Product Folder Sample & Buy Support & Community Tools & Software Technical Documents CSD13302W SLPS535 – MARCH 2015 CSD13302W 12 V N Channel NexFET™ Power MOSFET 1 Features • • • • • • • 1 Product Summary Ultra Low On Resistance Low Qg and Qgd Small Footprint 1 mm × 1 mm Low Profile 0.62 mm Height Pb Free RoHS Compliant Halogen Free TA = 25°C TYPICAL VALUE Drain-to-Source Voltage 12 V Qg Gate Charge Total (4.5 V) 6.0 nC Qgd Gate Charge Gate-to-Drain RDS(on) Drain-to-Source On-Resistance VGS(th) Threshold Voltage 2.1 nC VGS = 2.5 V 21.2 mΩ VGS = 4.5 V 14.6 mΩ 1.0 V Ordering Information(1) 2 Applications • • • UNIT VDS Battery Management Load Switch Battery Protection Device Qty Media Package Ship CSD13302W 3000 7-Inch Reel CSD13302WT 250 7-Inch Reel 1.0 mm × 1.0 mm Wafer Level Package Tape and Reel (1) For all available packages, see the orderable addendum at the end of the data sheet. 3 Description This 14.6 mΩ, 12 V, N-Channel device is designed to deliver the lowest on resistance and gate charge in a small 1 x 1 mm outline with excellent thermal characteristics and an ultra low profile. Top View Absolute Maximum Ratings TA = 25°C VALUE UNIT VDS Drain-to-Source Voltage 12 V VGS Gate-to-Source Voltage ±10 V ID Continuous Drain Current (1) 1.6 A IDM Pulsed Drain Current (2) 29 A PD Power Dissipation (3) 1.8 W TJ, Tstg Operating Junction and Storage Temperature Range –55 to 150 °C (1) Device Operating at a temperature of 105ºC (2) Min Cu Typ RθJA = 275ºC/W, Pulse width ≤100 μs, duty cycle ≤1% (3) Max Cu Typ RθJA = 70ºC/W RDS(on) vs VGS Gate Charge 5 TC = 25° C, I D = 1 A TC = 125° C, I D = 1 A 30 VGS - Gate-to-Source Voltage (V) RDS(on) - On-State Resistance (m:) 35 25 20 15 10 5 0 ID = 1 A VDS = 6 V 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1 2 3 4 5 6 VGS - Gate-To-Source Voltage (V) 7 8 D007 0 1 2 3 4 5 Qg - Gate Charge (nC) 6 7 D004 1 An IMPORTANT NOTICE at the end of this data sheet addresses availability, warranty, changes, use in safety-critical applications, intellectual property matters and other important disclaimers. PRODUCTION DATA. CSD13302W SLPS535 – MARCH 2015 www.ti.com Table of Contents 1 2 3 4 5 Features .................................................................. Applications ........................................................... Description ............................................................. Revision History..................................................... Specifications......................................................... 1 1 1 2 3 6 Device and Documentation Support.................... 7 6.1 Trademarks ............................................................... 7 6.2 Electrostatic Discharge Caution ................................ 7 6.3 Glossary .................................................................... 7 7 5.1 Electrical Characteristics........................................... 3 5.2 Thermal Information .................................................. 3 5.3 Typical MOSFET Characteristics.............................. 4 Mechanical, Packaging, and Orderable Information ............................................................. 8 7.1 CSD13302W Package Dimensions .......................... 8 7.2 Tape and Reel Information ....................................... 9 4 Revision History 2 DATE REVISION NOTES March 2015 * Initial release. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD13302W CSD13302W www.ti.com SLPS535 – MARCH 2015 5 Specifications 5.1 Electrical Characteristics (TA = 25°C) PARAMETER TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS BVDSS Drain-to-Source Voltage VGS = 0 , ID = 250 μA IDSS Drain-to-Source Leakage Current VGS = 0 V, VDS = 9.6 V 1 μA IGSS Gate-to-Source Leakage Current VDS = 0 V, VGS = 10 V 100 nA VGS(th) Gate-to-Source Threshold Voltage VDS = VGS, ID = 250 μA V RDS(on) Drain-to-Source On-Resistance gƒs Transconductance 12 V 1.0 1.3 VGS = 2.5 V, ID = 1 A 0.7 21.2 25.8 VGS = 4.5 V, ID = 1 A 14.6 17.1 VDS = 1.2 V, ID = 1 A 10 mΩ S DYNAMIC CHARACTERISTICS CISS Input Capacitance COSS Output Capacitance 663 862 pF 211 274 pF CRSS Rg Reverse Transfer Capacitance 151 196 pF Series Gate Resistance 3.6 7.2 Ω Qg Gate Charge Total (4.5 V) 6.0 7.8 nC Qgd Gate Charge Gate-to-Drain Qgs Gate Charge Gate-to-Source Qg(th) Gate Charge at Vth QOSS Output Charge td(on) Turn On Delay Time tr Rise Time td(off) Turn Off Delay Time tƒ Fall Time VGS = 0 V, VDS = 6 V, ƒ = 1 MHz VDS = 6 V, ID = 1 A VDS = 6 V, VGS = 0 V VDS = 6 V, VGS = 4.5 V, ID = 1 A RG = 0 Ω 2.1 nC 0.7 nC 0.7 nC 1.3 nC 6 ns 7 ns 17 ns 7 ns DIODE CHARACTERISTICS VSD Diode Forward Voltage IS = 1 A, VGS = 0 V Qrr Reverse Recovery Charge trr Reverse Recovery Time 0.7 VDS= 6 V, IS = 1 A, di/dt = 200 A/μs 1.0 V 11.6 nC 19.6 ns 5.2 Thermal Information (TA = 25°C unless otherwise stated) THERMAL METRIC RθJA (1) (2) MIN TYP Junction-to-Ambient Thermal Resistance (1) 275 Junction-to-Ambient Thermal Resistance (2) 70 MAX UNIT °C/W Device mounted on FR4 material with minimum Cu mounting area. Device mounted on FR4 material with 1 inch2 (6.45 cm2), 2 oz. (0.071 mm thick) Cu. P-Chan 1.0x1.0 CSP TTA MAX Rev1 P-Chan 1.0x1.0 CSP TTA MIN Rev1 Typical RθJA = 275°C/W when mounted on minimum pad area of 2 oz. Cu. Typical RθJA = 70°C/W when mounted on 1 inch2 of 2 oz. Cu. M0149-01 M0150-01 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD13302W 3 CSD13302W SLPS535 – MARCH 2015 www.ti.com 5.3 Typical MOSFET Characteristics (TA = 25°C unless otherwise stated) Figure 1. Transient Thermal Impedance 4 Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD13302W CSD13302W www.ti.com SLPS535 – MARCH 2015 Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 60 18 IDS - Drain-To-Source Current (A) IDS - Drain-to-Source Current (A) 20 16 14 12 10 8 6 4 VGS = 2.5 V VGS = 3.5 V VGS = 4.5 V 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 VDS - Drain-to-Source Voltage (V) 0.7 TC = 125° C TC = 25° C TC = -55° C 50 40 30 20 10 0 0.6 0.8 1 1.4 1.8 2.2 2.6 VGS - Gate-To-Source Voltage (V) D002 3 D003 VDS = 5 V Figure 2. Saturation Characteristics Figure 3. Transfer Characteristics 10000 Ciss = Cgd + Cgs Coss = Cds + Cgd Crss = Cgd 4 C - Capacitance (pF) VGS - Gate-to-Source Voltage (V) 5 4.5 3.5 3 2.5 2 1.5 1000 100 1 0.5 0 10 0 1 2 ID = 1 A 3 4 5 Qg - Gate Charge (nC) 6 7 0 2 D004 4 6 8 10 VDS - Drain-to-Source Voltage (V) 12 D005 VDS = 6 V Figure 4. Gate Charge Figure 5. Capacitance 35 RDS(on) - On-State Resistance (m:) 1.4 VGS(th) - Threshold Voltage (V) 1.3 1.2 1.1 1 0.9 0.8 0.7 0.6 0.5 -75 TC = 25° C, I D = 1 A TC = 125° C, I D = 1 A 30 25 20 15 10 5 0 -50 -25 0 25 50 75 100 TC - Case Temperature (qC) 125 150 175 0 1 D006 2 3 4 5 6 VGS - Gate-To-Source Voltage (V) 7 8 D007 ID = 250 µA Figure 6. Threshold Voltage vs Temperature Figure 7. On-State Resistance vs Gate-to-Source Voltage Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD13302W 5 CSD13302W SLPS535 – MARCH 2015 www.ti.com Typical MOSFET Characteristics (continued) (TA = 25°C unless otherwise stated) 10 1.3 VGS = 2.5 V VGS = 4.5 V 1.2 1.1 1 0.9 0.8 0.7 -75 TC = 25qC TC = 125qC ISD - Source-To-Drain Current (A) Normalized On-State Resistance 1.4 1 0.1 0.01 0.001 0.0001 -50 -25 0 25 50 75 100 TC - Case Temperature (qC) 125 150 0 175 0.2 0.4 0.6 0.8 VSD - Source-To-Drain Voltage (V) D008 1 D009 ID = 1 A Figure 9. Typical Diode Forward Voltage Figure 8. Normalized On-State Resistance vs Temperature 4.5 IDS - Drain-to-Source Current (A) IDS - Drain-To-Source Current (A) 100 10 1 100 ms 10 ms 0.1 0.1 1 ms 100 µs 10 µs 1 10 VDS - Drain-To-Source Voltage (V) 50 4 3.5 3 2.5 2 1.5 1 0.5 0 -45 -20 D010 5 30 55 80 105 130 TC - Case Temperature (qC) 155 180 D011 Single Pulse, Max RθJA = 275°C/W Figure 10. Maximum Safe Operating Area 6 Figure 11. Maximum Drain Current vs Temperature Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD13302W CSD13302W www.ti.com SLPS535 – MARCH 2015 6 Device and Documentation Support 6.1 Trademarks NexFET is a trademark of Texas Instruments. All other trademarks are the property of their respective owners. 6.2 Electrostatic Discharge Caution These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. 6.3 Glossary SLYZ022 — TI Glossary. This glossary lists and explains terms, acronyms, and definitions. Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD13302W 7 CSD13302W SLPS535 – MARCH 2015 www.ti.com 7 Mechanical, Packaging, and Orderable Information The following pages include mechanical, packaging, and orderable information. This information is the most current data available for the designated devices. This data is subject to change without notice and revision of this document. For browser-based versions of this data sheet, refer to the left-hand navigation. 7.1 CSD13302W Package Dimensions Pin 1 Mark 1 Solder Ball Ø 0.31 ±0.075 2 2 1 A 1.00 0.50 +0.00 –0.10 A B B 1.00 +0.00 –0.10 0.50 Side View Bottom View 0.04 0.62 Max 0.38 Top View 0.62 Max Seating Plate Front View M0151-01 NOTE: All dimensions are in mm (unless otherwise specified) Pin Configuration Table 8 POSITION DESIGNATION A2 Source A1 Gate B1, B2 Drain Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD13302W CSD13302W www.ti.com SLPS535 – MARCH 2015 Land Pattern Recommendation Ø 0.25 1 2 0.50 A B 0.50 M0152-01 NOTE: All dimensions are in mm (unless otherwise specified) 7.2 Tape and Reel Information 4.00 ±0.10 Ø 1.50 ±0.10 4.00 ±0.10 Ø 0.50 ±0.05 0.78 ±0.05 1.18 ±0.05 5° Max 3.50 ±0.05 8.00 +0.30 –0.10 1.75 ±0.10 2.00 ±0.05 0.254 ±0.02 1.18 ±0.05 5° Max M0153-01 NOTE: All dimensions are in mm (unless otherwise specified space Submit Documentation Feedback Copyright © 2015, Texas Instruments Incorporated Product Folder Links: CSD13302W 9 PACKAGE OPTION ADDENDUM www.ti.com 19-Mar-2015 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking (4/5) CSD13302W ACTIVE DSBGA YZB 4 3000 Green (RoHS & no Sb/Br) Call TI | SNAGCU Level-1-260C-UNLIM 302 CSD13302WT ACTIVE DSBGA YZB 4 250 Green (RoHS & no Sb/Br) Call TI | SNAGCU Level-1-260C-UNLIM 302 (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. (5) Multiple Device Markings will be inside parentheses. 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TI has taken and continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals. TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 19-Mar-2015 In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis. Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2015 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) CSD13302W DSBGA YZB 4 3000 178.0 8.4 B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant 1.07 1.07 0.74 4.0 8.0 Q1 CSD13302W DSBGA YZB 4 3000 180.0 8.4 1.06 1.06 0.69 4.0 8.0 Q1 CSD13302WT DSBGA YZB 4 250 178.0 8.4 1.07 1.07 0.74 4.0 8.0 Q1 CSD13302WT DSBGA YZB 4 250 180.0 8.4 1.06 1.06 0.69 4.0 8.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 23-Sep-2015 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) CSD13302W DSBGA YZB 4 3000 220.0 220.0 35.0 CSD13302W DSBGA YZB 4 3000 182.0 182.0 20.0 CSD13302WT DSBGA YZB 4 250 220.0 220.0 35.0 CSD13302WT DSBGA YZB 4 250 182.0 182.0 20.0 Pack Materials-Page 2 D: Max = 0.99 mm, Min = 0.93 mm E: Max = 0.99 mm, Min = 0.93 mm IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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