IRF IRHNJ67230 Simple drive requirement Datasheet

PD-96923C
IRHNJ67230
JANSR2N7591U3
200V, N-CHANNEL
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
REF: MIL-PRF-19500/746
TECHNOLOGY
Product Summary
Part Number Radiation Level
IRHNJ67230 100K Rads (Si)
IRHNJ63230 300K Rads (Si)
RDS(on)
0.13Ω
0.13Ω
ID
16A
16A
QPL Part Number
JANSR2N7591U3
JANSF2N7591U3
SMD-0.5
International Rectifier’s R6 TM technology provides
superior power MOSFETs for space applications.
These devices have improved immunity to Single
Event Effect (SEE) and have been characterized for
useful performance with Linear Energy Transfer
(LET) up to 90MeV/(mg/cm2). Their combination of
very low RDS(on) and faster switching times reduces
power loss and increases power density in today’s
high speed switching applications such as DC-DC
converters and motor controllers. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, ease of paralleling
and temperature stability of electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
n
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Pre-Irradiation
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Units
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy Á
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt Â
Operating Junction
Storage Temperature Range
19
12
76
75
0.6
±20
60
19
7.5
8.6
-55 to 150
Pckg. Mounting Surface Temp.
Weight
300 (for 5s)
1.0 (Typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
For footnotes refer to the last page
www.irf.com
1
11/22/10
IRHNJ67230, JANSR2N7591U3
Pre-Irradiation
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
200
—
—
V
—
0.22
—
V/°C
—
—
0.13
Ω
∆BV DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
2.0
—
10
—
—
Typ Max Units
—
4.0
-10.25 —
—
—
—
10
—
25
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.0
100
-100
42
15
15
18
32
41
10
—
Ciss
Coss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
1450
210
3.8
—
—
—
Rg
Gate Resistance
V
mV/°C
S
VGS = 12V, ID = 10A Ã
VDS = VGS, ID = 1.0mA
nC
VDS = 15V, IDS = 10A Ã
VDS= 160V ,VGS=0V
VDS = 160V,
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 16A
VDS = 100V
ns
VDD = 100V, ID = 16A,
VGS = 12V, RG = 7.5Ω
µA
nA
nH
pF
Ω
0.9
Test Conditions
VGS = 0V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
Measured from the center of
drain pad to center of source pad
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
ISM
VSD
trr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
16
64
1.2
346
3.5
Test Conditions
A
V
ns
µC
Tj = 25°C, IS = 16A, VGS = 0V Ã
Tj = 25°C, IF = 16A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
* Current is limited by package
Thermal Resistance
Parameter
RthJC
Junction-to-Case
Min Typ Max
—
—
1.67
Units
Test Conditions
°C/W
Note: Corresponding Spice and Saber models are available on International Rectifier Web site.
For footnotes refer to the last page
2
www.irf.com
Radiation Characteristics
Pre-Irradiation
IRHNJ67230, JANSR2N7591U3
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Units
Test Conditions
V
µA
VGS = 0V, ID = 1.0mA
VGS = VDS, ID = 1.0mA
VGS = 20V
VGS = -20V
VDS= 160V, VGS = 0V
0.134
Ω
VGS = 12V, ID = 10A
—
0.130
Ω
VGS = 12V, ID = 10A
—
1.2
V
VGS = 0V, ID = 16A
Up to 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-3)
Static Drain-to-Source On-State „
Resistance (SMD-0.5)
Diode Forward Voltage
„
Min
Max
200
2.0
—
—
—
—
4.0
100
-100
10
—
nA
1. Part numbers IRHNJ67230 (JANSR2N7591U3) and IRHNJ63230 (JANSF2N7591U3)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area
LET
2
(MeV/(mg/cm ))
Energy
Range
(MeV)
(µm)
VDS (V)
@VGS=
@VGS=
@VGS=
@VGS=
0V
-5V
-10V
-15V
42 ± 5%
2450 ± 5%
205 ± 5%
200
200
200
190
61 ± 5%
825 ± 5%
66 ± 7.5%
200
200
200
190
90 ± 5%
1470 ± 5%
80 ± 5%
170
170
-
-
Bias VDS (V)
250
200
LET=42 ± 5%
150
LET=61 ± 5%
100
LET=90 ± 5%
50
0
0
-5
-10
-15
Bias VGS (V)
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
www.irf.com
3
IRHNJ67230, JANSR2N7591U3
Pre-Irradiation
100
VGS
TOP
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
10
1
5.0V
60µs PULSE WIDTH
Tj = 25°C
10
5.0V
1
60µs PULSE WIDTH
Tj = 150°C
0.1
0.1
0.1
1
10
0.1
100
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
100
T J = 25°C
10
1
0.1
VDS = 50V
15
60µs PULSE
WIDTH
0.01
RDS(on) , Drain-to-Source On Resistance
(Normalized)
3.0
T J = 150°C
ID, Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
ID = 16A
2.5
2.0
1.5
1.0
0.5
VGS = 12V
0.0
5
6
7
8
9
10
11
12
13
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
4
VGS
15V
12V
10V
9.0V
8.0V
7.0V
6.0V
BOTTOM 5.0V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
-60 -40 -20
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
www.irf.com
IRHNJ67230, JANSR2N7591U3
0.8
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance ( Ω)
Pre-Irradiation
ID = 16A
0.7
0.6
0.5
T J = 150°C
0.4
0.3
T J = 25°C
0.2
0.1
0
4
8
12
16
20
0.8
0.7
T J = 150°C
0.6
0.5
0.4
T J = 25°C
0.3
0.2
0.1
VGS = 12V
0
24
0
10
20
VGS, Gate -to -Source Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
40
50
60
70
Fig 6. Typical On-Resistance Vs
Drain Current
250
6.0
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
30
ID, Drain Current (A)
240
230
220
210
200
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
ID = 50µA
ID = 250µA
ID = 1.0mA
ID = 150mA
1.0
190
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
www.irf.com
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
5
IRHNJ67230, JANSR2N7591U3
2800
20
VGS = 0V,
f = 1 MHz
100KHz
C iss = C gs + C gd, C ds SHORTED
C rss = C gd
C oss = C ds + C gd
2000
Ciss
1600
1200
Coss
800
Crss
400
0
16
12
8
4
FOR TEST CIRCUIT
SEE FIGURE 13
0
1
10
100
0
VDS, Drain-to-Source Voltage (V)
10
20
30
40
50
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
100
16
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
VDS = 160V
VDS = 100V
VDS = 40V
ID = 16A
VGS, Gate-to-Source Voltage (V)
2400
C, Capacitance (pF)
Pre-Irradiation
T J = 150°C
10
T J = 25°C
12
8
4
VGS = 0V
1.0
0
0.4
0.6
0.8
1.0
VSD , Source-to-Drain Voltage (V)
Fig 11. Typical Source-Drain Diode
Forward Voltage
6
1.2
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 12. Maximum Drain Current Vs.
Case Temperature
www.irf.com
Pre-Irradiation
IRHNJ67230, JANSR2N7591U3
100
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
100µs
1ms
1
10ms
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
0.01
DC
ID
7.2A
10A
BOTTOM 16A
TOP
80
60
40
20
0
1
10
100
1000
25
VDS , Drain-to-Source Voltage (V)
50
75
100
125
150
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response (Z thJC )
10
1 D = 0.50
0.20
0.10
0.1
PDM
0.05
0.02
0.01
t1
SINGLE PULSE
(THERMAL RESPONSE)
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Case
www.irf.com
7
IRHNJ67230, JANSR2N7591U3
Pre-Irradiation
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
IAS
VGS
20V
0.01Ω
tp
+
- VDD
.
A
I AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
12V
50KΩ
.2µF
12V
QGS
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
Fig 17b. Gate Charge Test Circuit
RD
VDS
90%
VGS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
8
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
www.irf.com
Pre-Irradiation
IRHNJ67230, JANSR2N7591U3
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L = 0.47mH
Peak IL = 16A, VGS = 12V
 ISD ≤ 16A, di/dt ≤ 570A/µs,
VDD ≤ 200V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
12 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A.
Å Total Dose Irradiation with VDS Bias.
160 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A.
Case Outline and Dimensions — SMD-0.5
PAD ASSIGNMENTS
1 = DRAIN
2 = GATE
3 = SOURCE
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 11/2010
www.irf.com
9