PRELIMINARY
MX29LV800T/B
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE
3V ONLY FLASH MEMORY
FEATURES
• Extended single - supply voltage range 2.7V to 3.6V
• 1,048,576 x 8/524,288 x 16 switchable
• Single power supply operation
- 3.0V only operation for read, erase and program
operation
• Fast access time: 70/90ns
• Low power consumption
- 20mA maximum active current
- 0.2uA typical standby current
• Command register architecture
- Byte/word Programming (9us/11us typical)
- Sector Erase (Sector structure 16K-Bytex1,
8K-Bytex2, 32K-Bytex1, and 64K-Byte x15)
• Auto Erase (chip & sector) and Auto Program
- Automatically erase any combination of sectors with
Erase Suspend capability.
- Automatically program and verify data at specified
address
• Erase suspend/Erase Resume
- Suspends sector erase operation to read data from,
or program data to, any sector that is not being erased,
then resumes the erase.
• Status Reply
- Data polling & Toggle bit for detection of program and
erase operation completion.
• Ready/Busy pin (RY/BY)
- Provides a hardware method of detecting program or
erase operation completion.
• Sector protection
- Hardware method to disable any combination of
sectors from program or erase operations
- Tempoary sector unprotect allows code changes in
previously locked sectors.
• 100,000 minimum erase/program cycles
• Latch-up protected to 100mA from -1V to VCC+1V
• Boot Sector Architecture
- T = Top Boot Sector
- B = Bottom Boot Sector
• Low VCC write inhibit is equal to or less than 2.3V
• Package type:
- 44-pin SOP
- 48-pin TSOP
- 48-pin CSP
• Compatibility with JEDEC standard
- Pinout and software compatible with single-power
supply Flash
GENERAL DESCRIPTION
The MX29LV800T/B is a 8-mega bit Flash memory organized as 1M bytes of 8 bits or 512K words of 16 bits.
MXIC's Flash memories offer the most cost-effective
and reliable read/write non-volatile random access
memory. The MX29LV800T/B is packaged in 44-pin
SOP, 48-pin TSOP, and 48-ball CSP. It is designed to be
reprogrammed and erased in system or in standard
EPROM programmers.
TTL level control inputs and fixed power supply levels
during erase and programming, while maintaining maximum EPROM compatibility.
MXIC Flash technology reliably stores memory contents
even after 100,000 erase and program cycles. The MXIC
cell is designed to optimize the erase and programming
mechanisms. In addition, the combination of advanced
tunnel oxide processing and low internal electric fields
for erase and program operations produces reliable cycling. The MX29LV800T/B uses a 2.7V~3.6V VCC supply to perform the High Reliability Erase and auto Program/Erase algorithms.
The standard MX29LV800T/B offers access time as fast
as 70ns, allowing operation of high-speed microprocessors without wait states. To eliminate bus contention,
the MX29LV800T/B has separate chip enable (CE) and
output enable (OE) controls.
The highest degree of latch-up protection is achieved
with MXIC's proprietary non-epi process. Latch-up protection is proved for stresses up to 100 milliamps on
address and data pin from -1V to VCC + 1V.
MXIC's Flash memories augment EPROM functionality
with in-circuit electrical erasure and programming. The
MX29LV800T/B uses a command register to manage
this functionality. The command register allows for 100%
P/N:PM0709
REV. 1.3, JAN. 24, 2002
1
MX29LV800T/B
PIN CONFIGURATIONS
PIN DESCRIPTION
44 SOP(500 mil)
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
MX29LV800T/B
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
A0
CE
GND
OE
Q0
Q8
Q1
Q9
Q2
Q10
Q3
Q11
RESET
WE
A8
A9
A10
A11
A12
A13
A14
A15
A16
BYTE
GND
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
SYMBOL
PIN NAME
A0~A18
Address Input
Q0~Q14
Data Input/Output
Q15/A-1
Q15(Word mode)/LSB addr(Byte mode)
CE
Chip Enable Input
WE
Write Enable Input
BYTE
Word/Byte Selction input
RESET
Hardware Reset Pin
OE
Output Enable Input
RY/BY
Ready/Busy Output
VCC
Power Supply Pin (2.7V~3.6V)
GND
Ground Pin
48 TSOP (Standard Type) (12mm x 20mm)
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A15
A14
A13
A12
A11
A10
A9
A8
NC
NC
WE
RESET
NC
NC
RY/BY
A18
A17
A7
A6
A5
A4
A3
A2
A1
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
MX29LV800T/B
A16
BYTE
GND
Q15/A-1
Q7
Q14
Q6
Q13
Q5
Q12
Q4
VCC
Q11
Q3
Q10
Q2
Q9
Q1
Q8
Q0
OE
GND
CE
A0
48-Ball CSP Ball Pitch = 0.8 mm, Top View, Balls Facing Down
(8mm x 9mm x 1.2mm for MX29LV800T/BXB and 6mm x 8mm x 1.3mm for MX29LV800T/BXE)
A
B
C
D
E
F
G
H
6
A13
A12
A14
A15
A16
BYTE
Q15/A-1 GND
5
A9
A8
A10
A11
Q7
Q14
Q13
Q6
4
WE
RESET
NC
NC
Q5
Q12
Vcc
Q4
3
RY/BY
NC
A18
NC
Q2
Q10
Q11
Q3
2
A7
A17
A6
A5
Q0
Q8
Q9
Q1
1
A3
A4
A2
A1
A0
CE
OE
GND
P/N:PM0709
REV. 1.3, JAN. 24, 2002
2
MX29LV800T/B
BLOCK STRUCTURE
Table 1: MX29LV800T SECTOR ARCHITECTURE
Sector
Sector Size
Byte Mode Word Mode
Address range
Byte Mode (x8)
Word Mode (x16)
Sector Address
A18 A17 A16 A15 A14 A13 A12
SA0
64Kbytes
32Kwords
00000h-0FFFFh
00000h-07FFFh
0
0
0
0
X
X
X
SA1
64Kbytes
32Kwords
10000h-1FFFFh
08000h-0FFFFh
0
0
0
1
X
X
X
SA2
64Kbytes
32Kwords
20000h-2FFFFh
10000h-17FFFh
0
0
1
0
X
X
X
SA3
64Kbytes
32Kwords
30000h-3FFFFh
18000h-1FFFFh
0
0
1
1
X
X
X
SA4
64Kbytes
32Kwords
40000h-4FFFFh
20000h-27FFFh
0
1
0
0
X
X
X
SA5
64Kbytes
32Kwords
50000h-5FFFFh
28000h-2FFFFh
0
1
0
1
X
X
X
SA6
64Kbytes
32Kwords
60000h-6FFFFh
30000h-37FFFh
0
1
1
0
X
X
X
SA7
64Kbytes
32Kwords
70000h-7FFFFh
38000h-3FFFFh
0
1
1
1
X
X
X
SA8
64Kbytes
32Kwords
80000h-8FFFFh
40000h-47FFFh
1
0
0
0
X
X
X
SA9
64Kbytes
32Kwords
90000h-9FFFFh
48000h-4FFFFh
1
0
0
1
X
X
X
SA10
64Kbytes
32Kwords
A0000h-AFFFFh
50000h-57FFFh
1
0
1
0
X
X
X
SA11
64Kbytes
32Kwords
B0000h-BFFFFh
58000h-5FFFFh
1
0
1
1
X
X
X
SA12
64Kbytes
32Kwords
C0000h-CFFFFh
60000h-67FFFh
1
1
0
0
X
X
X
SA13
64Kbytes
32Kwords
D0000h-DFFFFh
68000h-6FFFFh
1
1
0
1
X
X
X
SA14
64Kbytes
32Kwords
E0000h-EFFFFh
70000h-77FFFh
1
1
1
0
X
X
X
SA15
32Kbytes
16Kwords
F0000h-F7FFFh
78000h-7BFFFh
1
1
1
1
0
X
X
SA16
8Kbytes
4Kwords
F8000h-F9FFFh
7C000h-7CFFFh
1
1
1
1
1
0
0
SA17
8Kbytes
4Kwords
FA000h-FBFFFh
7D000h-7DFFFh
1
1
1
1
1
0
1
SA18
16Kbytes
8Kwords
FC000h-FFFFFh
7E000h-7FFFFh
1
1
1
1
1
1
X
Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
3
MX29LV800T/B
Table 2: MX29LV800B SECTOR ARCHITECTURE
Sector
Sector Size
Byte Mode Word Mode
Address range
Byte Mode (x8)
Word Mode (x16)
Sector Address
A18 A17 A16 A15 A14 A13 A12
SA0
16Kbytes
8Kwords
00000h-03FFFh
00000h-01FFFh
0
0
0
0
0
0
X
SA1
8Kbytes
4Kwords
04000h-05FFFh
02000h-02FFFh
0
0
0
0
0
1
0
SA2
8Kbytes
4Kwords
06000h-07FFFh
03000h-03FFFh
0
0
0
0
0
1
1
SA3
32Kbytes
16Kwords
08000h-0FFFFh
04000h-07FFFh
0
0
0
0
1
X
X
SA4
64Kbytes
32Kwords
10000h-1FFFFh
08000h-0FFFFh
0
0
0
1
X
X
X
SA5
64Kbytes
32Kwords
20000h-2FFFFh
10000h-17FFFh
0
0
1
0
X
X
X
SA6
64Kbytes
32Kwords
30000h-3FFFFh
18000h-1FFFFh
0
0
1
1
X
X
X
SA7
64Kbytes
32Kwords
40000h-4FFFFh
20000h-27FFFh
0
1
0
0
X
X
X
SA8
64Kbytes
32Kwords
50000h-5FFFFh
28000h-2FFFFh
0
1
0
1
X
X
X
SA9
64Kbytes
32Kwords
60000h-6FFFFh
30000h-37FFFh
0
1
1
0
X
X
X
SA10
64Kbytes
32Kwords
70000h-7FFFFh
38000h-3FFFFh
0
1
1
1
X
X
X
SA11
64Kbytes
32Kwords
80000h-8FFFFh
40000h-47FFFh
1
0
0
0
X
X
X
SA12
64Kbytes
32Kwords
90000h-9FFFFh
48000h-4FFFFh
1
0
0
1
X
X
X
SA13
64Kbytes
32Kwords
A0000h-AFFFFh
50000h-57FFFh
1
0
1
0
X
X
X
SA14
64Kbytes
32Kwords
B0000h-BFFFFh
58000h-5FFFFh
1
0
1
1
X
X
X
SA15
64Kbytes
32Kwords
C0000h-CFFFFh
60000h-67FFFh
1
1
0
0
X
X
X
SA16
64Kbytes
32Kwords
D0000h-DFFFFh
68000h-6FFFFh
1
1
0
1
X
X
X
SA17
64Kbytes
32Kwords
E0000h-EFFFFh
70000h-77FFFh
1
1
1
0
X
X
X
SA18
64Kbytes
32Kwords
F0000h-FFFFFh
78000h-7FFFFh
1
1
1
1
X
X
X
Note: Byte mode:address range A18:A-1, word mode:address range A18:A0.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
4
MX29LV800T/B
BLOCK DIAGRAM
CE
OE
WE
RESET
CONTROL
INPUT
HIGH VOLTAGE
LOGIC
LATCH
BUFFER
Y-DECODER
AND
X-DECODER
ADDRESS
A0-A18
PROGRAM/ERASE
WRITE
STATE
MACHINE
(WSM)
STATE
REGISTER
MX29LV800T/B
FLASH
ARRAY
Y-PASS GATE
SENSE
AMPLIFIER
PGM
DATA
HV
ARRAY
SOURCE
HV
COMMAND
DATA
DECODER
COMMAND
DATA LATCH
PROGRAM
DATA LATCH
Q0-Q15/A-1
I/O BUFFER
P/N:PM0709
REV. 1.3, JAN. 24, 2002
5
MX29LV800T/B
AUTOMATIC PROGRAMMING
AUTOMATIC ERASE ALGORITHM
The MX29LV800T/B is byte programmable using the Automatic Programming algorithm. The Automatic Programming algorithm makes the external system do not
need to have time out sequence nor to verify the data
programmed. The typical chip programming time at room
temperature of the MX29LV800T/B is less than 10 seconds.
MXIC's Automatic Erase algorithm requires the user to
write commands to the command register using standard microprocessor write timings. The device will automatically pre-program and verify the entire array. Then
the device automatically times the erase pulse width,
provides the erase verification, and counts the number
of sequences. A status bit toggling between consecutive read cycles provides feedback to the user as to the
status of the erasing operation.
AUTOMATIC PROGRAMMING ALGORITHM
Register contents serve as inputs to an internal statemachine which controls the erase and programming circuitry. During write cycles, the command register internally latches address and data needed for the programming and erase operations. During a system write cycle,
addresses are latched on the falling edge, and data are
latched on the rising edge of WE or CE, whichever happens first.
MXIC's Automatic Programming algorithm requires the
user to only write program set-up commands (including
2 unlock write cycle and A0H) and a program command
(program data and address). The device automatically
times the programming pulse width, provides the program verification, and counts the number of sequences.
The device provides an unlock bypass mode with faster
programming. Only two write cycles are needed to program a word or byte, instead of four. A status bit similar
to DATA polling and a status bit toggling between consecutive read cycles, provide feedback to the user as
to the status of the programming operation. Refer to write
operation status, table 7, for more information on these
status bits.
MXIC's Flash technology combines years of EPROM
experience to produce the highest levels of quality, reliability, and cost effectiveness. The MX29LV800T/B electrically erases all bits simultaneously using FowlerNordheim tunneling. The bytes are programmed by using the EPROM programming mechanism of hot electron injection.
During a program cycle, the state-machine will control
the program sequences and command register will not
respond to any command set. During a Sector Erase
cycle, the command register will only respond to Erase
Suspend command. After Erase Suspend is completed,
the device stays in read mode. After the state machine
has completed its task, it will allow the command register to respond to its full command set.
AUTOMATIC CHIP ERASE
The entire chip is bulk erased using 10 ms erase pulses
according to MXIC's Automatic Chip Erase algorithm.
Typical erasure at room temperature is accomplished in
less than 25 second. The Automatic Erase algorithm
automatically programs the entire array prior to electrical erase. The timing and verification of electrical erase
are controlled internally within the device.
AUTOMATIC SELECT
AUTOMATIC SECTOR ERASE
The auto select mode provides manufacturer and device identification, and sector protection verification,
through identifier codes output on Q7~Q0. This mode is
mainly adapted for programming equipment on the device to be programmed with its programming algorithm.
When programming by high voltage method, automatic
select mode requires VID (11.5V to 12.5V) on address
pin A9 and other address pin A6, A1 and A0 as referring
to Table 3. In addition, to access the automatic select
codes in-system, the host can issue the automatic se-
The MX29LV800T/B is sector(s) erasable using MXIC's
Auto Sector Erase algorithm. The Automatic Sector
Erase algorithm automatically programs the specified
sector(s) prior to electrical erase. The timing and verification of electrical erase are controlled internally within
the device. An erase operation can erase one sector,
multiple sectors, or the entire device.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
6
MX29LV800T/B
lect command through the command register without
requiring VID, as shown in table4.
To verify whether or not sector being protected, the sector address must appear on the appropriate highest order address bit (see Table 1 and Table 2). The rest of
address bits, as shown in table3, are don't care. Once
all necessary bits have been set as required, the programming equipment may read the corresponding identifier code on Q7~Q0.
TABLE 3. MX29LV800T/B AUTO SELECT MODE OPERATION
Description
Mode
Read Silicon ID
CE
OE
WE
A18
A11
A9
A8
A6
A5
|
|
|
|
A12
A10
A7
A2
A1
A0
Q15~Q0
L
L
H
X
X
VID
X
L
X
L
L
C2H
Manfacturer Code
Read Silicon ID
Word
L
L
H
X
X
VID
X
L
X
L
H
22DAH
(Top Boot Block)
Byte
L
L
H
X
X
VID
X
L
X
L
H
XXDAH
Device ID
Word
L
L
H
X
X
VID
X
L
X
L
H
225BH
L
L
H
X
X
VID
X
L
X
L
H
XX5BH
(Bottom Boot Block) Byte
XX01H
Sector Protection
Verification
L
L
H
SA
X
VID
X
L
X
H
L
(protected)
XX00H
(unprotected)
NOTE:SA=Sector Address, X=Don't Care, L=Logic Low, H=Logic High
P/N:PM0709
REV. 1.3, JAN. 24, 2002
7
MX29LV800T/B
TABLE 4. MX29LV800T/B COMMAND DEFINITIONS
Command
Bus
First Bus
Cycle
Cycle Addr
Second Bus
Cycle
Data Addr
Third Bus
Cycle
Fourth Bus
Cycle
Data Addr
Data Addr
Data
Reset
1
XXXH F0H
Read
1
RA
Word
4
555H AAH 2AAH
55H
555H
90H ADI
DDI
Byte
4
AAAH AAH 555H
55H
AAAH
90H ADI
DDI
Word
4
555H AAH 2AAH
55H
555H
90H (SA)
XX00H
Read Silicon ID
Sector Protect
x02H
4
AAAH AAH 555H
55H
AAAH
90H (SA)
x04H
Porgram
Addr
Sixth Bus
Cycle
Data Addr Data
RD
Verify
Byte
Fifth Bus
Cycle
XX01H
00H
01H
Word
4
555H AAH 2AAH
55H
555H
A0H PA
PD
Byte
4
AAAH AAH 555H
55H
AAAH
A0H PA
PD
Word
6
555H AAH 2AAH
55H
555H
80H 555H AAH
2AAH 55H
555H 10H
Byte
6
AAAH AAH 555H
55H
AAAH
80H AAAH AAH
555H 55H
AAAH 10H
Word
6
555H AAH 2AAH
55H
555H
80H 555H AAH
2AAH 55H
SA
30H
Byte
6
AAAH AAH 555H
55H
AAAH
80H AAAH AAH
555H 55H
SA
30H
Sector Erase Suspend
1
XXXH B0H
Sector Erase Resume
1
XXXH 30H
Chip Erase
Sector Erase
Note:
1. ADI = Address of Device identifier; A1=0, A0 = 0 for manufacturer code,A1=0, A0 = 1 for device code. A2-A18=do not care.
(Refer to table 3)
DDI = Data of Device identifier : C2H for manufacture code, 22DA/DA(Top), and 225B/5B(Bottom) for device code.
X = X can be VIL or VIH
RA=Address of memory location to be read.
RD=Data to be read at location RA.
2.PA = Address of memory location to be programmed.
PD = Data to be programmed at location PA.
SA = Address of the sector to be erased.
3.The system should generate the following address patterns: 555H or 2AAH to Address A10~A0 in word mode/AAAH or
555H to Address A10~A-1 in byte mode.
Address bit A11~A18=X=Don't care for all address commands except for Program Address (PA) and Sector
Address (SA). Write Sequence may be initiated with A11~A18 in either state.
4. For Sector Protect Verify operation:If read out data is 01H, it means the sector has been protected. If read out data is 00H, it
means the sector is still not being protected.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
8
MX29LV800T/B
COMMAND DEFINITIONS
sequences. Note that the Erase Suspend (B0H) and
Erase Resume (30H) commands are valid only while the
Sector Erase operation is in progress.
Device operations are selected by writing specific address and data sequences into the command register.
Writing incorrect address and data values or writing them
in the improper sequence will reset the device to the
read mode. Table 4 defines the valid register command
TABLE 5. MX29LV800T/B BUS OPERATION
ADDRESS
DESCRIPTION
CE
OE
WE
A18 A10 A9 A8
A12 A11
Read
L
L
A6 A5 A1
A7
H
Q8~Q15
A0
Q0~Q7
A2
AIN
Dout
BYTE
BYTE
=VIH
=VIL
Dout
=High Z
DQ15=A-1
Write
L
H
L
AIN
DIN(3)
DIN
Reset
X
X
X
X
High Z
High Z
High Z
Temproary sector unlock
X
X
X
AIN
DIN
DIN
High Z
Output Disable
L
H
H
X
High Z
High Z
High Z
Vcc ± 0.3V
X
X
X
High Z
High Z
High Z
L
H
L
DIN
X
X
Sector Unprotect
L
H
L
X
Sector Protection Verify
L
L
H
SA
Standby
Sector Protect
SA
X
X
X
L
X
H
L
X
X
X
H
X
H
L
DIN
X
X
X VID X
L
X
H
L
CODE(5)
X
X
NOTES:
1. Manufacturer and device codes may also be accessed via a command register write sequence. Refer to Table 4.
2. VID is the Silicon-ID-Read high voltage, 11.5V to 12.5V.
3. Refer to Table 4 for valid Data-In during a write operation.
4. X can be VIL or VIH.
5. Code=00H/XX00H means unprotected.
Code=01H/XX01H means protected.
6. A18~A12=Sector address for sector protect.
7.The sector protect and chip unprotect functions may also be implemented via programming equipment.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
9
MX29LV800T/B
REQUIREMENTS FOR READING ARRAY
DATA
Refer to the Autoselect Mode and Autoselect Command
Sequence section for more information.
To read array data from the outputs, the system must
drive the CE and OE pins to VIL. CE is the power control
and selects the device. OE is the output control and gates
array data to the output pins. WE should remain at VIH.
ICC2 in the DC Characteristics table represents the
active current specification for the write mode. The "AC
Characteristics" section contains timing specification
table and timing diagrams for write operations.
The internal state machine is set for reading array data
upon device power-up, or after a hardware reset. This
ensures that no spurious alteration of the memory contect
occurs during the power transition. No command is
necessary in this mode to obtain array data. Standard
microprocessor read cycles that assert valid address on
the device address inputs produce valid data on the device
data outputs. The device remains enabled for read access
until the command register contents are altered.
STANDBY MODE
When using both pins of CE and RESET, the device
enter CMOS Standby with both pins held at Vcc ± 0.3V.
IF CE and RESET are held at VIH, but not within the
range of VCC ± 0.3V, the device will still be in the standby
mode, but the standby current will be larger. During Auto
Algorithm operation, Vcc active current (Icc2) is required
even CE = "H" until the operation is complated. The device can be read with standard access time (tCE) from
either of these standby modes, before it is ready to read
data.
WRITE COMMANDS/COMMAND
SEQUENCES
To program data to the device or erase sectors of memory
, the sysytem must drive WE and CE to VIL, and OE to
VIH.
OUTPUT DISABLE
With the OE input at a logic high level (VIH), output from
the devices are disabled. This will cause the output pins
to be in a high impedance state.
The device features an Unlock Bypass mode to facilitate
faster programming. Once the device enters the Unlock
Bypass mode, only two write cycles are required to
program a byte, instead of four. The "byte Program
Command Sequence" section has details on
programming data to the device using both standard and
Unlock Bypass command sequences.
RESET OPERATION
The RESET pin provides a hardware method of resetting
the device to reading array data. When the RESET pin is
driven low for at least a period of tRP, the device
immediately terminates any operation in progress,
tristates all output pins, and ignores all read/write
commands for the duration of the RESET pluse. The
device also resets the internal state machine to reading
array data. The operation that was interrupted should be
reinitated once the device is ready to accept another
command sequence, to ensure data integrity
An erase operation can erase one sector, multiple sectors
, or the entire device. Table indicates the address space
that each sector occupies. A "sector address" consists
of the address bits required to uniquely select a sector.
The "Writing specific address and data commands or
sequences into the command register initiates device
operations. Table 1 defines the valid register command
sequences. Writing incorrect address and data values or
writing them in the improper sequence resets the device
to reading array data."section has details on erasing a
sector or the entire chip, or suspending/resuming the erase
operation.
Current is reduced for the duration of the RESET pulse.
When RESET is held at VSS±0.3V, the device draws
CMOS standby current (ICC4). If RESET is held at VIL
but not within VSS±0.3V, the standby current will be
greater.
After the system writes the autoselect command
sequence, the device enters the autoselect mode. The
system can then read autoselect codes from the internal
reqister (which is separate from the memory array) on
Q7-Q0. Standard read cycle timings apply in this mode.
The RESET pin may be tied to system reset circuitry. A
system reset would that also reset the Flash memory,
enabling the system to read the boot-up firm-ware from
P/N:PM0709
REV. 1.3, JAN. 24, 2002
10
MX29LV800T/B
the Flash memory.
SET-UP AUTOMATIC CHIP/SECTOR ERASE
COMMANDS
If RESET is asserted during a program or erase
operation, the RY/BY pin remains a "0" (busy) until the
internal reset operation is complete, which requires a
time of tREADY (during Embedded Algorithms). The
sysytem can thus monitor RY/BY to determine whether
the reset operation is complete. If RESET is asserted
when a program or erase operation is commpleted within
a time of tREADY (not during Embedded Algorithms).
The system can read data tRH after the RESET pin
returns to VIH.
Chip erase is a six-bus cycle operation. There are two
"unlock" write cycles. These are followed by writing the
"set-up" command 80H. Two more "unlock" write cycles are then followed by the chip erase command 10H
or sector erase command 30H.
The Automatic Chip Erase does not require the device
to be entirely pre-programmed prior to executing the Automatic Chip Erase. Upon executing the Automatic Chip
Erase, the device will automatically program and verify
the entire memory for an all-zero data pattern. When the
device is automatically verified to contain an all-zero
pattern, a self-timed chip erase and verify begin. The
erase and verify operations are completed when the data
on Q7 is "1" at which time the device returns to the
Read mode. The system is not required to provide any
control or timing during these operations.
Refer to the AC Characteristics tables for RESET
parameters and to Figure 22 for the timing diagram.
READ/RESET COMMAND
The read or reset operation is initiated by writing the
read/reset command sequence into the command register. Microprocessor read cycles retrieve array data.
The device remains enabled for reads until the command
register contents are altered.
When using the Automatic Chip Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array(no
erase verification command is required).
If program-fail or erase-fail happen, the write of F0H will
reset the device to abort the operation. A valid command must then be written to place the device in the
desired state.
If the Erase operation was unsuccessful, the data on
Q5 is "1"(see Table 7), indicating the erase operation
exceed internal timing limit.
The automatic erase begins on the rising edge of the
last WE or CE pulse, whichever happens first in the
command sequence and terminates when the data on
Q7 is "1" at which time the device returns to the Read
mode, or the data on Q6 stops toggling for two consecutive read cycles at which time the device returns to the
Read mode.
SILICON-ID READ COMMAND
Flash memories are intended for use in applications where
the local CPU alters memory contents. As such, manufacturer and device codes must be accessible while the
device resides in the target system. PROM programmers typically access signature codes by raising A9 to
a high voltage(VID). However, multiplexing high voltage
onto address lines is not generally desired system design practice.
The MX29LV800T/B contains a Silicon-ID-Read operation to supple traditional PROM programming methodology. The operation is initiated by writing the read silicon
ID command sequence into the command register. Following the command write, a read cycle with A1=VIL,
A0=VIL retrieves the manufacturer code of C2H/00C2H.
A read cycle with A1=VIL, A0=VIH returns the device
code of DAH/22DAH for MX29LV800T, 5BH/225BH for
MX29LV800B.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
11
MX29LV800T/B
TABLE 6. SILICON ID CODE
Pins
Manufacture code
A0
A1
Q15~Q8 Q7
Q6
Q5
Q4
Q3
Q2 Q1
Q0
Code(Hex)
Word
VIL
VIL
00H
1
1
0
0
0
0
1
0
00C2H
Byte
VIL
VIL
X
1
1
0
0
0
0
1
0
C2H
Device code
Word
VIH
VIL
22H
1
1
0
1
1
0
1
0
22DAH
for MX29LV800T
Byte
VIH
VIL
X
1
1
0
1
1
0
1
0
DAH
Device code
Word
VIH
VIL
22H
0
1
0
1
1
0
1
1
225BH
for MX29LV800B
Byte
VIH
VIL
X
0
1
0
1
1
0
1
1
5BH
Sector Protection
Word
X
VIH
X
0
0
0
0
0
0
0
1
01H (Protected)
Verification
Byte
X
VIH
X
0
0
0
0
0
0
0
0
00H (Unprotected)
READING ARRAY DATA
RESET COMMAND
The device is automatically set to reading array data
after device power-up. No commands are required to
retrieve data. The device is also ready to read array data
after completing an Automatic Program or Automatic
Erase algorithm.
Writing the reset command to the device resets the
device to reading array data. Address bits are don't care
for this command.
The reset command may be written between the sequence cycles in an erase command sequence before
erasing begins. This resets the device to reading array
data. Once erasure begins, however, the device ignores
reset commands until the operation is complete.
After the device accepts an Erase Suspend command,
the device enters the Erase Suspend mode. The system can read array data using the standard read timings, except that if it reads at an address within erasesuspended sectors, the device outputs status data. After
completing a programming operation in the Erase
Suspend mode, the system may once again read array
data with the same exception. See rase Suspend/Erase
Resume Commands” for more infor-mation on this mode.
The system must issue the reset command to re-enable the device for reading array data if Q5 goes high, or
while in the autoselect mode. See the "Reset Command"
section, next.
The reset command may be written between the sequence cycles in a program command sequence be-fore
programming begins. This resets the device to reading
array data (also applies to programming in Erase
Suspend mode). Once programming begins,however, the
device ignores reset commands until the operation is
complete.
The reset command may be written between the sequence cycles in an SILICON ID READ command
sequence. Once in the SILICON ID READ mode, the
reset command must be written to return to reading array
data (also applies to SILICON ID READ during Erase
Suspend).
If Q5 goes high during a program or erase operation,
writing the reset command returns the device to reading array data (also applies during Erase Suspend).
P/N:PM0709
REV. 1.3, JAN. 24, 2002
12
MX29LV800T/B
mand is issued during the sector erase operation, the
device requires a maximum 20us to suspend the sector
erase operation. However, when the Erase Suspend command is written during the sector erase time-out, the
device immediately terminates the time-out period and
suspends the erase operation. After this command has
been executed, the command register will initiate erase
suspend mode. The state machine will return to read
mode automatically after suspend is ready. At this time,
state machine only allows the command register to respond to Erase Resume, program data to , or read data
from any sector not selected for erasure.
SECTOR ERASE COMMANDS
The Automatic Sector Erase does not require the device to be entirely pre-programmed prior to executing
the Automatic Sector Erase Set-up command and Automatic Sector Erase command. Upon executing the
Automatic Sector Erase command, the device will automatically program and verify the sector(s) memory for
an all-zero data pattern. The system is not required to
provide any control or timing during these operations.
When the sector(s) is automatically verified to contain
an all-zero pattern, a self-timed sector erase and verify
begin. The erase and verify operations are complete
when either the data on Q7 is "1" at which time the device returns to the Read mode, or the data on Q6 stops
toggling for two consecutive read cycles at which time
the device returns to the Read mode. The system is not
required to provide any control or timing during these
operations.
The system can determine the status of the program
operation using the Q7 or Q6 status bits, just as in the
standard program operation. After an erase-suspend program operation is complete, the system can once again
read array data within non-suspended sectors.
ERASE RESUME
When using the Automatic sector Erase algorithm, note
that the erase automatically terminates when adequate
erase margin has been achieved for the memory array
(no erase verification command is required). Sector
erase is a six-bus cycle operation. There are two "unlock" write cycles. These are followed by writing the
set-up command 80H. Two more "unlock" write cycles
are then followed by the sector erase command 30H.
The sector address is latched on the falling edge of WE
or CE, whichever happens later, while the command(data)
is latched on the rising edge of WE or CE, whichever
happens first. Sector addresses selected are loaded
into internal register on the sixth falling edge of WE or
CE, whichever happens later. Each successive sector
load cycle started by the falling edge of WE or CE,
whichever happens later must begin within 50us from
the rising edge of the preceding WE or CE, whichever
happens first. Otherwise, the loading period ends and
internal auto sector erase cycle starts. (Monitor Q3 to
determine if the sector erase timer window is still open,
see section Q3, Sector Erase Timer.) Any command other
than Sector Erase(30H) or Erase Suspend(B0H) during
the time-out period resets the device to read mode.
This command will cause the command register to clear
the suspend state and return back to Sector Erase mode
but only if an Erase Suspend command was previously
issued. Erase Resume will not have any effect in all
other conditions. Another Erase Suspend command can
be written after the chip has resumed erasing.
WORD/BYTE PROGRAM COMMAND SEQUENCE
The device programs one byte of data for each program
operation. The command sequence requires four bus
cycles, and is initiated by writing two unlock write cycles,
followed by the program set-up command. The program
address and data are written next, which in turn initiate
the Embedded Program algorithm. The system is not
required to provide further controls or timings. The device
automatically generates the program pulses and verifies
the programmed cell margin. Table 1 shows the address
and data requirements for the byte program command
sequence.
When the Embedded Program algorithm is complete,
the device then returns to reading array data and
addresses are no longer latched. The system can
determine the status of the program operation by using
Q7, Q6, or RY/BY. See "Write Operation Status" for
information on these status bits.
ERASE SUSPEND
This command only has meaning while the state machine is executing Automatic Sector Erase operation,
and therefore will only be responded during Automatic
Sector Erase operation. When the Erase Suspend Com-
Any commands written to the device during the Em-
P/N:PM0709
REV. 1.3, JAN. 24, 2002
13
MX29LV800T/B
bedded Program Algorithm are ignored. Note that a
hardware reset immediately terminates the programming
operat ion. The Byte Program command sequence should
be reinitiated once the device has reset to reading array
data, to ensure data integrity.
this, the device outputs the "complement,” or "0".” The
system must provide an address within any of the sectors selected for erasure to read valid status information
on Q7.
After an erase command sequence is written, if all sectors selected for erasing are protected, Data Polling on
Q7 is active for approximately 100 us, then the device
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
Programming is allowed in any sequence and across
sector boundaries. A bit cannot be programmed from a
"0" back to a "1". Attempting to do so may halt the
operation and set Q5 to "1" ,” or cause the Data Polling
algorithm to indicate the operation was successful.
However, a succeeding read will show that the data is
still "0". Only erase operations can convert a "0" to a
"1".
When the system detects Q7 has changed from the
complement to true data, it can read valid data at Q7-Q0
on the following read cycles. This is because Q7 may
change asynchr onously with Q0-Q6 while Output Enable (OE) is asserted low.
WRITE OPERSTION STATUS
The device provides several bits to determine the status of a write operation: Q2, Q3, Q5, Q6, Q7, and RY/
BY. Table 10 and the following subsections describe the
functions of these bits. Q7, RY/BY, and DQ6 each offer
a method for determining whether a program or erase
operation is complete or in progress. These three bits
are discussed first.
RY/BY:Ready/Busy
The RY/BY is a dedicated, open-drain output pin that
indicates whether an Automatic Erase/Program algorithm
is in progress or complete. The RY/BY status is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence. Since RY/BY
is an open-drain output, several RY/BY pins can be tied
together in parallel with a pull-up resistor to Vcc.
Q7: Data Polling
The Data Polling bit, Q7, indicates to the host sys-tem
whether an Automatic Algorithm is in progress or completed, or whether the device is in Erase Suspend. Data
Polling is valid after the rising edge of the final WE pulse
in the program or erase command sequence.
If the output is low (Busy), the device is actively erasing
or programming. (This includes programming in the Erase
Suspend mode.)If the output is high (Ready), the device
is ready to read array data (including during the Erase
Suspend mode), or is in the standby mode.
During the Automatic Program algorithm, the device outputs on Q7 the complement of the datum programmed
to Q7. This Q7 status also applies to programming during Er ase Suspend. When the Automatic Program algorithm is complete, the device outputs the datum programmed to Q7. The system must provide the program
address to read valid status information on Q7. If a program address falls within a protected sector, Data Polling on Q7 is active for approximately 1 us, then the device returns to reading array data.
Table 7 shows the outputs for RY/BY during write operation.
Q6:Toggle BIT I
Toggle Bit I on Q6 indicates whether an Automatic Program or Erase algorithm is in progress or complete, or
whether the device has entered the Erase Suspend mode.
Toggle Bit I may be read at any address, and is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence(prior to the program or erase operation), and during the sector time-
During the Automatic Erase algorithm, Data Polling produces a "0" on Q7. When the Automatic Erase algorithm is complete, or if the device enters the Erase Suspend mode, Data Polling produces a "1" on Q7. This is
analogous to the complement/true datum out-put described for the Automatic Program algorithm: the erase
function changes all the bits in a sector to "1" prior to
P/N:PM0709
REV. 1.3, JAN. 24, 2002
14
MX29LV800T/B
During an Automatic Program or Erase algorithm operation, successive read cycles to any address cause Q6
to toggle. The system may use either OE or CE to control the read cycles. When the operation is complete, Q6
stops toggling.
are required for sectors and mode information. Refer to
Table 7 to compare outputs for Q2 and Q6.
After an erase command sequence is written, if all sectors selected for erasing are protected, Q6 toggles and
returns to reading array data. If not all selected sectors
are protected, the Automatic Erase algorithm erases the
unprotected sectors, and ignores the selected sectors
that are protected.
Whenever the system initially begins reading toggle bit
status, it must read Q7-Q0 at least twice in a row to
determine whether a toggle bit is toggling. Typically, the
system would note and store the value of the toggle bit
after the first read. After the second read, the system
would compare the new value of the toggle bit with the
first. If the toggle bit is not toggling, the device has
completed the program or erase operation. The system
can read array data on Q7-Q0 on the following read cycle.
Reading Toggle Bits Q6/ Q2
The system can use Q6 and Q2 together to determine
whether a sector is actively erasing or is erase suspended. When the device is actively erasing (that is, the
Automatic Erase algorithm is in progress), Q6 toggling.
When the device enters the Erase Suspend mode, Q6
stops toggling. However, the system must also use Q2
to determine which sectors are erasing or erase-suspended. Alternatively, the system can use Q7.
However, if after the initial two read cycles, the system
determines that the toggle bit is still toggling, the system also should note whether the value of Q5 is high
(see the section on Q5). If it is, the system should then
determine again whether the toggle bit is toggling, since
the toggle bit may have stopped toggling just as Q5 went
high. If the toggle bit is no longer toggling, the device
has successfuly completed the program or erase operation. If it is still toggling, the device did not complete the
operation successfully, and the system must write the
reset command to return to reading array data.
If a program address falls within a protected sector, Q6
toggles for approximately 2 us after the program command sequence is written, then returns to reading array
data.
Q6 also toggles during the erase-suspend-program mode,
and stops toggling once the Automatic Program algorithm is complete.
The remaining scenario is that system initially determines
that the toggle bit is toggling and Q5 has not gone high.
The system may continue to monitor the toggle bit and
Q5 through successive read cycles, determining the status as described in the previous paragraph. Alternatively, it may choose to perform other system tasks. In
this case, the system must start at the beginning of the
algorithm when it returns to determine the status of the
operation.
Table 7 shows the outputs for Toggle Bit I on Q6.
Q2:Toggle Bit II
The "Toggle Bit II" on Q2, when used with Q6, indicates
whether a particular sector is actively eraseing (that is,
the Automatic Erase alorithm is in process), or whether
that sector is erase-suspended. Toggle Bit II is valid
after the rising edge of the final WE or CE, whichever
happens first, in the command sequence.
Q5
Exceeded Timing Limits
Q5 will indicate if the program or erase time has exceeded the specified limits(internal pulse count). Under
these conditions Q5 will produce a "1". This time-out
condition indicates that the program or erase cycle was
not successfully completed. Data Polling and Toggle Bit
are the only operating functions of the device under this
condition.
Q2 toggles when the system reads at addresses within
those sectors that have been selected for erasure. (The
system may use either OE or CE to control the read
cycles.) But Q2 cannot distinguish whether the sector
is actively erasing or is erase-suspended. Q6, by comparison, indicates whether the device is actively erasing, or is in Erase Suspend, but cannot distinguish which
sectors are selected for erasure. Thus, both status bits
P/N:PM0709
REV. 1.3, JAN. 24, 2002
15
MX29LV800T/B
If this time-out condition occurs during sector erase operation, it specifies that a particular sector is bad and it
may not be reused. However, other sectors are still functional and may be used for the program or erase operation. The device must be reset to use other sectors.
Write the Reset command sequence to the device, and
then execute program or erase command sequence. This
allows the system to continue to use the other active
sectors in the device.
If this time-out condition occurs during the byte programming operation, it specifies that the entire sector containing that byte is bad and this sector maynot be reused, (other sectors are still functional and can be reused).
The time-out condition will not appear if a user tries to
program a non blank location without erasing. Please
note that this is not a device failure condition since the
device was incorrectly used.
If this time-out condition occurs during the chip erase
operation, it specifies that the entire chip is bad or combination of sectors are bad.
Table 7. WRITE OPERATION STATUS
Status
Byte Program in Auto Program Algorithm
Auto Erase Algorithm
Erase Suspend Read
(Erase Suspended Sector)
Q7
(Note1)
Q6
Q5
Q3
(Note2)
Q2
RY/BY
Q7
Toggle
0
N/A
No
Toggle
0
0
Toggle
0
1
Toggle
0
1
No
Toggle
0
N/A Toggle
1
Data
Data
Q7
Toggle
0
N/A
N/A
0
Q7
Toggle
1
N/A
No
Toggle
0
0
Toggle
1
1
Toggle
0
Q7
Toggle
1
N/A
N/A
0
In Progress
Erase Suspended Mode
Erase Suspend Read
(Non-Erase Suspended Sector)
Erase Suspend Program
Byte Program in Auto Program Algorithm
Exceeded
Time Limits
Auto Erase Algorithm
Erase Suspend Program
Data Data Data
1
Note:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
16
MX29LV800T/B
Q3
Sector Erase Timer
POWER SUPPLY DECOUPLING
In order to reduce power switching effect, each device
should have a 0.1uF ceramic capacitor connected between its VCC and GND.
After the completion of the initial sector erase command
sequence, the sector erase time-out will begin. Q3 will
remain low until the time-out is complete. Data Polling
and Toggle Bit are valid after the initial sector erase command sequence.
POWER-UP SEQUENCE
The MX29LV800T/B powers up in the Read only mode.
In addition, the memory contents may only be altered
after successful completion of the predefined command
sequences.
If Data Polling or the Toggle Bit indicates the device has
been written with a valid erase command, Q3 may be
used to determine if the sector erase timer window is
still open. If Q3 is high ("1") the internally controlled
erase cycle has begun; attempts to write subsequent
commands to the device will be ignored until the erase
operation is completed as indicated by Data Polling or
Toggle Bit. If Q3 is low ("0"), the device will accept
additional sector erase commands. To insure the command has been accepted, the system software should
check the status of Q3 prior to and following each subsequent sector erase command. If Q3 were high on the
second status check, the command may not have been
accepted.
TEMPORARY SECTOR UNPROTECT
This feature allows temporary unprotection of previously
protected sector to change data in-system. The Temporary Sector Unprotect mode is activated by setting the
RESET pin to VID(11.5V-12.5V). During this mode, formerly protected sectors can be programmed or erased
as un-protected sector. Once VID is remove from the
RESET pin,all the previously protected sectors are protected again.
DATA PROTECTION
SECTOR PROTECTION
The MX29LV800T/B is designed to offer protection
against accidental erasure or programming caused by
spurious system level signals that may exist during power
transition. During power up the device automatically resets the state machine in the Read mode. In addition,
with its control register architecture, alteration of the
memory contents only occurs after successful completion of specific command sequences. The device also
incorporates several features to prevent inadvertent write
cycles resulting from VCC power-up and power-down transition or system noise.
The MX29LV800T/B features hardware sector protection. This feature will disable both program and erase
operations for these sectors protected. To activate this
mode, the programming equipment must force VID on
address pin A9 and OE (suggest VID = 12V). Programming of the protection circuitry begins on the falling edge
of the WE pulse and is terminated on the rising edge.
Please refer to sector protect algorithm and waveform.
To verify programming of the protection circuitry, the programming equipment must force VID on address pin A9
( with CE and OE at VIL and WE at VIH). When A1=VIH,
A0=VIL, A6=VIL, it will produce a logical "1" code at
device output Q0 for a protected sector. Otherwise the
device will produce 00H for the unprotected sector. In
this mode, the addresses,except for A1, are don't care.
Address locations with A1 = VIL are reserved to read
manufacturer and device codes.(Read Silicon ID)
WRITE PULSE "GLITCH" PROTECTION
Noise pulses of less than 5ns(typical) on CE or WE will
not initiate a write cycle.
LOGICAL INHIBIT
It is also possible to determine if the sector is protected
in the system by writing a Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
a logical "1" at Q0 for the protected sector.
Writing is inhibited by holding any one of OE = VIL, CE
= VIH or WE = VIH. To initiate a write cycle CE and WE
must be a logical zero while OE is a logical one.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
17
MX29LV800T/B
CHIP UNPROTECT
The MX29LV800T/B also features the chip unprotect
mode, so that all sectors are unprotected after chip
unprotect is completed to incorporate any changes in the
code. It is recommended to protect all sectors before
activating chip unprotect mode.
To activate this mode, the programming equipment must
force VID on control pin OE and address pin A9. The CE
pins must be set at VIL. Pins A6 must be set to VIH.
Refer to chip unprotect algorithm and waveform for the
chip unprotect algorithm. The unprotection mechanism
begins on the falling edge of the WE pulse and is
terminated on the rising edge.
It is also possible to determine if the chip is unprotected
in the system by writing the Read Silicon ID command.
Performing a read operation with A1=VIH, it will produce
00H at data outputs(Q0-Q7) for an unprotected sector.
It is noted that all sectors are unprotected after the chip
unprotect algorithm is completed.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
18
MX29LV800T/B
ABSOLUTE MAXIMUM RATINGS
OPERATING RATINGS
Storage Temperature
Plastic Packages . . . . . . . . . . . . . ..... -65oC to +150oC
Ambient Temperature
with Power Applied. . . . . . . . . . . . . .... -65oC to +125oC
Voltage with Respect to Ground
VCC (Note 1) . . . . . . . . . . . . . . . . . -0.5 V to +4.0 V
A9, OE, and
RESET (Note 2) . . . . . . . . . . . ....-0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . -0.5 V to VCC +0.5 V
Output Short Circuit Current (Note 3) . . . . . . 200 mA
Commercial (C) Devices
Ambient Temperature (TA ). . . . . . . . . . . . 0°C to +70°C
Industrial (I) Devices
Ambient Temperature (TA ). . . . . . . . . . -40°C to +85°C
VCC Supply Voltages
VCC for regulated voltage range . . . . . +3.0 V to 3.6 V
VCC for full voltage range. . . . . . . . . . . +2.7 V to 3.6 V
Operating ranges define those limits between which the
functionality of the device is guaranteed.
Notes:
1. Minimum DC voltage on input or I/O pins is -0.5 V.
During voltage transitions, input or I/O pins may overshoot VSS to -2.0 V for periods of up to 20 ns. See
Figure 6. Maximum DC voltage on input or I/O pins is
VCC +0.5 V. During voltage transitions, input or I/O
pins may overshoot to VCC +2.0 V for periods up to
20 ns.
2. Minimum DC input voltage on pins A9, OE, and
RESET is -0.5 V. During voltage transitions, A9, OE,
and RESET may overshoot VSS to -2.0 V for periods
of up to 20 ns. See Figure 6. Maximum DC input voltage on pin A9 is +12.5 V which may overshoot to
14.0 V for periods up to 20 ns.
3. No more than one output may be shorted to ground at
a time. Duration of the short circuit should not be
greater than one second.
Stresses above those listed under "Absolute Maximum
Rat-ings" may cause permanent damage to the device.
This is a stress rating only; functional operation of the
device at these or any other conditions above those indicated in the operational sections of this data sheet is
not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect
device reliability.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
19
MX29LV800T/B
CAPACITANCE TA = 25oC, f = 1.0 MHz
SYMBOL
PARAMETER
CIN1
CIN2
COUT
MIN.
TYP
MAX.
UNIT
CONDITIONS
Input Capacitance
8
pF
VIN = 0V
Control Pin Capacitance
12
pF
VIN = 0V
Output Capacitance
12
pF
VOUT = 0V
READ OPERATION
Table 8. DC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V
Symbol
PARAMETER
ILI
MIN.
TYP
MAX.
UNIT
CONDITIONS
Input Leakage Current
±1
uA
VIN = VSS to VCC
ILIT
A9 Input Leakage Current
35
uA
VCC=VCC max; A9=12.5V
ILO
Output Leakage Current
±1
uA
VOUT = VSS to VCC, VCC=VCC max
ICC1
VCC Active Read Current
7
12
mA
CE=VIL, OE=VIH
@5MHz
2
4
mA
(Byte Mode)
@1MHz
7
12
mA
CE=VIL, OE=VIH
@5MHz
2
4
mA
(Word Mode)
@1MHz
ICC2
VCC Active write Current
15
30
mA
CE=VIL, OE=VIH
ICC3
VCC Standby Current
0.2
5
uA
CE; RESET=VCC ± 0.3V
ICC4
VCC Standby Current
0.2
5
uA
RESET=VSS ± 0.3V
0.2
5
uA
VIH=VCC ± 0.3V;VIL=VSS ± 0.3V
-0.5
0.8
V
0.7xVCC
VCC+ 0.3
V
11.5
12.5
V
VCC=3.3V
0.45
V
IOL = 4.0mA, VCC= VCC min
During Reset
ICC5
Automative sleep mode
VIL
Input Low Voltage(Note 1)
VIH
Input High Voltage
VID
Voltage for Automative
Select and Temporary
Sector Unprotect
VOL
Output Low Voltage
VOH1
Output High Voltage(TTL)
VOH2
Output High Voltage
0.85xVCC
IOH = -2mA, VCC=VCC min
VCC-0.4
IOH = -100uA, VCC min
(CMOS)
VLKO
Low VCC Lock-out
2.3
2.5
V
Voltage
NOTES:
1.VIL min. = -1.0V for pulse width is equal to or less than 50 ns.
VIL min. = -2.0V for pulse width is equal to or less than 20 ns.
2.VIH max. = VCC + 1.5V for pulse width is equal to or less than 20 ns
If VIH is over the specified maximum value, read operation cannot be guaranteed.
3.Automatic sleep mode enable the low power mode when addresses remain stable for tACC +30ns.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
20
MX29LV800T/B
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V
Table 9. READ OPERATIONS
SYMBOL
PARAMETER
tRC
Read Cycle Time (Note 1)
tACC
29LV800T/B-70(R)
29LV800T/B-90
MIN.
MIN.
MAX.
UNIT
70
90
ns
Address to Output Delay
70
90
ns
CE=OE=VIL
tCE
CE to Output Delay
70
90
ns
OE=VIL
tOE
OE to Output Delay
30
35
ns
CE=VIL
tDF
OE High to Output Float (Note1)
0
30
ns
CE=VIL
tOEH
Output Enable
Read
0
0
ns
Hold Time
Toggle and Data Polling
10
10
ns
0
0
ns
tOH
Address to Output hold
MAX.
25
0
CONDITIONS
CE=OE=VIL
NOTE:
TEST CONDITIONS:
1. Not 100% tested.
2. tDF is defined as the time at which the output achieves
the open circuit condition and data is no longer driven.
3. 29LV800T/B-70R operates at VCC=3.0V~3.6V
• Input pulse levels: 0V/3.0V.
• Input rise and fall times is equal to or less than 5ns.
• Output load: 1 TTL gate + 100pF (Including scope and
jig), for 29LV800T/B-90. 1 TTL gate + 30pF (Including
scope and jig) for 29LV800T/B-70 and 29LV800T/B70R.
• Reference levels for measuring timing: 1.5V.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
21
MX29LV800T/B
SWITCHING TEST CIRCUITS
DEVICE UNDER
2.7K ohm
+3.3V
TEST
CL
6.2K ohm
DIODES=IN3064
OR EQUIVALENT
CL= 100pF Including jig capacitance
(30pF for MX29LV800T/B-70 & MX29LV800T/B-70R)
SWITCHING TEST WAVEFORMS
3.0V
TEST POINTS
0V
INPUT
OUTPUT
AC TESTING: Inputs are driven at 3.0V for a logic "1" and 0V for a logic "0".
Input pulse rise and fall times are < 5ns.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
22
MX29LV800T/B
Figure 1. READ TIMING WAVEFORMS
tRC
VIH
Addresses
ADD Valid
VIL
tACC
tCE
CE
VIH
VIL
WE
VIH
VIL
tOE
tOEH
tDF
VIH
OE
VIL
tACC
Outputs
VOH
HIGH Z
tOH
DATA Valid
HIGH Z
VOL
VIH
RESET
VIL
P/N:PM0709
REV. 1.3, JAN. 24, 2002
23
MX29LV800T/B
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V
Table 10. Erase/Program Operations
29LV800T/B-70 (R)
29LV800T/B-90
MIN.
SYMBOL
PARAMETER
MIN.
MAX.
MAX.
UNIT
tWC
Write Cycle Time (Note 1)
70
90
ns
tAS
Address Setup Time
0
0
ns
tAH
Address Hold Time
45
45
ns
tDS
Data Setup Time
35
45
ns
tDH
Data Hold Time
0
0
ns
tOES
Output Enable Setup Time
0
0
ns
tGHWL
Read Recovery Time Before Write
0
0
ns
(OE High to WE Low)
tCS
CE Setup Time
0
0
ns
tCH
CE Hold Time
0
0
ns
tWP
Write Pulse Width
35
35
ns
tWPH
Write Pulse Width High
30
30
ns
tWHWH1
Programming Operation (Note 2)
9/11(TYP.)
9/11(TYP.)
us
(Byte/Word program time)
tWHWH2
Sector Erase Operation (Note 2)
0.7(TYP.)
0.7(TYP.)
sec
tVCS
VCC Setup Time (Note 1)
50
50
us
tRB
Recovery Time from RY/BY
0
0
ns
tBUSY
Program/Erase Vaild to RY/BY Delay
tWPP1
Write Pulse Width for Sector Protect
90
100ns
(A9, OE Control)
tWPP2
10us
90
100ns
(Typ.)
Write Pulse Width for Sector Unprotect
100ns
(A9, OE Control)
12ms
(Typ.)
ns
10us
(Typ.)
100ns
12ms
(Typ.)
NOTES:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
3. 29LV800T/B-70R operates at VCC=3.0V~3.6V.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
24
MX29LV800T/B
AC CHARACTERISTICS TA = -40oC to 85oC, VCC = 2.7V~3.6V
Table 11. Alternate CE Controlled Erase/Program Operations
29LV800T/B-70 (R)
29LV800T/B-90
MIN.
SYMBOL
PARAMETER
MIN.
tWC
Write Cycle Time (Note 1)
70
70
ns
tAS
Address Setup Time
0
0
ns
tAH
Address Hold Time
45
45
ns
tDS
Data Setup Time
35
45
ns
tDH
Data Hold Time
0
0
ns
tOES
Output Enable Setup Time
0
0
ns
tGHEL
Read Recovery Time Before Write
0
0
ns
tWS
WE Setup Time
0
0
ns
tWH
WE Hold Time
0
0
ns
tCP
CE Pulse Width
35
35
ns
tCPH
CE Pulse Width High
30
30
ns
tWHWH1
Programming
Byte
9Typ.)
9(Typ.)
us
Operation(note2)
Word
11(Typ.)
11(Typ.)
us
0.7(Typ.)
0.7(Typ.)
sec
tWHWH2
Sector Erase Operation (note2)
MAX.
MAX.
UNIT
NOTE:
1. Not 100% tested.
2. See the "Erase and Programming Performance" section for more information.
3. 29LV800T/B-70R operates at VCC=3.0V~3.6V
P/N:PM0709
REV. 1.3, JAN. 24, 2002
25
MX29LV800T/B
Figure 2. COMMAND WRITE TIMING WAVEFORM
VCC
Addresses
3V
VIH
ADD Valid
VIL
tAH
tAS
WE
VIH
VIL
tOES
tWPH
tWP
tCWC
CE
VIH
VIL
tCS
OE
tCH
VIH
VIL
tDS
tDH
VIH
Data
DIN
VIL
P/N:PM0709
REV. 1.3, JAN. 24, 2002
26
MX29LV800T/B
AUTOMATIC PROGRAMMING TIMING WAVEFORM
after automatic programming starts. Device outputs
DATA during programming and DATA after programming
on Q7.(Q6 is for toggle bit; see toggle bit, DATA polling,
timing waveform)
One byte data is programmed. Verify in fast algorithm
and additional verification by external control are not required because these operations are executed automatically by internal control circuit. Programming completion can be verified by DATA polling and toggle bit checking
Figure 3. AUTOMATIC PROGRAMMING TIMING WAVEFORM
Program Command Sequence(last two cycle)
tWC
555h
Address
Read Status Data (last two cycle)
tAS
PA
PA
PA
tAH
CE
tCH
tGHWL
OE
tWHWH1
tWP
WE
tCS
tWPH
tDS tDH
A0h
Status
PD
DOUT
Data
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES:
1.PA=Program Address, PD=Program Data, DOUT is the true data the program address
P/N:PM0709
REV. 1.3, JAN. 24, 2002
27
MX29LV800T/B
Figure 4. AUTOMATIC PROGRAMMING ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data A0H Address 555H
Write Program Data/Address
Data Poll
from system
Increment
Address
No
Verify Word Ok ?
YES
No
Last Address ?
YES
Auto Program Completed
P/N:PM0709
REV. 1.3, JAN. 24, 2002
28
MX29LV800T/B
Figure 5. CE CONTROLLED PROGRAM TIMING WAVEFORM
555 for program
2AA for erase
PA for program
SA for sector erase
555 for chip erase
Data Polling
Address
PA
tWC
tAS
tAH
tWH
WE
tGHEL
OE
tCP
tWHWH1 or 2
CE
tWS
tCPH
tDS
tBUSY
tDH
DQ7 DOUT
Data
tRH
A0 for program
55 for erase
PD for program
30 for sector erase
10 for chip erase
RESET
RY/BY
NOTES:
1.PA=Program Address, PD=Program Data, DOUT=Data Out, DQ7=complement of data written to device.
2.Figure indicates the last two bus cycles of the command sequence.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
29
MX29LV800T/B
AUTOMATIC CHIP ERASE TIMING WAVEFORM
All data in chip are erased. External erase verification is
not required because data is verified automatically by
internal control circuit. Erasure completion can be verified by DATA polling and toggle bit checking after auto-
matic erase starts. Device outputs 0 during erasure
and 1 after erasure on Q7.(Q6 is for toggle bit; see toggle
bit, DATA polling, timing waveform)
Figure 6. AUTOMATIC CHIP ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC
2AAh
Address
Read Status Data
tAS
VA
555h
VA
tAH
CE
tCH
tGHWL
OE
tWHWH2
tWP
WE
tCS
tWPH
tDS
tDH
55h
In
Progress Complete
10h
Data
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
P/N:PM0709
REV. 1.3, JAN. 24, 2002
30
MX29LV800T/B
Figure 7. AUTOMATIC CHIP ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 10H Address 555H
Data Pall from System
NO
Data=FFh ?
YES
Auto Chip Erase Completed
P/N:PM0709
REV. 1.3, JAN. 24, 2002
31
MX29LV800T/B
AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Sector indicated by A12 to A18 are erased. External
erase verify is not required because data are verified
automatically by internal control circuit. Erasure completion can be verified by DATA polling and toggle bit check-
ing after automatic erase starts. Device outputs 0 during erasure and 1 after erasure on Q7.(Q6 is for toggle
bit; see toggle bit, DATA polling, timing waveform)
Figure 8. AUTOMATIC SECTOR ERASE TIMING WAVEFORM
Erase Command Sequence(last two cycle)
tWC
2AAh
Address
Read Status Data
tAS
VA
SA
VA
tAH
CE
tCH
tGHWL
OE
tWHWH2
tWP
WE
tCS
tWPH
tDS tDH
55h
In
Progress Complete
30h
Data
tBUSY
tRB
RY/BY
tVCS
VCC
NOTES:
SA=sector address(for Sector Erase), VA=Valid Address for reading status data(see "Write Operation Status").
P/N:PM0709
REV. 1.3, JAN. 24, 2002
32
MX29LV800T/B
Figure 9. AUTOMATIC SECTOR ERASE ALGORITHM FLOWCHART
START
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 80H Address 555H
Write Data AAH Address 555H
Write Data 55H Address 2AAH
Write Data 30H Sector Address
Last Sector
to Erase
NO
YES
Data Poll from System
Data=FFh
NO
YES
Auto Sector Erase Completed
P/N:PM0709
REV. 1.3, JAN. 24, 2002
33
MX29LV800T/B
Figure 10. ERASE SUSPEND/ERASE RESUME FLOWCHART
START
Write Data B0H
NO
ERASE SUSPEND
Toggle Bit checking Q6
not toggled
YES
Read Array or
Program
Reading or
Programming End
NO
YES
Write Data 30H
ERASE RESUME
Continue Erase
Another
Erase Suspend ?
NO
YES
P/N:PM0709
REV. 1.3, JAN. 24, 2002
34
MX29LV800T/B
Figure 11. IN-SYSTEM SECTOR PROTECT/UNPROTECT TIMING WAVEFORM (RESET Control)
VID
VIH
RESET
SA, A6
A1, A0
Valid*
Valid*
Sector Protect or Sector Unprotect
Data
60h
1us
60h
Valid*
Verify
40h
Status
Sector Protect =150us
Sector Unprotect =15ms
CE
WE
OE
Note: When sector protect, A6=0, A1=1, A0=0. When sector unprotect, A6=1, A1=1, A0=0.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
35
MX29LV800T/B
Figure 12. SECTOR PROTECT TIMING WAVEFORM(A9, OE Control)
A1
A6
12V
3V
A9
tVLHT
Verify
12V
3V
OE
tVLHT
tVLHT
tWPP 1
WE
tOESP
CE
Data
01H
F0H
tOE
A18-A12
Sector Address
P/N:PM0709
REV. 1.3, JAN. 24, 2002
36
MX29LV800T/B
Figure 13. SECTOR PROTECTION ALGORITHM (A9, OE Control)
START
Set Up Sector Addr
PLSCNT=1
OE=VID,A9=VID,CE=VIL
A6=VIL
Activate WE Pulse
Time Out 150us
Set WE=VIH, CE=OE=VIL
A9 should remain VID
Read from Sector
Addr=SA, A1=1
No
PLSCNT=32?
.
No
Data=01H?
Yes
Device Failed
Protect Another
Sector?
Yes
Remove VID from A9
Write Reset Command
Sector Protection
Complete
P/N:PM0709
REV. 1.3, JAN. 24, 2002
37
MX29LV800T/B
Figure 14. IN-SYSTEM SECTOR PROTECTION ALGORITHM WITH RESET=VID
START
PLSCNT=1
RESET=VID
Wait 1us
First Write
Cycle=60H
No
Temporary Sector
Unprotect Mode
Yes
Set up sector address
Write 60H to sector address
with A6=0, A1=1, A0=0
Wait 150us
Verify sector protect :
write 40H with A6=0,
A1=1, A0=0
Increment PLSCNT
Reset PLSCNT=1
Read from sector address
No
PLSCNT=25?
No
Data=01H ?
Yes
Device failed
Yes
Protect another
Yes
sector?
No
Remove VID from RESET
Write reset command
Sector protect complete
P/N:PM0709
REV. 1.3, JAN. 24, 2002
38
MX29LV800T/B
Figure 15. IN-SYSTEM SECTOR UNPROTECTION ALGORITHM WITH RESET=VID
START
PLSCNT=1
RESET=VID
Wait 1us
First Write
Cycle=60H ?
No
Temporary Sector
Unprotect Mode
Yes
All sector
protected?
No
Protect all sectors
Yes
Set up first sector address
Sector unprotect :
write 60H with
A6=1, A1=1, A0=0
Wait 50ms
Verify sector unprotect
write 40H to sector address
Increment PLSCNT
with A6=1, A1=1, A0=0
Read from sector address
with A6=1, A1=1, A0=0
No
PLSCNT=1000?
No
Yes
Device failed
Set up next sector address
Data=00H ?
Yes
Last sector
verified?
Yes
No
Remove VID from RESET
Write reset command
Sector unprotect complete
P/N:PM0709
REV. 1.3, JAN. 24, 2002
39
MX29LV800T/B
Figure 16. TIMING WAVEFORM FOR CHIP UNPROTECTION (A9, OE Control)
A1
12V
Vcc 3V
A9
tVLHT
A6
Verify
12V
Vcc 3V
OE
tVLHT
tVLHT
tWPP 2
WE
tOESP
CE
Data
00H
F0H
tOE
A18-A12
Sector Address
Notes: tVLHT (Voltage transition time)=4us min.
tWPP1 (Write pulse width for sector protect)=100ns min, 10us(Typ.)
tWPP2 (Write pulse width for sector unprotect)=100ns min, 12ms(Typ.)
tOESP (OE setup time to WE active)=4us min.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
40
MX29LV800T/B
Figure 17. CHIP UNPROTECTION ALGORITHM(A9, OE Control)
START
Protect All Sectors
PLSCNT=1
Set OE=A9=VID
CE=VIL,A6=1
Activate WE Pulse
Time Out 50ms
Increment
PLSCNT
Set OE=CE=VIL
A9=VID,A1=1
Set Up First Sector Addr
Read Data from Device
No
Data=00H?
Increment
Sector Addr
No
PLSCNT=1000?
Yes
Yes
No
All sectors have
been verified?
Device Failed
Yes
Remove VID from A9
Write Reset Command
Chip Unprotect
Complete
* It is recommended before unprotect whole chip, all sectors should be protected in advance.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
41
MX29LV800T/B
WRITE OPERATION STATUS
Figure 18. DATA POLLING ALGORITHM
Start
Read Q7~Q0
Add.=VA(1)
Yes
Q7 = Data ?
No
No
Q5 = 1 ?
Yes
Read Q7~Q0
Add.=VA
Yes
Q7 = Data ?
(2)
No
FAIL
Pass
NOTE : 1.VA=Valid address for programming
2.Q7 should be re-checked even Q5="1" because Q7 may change
simultaneously with Q5.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
42
MX29LV800T/B
Figure 19. TOGGLE BIT ALOGRITHM
Start
Read Q7-Q0
Read Q7-Q0
Toggle Bit Q6 =
Toggle ?
(Note 1)
NO
YES
NO
Q5= 1?
YES
Read Q7~Q0 Twice
Toggle bit Q6=
Toggle?
(Note 1,2)
NO
YES
Program/Erase Operation
Not Complete,Write
Reset Command
Program/Erase
operation Complete
Note:1.Read toggle bit twice to determine whether or not it is toggling.
2. Recheck toggle bit because it may stop toggling as Q5 change to "1".
P/N:PM0709
REV. 1.3, JAN. 24, 2002
43
MX29LV800T/B
Figure 20. Data Polling Timings (During Automatic Algorithms)
tRC
Address
VA
VA
VA
tACC
tCE
CE
tCH
tOE
OE
tOEH
tDF
WE
tOH
Q7
Complement
Complement
True
Valid Data
Q0-Q6
Status Data
Status Data
True
Valid Data
High Z
High Z
tBUSY
RY/BY
NOTES:
VA=Valid address. Figure shows are first status cycle after command sequence, last status read cycle, and array data read cycle.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
44
MX29LV800T/B
Figure 21. Toggle Bit Timings (During Automatic Algorithms)
tRC
VA
VA
Address
VA
VA
tACC
tCE
CE
tCH
tOE
OE
tDF
tOEH
WE
tOH
High Z
Q6/Q2
Valid Status
(first raed)
Valid Status
Valid Data
(second read)
(stops toggling)
Valid Data
tBUSY
RY/BY
NOTES:
VA=Valid address; not required for Q6. Figure shows first two status cycle after command sequence, last status read cycle, and
array data read cycle.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
45
MX29LV800T/B
Table 12. AC CHARACTERISTICS
Parameter Std
Description
Test Setup All Speed Options Unit
tREADY1
RESET PIN Low (During Automatic Algorithms)
MAX
20
us
MAX
500
ns
to Read or Write (See Note)
tREADY2
RESET PIN Low (NOT During Automatic
Algorithms) to Read or Write (See Note)
tRP
RESET Pulse Width (During Automatic Algorithms)
MIN
500
ns
tRH
RESET High Time Before Read(See Note)
MIN
50
ns
tRB
RY/BY Recovery Time(to CE, OE go low)
MIN
0
ns
Note:Not 100% tested
Figure 22. RESET TIMING WAVEFORM
RY/BY
CE, OE
tRH
RESET
tRP
tReady2
Reset Timing NOT during Automatic Algorithms
tReady1
RY/BY
tRB
CE, OE
RESET
tRP
Reset Timing during Automatic Algorithms
P/N:PM0709
REV. 1.3, JAN. 24, 2002
46
MX29LV800T/B
AC CHARACTERISTICS
WORD/BYTE CONFIGURATION (BYTE)
Parameter
JEDEC
Description
Speed Options
Std
-70
-90
Unit
-120
tELFL/tELFH
CE to BYTE Switching Low or High
Max
5
ns
tFLQZ
BYTE Switching Low to Output HIGH Z
Max
25
30
30
ns
tFHQV
BYTE Switching High to Output Active
Min
70
90
120
ns
Figure 23. BYTE TIMING WAVEFORM FOR READ OPERATIONS (BYTE switching from byte
mode to word mode)
CE
OE
tELFH
BYTE
Q0~Q14
DOUT
(Q0-Q7)
Q15/A-1
VA
DOUT
(Q0-Q14)
DOUT
(Q15)
tFHQV
P/N:PM0709
REV. 1.3, JAN. 24, 2002
47
MX29LV800T/B
Figure 24. BYTE TIMING WAVEFORM FOR READ OPERATIONS (BYTE switching from word
mode to byte mode)
CE
OE
tELFH
BYTE
DOUT
(Q0-Q14)
Q0~Q14
DOUT
(Q15)
Q15/A-1
DOUT
(Q0-Q7)
VA
tFLQZ
Figure 25. BYTE TIMING WAVEFORM FOR PROGRAM OPERATIONS
CE
The falling edge of the last WE signal
WE
BYTE
tAS
P/N:PM0709
tAH
REV. 1.3, JAN. 24, 2002
48
MX29LV800T/B
Table 13. TEMPORARY SECTOR UNPROTECT
Parameter Std.
Description
Test Setup
AllSpeed Options Unit
tVIDR
VID Rise and Fall Time (See Note)
Min
500
ns
tRSP
RESET Setup Time for Temporary Sector Unprotect
Min
4
us
Note:
Not 100% tested
FIgure 26. TEMPORARY SECTOR UNPROTECT TIMING DIAGRAM
12V
RESET
0 or Vcc
0 or Vcc
Program or Erase Command Sequence
tVIDR
tVIDR
CE
WE
tRSP
RY/BY
Figure 27. Q6 vs Q2 for Erase and Erase Suspend Operations
Enter Embedded
Erasing
Erase
Suspend
Enter Erase
Suspend Program
Erase
WE
Erase
Resume
Erase
Suspend
Program
Erase Suspend
Read
Erase
Erase
Complete
Q6
Q2
NOTES:
The system can use OE or CE to toggle Q2/Q6, Q2 toggles only when read at an address within an erase-suspended
P/N:PM0709
REV. 1.3, JAN. 24, 2002
49
MX29LV800T/B
Figure 28. TEMPORARY SECTOR UNPROTECT ALGORITHM
Start
RESET = VID (Note 1)
Perform Erase or Program Operation
Operation Completed
RESET = VIH
Temporary Sector Unprotect Completed(Note 2)
Note : 1. All protected sectors are temporary unprotected.
VID=11.5V~12.5V
2. All previously protected sectors are protected again.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
50
MX29LV800T/B
Figure 29. ID CODE READ TIMING WAVEFORM
VCC
3V
VID
VIH
ADD
A9
ADD
A0
VIL
VIH
VIL
tACC
tACC
VIH
A1
VIL
ADD
A2-A8
A10-A18
CE
VIH
VIL
VIH
VIL
WE
VIH
tCE
VIL
OE
VIH
tOE
VIL
tDF
tOH
tOH
VIH
DATA
Q0-Q15
DATA OUT
DATA OUT
VIL
DAH/5BH (Byte)
C2H/00C2H
22DAH/225BH (Word)
P/N:PM0709
REV. 1.3, JAN. 24, 2002
51
MX29LV800T/B
ERASE AND PROGRAMMING PERFORMANCE(1)
LIMITS
TYP.(2)
MAX.(3)
UNITS
Sector Erase Time
0.7
15
sec
Chip Erase Time
14
Byte Programming Time
9
300
us
Word Programming Time
11
360
us
Byte Mode
9
27
sec
Word Mode
5.8
17
sec
PARAMETER
Chip Programming Time
MIN.
Erase/Program Cycles
Note:
sec
100,000
Cycles
1.Not 100% Tested, Excludes external system level over head.
2.Typical values measured at 25°C, 3V.
3.Maximum values measured at 25°C, 2.7V.
LATCHUP CHARACTERISTICS
MIN.
MAX.
Input Voltage with respect to GND on all pins except I/O pins
-1.0V
12.5V
Input Voltage with respect to GND on all I/O pins
-1.0V
Vcc + 1.0V
-100mA
+100mA
Current
Includes all pins except Vcc. Test conditions: Vcc = 3.0V, one pin at a time.
P/N:PM0709
REV. 1.3, JAN. 24, 2002
52
MX29LV800T/B
ORDERING INFORMATION
PLASTIC PACKAGE
PART NO.
MX29LV800TMC-70
MX29LV800BMC-70
MX29LV800TMC-90
MX29LV800BMC-90
MX29LV800TTC-70
ACCESS TIME
(ns)
70
70
90
90
70
OPERATING CURRENT
MAX.(mA)
30
30
30
30
30
STANDBY CURRENT
MAX.(uA)
5
5
5
5
5
MX29LV800TTC-70R
70
30
5
MX29LV800BTC-70
70
30
5
MX29LV800BTC-70R
70
30
5
MX29LV800TTC-90
90
30
5
MX29LV800BTC-90
90
30
5
MX29LV800TXBC-70
MX29LV800TXBC-90
MX29LV800BXBC-70
MX29LV800BXBC-90
MX29LV800TXEC-70
MX29LV800TXEC-90
MX29LV800BXEC-70
MX29LV800BXEC-90
MX29LV800TMI-70
MX29LV800BMI-70
MX29LV800TMI-90
MX29LV800BMI-90
MX29LV800TTI-70
70
90
70
90
70
90
70
90
70
70
90
90
70
30
30
30
30
30
30
30
30
30
30
30
30
30
5
5
5
5
5
5
5
5
5
5
5
5
5
MX29LV800TTI-70R
70
30
5
MX29LV800BTI-70
70
30
5
MX29LV800BTI-70R
70
30
5
P/N:PM0709
PACKAGE
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Ball CSP
48 Ball CSP
48 Ball CSP
48 Ball CSP
48 Ball CSP
48 Ball CSP
48 Ball CSP
48 Ball CSP
44 Pin SOP
44 Pin SOP
44 Pin SOP
44 Pin SOP
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
REV. 1.3, JAN. 24, 2002
53
MX29LV800T/B
PART NO.
MX29LV800TTI-90
ACCESS TIME
(ns)
90
OPERATING CURRENT
MAX.(mA)
30
STANDBY CURRENT
MAX.(uA)
5
MX29LV800BTI-90
90
30
5
MX29LV800TXBI-70
MX29LV800TXBI-90
MX29LV800BXBI-70
MX29LV800BXBI-90
MX29LV800TXEI-70
MX29LV800TXEI-90
MX29LV800BXEI-70
MX29LV800BXEI-90
70
90
70
90
70
90
70
90
30
30
30
30
30
30
30
30
5
5
5
5
5
5
5
5
P/N:PM0709
PACKAGE
48 Pin TSOP
(Normal Type)
48 Pin TSOP
(Normal Type)
48 Ball CSP
48 Ball CSP
48 Ball CSP
48 Ball CSP
48 Ball CSP
48 Ball CSP
48 Ball CSP
48 Ball CSP
REV. 1.3, JAN. 24, 2002
54
MX29LV800T/B
PACKAGE INFORMATION
48-PIN PLASTIC TSOP
P/N:PM0709
REV. 1.3, JAN. 24, 2002
55
MX29LV800T/B
44-PIN PLASTIC SOP
P/N:PM0709
REV. 1.3, JAN. 24, 2002
56
MX29LV800T/B
48-Ball CSP (for MX29LV800TXBC/TXBI/BXBC/BXBI)
P/N:PM0709
REV. 1.3, JAN. 24, 2002
57
MX29LV800T/B
48-Ball CSP (for MX29LV800TXEC/TXEI/BXEC/BXEI)
P/N:PM0709
REV. 1.3, JAN. 24, 2002
58
MX29LV800T/B
REVISION HISTORY
Revision No. Description
1.0
Change heading as "PRELIMINARY"
Correct mis-typing
1.1
1.2
1.3
Changed tBUSY spec from 90us to 90ns
Correct mis-typing
tBUSY timing was changed from 90ns min. to 90ns max.
Add protection waveform and flowchart(A9, OE control)
Add BYTE timing waveform
1.Wording change of sector erase commands
2.Add the typical spec of tWPP1/tWPP2
Add MX29LV800TXEC & MX29LV800TXEI & MX29LV800BXEC
& MX29LV800BXEI in Ordering Information
Add 48-Ball CSP for MX29LV800TXEC/TXEI/BXEC/BXEI
P/N:PM0709
Page
Date
P1
JUL/31/2001
P10,19~22,24,
25,48
P24
P1,11,38,39, SEP/12/2001
44
P24
P36,37
P47,48
P11,13
NOV/23/2001
P24,40
P53,54
JAN/24/2002
P58
REV. 1.3, JAN. 24, 2002
59
MX29LV800T/B
MACRONIX INTERNATIONAL CO., LTD.
HEADQUARTERS:
TEL:+886-3-578-6688
FAX:+886-3-563-2888
EUROPE OFFICE:
TEL:+32-2-456-8020
FAX:+32-2-456-8021
JAPAN OFFICE:
TEL:+81-44-246-9100
FAX:+81-44-246-9105
SINGAPORE OFFICE:
TEL:+65-348-8385
FAX:+65-348-8096
TAIPEI OFFICE:
TEL:+886-2-2509-3300
FAX:+886-2-2509-2200
MACRONIX AMERICA, INC.
TEL:+1-408-453-8088
FAX:+1-408-453-8488
CHICAGO OFFICE:
TEL:+1-847-963-1900
FAX:+1-847-963-1909
http : //www.macronix.com
MACRONIX INTERNATIONAL CO., LTD. reserves the right to change product and specifications without notice.