BOARDCOM DEMO-MGA-645T6 Low noise amplifier with bypass/shutdown mode Datasheet

MGA-645T6
Low Noise Amplifier with Bypass/Shutdown Mode
in Low Profile Package
Data Sheet
Description
Features
Avago Technologies’ MGA-645T6 is an economical,
easy-to-use GaAs MMIC Low Noise Amplifier (LNA) with
Bypass/ Shutdown mode. The LNA has low noise and
high linearity achieved through the use of Avago Technologies’ proprietary 0.5um GaAs Enhancement-mode
pHEMT process. The Bypass/Shutdown mode enables
the LNA to be bypassed during high input signal power
and reduce current consumption. It is housed in a low
profile 2 x 1.3 x 0.4mm 6-pin Ultra Thin Package. The
compact footprint and low profile coupled with low
noise, high linearity make the MGA-645T6 an ideal choice
as a low noise amplifier for mobile receiver in the WiMax,
WLAN(802.11b/g), WiBro and DMB applications.
x 2.0 x 1.3 x 0.4 mm3 6-lead Ultra Thin Package
4FYM
x Low Noise Figure
x Bypass/Shutdown Mode using a single pin
x Low current consumption in Bypass Mode, <100uA
x Fully matched to 50 ohm in Bypass Mode
x High Linearity (LNA and Bypass Mode)
x 15 dB Gain
x 1.1 dB Noise Figure with 9dB Input Return Loss
x +7 dBm Input IP3
x -5 dBm Input Power at 1dB gain compression
Pin 6
(Not Used)
Pin 1
(Vbypass)
GND
x 4.5 dB Insertion Loss in Bypass Mode
x 16dBm IIP3 in Bypass Mode (Pin = -20dBm)
Pin 5
(RF_OUT)
x <100uA current consumption in Bypass & Shutdown
Mode
Pin 4
(VDD)
Pin 3
(GND)
Applications
Top View
x Low noise amplifier for GPS, WiMax, WLAN, WiBro and
DMB applications.
Simplified Schematic
MGA-645T6
L1
x Adjustable bias current
2.4 GHz; 3V, 7mA (typ):
Pin Configuration
RFin
x 1.5 GHz – 3 GHz operating range
Typical Performance
Note:
Package marking provides
orientation and identification
“4F” = Product Code
“Y” = Year of manufacture
“M” = Month of manufacture
.
Vbypass
x Simple matching network
x Low profile package
Component Image
Pin 2
(RF_IN)
x Low bias current
1
bias/control
x Other ultra low noise applications in the 1.5 – 3 GHz
band
6
2
5
3
4
L3
RFout
L2
Vdd
C1
C2
Attention: Observe precautions for handling
electrostatic sensitive devices.
ESD Machine Model = 60 V
ESD Human Body Model = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Absolute Maximum Rating [1] TA=25°C
Symbol
Parameter
Units
Absolute Max.
Vdd
Device Voltage
V
4
Vbypass
Control Voltage
V
(Vdd-0.3)
Pin,max
CW RF Input Power
dBm
+15
Pdiss
Total Power Dissipation [3]
mW
80
Tj
Junction Temperature
°C
150
TSTG
Storage Temperature
°C
-65 to 150
Thermal Resistance [2,3]
(Vdd = 3.0V, Id=7mA), θjc = 60 °C/W
Notes:
1. Operation of this device in excess of any of
these limits may cause permanent damage.
2. Thermal resistance measured using InfraRed Measurement Technique.
3. Board temperature TB is 25 °C , for TB >146
°C derate the device power at 14mW per °C
rise in Board (package belly) temperature.
Product Consistency Distribution Charts [4]
Figure 1. Gain @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,
LSL=13.5, Nominal=15.0, USL=16.5
Figure 3. Ids @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,
Nominal=7.0, USL=13.0
Figure 2. NF @ 2.4 GHz , Vd 3V; Vbypass 1.8 V,
Nominal=1.1, USL=1.5
Notes:
4. Distribution data sample size are 500 samples taken from 3 different wafers and 3 different lots. Future wafers allocated to this product may have
nominal values anywhere between the upper and lower limits.
Electrical Specifications[5,7]
TA = 25 °C, Vdd =3V, Vbypass = 1.8V, RF measurement at 2.4 GHz, measured on demo board (see Fig. 4) unless otherwise
specified.
Symbol
Parameter and Test Condition
Units
Min.
Typ.
Max.
Id
Bias Current
mA
-
7
13
Gain
Gain
dB
13.5
15
16.5
NF
Noise Figure (Typ.Vbypass=1.8V)
dB
-
1.1
1.5
IIP3 [6]
Input Third Order Intercept Point
dBm
-
+7
-
OP1dB
Output Power at 1dB Gain Compression
dBm
-
+9
-
S11
Input Return Loss, 50Ω source
dB
-
-9
-
S22
Output Return Loss, 50Ω load
dB
-
-15
-
S12
Reverse Isolation
dB
-
-27
-
|S21|2BYPASS
Bypass Mode Loss (Vbypass = 0)
dB
-
-4.5
-
IIP3BYPASS
Bypass Mode IIP3 (tested at -20dBm input Power)
dBm
-
16
-
IdBYPASS
Bypass Mode current
uA
-
80
-
Notes:
5. Measurements at 2.4GHz obtained using demo board described in Figure 1, with component values on Figure 2 (2.3 – 2.4 GHz)
6. 2.4GHz IIP3 test condition: FRF1 = 2.395 GHz, FRF2 = 2.4 GHz with input power of -30dBm per tone.
7. Use proper bias, heatsink and derating to ensure maximum channel temperature is not exceeded. See absolute maximum ratings and application
note for more details.
2
Demo Board Layout
*Application Notes: -
L3
C1
VBYPASS
L2
J2
J1
VDD
GROUND
L1
Copper foil
Id,mA
Figure 4. Demo Board Layout Diagram *
16
14
12
10
8
6
4
2
0
1
1.2
1.4
1.6
1.8
Figure 5. Id vs Vbypass (Vdd=3V)
3
2
2.2
Vsd,V
2.4
2.6
2.8
3
C2
1. Performance in a specified frequency band can be
optimized by changing component values in the
demoboard above to suit the application at that
frequency. The schematic on page 4 and 7 show
two sets of components used to demonstrate
performance at the (2.3 - 2.4) GHz Wibro band and
(2.5 - 2.7) GHz Wimax/DMB band.
2. Operational Logic of Bypass/Shutdown pin (Pin 1)
- Normal LNA operation : [1.2 to (Vdd-0.3)] Volt,
- Bypass/Shutdown mode : 0 Volt or Open
Pin 1 voltage in LNA mode can be varied to enable
the LNA bias current to be adjusted, refer to next
graph:
Demo Board Schematic for 2.3–2.4 GHz tuning
MGA-645T6
Vbypass
1
6
bias/control
2
RFin
L1
L3
5
3
RFout
L2
4
Vdd
C1
Part
Size
Value
P/N
L1
0402
2.7nH
LL1005FH2N7B (TOKO)
L2
0402
3.9nH
LL1005FH3N9C (TOKO)
L3
0402
4.7nH
LL1005FH4N7C (TOKO)
C1
0402
11pF
MCH155A110JK(ROHM)
C2
0402
0.1uF
CM05X7R104K10AHF
J1,J2[8]
0402
0 ohm
RK73Z1E000 (KOA)
Notes
8. Jumpers indicated in the demo board drawing are not
needed in actual application board; this is because
generic demo boards were used for development.
C2
Figure 6. Demo Board Schematic Diagram
MGA-645T6 Typical Performance (2.3 – 2.4 GHz match)
TA = +25 °C, Vdd = 3V, Ids = 7mA (Vbypass = 1.8V), RF measurement at 2.4 GHz, Input Signal=CW unless stated
otherwise.
20
Gain
10
Output Return Loss
0
Input Return Loss
-10
dB
-20
-30
Isolation
-40
-50
-60
1.0
1.5
2.0
2.5
3.0
3.5
freq, GHz
Figure 7. LNA Mode S21,S11,S22, S12 vs Frequency
4
4.0
4.5
5.0
5.5
6.0
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
18
16
14
Gain,dB
NF,dB
LNA Mode Plots (2.3 – 2.4 GHz match) ; Vdd = 3V
4mA
7mA
12mA
2
2.2
2.4
2.6
Freq,GHz
2.8
10
2
2.4
2.6
Freq,GHz
2.8
3
1.6
1.4
1.2
-40 DegC
25 DegC
85 DegC
1
0.8
0.6
-40 DegC
0.4
25 DegC
0.2
85 DegC
0
5
6
7
8
Id,mA
9
10
11
12
4
0
-40 DegC
25 DegC
85 DegC
-1
-2
IIP3,dBm
-3
-4
-5
-6
-7
5
6
7
8
Id,mA
9
Figure 12. LNA Mode IP1dB vs Id vs Temperature
5
6
7
8
Id,mA
9
10
11
12
Figure 11. LNA Noise Figure vs Id vs Temperature
Figure 10. LNA Mode Gain vs Id vs Temperature
IP1dB,dBm
2.2
Figure 9. LNA Mode Gain vs Frequency vs Id
NF,dB
Gain,dB
6
3
1.8
17
16.5
16
15.5
15
14.5
14
13.5
13
12.5
12
4
5
4mA
7mA
12mA
8
Figure 8. LNA Mode Noise Figure vs Frequency vs Id
4
12
10
11
12
9
8
7
6
5
4
3
2
1
0
-40 DegC
25 DegC
85 DegC
4
5
6
7
8
Id,mA
9
Figure 13. LNA Mode IIP3 vs Id vs Temperature
10
11
12
Bypass Mode Plots (2.3 – 2.4 GHz match) (Vdd = 3V ; Vbypass = 0V)
0
Input Return Loss
-5
-10
-15
Gain
dB
-20
Output Return Loss
Isolation
-25
-30
-35
-40
-45
1.0
1.5
2.0
2.5
3.0
3.5
freq, GHz
4.0
4.5
5.0
5.5
6.0
Figure 14. Bypass Mode S21, S11, S22, S12 vs Frequency
20
-4
-40 DegC
25 DegC
85 DegC
Loss,dB
-6
18
IIP3,dBm
-5
-7
14
-40 DegC
-9
12
25 DegC
-10
10
-8
85 DegC
-11
2
2.1
2.2
2.3
2.4 2.5 2.6
Freq,GHz
2.7
2.8
2.9
3
IIP3,dBm
18
16
14
12
10
8
6
4
2
0
-30
-25
-20
-15
-10
Pin,dBm
Figure 17. Bypass Mode IIP3 vs Input Power
-5
0
8
2
2.1
2.2
2.3
2.4
2.5 2.6
Freq,GHz
2.7
2.8
Figure 16. Bypass Mode IIP3 vs Frequency vs Temperature
Figure 15. Bypass Mode Loss vs Frequency vs Temperature
6
16
5
2.9
3
Demo Board Schematic for 2.5 – 2.7 GHz tuning
MGA-645T6
Vbypass
1
6
bias/control
2
RFin
L1
L3
5
3
RFout
L2
4
Vdd
C1
C2
Part
Size
Value
P/N
L1
0402
1.8nH
LL1005FH1N8B (TOKO)
L2
0402
3.9nH
LL1005FH3N9C (TOKO)
L3
0402
3.9nH
LL1005FH3N9C (TOKO)
C1
0402
11pF
MCH155A110JK(ROHM)
C2
0402
0.1uF
CM05X7R104K10AHF
J1,J2[9]
0402
0 ohm
RK73Z1E000 (KOA)
Notes:
9. Jumpers indicated in the demo board drawing are not
needed in actual application board; this is because
generic demo boards were used for development.
Figure 18. Demo Board Schematic Diagram
MGA-645T6 Typical Performance (2.5 GHz – 2.7 GHz match)
TA = +25 °C, Vdd = 3V, Ids = 7mA (Vbypass = 1.8V), RF measurement at 2.6 GHz, Input Signal=CW unless stated
otherwise.
20
Gain
10
Output Return Loss
0
-10
dB
Input Return Loss
-20
Isolation
-30
-40
-50
-60
1.0
1.5
2.0
2.5
3.0
3.5
freq, GHz
Figure 19. LNA Mode S21,S11,S22, S12 vs Frequency
7
4.0
4.5
5.0
5.5
6.0
2
1.8
18
1.6
1.4
1.2
16
14
1
0.8
0.6
0.4
Gain,dB
NF,dB
LNA Mode Plots (2.5 – 2.7 GHz match) ; Vdd = 3V
4mA
12
10
4mA
7mA
0.2
0
7mA
8
12mA
12mA
2
2.2
2.4
2.6
2.8
6
3
2
2.2
2.4
Freq,GHz
Figure 20. LNA Mode Noise Figure vs Frequency vs Id
17
1.6
15.5
1.4
15
14.5
1.2
NF,dB
Gain,dB
3
1.8
14
1
0.8
13.5
-40 DegC
0.6
13
12.5
25 DegC
0.4
85 DegC
4
5
6
7
8
Id,mA
9
10
11
-40 DegC
25 degC
85 degc
0.2
12
0
12
Figure 22. LNA Mode Gain vs Id vs Temperature
4
5
6
7
8
Id,mA
9
10
11
12
Figure 23. LNA Mode Noise Figure vs Id vs Temperature
0
9
-1
-40 DegC
8
25 DegC
7
85 DegC
6
IIP3,dBm
-2
IP1dB,dBm
2.8
Figure 21. LNA Mode Gain vs Frequency vs Id
16.5
16
-3
-4
5
4
3
-40 DegC
2
25 degC
-6
1
85 DegC
-7
0
-5
4
5
6
7
8
Id,mA
9
Figure 24. LNA Mode IP1dB vs Id vs Temperature
8
2.6
Freq,GHz
10
11
12
4
5
6
7
8
Id,mA
9
Figure 25. LNA Mode IIP3 vs Id vs Temperature
10
11
12
Bypass Mode Plots (2.5 – 2.7 GHz match) (Vdd=3V; Vbypass = 0V)
0
Input Return Loss
-5
Isolation
-10
-15
dB
Gain
Output Return Loss
-20
-25
-30
1.0
1.5
2.0
2.5
3.0
3.5
freq, GHz
4.0
4.5
5.0
5.5
6.0
-3
-3.5
-4
-4.5
-5
-5.5
-6
-6.5
-7
-7.5
-8
20
18
16
IIP3,dBm
Loss,dB
Figure 26. Bypass Mode S21, S11, S22, S12 vs Frequency
-40 DegC
25 DegC
85 DegC
25 DegC
10
85 DegC
8
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3
Freq,GHz
Figure 27. Bypass Mode Loss vs Frequency vs Temperature
14
12
10
8
6
4
2
0
-30
-25
-20
-15
-10
Pin,dBm
Figure 29. Bypass Mode IIP3 vs Input Power
-5
0
2
2.1
2.2
2.3
2.4
2.5
2.6
Freq,GHz
2.7
2.8
Figure 28. Bypass Mode IIP3 vs Frequency vs Temperature
16
IIP3,dBm
-40 DegC
12
6
2
9
14
5
2.9
3
Test Circuit For S and Noise parameter measurement[10]
Reference plane
MGA-645T6
Vbypass
RFin
1
6
bias/control
2
5
3
4
Part
Size
Value
P/N
L2
0402
3.9nH
LL1005FH3N9C (TOKO)
C1
0402
11pF
MCH155A110JK(ROHM)
C2
0402
0.1uF
CM05X7R104K10AHF
RFout
Note:
10. The measurement is calibrated up to the input (RFin)
and output (RFout) pin of the package
L2
Vdd
C1
C2
Figure 30. S parameter and Noise parameter test circuit in an automated measurement system
MGA-645T6 LNA Mode typical scattering parameters at 25C, Vdd = 3V ; Id = 7mA
Freq.
10
S11
S21
S12
S22
(GHz)
Mag
Ang
(dB)
Mag
Ang
(dB)
Mag
Ang
Mag
Ang
0.5
0.967
-24.335
7.88
2.4761
-75.33
-45.04
0.0056
-138.21
0.9085
-122.31
1
0.8861
-49.8342
13.58
4.7744
-171.657
-38.06
0.0125
128.9233
0.432
35.0635
1.5
0.8251
-69.8995
12.45
4.191
-157.794
-34.61
0.0186
156.2124
0.6571
85.1871
2
0.7269
-85.9353
11.73
3.8582
174.2387
-32.01
0.0251
132.069
0.6749
17.7274
2.1
0.7122
-88.7111
11.44
3.7313
171.389
-33.23
0.0218
130.7848
0.6811
10.4895
2.2
0.7006
-91.1084
11.21
3.6365
168.6844
-31.9
0.0254
128.8968
0.6819
4.1974
2.3
0.6845
-93.5463
11.01
3.5538
165.0165
-32.08
0.0249
127.6959
0.683
-2.0684
2.4
0.6713
-96.327
10.55
3.3705
161.92
-31.24
0.0274
127.563
0.6865
-7.48
2.5
0.6601
-98.4295
10.37
3.2988
161.3186
-31.4
0.0269
128.1856
0.691
-12.2626
2.6
0.6513
-100.828
10.23
3.246
159.714
-31.18
0.0276
130.7351
0.6867
-16.6168
2.7
0.6362
-102.875
9.99
3.1576
158.2845
-31.15
0.0277
128.1521
0.6901
-20.8737
2.8
0.6249
-105.268
9.53
2.9943
157.1203
-30.96
0.0283
124.8959
0.696
-24.8411
2.9
0.6152
-107.135
9.32
2.9234
156.0789
-31.7
0.026
132.4548
0.6926
-28.5477
3
0.6029
-108.961
8.95
2.8011
155.2783
-31.7
0.026
133.5121
0.6876
-32.1859
3.5
0.5491
-118.1
8.28
2.5942
151.9711
-30.49
0.0299
139.3989
0.6816
-49.8308
4
0.5013
-126.979
7.61
2.4026
146.6674
-30.2
0.0309
139.6368
0.6597
-70.0219
4.5
0.448
-136.942
6.63
2.1452
140.82
-29.55
0.0333
147.2432
0.6719
-93.7765
5
0.4005
-148.164
5.64
1.9149
135.5389
-29.82
0.0323
149.2084
0.6943
-118.882
5.5
0.3674
-160.461
4
1.5849
129.9475
-31.18
0.0276
154.87
0.7417
-139.598
6
0.3646
-175.708
2.14
1.279
125.6513
-30.75
0.029
162.4089
0.7978
-156.427
6.5
0.3856
169.0618
-0.11
0.9878
122.9896
-32.08
0.0249
166.7983
0.8348
-170.871
7
0.4261
155.8448
-2.91
0.7156
121.385
-35.97
0.0159
-177.345
0.8606
175.0569
7.5
0.4897
144.9997
-7.72
0.411
117.9594
-36.95
0.0142
-161.329
0.8771
157.9701
8
0.5128
139.1313
-20.71
0.0922
152.3853
-41.01
0.0089
-145.616
0.8565
136.2647
8.5
0.5981
138.3684
-8.88
0.3597
-97.8518
-36.89
0.0143
-61.0845
0.8059
106.3384
9
0.6552
135.8053
-1.62
0.8295
-110.242
-33.19
0.0219
-38.4428
0.7041
67.8904
9.5
0.6801
133.4826
1.94
1.2505
-124.174
-27.64
0.0415
-36.5714
0.5465
18.5069
10
0.6354
134.38
3.94
1.5743
-144.52
-25.9
0.0507
-72.2
0.3212
-48.88
MGA-645T6 LNA Mode typical noise parameters at 25 °C, Vdd = 3V ; Id = 7mA
11
Freq.(GHz)
Fmin (dB)
*opt Mag
*opt Ang
Rn/50
2
0.55
0.76
67.8
0.23
2.1
0.57
0.76
71.04
0.22
2.2
0.59
0.75
74.29
0.21
2.3
0.62
0.75
77.54
0.21
2.4
0.72
0.69
79.72
0.2
2.5
0.75
0.68
82.9
0.2
2.6
0.78
0.67
86.08
0.2
2.7
0.8
0.66
89.11
0.19
2.8
0.83
0.65
92.14
0.18
2.9
0.85
0.63
95.17
0.18
3
0.88
0.62
98.2
0.17
3.1
0.91
0.61
100.88
0.16
3.2
0.95
0.6
103.56
0.16
3.3
0.98
0.59
106.24
0.15
3.4
1.02
0.58
108.92
0.14
3.5
1.06
0.57
111.6
0.14
3.6
1.09
0.56
114.08
0.13
3.7
1.12
0.56
116.56
0.13
3.8
1.15
0.55
119.04
0.12
3.9
1.18
0.55
121.52
0.12
4
1.21
0.54
124
0.11
MGA-645T6 Bypass Mode typical scattering parameters at 25 qC, Vdd = 3V ; Vbypass = 0V
Freq.
12
S11
S21
S12
S22
(GHz)
Mag
Ang
(dB)
Mag
Ang
(dB)
Mag
Ang
Mag
Ang
0.5
0.95
-31.2
-11.77
0.258
127.45
-11.77
0.258
125.95
0.568
111.9
1
0.925
-48.1
-10.96
0.283
100.5
-10.96
0.283
99.5
0.613
75.4
1.5
0.9
-65
-10.23
0.308
73.55
-10.23
0.308
73.05
0.658
38.9
2
0.875
-81.9
-9.55
0.333
46.6
-9.55
0.333
46.6
0.703
2.4
2.1
0.87
-85.28
-9.42
0.338
41.21
-9.42
0.338
41.31
0.712
-4.9
2.2
0.855
-88.66
-9.29
0.343
36.12
-9.29
0.343
36.22
0.722
-11
2.3
0.849
-91.44
-9.22
0.346
31.43
-9.22
0.345
31.63
0.734
-16.8
2.4
0.842
-94.52
-9.12
0.35
26.94
-9.12
0.349
27.14
0.741
-21.9
2.5
0.838
-97.2
-9.07
0.352
22.55
-9.07
0.352
22.65
0.741
-26.6
2.6
0.831
-100.18
-9
0.355
18.56
-9
0.354
18.76
0.749
-30.8
2.7
0.829
-102.56
-9
0.355
14.67
-9
0.356
14.77
0.745
-35.1
2.8
0.83
-105.14
-8.92
0.358
10.88
-8.92
0.358
10.98
0.74
-39.1
2.9
0.829
-107.52
-8.9
0.359
7.19
-8.9
0.359
7.39
0.739
-43
3
0.829
-109.9
-8.85
0.361
3.6
-8.85
0.361
3.8
0.73
-46.9
3.5
0.838
-120.9
-8.85
0.361
-12.35
-8.85
0.36
-12.15
0.69
-67
4
0.825
-130.8
-9
0.355
-27
-9
0.354
-26.7
0.694
-88.3
4.5
0.82
-139.2
-9.37
0.34
-41.85
-9.37
0.339
-41.65
0.717
-108.6
5
0.826
-148.4
-10.01
0.316
-56.6
-10.01
0.316
-56.4
0.74
-127.5
5.5
0.827
-161.3
-10.81
0.288
-71.55
-10.81
0.288
-71.55
0.778
-142.8
6
0.83
-176.4
-12.08
0.249
-84.4
-12.08
0.249
-84.2
0.829
-150.8
6.5
0.878
166.8
-13.76
0.205
-99.65
-13.76
0.204
-99.35
0.873
-160.3
7
0.895
154.4
-16.65
0.147
-114.9
-16.65
0.147
-114.7
0.893
-169.8
7.5
0.912
147
-21.21
0.087
-127.95
-21.21
0.087
-127.65
0.913
178.1
8
0.898
144.4
-33.56
0.021
-120.9
-33.56
0.021
-120.5
0.928
161.9
8.5
0.938
148.4
-22.38
0.076
-26.95
-22.38
0.076
-26.85
0.811
137
9
0.995
150.9
-22.05
0.079
-74.8
-22.05
0.08
-74.6
0.563
130.3
9.5
0.992
148.2
-32.77
0.023
-4.05
-32.77
0.023
-3.85
0.6
124.7
10
0.887
136.8
-15.34
0.171
8.8
-15.34
0.171
9.2
0.621
108.3
Package Dimensions
PIN #1 INDICATOR
R 0.10
PIN #1 DOT BY MARKING
0.40 ± 0.05
0.15
2.00 ± 0.05
1.30 ± 0.05
1.10
0.50
4FYM
1.20
0.20
0.20
PCB Land Pattern
1.700
1.100
0.435
0.286
0.300
R0.100
0.350
1.300
0.350
Top Metal
Solder Mask Opening
0.230
0.332
0.310
Land Pattern With Via
1.960
1.700
0.435
1.700
0.435
0.260
0.510
0.260
0.500
0.500
0.230
0.310
Stencil Opening
Notes:
1. All dimension are in MM
2. Via hole is optional.
3. Recommend to use standard 4 mils Stencil thickness
13
0.230
Combined Land Pattern & Stencil Opening
0.260
0.286
Stencil Outline Drawing and Combined Land Pattern & Stencil Layout
Device Orientation
REEL
USER FEED DIRECTION
4FYM
CARRIER
TAPE
4FYM
4FYM
TOP VIEW
USER
FEED
DIRECTION
END VIEW
COVER TAPE
Tape Dimensions
‡ 1.50 ± 0.10
4.0 ± 0.10
2.00 ± 0.05
4.0 ± 0.10
1.75 ± 0.10
3.50 ± 0.05
8.00
+0.30/-0.10
0.20
0.20 ± 0.15
45° MAX.
45° MAX.
0.73 ± 0.05
2 17 ± 0 05
Part Number Ordering Information
Part #
Qty
Container
MGA-645T6-BLKG
100
Antistatic Bag
MGA-645T6-TR1G
3000
7” Reel
MGA-645T6-TR2G
10000
13” Reel
14
1 67 ± 0 05
Reel Dimensions - 7 Inch
6.25mm EMBOSSED LETTERS
LETTERING THICKNESS: 1.6mm
SLOT HOLE "a"
SEE DETAIL "X"
Ø178.0±0.5
SLOT HOLE "b"
FRONT
BACK
6
PS
SLOT HOLE(2x)
180° APART.
6
PS
RECYCLE LOGO
SLOT HOLE "a": 3.0±0.5mm(1x)
SLOT HOLE "b": 2.5±0.5mm(1x)
FRONT VIEW
7.9-10.9**
65°
45°
8.4
1.5 MIN.
+1.5*
-0.0
R5.2
Slot hole 'b'
FRONT
°
R10.65
120
+0.5
Ø13.0 -0.2
Ø20.2 MIN.
BACK
Slot hole 'a'
EMBOSSED RIBS
RAISED: 0.25mm, WIDTH: 1.25mm
BACK VIEW
15
Ø51.2±0.3
14.4*
MAX.
3.5
DETAIL "Y"
(Slot Hole)
1.0
60°
Ø55.0±0.5
Ø178.0±1.0
DETAIL "X"
Reel Dimensions - 13 Inch x 12mm
11
12 1
2
3
4
0 2
10
9
7
6
5
DATE CODE
12MM
8
EMBOSSED LETTERING
16.0mm HEIGHT x MIN. 0.4mm THICK.
Ø329.0±1.0
HUB
Ø100.0±0.5
6
PS
0 2
1112 1 2
3
10
4
9
8 7 6 5
MP
N
CPN
EMBOSSED LETTERING
7.5mm HEIGHT
EMBOSSED LETTERING
7.5mm HEIGHT
1.5
(MI
N.)
FRONT VIEW
EMBOSSED LINE (2x)
89.0mm LENGTH LINES 147.0mm
AWAY FROM CENTER POINT
+0.5
-0.2
20.2(MIN.)
Ø13.0
11.9-15.4**
+2.0*
12.4
-0.0
Ø16.0
ESD LOGO
6
PS
RECYCLE LOGO
Detail "X"
SEE DETAIL "X"
Ø100.0±0.5
Ø329.0±1.0
6
PS
R19.0±0.5
BACK VIEW
SLOT
5.0±0.5(3x)
Ø12.3±0.5(3x)
For product information and a complete list of distributors, please go to our web site:
18.4 MAX.*
www.avagotech.com
Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies in the United States and other countries.
Data subject to change. Copyright © 2005-2009 Avago Technologies. All rights reserved.
AV02-0006EN - November 11, 2009