BZD27C3V6P - BZD27C200P SURFACE MOUNT SILICON ZENER DIODES VOLTAGE RANGE: 3.6 - 200V POWER: 0.15Wa t t s Features ! ! ! ! ! Sillicon planar zener diodes. Low profile surface-mount package. Zener and surge current specification Low leakage current Excellent stability High temperature soldering guaranteed: B 265℃/10 seconds, at terminals C E SOD-123FL Dim Min Max Typ A 3.58 3.72 3.65 3 B 2.72 2.78 2.75 C 1.77 1.83 1.80 D 1 1.02 1.08 1.05 E 0.097 1.03 1.00 H 0.13 0.17 0.15 L 0.53 0.57 0.55 All Dimensions in mm Mechanical Data ! Case: SOD-123FL plastic body over passivated junction ! Terminals : Plated axial leads, ! solderable per MIL-STD-750, Method 2026 D H L ! Polarity : Color band denotes cathode end ! Mounting Position : Any E ! Weight:0.0007 ounce, 0.02 grams A Maximum Ratings @ TA = 25°C unless otherwise specified Symbol Value Unit PPPM 0.15 Watts Power dissipation at T A=25℃ (NOTE 2) Ptot 0.8 Watts Maximum instantaneous forward voltage at 0.2A VF 1.2 Volts Thermal resistance junction to ambient RθJA 180 K/W Operating temperature junction range TJ - 55 to +150 ℃ TSTG - 55 to +150 ℃ Characteristic Non-repetitive peak pulse power dissipation with a 10/1000µs waveform (NOTE 1) Storage temperature range NOTES:(1)TJ =25℃ prior to surge. (2)Mounted on epoxy-glass PCB with 3×3 mm Cu µ pads( ≥ 40m thick) (3)Non-repetitive peak reverse current in accordance with "IEC 60-1,Section 8" (10/1000 µs pulse) 1 of 3 www.sunmate.tw (NOTE 1) Differential resistance Temperature coefficient Vz@IzT rdif@Iz αz@Iz Test current IZT V Ω %/℃ mA Working voltage Type Reverse current at reverse voltage IR VR µA V min max typ max min max max BZD27C3V6P 3.4 3.8 4 8 -0.14 -0.04 100 100 1 BZD27C3V9P 3.7 4.1 4 8 -0.14 -0.04 100 50 1 BZD27C4V3P 4 4.6 4 7 -0.12 -0.02 100 25 1 BZD27C4V7P 4.4 5 3 7 -0.1 0 100 10 1 BZD27C5V1P 4.8 5.4 3 6 -0.08 0.02 100 5 1 BZD27C5V6P 5.2 6 2 4 -0.04 0.04 100 10 2 BZD27C6V2P 5.8 6.6 2 3 -0.01 0.06 100 5 2 BZD27C6V8P 6.4 7.2 1 3 0 0.07 100 10 3 BZD27C7V5P 7 7.9 1 2 0 0.07 100 50 3 BZD27C8V2P 7.7 8.7 1 2 0.03 0.08 100 10 3 BZD27C9V1P 8.5 9.6 2 4 0.03 0.08 50 10 5 BZD27C10P 9.4 10.6 2 4 0.05 0.09 50 7 7.5 BZD27C11P 10.4 11.6 4 7 0.05 0.1 50 4.0 8.2 BZD27C12P 11.4 12.7 4 7 0.05 0.1 50 3.0 9.1 BZD27C13P 12.4 14.1 5 10 0.05 0.1 50 2 10 BZD27C15P 13.8 15.6 5 10 0.05 0.1 50 1 11 BZD27C16P 15.3 17.1 6 15 0.06 0.11 25 1 12 BZD27C18P 16.8 19.1 6 15 0.06 0.11 25 1 13 BZD27C20P 18.8 21.2 6 15 0.06 0.11 25 1 15 BZD27C22P 20.8 23.3 6 15 0.06 0.11 25 1 16 BZD27C24P 22.8 25.6 7 15 0.06 0.11 25 1 18 BZD27C27P 25.1 28.9 7 15 0.06 0.11 25 1 20 BZD27C30P 28 32 8 15 0.06 0.11 25 1 22 BZD27C33P 31 35 8 15 0.06 0.11 25 1 24 BZD27C36P 34 38 21 40 0.06 0.11 10 1 27 BZD27C39P 37 41 21 40 0.06 0.11 10 1 30 BZD27C43P 40 46 24 45 0.07 0.12 10 1 33 BZD27C47P 44 50 24 45 0.07 0.12 10 1 36 BZD27C51P 48 54 25 60 0.07 0.12 10 1 39 BZD27C56P 52 60 25 60 0.07 0.12 10 1 43 BZD27C62P 58 66 25 80 0.08 0.13 10 1 47 BZD27C68P 64 72 25 80 0.08 0.13 10 1 51 BZD27C75P 70 79 30 100 0.08 0.13 10 1 56 BZD27C82P 77 87 30 100 0.08 0.13 10 1 62 BZD27C91P 85 96 60 200 0.08 0.13 5 1 68 BZD27C100P 94 106 60 200 0.09 0.13 5 1 75 BZD27C110P 104 116 80 250 0.09 0.13 5 1 82 BZD27C120P 114 127 80 250 0.09 0.13 5 1 91 BZD27C130P 124 141 110 300 0.09 0.13 5 1 100 BZD27C150P 138 156 130 300 0.09 0.13 5 1 110 BZD27C160P 153 171 150 350 0.09 0.13 5 1 120 BZD27C180P 168 191 180 400 0.09 0.13 5 1 130 BZD27C200P 188 212 200 500 0.09 0.13 5 1 150 Note:1.Pulse test:tp≤5ms. 2 of 3 www.sunmate.tw Figure 2. Maximum Pulse Power Dissipation vs. Zener Voltage Figure 1. Forward Current vs. Forward Voltage 10.00 160 Typ. VF PRSM–Max. Pulse Power Dissipation ( W ) I F – Forward Current ( A ) 140 Max. VF 1.00 0.10 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 120 100 80 60 40 20 0 0 25 VF – Forward Voltage ( V ) 75 100 125 150 175 200 V Znom – Zener Voltage ( V ) Figure 3. Typ. Diode Capacitance vs. Reverse Voltage Figure 4. Non-Repetitive Peak Reverse Current Pulse Definition 10000 C5V1P C6V8P C12P IRSM (%) 100 90 C18P 1000 t1 = 10 µs t2 = 1000 µ s 50 100 C27P C51P 10 C200P 10 0.0 0.5 1.0 1.5 2.0 2.5 VR – Reverse Voltage (V) t t1 3.0 t2 Figure 5. Power Dissipation vs. Ambient Temperature 3.0 Ptot –Power Dissipation ( W ) C D – Typ. Junction Capacitance ( pF ) 50 tie point temperature 2.5 2.0 1.5 ambient temperature 1.0 0.5 0.0 0 25 50 75 100 125 150 Tamb – Ambient Temperature ( qC ) 3 of 3 www.sunmate.tw