DMN2990UFA 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary NEW PRODUCT V(BR)DSS RDS(ON) max ID max TA = +25°C Low Package Profile, 0.4mm Maximum Package height 0.48mm package footprint, 16 times smaller than SOT23 0.99Ω @ VGS = 4.5V 510mA Low On-Resistance 470mA Very low Gate Threshold Voltage, 1.0V max 1.8Ω @ VGS = 1.8V 380mA ESD Protected Gate 2.4Ω @ VGS = 1.5V 330mA Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 standards for High Reliability 1.2Ω @ VGS = 2.5V 20V Features and Benefits Description This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 2 Mechanical Data Case: X2-DFN0806-3 Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (approximate) General Purpose Interfacing Switch Power Management Functions Analog Switch Drain Body Diode Gate S D G Top View Package Pin Configuration ESD PROTECTED Bottom View Gate Protection Diode Source Equivalent Circuit Ordering Information (Note 4) Part Number DMN2990UFA-7B Notes: Case X2-DFN0806-3 Packaging 10K/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information DMN2990UFA-7B NW NW = Product Type Marking Code Top View Bar Denotes Gate and Source Side DMN2990UFA Document number: DS35765 Rev. 3 - 2 1 of 6 www.diodes.com June 2013 © Diodes Incorporated DMN2990UFA Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Drain-Source Voltage NEW PRODUCT Continuous Drain Current (Note 5) VGS = 1.8V Value 20 Units V VGSS ±8 V Steady State TA = +25°C TA = +70°C ID 510 410 mA t<10s TA = +25°C TA = +70°C ID 610 490 mA Steady State TA = +25°C TA = 70°C ID 380 300 mA t<10s TA = +25°C TA = +70°C ID 450 360 mA IDM 800 mA Value 400 310 220 -55 to +150 Units mW °C/W °C/W °C Gate-Source Voltage Continuous Drain Current (Note 5) VGS = 4.5V VDSS Pulsed Drain Current (Note 6) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol Total Power Dissipation (Note 5) Steady state Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) PD RJA Operating and Storage Temperature Range TJ, TSTG Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance @TC = +25°C Symbol Min Typ BVDSS 20 — — — 50 IGSS — — ±100 nA VGS(th) 0.4 — — 1.0 V 0.60 0.99 — 0.75 1.2 — 0.90 1.8 — 1.2 2.4 — — — mS VDS = 10V, ID = 400mA VGS = 0V, IS = 150mA IDSS RDS(ON) Max Unit — — V — 100 nA VDS = 5V, VGS = 0V VGS = ±5V, VDS = 0V VDS = VGS, ID = 250μA VGS = 2.5V, ID = 50mA Ω VGS = 1.8V, ID = 20mA VGS = 1.5V, ID = 10mA Forward Transfer Admittance |Yfs| 180 Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance VSD - 0.6 1.0 V Ciss 55.2 pF Coss — — 27.6 Output Capacitance 4.0 8.0 pF Reverse Transfer Capacitance Crss — 2.8 Total Gate Charge Qg — 0.5 5.6 — nC Gate-Source Charge Qgs — 0.07 — nC VGS = 1.2V, ID = 1mA pF Gate-Drain Charge Qgd — 0.07 — nC Turn-On Delay Time tD(on) — 4.0 — ns Turn-On Rise Time tr — 3.3 — ns Turn-Off Delay Time tD(off) — 19.0 — ns tf — 6.4 — ns Notes: VGS = 0V, ID = 250μA VDS = 16V, VGS = 0V VGS = 4.5V, ID = 100mA 2.0 — Turn-Off Fall Time Test Condition VDS = 16V, VGS = 0V, f = 1.0MHz VGS = 4.5V, VDS = 10V, ID = 250mA VDD = 10V, VGS = 4.5V, RL = 47Ω, RG = 10Ω, ID = 200mA 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN2990UFA Document number: DS35765 Rev. 3 - 2 2 of 6 www.diodes.com June 2013 © Diodes Incorporated DMN2990UFA 0.8 0.8 VDS = 5.0V ID(A) @ VGS = 4.5V Ave VGS(V) @ -55°C ID, DRAIN CURRENT(A) ID, DRAIN CURRENT (A) ID(A) @ VGS = 2.5V ID(A) @ VGS = 2.0V 0.4 ID(A) @ VGS = 1.5V 0.2 0.6 Ave VGS(V) @ 125°C 0.2 4 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 1.2 RDS(ON) Ave @ VGS = 1.8V 1 0.8 0.6 R DS(ON) Ave @ VGS = 4.5V 0.2 0 0.2 0.4 0.6 ID, DRAIN-SOURCE CURRENT Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0 0.8 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics 3 1.2 VGS = 4.5V 1 Ave RDS(ON) (R) @ 150°C 0.8 Ave RDS(ON) (R) @ 125°C 0.6 Ave RDS(ON) (R) @ 85°C Ave RDS(ON) (R) @ 25°C 0.4 Ave RDS(ON) (R) @ -55°C 0.2 0 0 0.4 0.6 0.8 1 ID DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 0.2 1.2 1.6 RDS(ON) Ave @ VGS = 4.5V, ID = 300mA 1.4 1.2 RDS(ON) Ave @ VGS = 2.5V, ID = 150mA 1 0.8 0.6 -50 -25 0 25 50 75 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 0.5 1 1.5 2 2.5 3 3.5 VDS, DRAIN-SOURCE VOLTAGE (A) Fig. 1 Typical Output Characteristics 0.4 Ave VGS(V) @ 150°C 0.4 ID(A) @ VGS = 1.2V 0.0 0 Ave VGS(V) @ 85°C Ave VGS(V) @ 25°C ID(A) @ VGS =4.0V 0.6 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Normalized) NEW PRODUCT ID(A) @ VGS = 3.0V 100 125 150 TJ, JUNCTION TEMPERATURE(C) Fig. 5 On-Resistance Variation with Temperature DMN2990UFA Document number: DS35765 Rev. 3 - 2 3 of 6 www.diodes.com 1 RDS(ON) @ VGS = 4.5V, ID = 300mA 0.8 0.6 RDS(ON) @ VGS = 2.5V, ID = 150mA 0.4 0.2 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE(C) Fig. 6 On-Resistance Variation with Temperature June 2013 © Diodes Incorporated DMN2990UFA 1 IS, SOURCE CURRENT (A) VGS(TH), GATE THRESHOLD VOLTAGE (V) 1 VSD (V) @ VGS = 0V, TA= 25°C VTH (V) @ ID = 1mA 0.8 VTH (V) @ ID = 250µA 0.6 0.4 0.8 0.6 0.4 0.2 0.2 0 -50 0 -25 0 25 50 75 100 125 0 150 TJ, JUNCTION TEMPERATURE(C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 50 0.2 0.4 0.6 0.8 1 VSD, SOURCE- DRAIN VOLTAGE (V) Fig. 8 Diodes Forward Voltage vs. Current 1.2 1000 f = 1MHz IDSS(nA) Ave @ 150°C 40 IDSS, LEAKAGE CURRENT (nA) CT, JUNCTION CAPACITANCE (pF) NEW PRODUCT 1.2 Ciss Ave (pF) 30 20 Crss Ave (pF) 10 Coss Ave (pF) 100 0 IDSS(nA) Ave @ 125°C IDSS(nA) Ave @ 25°C 1 0 5 10 15 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Junction Capacitance IDSS(nA) Ave @ 85°C 10 2 4 6 8 10 12 14 16 18 20 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Drain-Source Leakage Current vs. Voltage 8 6 4 2 VDS = 10V 0 0 0.2 0.4 0.6 0.8 QG - (nC) Fig. 11 Gate Charge Characteristics DMN2990UFA Document number: DS35765 Rev. 3 - 2 1 4 of 6 www.diodes.com June 2013 © Diodes Incorporated DMN2990UFA Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. NEW PRODUCT A3 A1 A X2-DFN0806-3 Dim Min Max Typ A 0.375 0.40 0.39 A1 0 0.05 0.02 A3 0.10 b 0.10 0.20 0.15 D 0.55 0.65 0.60 D1 0.35 0.45 0.40 E 0.75 0.85 0.80 E1 0.20 0.30 0.25 e 0.35 K 0.20 L 0.20 0.30 0.25 All Dimensions in mm Seating Plane D e L (2x) b (2x) K E E1 Pin#1 R0.075 D1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X1 Y1 Dimensions C X X1 X2 Y Y1 Y2 Y2 X (2x) Y (2x) Value (in mm) 0.350 0.200 0.450 0.550 0.375 0.475 1.000 C X2 DMN2990UFA Document number: DS35765 Rev. 3 - 2 5 of 6 www.diodes.com June 2013 © Diodes Incorporated DMN2990UFA IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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