AP6679GS/P-A-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Lower On-resistance
D
▼ Simple Drive Requirement
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
-40V
RDS(ON)
13.5mΩ
ID
G
-65A
S
Description
Advanced Power MOSFETs from APEC provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
GD
S
TO-263(S)
The TO-263 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications
such as DC/DC converters. The through-hole version (AP6679GP-A)
are available for low-profile applications.
G
Absolute Maximum Ratings
Parameter
Symbol
D
TO-220(P)
S
Rating
Units
VDS
Drain-Source Voltage
-40
V
VGS
Gate-Source Voltage
+25
V
ID@TC=25℃
Continuous Drain Current, VGS @ 10V
-65
A
ID@TC=100℃
Continuous Drain Current, VGS @ 10V
-41
A
-260
A
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
89
W
Linear Derating Factor
0.71
W/℃
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Value
Unit
Rthj-c
Maximum Thermal Resistance, Junction-case
1.4
℃/W
Rthj-a
Maximum Thermal Resistance, Junction-ambient
62
℃/W
Data and specifications subject to change without notice
1
201011182
AP6679GS/P-A-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
-40
-
-
V
-
-0.02
-
V/℃
VGS=-10V, ID=-28A
-
-
13.5
mΩ
VGS=-4.5V, ID=-20A
-
-
20
mΩ
-0.8
-
-2.5
V
BVDSS
Drain-Source Breakdown Voltage
ΔBVDSS/ΔTj
Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=-1mA
RDS(ON)
Static Drain-Source On-Resistance
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
gfs
Forward Transconductance
VDS=-10V, ID=-24A
-
24
-
S
IDSS
Drain-Source Leakage Current
VDS=-40V, VGS=0V
-
-
-1
uA
Drain-Source Leakage Current (T j=125 C) VDS=-32V, VGS=0V
-
-
-250
uA
Gate-Source Leakage
VGS= +25V, VDS=0V
-
-
+100
nA
ID=-16A
-
43
70
nC
o
IGSS
2
Qg
Total Gate Charge
Qgs
Gate-Source Charge
VDS=-32V
-
7
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
26
-
nC
VDS=-20V
-
11
-
ns
2
td(on)
Turn-on Delay Time
tr
Rise Time
ID=-16A
-
40
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω,VGS=-10V
-
50
-
ns
tf
Fall Time
RD=0.8Ω
-
80
-
ns
Ciss
Input Capacitance
VGS=0V
-
2870 4590
pF
Coss
Output Capacitance
VDS=-25V
-
960
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
740
-
pF
Rg
Gate Resistance
f=1.0MHz
-
2.5
3.75
Ω
Min.
Typ.
Max. Units
IS=-20A, VGS=0V
-
-
-1.2
V
Source-Drain Diode
Symbol
VSD
Parameter
2
Forward On Voltage
2
Test Conditions
trr
Reverse Recovery Time
IS=-16A, VGS=0V,
-
37
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
42
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP6679GS/P-A-HF
120
200
-10V
-7.0V
o
T C =25 C
-10V
-7.0V
-5.0V
-4.5V
T C =150 o C
-ID , Drain Current (A)
-ID , Drain Current (A)
160
-5.0V
-4.5V
120
80
60
V G = -3.0V
30
V G = -3.0V
40
90
0
0
0
2
4
6
8
10
12
0.0
-V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
4.0
6.0
8.0
10.0
Fig 2. Typical Output Characteristics
20
1.8
I D = -20A
T C =25 ℃
I D = -28A
V G = -10V
1.6
Normalized RDS(ON)
18
RDS(ON) (mΩ )
2.0
-V DS , Drain-to-Source Voltage (V)
16
14
1.4
1.2
1.0
12
0.8
10
0.6
2
4
6
8
10
-50
Fig 3. On-Resistance v.s. Gate Voltage
40
1.3
-VGS(th) (V)
1.5
30
-IS(A)
50
100
150
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
50
T j =150 o C
0
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
T j =25 o C
1.1
20
0.9
10
0.7
0
0.5
0
0.2
0.4
0.6
0.8
1
1.2
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
T j , Junction Temperature (
o
150
C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP6679GS/P-A-HF
12
f=1.0MHz
10000
-VGS , Gate to Source Voltage (V)
10
I D = -16A
V DS = -32V
C iss
C (pF)
8
6
C oss
C rss
1000
4
2
100
0
0
20
40
60
80
1
100
5
9
Q G , Total Gate Charge (nC)
13
17
21
25
29
-V DS , Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1000
Normalized Thermal Response (Rthjc)
1
100
-ID (A)
1ms
10ms
10
100ms
1s
T C =25 o C
Single Pulse
DC
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
1
0.1
1
10
100
0.00001
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
80
V DS = -5V
VG
-ID , Drain Current (A)
T j =25 o C
T j =150 o C
60
QG
-4.5V
QGS
40
QGD
20
Charge
Q
0
0
2
4
6
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
Fig 12. Gate Charge Waveform
4