rating : Pulse width limited by TJ 3. L = 7.1mH, IAS = 8A, VDD = 50V, RG = 25 ȍ, Starting TJ = 25°C 4. ISD 8A, di/dt 200A/ȝs, VDD BVDSS, Starting TJ = 25°C THERMAL DATA PARAMETER Junction to Ambient Junction to Case SYMBOL șJA TO-220 TO-220F șJC RATING 62.5 0.85 2.6 UNIT °C/W °C/W °C/W NJ8N65 POWER MOSFET ELECTRICAL CHARACTERISTICS (TC =25°C, unless otherwise specified) PARAMETER OFF CHARACTERISTICS Drain-Source Breakdown Voltage Drain-Source Leakage Current SYMBOL TEST CONDITIONS MIN TYP MAX UNIT VGS = 0 V, ID = 250 ȝA 650 V VDS = 650 V, VGS = 0 V 10 μA VGS = 30 V, VDS = 0 V 100 nA Forward Gate-Source Leakage Current IGSS Reverse VGS = -30 V, VDS = 0 V -100 nA Breakdown Voltage TemperatureʳCoefficient ϦBVDSS/ƸTJ ID =250ȝA,Referenced to 25°C 0.7 V/°C ON CHARACTERISTICS Gate Threshold Voltage VGS(TH) VDS = VGS, ID = 250 ȝA 2.0 4.0 V Static Drain-Source On-State Resistance RDS(ON) VGS = 10 V, ID = 4A 1.0 1.4 ȍ DYNAMIC CHARACTERISTICS 965 1255 pF Input Capacitance CISS VDS = 25 V, VGS = 0V, Output Capacitance COSS 105 135 pF f = 1MHz Reverse Transfer Capacitance CRSS 12 16 pF SWITCHING CHARACTERISTICS 16.5 45 ns Turn-On Delay Time tD(ON) VDD = 325V, ID =8A, Turn-On Rise Time tR 60.5 130 ns RG = 25ȍ Turn-Off Delay Time tD(OFF) 81 170 ns (Note 1, 2) Turn-Off Fall Time tF 64.5 140 ns 28 36 nC Total Gate Charge QG VDS= 520V,ID=8A, Gate-Source Charge QGS 4.5 nC VGS= 10 V (Note 1, 2) Gate-Drain Charge QGD 12 nC DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS Drain-Source Diode Forward Voltage VSD VGS = 0 V, IS =8A 1.4 V Maximum Continuous Drain-Source Diode IS 8 A Forward Current Maximum Pulsed Drain-Source Diode ISM 32 A Forward Current 365 ns Reverse Recovery Time tRR VGS = 0 V, IS =8A, dIF/dt = 100 A/μs (Note 2) Reverse Recovery Charge QRR 3.4 μC Notes: 1. Pulse Test: Pulse width 300ȝs, Duty cycle2% 2. Essentially independent of operating temperature BVDSS IDSS NJ8N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS D.U.T. + VDS - + - L RG Driver VGS Same Type as D.U.T. VDD * dv/dt controlled by RG * ISD controlled by pulse period * D.U.T.-Device Under Test Peak Diode Recovery dv/dt Test Circuit VGS (Driver) Period D= P.W. P. W. Period VGS= 10V IFM, Body Diode Forward Current ISD (D.U.T.) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (D.U.T.) VDD Body Diode Forward Voltage Drop Peak Diode Recovery dv/dt Waveforms NJ8N65 POWER MOSFET TEST CIRCUITS AND WAVEFORMS (Cont.) RL VDS VDS 90% VDD VGS RG D.U.T. 10V VGS 10% tD(ON) tD(OFF) tF tR Switching Test Circuit Switching Waveforms VGS QG 10V QGS QGD Charge Gate Charge Test Circuit Gate Charge Waveform BVDSS IAS ID(t) VDS(t) VDD tp Unclamped Inductive Switching Test Circuit Time Unclamped Inductive Switching Waveforms NJ8N65 POWER MOSFET TYPICAL CHARACTERISTICS On-State Characteristics Drain Current, ID (A) 100 Transfer Characteristics VGS Top: 15.0V 10.0V 8.0V 7.0V 6.5V 6.0V 5.5 V Bottorm:5.0V 10 10 1 Drain Current, ID (A) 5.0V 0.1 Notes: 1. 250μs Pulse Test 2. TC=25°C 0.1 25°C 1 Reverse Drain Current, IDR (A) Drain-Source On-Resistance, RDS(ON) (ohm) 4 3 VGS=20V 2 1 10 5 10 15 Drain Current, ID (A) 20 Ciss 1500 1300 1100 Coss 900 Crss 500 300 Notes: 100 1. VGS=0V 2. f = 1MHz 0 0.1 1 10 Drain-SourceVoltage, VDS (V) 1 Notes: 1. VGS=0V 2. 250μs Test 1.4 1.6 1.8 Gate Charge Characteristics 12 ID=7.5A Gate-Source Voltage, VGS (V) Ciss=Cgs+Cgd (Cds=shorted) Coss=Cds+Cgd Crss=Cgd 25°C Source-Drain Voltage, VSD (V) Capacitance Characteristics (Non-Repetitive) 1900 150°C 0.1 0.2 0.4 0.6 0.8 1.0 1.2 0 Capacitance (pF) 8 10 VGS=10V 700 6 Body Diode Forward Voltage vs. Source Current 5 1700 4 Gate-Source Voltage, VGS (V) TJ=25°C 0 Notes: 1. VDS=40V 2. 250μs Pulse Test 0.1 2 1 10 Drain-to-Source Voltage, VDS (V) On-Resistance Variation vs. Drain Current and Gate Voltage 6 150°C 10 VDS=520V 8 VDS=300V VDS=120V 6 4 2 0 0 5 10 15 20 25 Total Gate Charge, QG (nC) 30 NJ8N65 POWER MOSFET TYPICAL CHARACTERISTICS(Cont.) Breakdown Voltage Variation vs. Temperature 1.2 On-Resistance Junction Temperature Drain-Source On-Resistance, RDS(ON) (Normalized) Drain-Source Breakdown Voltage, BVDSS (Normalized) 1.1 1.0 0.9 Note: 1. VGS=0V 2. ID=250μA 0.8 -100 -50 0 50 100 150 200 3.0 2.5 2.0 1.5 1.0 Note: 1. VGS=10V 2. ID=4A 0.5 0.0 -100 Junction Temperature, TJ (°C) -50 0 50 100 150 200 Junction Temperature, TJ (°C) Maximum Drain Current vs. Case Temperature Maximum Safe Operating Area 100 10 Operation in This Area is Limited by RDS(on) 10μs Drain Current, ID (A) Drain Current, ID (A) 8 100μs 10 1ms DC 10ms 1 Notes: 1. TJ=25°C 2. TJ=150°C 0.1 3. Single Pulse 1 6 4 2 0 10 100 1000 Drain-Source Voltage, VDS (V) 25 50 75 100 125 150 Case Temperature, TC (°C) Transient Thermal Response Curve Thermal Response, șJC (t) 1 D=0.5 D=0.2 D=0.1 0.1 D=0.05 0.02 0.01 Notes: Single pulse 1. LJJC (t) = 0.85°C/W Max. 2. Duty Factor, D=t1/t2 3. TJM-TC=PDM×LJJC (t) 0.01 10-5 10-4 10-3 10-2 10-1 100 101 Square Wave Pulse Duration, t1 (sec)