LM4050QML www.ti.com SNVS627G – JUNE 2010 – REVISED JULY 2013 LM4050QML Precision Micropower Shunt Voltage Reference Check for Samples: LM4050QML FEATURES APPLICATIONS • • • • • • • • • • 1 2 Low Dose Rate Qualified 100 krad(Si) SEFI Immune SET Immune with 60μF CLOAD CLOAD 0μF to 100μF Fixed Reverse Breakdown Voltage of 2.500V, 5.000V Control Systems Data Acquisition Systems Instrumentation Process Control Energy Management DESCRIPTION KEY SPECIFICATIONS • • LM4050-2.5QML – Output Voltage Tolerance IR = 100μA ±0.1% @ 25°C – Low Temperature Coefficient 15 ppm/°C – Low Output Noise 50 μVrms(typ) – Wide Operating Current Range 60 μA to 15 mA LM4050-5.0QML – Output Voltage Tolerance IR = 100μA ±0.1% @ 25°C – Low Temperature Coefficient 23 ppm/°C – Low Output Noise 100 μVrms(typ) – Wide Operating Current Range 74 μA to 15 mA The LM4050QML precision voltage reference is available in a 10-Lead Ceramic CLGA package. The LM4050QML's design eliminates the need for an external stabilizing capacitor while ensuring stability with a capacitive load, thus making the LM4050QML easy to use. The LM4050-2.5QML has a 60 μA minimum and 15 mA maximum operating current. The LM4050-5.0QML has a 74 μA minimum and 15 mA maximum operating current. The LM4050QML utilizes fuse and zener-zap reverse breakdown voltage trim during wafer sort to ensure that the prime parts have an accuracy of better than ±0.1% at 25°C. Bandgap reference temperature drift curvature correction and low dynamic impedance ensure stable reverse breakdown voltage accuracy over a wide range of operating temperatures and currents. The LM4050QML operates over the temperature range of -55°C to +125°C. Connection Diagram GND or N/C 1 10 GND or N/C 2 9 GND or N/C GND or N/C 3 8 GND or N/C GND or N/C 4 7 GND or N/C GND 5 6 GND or N/C VREF Figure 1. 10-Lead Ceramic CFP, Top View See NAC0010A Package 1 2 Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. All trademarks are the property of their respective owners. PRODUCTION DATA information is current as of publication date. Products conform to specifications per the terms of the Texas Instruments standard warranty. Production processing does not necessarily include testing of all parameters. Copyright © 2010–2013, Texas Instruments Incorporated LM4050QML SNVS627G – JUNE 2010 – REVISED JULY 2013 www.ti.com PIN DESCRIPTIONS Pin Number Pin Name Function 1 GND/NC Ground or No Connect 2 GND/NC Ground or No Connect 3 GND/NC Ground or No Connect 4 GND/NC Ground or No Connect 5 GND Ground 6 GND/NC Ground or No Connect 7 GND/NC Ground or No Connect 8 GND/NC Ground or No Connect 9 GND/NC Ground or No Connect 10 VREF Reference Voltage These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates. Absolute Maximum Ratings (1) Reverse Current 20 mA Forward Current 10 mA Power Dissipation (TA = 25°C) Lead Temperature (2) CLGA Package (Soldering, 10 seconds) 467 mW CLGA Package 260°C Storage Temperature -65°C to +150°C Package Weight (typical) ESD Tolerance (1) (2) (3) CLGA Package 241mg (3) Class 2 (2000V) Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not ensure specific performance limits. For ensured specifications and test conditions, see the Electrical Characteristics. The ensured specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax − TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower. For the LM4050QML, TJmax = 125°C, and the typical thermal resistance (θJA), when board mounted, is 214°C/W for the 10-Lead Ceramic CLGA package. The human body model is a 100 pF capacitor discharged through a 1.5 kΩ resistor into each pin. Operating Ratings (1) -55°C ≤ TA ≤ +125°C Temperature Range Reverse Current (1) LM4050-2.5QML 60 μA to 15 mA LM4050-5.0QML 74 μA to 15 mA The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax − TA)/θJA or the number given in the Absolute Maximum Ratings, whichever is lower. For the LM4050QML, TJmax = 125°C, and the typical thermal resistance (θJA), when board mounted, is 214°C/W for the 10-Lead Ceramic CLGA package. Package Thermal Resistance 2 Package θJA (Still Air) θJA (500LF/Min Air flow) θJC CLGA Package on 2 layer, 1oz PCB 214°C/ W 147°C/ W 20.87°C/ W Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML LM4050QML www.ti.com SNVS627G – JUNE 2010 – REVISED JULY 2013 Quality Conformance Inspection MIL-STD-883, Method 5005 - Group A Subgroup Description Temp ( C) 1 Static tests at +25 2 Static tests at +125 3 Static tests at -55 4 Dynamic tests at +25 5 Dynamic tests at +125 6 Dynamic tests at -55 7 Functional tests at +25 8A Functional tests at +125 8B Functional tests at -55 9 Switching tests at +25 10 Switching tests at +125 11 Switching tests at -55 12 Setting time at +25 13 Setting time at +125 14 Setting time at -55 LM4050-2.5QML Electrical Characteristics SMD: 5962R0923561 The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Symbol Parameter Conditions Reverse Breakdown Voltage IR = 100 μA Notes Typical (1) IRMIN (1) Reverse Breakdown Voltage Tolerance Max 2.500 IR = 60µA VR Min Subgroups V ±2.5 IR = 100μA ±2.5 IR = 1mA ±3.75 IR = 10mA ±10 IR = 15mA ±13 IR = 60µA ±5 mV 1 mV 2 mV 3 60 μA 1 65 μA 2, 3 IR = 100μA ±5 IR = 1mA ±6.25 IR = 10mA ±12.5 IR = 15mA ±14 IR = 60µA ±4.5 IR = 100μA ±4.5 IR = 1mA ±5.75 IR = 10mA ±13 IR = 15mA ±17.5 40.5 Minimum Operating Current Units Typicals are at TA = 25°C and represent most likely parametric norm. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML 3 LM4050QML SNVS627G – JUNE 2010 – REVISED JULY 2013 www.ti.com LM4050-2.5QML Electrical Characteristics SMD: 5962R0923561 (continued) The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Symbol Conditions IR = 60µA ±3 ±15 Average Reverse Breakdown Voltage Temperature Coefficient @ 25°C ≤ TA ≤ 125°C IR = 100μA ±3 ±16 ±3 ±18 IR = 10mA ±4 ±20 IR = 15mA ±6 ±22 IR = 60µA ±3 ±18 IR = 1mA ΔVR/ΔT Average Reverse Breakdown Voltage Temperature Coefficient @ −55°C ≤ TA ≤ 25°C Notes Typical (1) Parameter See (2) IR = 100μA ±3 ±19 ±22 IR = 10mA ±10 ±32 IR = 15mA ±15 ±45 See (2) IR = 1 mA, f = 120 Hz, IAC = 0.1 IR 3 μVpp CLOAD Load Capacitor Stable Over Temperature See (3) 60 VHYST Thermal Hysteresis ΔT = −55°C to 125°C See (4) 1 10 Hz ≤ f ≤ 10KHz ppm/°C 9 Output Noise Voltage Subgroups 2 Ω VN 0.1 Hz ≤ f ≤ 10 Hz Units 0.3 Reverse Dynamic Impedance (4) Max ±3.5 IR = 1mA ZR (2) (3) Min μVrms 50 0 100 µF ppm Not tested post irradiation. Typical post irradiation values listed in the post radiation Tempco table. Capacitive load not required but improves SET stability. This parameter is ensured by design and/or characterization and is not tested in production. Thermal hysteresis is defined as the change in voltage measured at +25°C after cycling to temperature -55°C and the 25°C measurement after cycling to temperature +125°C. lVR1 - VR2l VHYST = x 106 ppm VR Where: VHYST = Thermal hysteresis expressed in ppm VR = Nominal preset output voltage VR1 = VR before temperature fluctuation VR2 = VR after temperature fluctuation. Post Radiation @ 25°C (1) The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Qualification is performed with a 1.5X overtest. See for TOTAL IONIZING DOSE details. Symbol Parameter Conditions 30 krad 50 krad 100 krad Subgroups +0.42% +0.67% +1.75% 1 IR = 60μA IR= 100μA Reverse Breakdown Voltage Tolerance VR IR = 1mA Max IR = 10mA IR = 15mA (1) Pre and post irradiation limits are identical to those listed under electrical characteristics except as listed in the post radiation table. Post Radiation Tempco (1) Symbol ΔVR/ΔT (1) 4 Parameter Conditions Average Reverse Breakdown Voltage Temperature Coefficient Drift @ 25°C ≤ TA ≤ 125°C Average Reverse Breakdown Voltage Temperature Coefficient Drift @ −55°C ≤ TA ≤ 25°C TYPICALS 30 krad 50 krad 100 krad Units 60μA ≤ IR ≤ 15mA +41 +83 +144 ppm/°C 60μA ≤ IR ≤ 15mA +46 +87 +166 ppm/°C Not tested post irradiation. Typical post irradiation values listed in the post radiation Tempco table. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML LM4050QML www.ti.com SNVS627G – JUNE 2010 – REVISED JULY 2013 Operational Life Test Delta Parameters This table represents the drift seen from initial measurements post 1000hr Operational Life Burn-In. All units will remain within the electrical characteristics limits post 1000hr Operational Life Burn-In. Deltas required for QMLV product at Group B, SubGroup 5. Symbol VR IRMIN Parameter Reverse Breakdonwn Voltage Tolerance Conditions Min Max IR = 60µA Note -0.873 0.873 IR = 100µA -0.873 0.873 IR = 1mA -0.998 0.998 IR = 10mA -3.93 3.93 IR = 15mA -5 5 -0.623 0.623 Minimum Operating Current Units Temp mV 1 µA 1 Units Subgroups LM4050-5.0QML Electrical Characteristics SMD: 5962R0923562 The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Symbol VR IRMIN Parameter Conditions Reverse Breakdown Voltage IR = 100 μA Reverse Breakdown Voltage Tolerance Notes IR = 100μA ±5.0 IR = 1mA ±8 IR = 10mA ±18 IR = 15mA ±20 IR = 74µA ±10 IR = 100μA ±10 IR = 1mA ±12 IR = 10mA ±22.5 IR = 15mA ±28 IR = 74µA ±9 IR = 100μA ±9 IR = 1mA ±11.5 IR = 10mA ±29 IR = 15mA ±37 IR = 100μA Average Reverse Breakdown Voltage Temperature Coefficient @ −55°C ≤ TA ≤ 25°C (1) (2) Output Noise Voltage mV 3 1 2, 3 ±9 ±23 ±28 ±11 ±35 IR = 15mA ±11 ±40 IR = 74µA ±10 ±25 ±10 ±29 ±10 ±34 IR = 10mA ±15 ±45 IR = 15mA ±20 ±60 See (2) 2 μA IR = 10mA IR = 1mA mV μA ±25 IR = 100μA 1 74 ±9 See (2) mV 70 ±10 IR = 1mA ΔVR/ΔT VN V ±5.0 53 Average Reverse Breakdown Voltage Temperature Coefficient @ 25°C ≤ TA ≤ 125°C Max 5.000 IR = 74µA Reverse Dynamic Impedance Min IR = 74µA Minimum Operating Current ZR Typical (1) 2 ppm/°C 3 IR = 1 mA, f = 120 Hz, IAC = 0.1 IR 0.5 Ω 10 Hz ≤ f ≤ 10KHz 100 μVrms Typicals are at TA = 25°C and represent most likely parametric norm. Not tested post irradiation. Typical post irradiation values listed in the post radiation Tempco table. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML 5 LM4050QML SNVS627G – JUNE 2010 – REVISED JULY 2013 www.ti.com LM4050-5.0QML Electrical Characteristics SMD: 5962R0923562 (continued) The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Symbol Parameter Conditions Notes Typical (1) Min Max CLOAD Load Capacitor Stable Over Temperature See (3) 60 0 100 VHYST Thermal Hysteresis ΔT = -55°C to 125°C See (4) 20 (3) (4) Units Subgroups µF ppm Capacitive load not required but improves SET stability. This parameter is ensured by design and/or characterization and is not tested in production. Thermal hysteresis is defined as the change in voltage measured at +25°C after cycling to temperature -55°C and the 25°C measurement after cycling to temperature +125°C. lVR1 - VR2l VHYST = x 106 ppm VR Where: VHYST = Thermal hysteresis expressed in ppm VR = Nominal preset output voltage VR1 = VR before temperature fluctuation VR2 = VR after temperature fluctuation. Post Radiation @ 25°C (1) The initial Reverse Breakdown Voltage tolerance is ±0.1% @ 100μA. Qualification is performed with a 1.5X overtest. See for TOTAL IONIZING DOSE details. Symbol Parameter Conditions 30 krad 50 krad 100 krad Subgroups +0.42% +0.67% +1.75% 1 IR = 74μA IR= 100μA Reverse Breakdown Voltage Tolerance VR IR = 1mA Max IR = 10mA IR = 15mA (1) Pre and post irradiation limits are identical to those listed under electrical characteristics except as listed in the post radiation table. Post Radiation Tempco (1) Symbol ΔVR/ΔT (1) Parameter Conditions Average Reverse Breakdown Voltage Temperature Coefficient Drift @ 25°C ≤ TA ≤ 125°C Average Reverse Breakdown Voltage Temperature Coefficient Drift @ −55°C ≤ TA ≤ 25°C TYPICALS 30 krad 50 krad 100 krad Units 74μA ≤ IR ≤ 15mA +87 +166 +387 ppm/°C 74μA ≤ IR ≤ 15mA +96 +162 +343 ppm/°C Not tested post irradiation. Typical post irradiation values listed in the post radiation Tempco table. Operational Life Test Delta Parameters This table represents the drift seen from initial measurements post 1000hr Operational Life Burn-In. All units will remain within the electrical characteristics limits post 1000hr Operational Life Burn-In. Deltas required for QMLV product at Group B, SubGroup 5. Symbol Parameter Conditions IR = 74µA Reverse Breakdonwn Voltage Tolerance VR IRMIN 6 Minimum Operating Current Note Min Max −0.8 0.8 IR = 100µA −0.8 0.8 IR = 1mA −0.84 0.84 IR = 10mA −1.6 1.6 IR = 15mA −2.6 2.6 −0.623 0.623 Submit Documentation Feedback Units Temp mV 1 µA 1 Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML LM4050QML www.ti.com SNVS627G – JUNE 2010 – REVISED JULY 2013 Typical Performance Characteristics Output Impedance vs Frequency Figure 2. Figure 3. Reverse Characteristics and Minimum Operating Current 2.5V Thermal Hysteresis REVERSE CURRENT (µA) 100 5V 2.5V 110 10V Output Impedance vs Frequency 90 80 70 60 50 40 30 20 10 0 0 1 2 3 4 5 6 7 8 9 10 REVERSE VOLTAGE (V) Figure 4. Figure 5. 5.0V Thermal Hysteresis Figure 6. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML 7 LM4050QML SNVS627G – JUNE 2010 – REVISED JULY 2013 www.ti.com Typical Radiation Characteristics 2.5V Low Dose Rate Drift at 10 mrad(Si)/s 5V Low Dose Rate Drift at 10 mrad(Si)/s 1.75 1.50 VR DRIFT (%) 1.25 Low Dose Rate Unbiased 1.00 0.75 0.50 0.25 Low Dose Rate Biased 0.00 0 25 50 75 100 125 150 DOSE (krad) Figure 7. 8 Figure 8. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML LM4050QML www.ti.com SNVS627G – JUNE 2010 – REVISED JULY 2013 Start-Up Characteristics LM4050-2.5QML RS = 30k RS Test Circuit LM4050QML Figure 9. Figure 10. LM4050-5.0QML RS = 30k Figure 11. Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML 9 LM4050QML SNVS627G – JUNE 2010 – REVISED JULY 2013 www.ti.com Functional Block Diagram APPLICATIONS INFORMATION The LM4050QML is a precision micro-power curvature-corrected bandgap shunt voltage reference. The LM4050QML is available in the 10-Lead Ceramic CLGA package. The LM4050QML has been designed for stable operation without the need of an external capacitor connected between the “+” pin and the “−” pin. If, however, a bypass capacitor is used, the LM4050QML remains stable. The LM4050-2.5QML has a 60 μA minimum and 15 mA maximum operating current. The LM4050-5.0QML has a 74 μA minimum and 15 mA maximum operating current. The typical thermal hysteresis specification is defined as the change in +25°C voltage measured after thermal cycling. The device is thermal cycled to temperature -55°C and then measured at 25°C. Next the device is thermal cycled to temperature +125°C and again measured at 25°C. The resulting VOUT delta shift between the 25°C measurements is thermal hysteresis. Thermal hysteresis is common in precision references and is induced by thermal-mechanical package stress. Changes in environmental storage temperature, operating temperature and board mounting temperature are all factors that can contribute to thermal hysteresis. In a conventional shunt regulator application (Figure 12) , an external series resistor (RS) is connected between the supply voltage and the LM4050QML. RS determines the current that flows through the load (IL) and the LM4050QML (IQ). Since load current and supply voltage may vary, RS should be small enough to supply at least the maximum ensured IRMIN (spec. table) to the LM4050QML even when the supply voltage is at its minimum and the load current is at its maximum value. When the supply voltage is at its maximum and IL is at its minimum, RS should be large enough so that the current flowing through the LM4050QML is less than 15 mA. RS is determined by the supply voltage, (VS), the load and operating current, (IL and IQ), and the LM4050QML's reverse breakdown voltage, VR. (1) Radiation Environments Careful consideration should be given to environmental conditions when using a product in a radiation environment. TOTAL IONIZING DOSE Radiation hardness assured (RHA) products are those part numbers with a total ionizing dose (TID) level specified in the Ordering Information table on the front page. Testing and qualification of these products is done on a wafer level according to MIL-STD-883, Test Method 1019. Wafer level TID data is available with lot shipments. Testing and qualification is performed at the 30, 50 and 100 krad TID levels at a dose rate of 10 mrad/s, using a 1.5X overtest at each TID level. For the 30 krad level units are tested to 50 krad, for 50 krad units are tested to 80 krad and for 100 krad units are tested to 150 krad, with all parameters remaining inside the post irradiation test limits. 10 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML LM4050QML www.ti.com SNVS627G – JUNE 2010 – REVISED JULY 2013 SINGLE EVENT EFFECTS (SEE) One time single event effects characterization was performed according to EIA/JEDEC Standard, EIA/JEDEC57. A test report is available upon request. SINGLE EVENT TRANSIENTS (SET) With a 60 µF capacitor on the output, no single event transients were seen at the highest linear energy transfer (LET) tested: 59 MeV-cm2/mg. SET characterization with other capacitor values is in the SEE report, available upon request. SINGLE EVENT FUNCTIONAL INTERRUPT (SEFI) No single event functional interrupts were detected to the highest linear energy transfer (LET) tested: 100 MeVcm2/mg. Typical Applications LM4050QML Figure 12. Shunt Regulator +12V 20 k: VZ 60 PF LM4050-5.0QML DAC121S101QML SYNC VOUT = 0V to 5V DIN SCLK Figure 13. The LM4050QML as a power supply and reference Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML 11 LM4050QML SNVS627G – JUNE 2010 – REVISED JULY 2013 www.ti.com 12V 2.2k VZ 60 PF 30 PF LM4050-5.0QML VD VA ADC128S102QML IN0 IN1 IN2 IN3 IN4 IN5 IN6 SCLK CS DIN DOUT IN7 Figure 14. The LM4050QML as a power supply and reference The LM4050QML is a good choice as a power regulator for the DAC121S101QML or ADC128S102QML. The minimum resistor value in the circuit of Figure 13 or Figure 14 should be chosen such that the maximum current through the LM4050QML does not exceed its 15 mA rating. The conditions for maximum current include the input voltage at its maximum, the LM4050QML voltage at its minimum, the resistor value at its minimum due to tolerance, and the DAC121S101QML or ADC128S102QML draws zero current. The maximum resistor value must allow the LM4050QML to draw more than its minimum current for regulation plus the maximum DAC121S101QML or ADC128S102QML current in full operation. The conditions for minimum current include the input voltage at its minimum, the LM4050QML voltage at its maximum, the resistor value at its maximum due to tolerance, and the DAC121S101QML or ADC128S102QML draws its maximum current. These conditions can be summarized as R(min) = ( VIN(max) − VZ(min) / (IA(min) + IZ(max) (2) R(max) = ( VIN(min) − VZ(max) / (IA(max) + IZ(min) (3) and where VZ(min) and VZ(max) are the nominal LM4050QML output voltages ± the LM4050QML output tolerance over temperature, IZ(max) is the maximum allowable current through the LM4050QML, IZ(min) is the minimum current required by the LM4050QML for proper regulation, IA(max) is the maximum DAC121S101QML or ADC128S102QML supply current, and IA(min) is the minimum DAC121S101QML or ADC128S102QML supply current. 12 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML LM4050QML www.ti.com SNVS627G – JUNE 2010 – REVISED JULY 2013 LM4050-10QML Nominal clamping voltage is ±11.5V (LM4050QML's reverse breakdown voltage +2 diode VF). Bounded amplifier reduces saturation-induced delays and can prevent succeeding stage damage. Figure 15. Bounded amplifier LM4050-2.5QML The bounding voltage is ±4V with the LM4050-2.5QML (LM4050QML's reverse breakdown voltage + 3 diode VF). Figure 16. Protecting Op Amp input Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML 13 LM4050QML SNVS627G – JUNE 2010 – REVISED JULY 2013 www.ti.com LM4050-2.5QML LM4050-2.5QML Figure 17. Precision 1 μA to 1 mA Current Sources (4) Engineering Samples (Parts with MPR suffix) Engineering samples are available for order and are identified by the "MPR" in the orderable device name (see Package Options Addendum at the end of the datasheet). Engineering (MPR) samples meet the performance specifications of the datasheet at room temperature only and have not received the full space production flow or testing. Engineering samples may be QCI rejects that failed tests that would not impact the performance at room temperature, such as radiation or reliability testing. Revision History Date Released Revision Section Changes A Initial Release New Product Low Dose Qualified LM4050WG2.5RLQV Initial Release 01/20/2012 B General Description, Features, Key Specifications, Ordering Table, Operating Ratings, Package Thermal Table, Electrical Section General Description, Features, Key Specifications, Ordering Table, Operating Ratings, Package Thermal Table, Electrical Section — Added the 5.0 V option information for all sections. Added new NSIDS LM4050WG5.0RLQV and LM4050WG5.0–MPR Voltage option to data sheet. Revision A will be Archived. 05/23/2012 C Electrical Section Electrical Section — Updated Delta Vr/Delta T for typical limits for both the 2.5 and 5.0 versions. Revision B will be Archived. 04/01/2013 F All Changed layout of National Data Sheet to TI format. 07/12/2013 G Post Radiation @ 25°C; Added Engineering Samples Changed 5V and 2.5V Post Radiation limits so they are the same for both voltages. Added information about orderable engineering samples. 08/20/2010 14 Submit Documentation Feedback Copyright © 2010–2013, Texas Instruments Incorporated Product Folder Links: LM4050QML PACKAGE OPTION ADDENDUM www.ti.com 16-Sep-2014 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Drawing Qty 54 Eco Plan Lead/Ball Finish MSL Peak Temp (2) (6) (3) Op Temp (°C) Device Marking TBD Call TI Call TI -55 to 125 LM4050WG 2.5RLQV Q 5962R09235 61VZA ACO 61VZA >T TBD Call TI Call TI 25 Only LM4050WG 2.5-MPR ES ACO ES >T (4/5) 5962R0923561VZA ACTIVE CFP NAC 10 LM4050WG2.5-MPR ACTIVE CFP NAC 10 LM4050WG2.5RLQV ACTIVE CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM4050WG 2.5RLQV Q 5962R09235 61VZA ACO 61VZA >T LM4050WG5.0RLQV PREVIEW CFP NAC 10 54 TBD Call TI Call TI -55 to 125 LM4050WG 5.0RLQV Q 5962R09235 62VZA ACO 62VZA >T (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) (3) MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com (4) 16-Sep-2014 There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device. 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