HSMC HSD879 Silicon npn epitaxial type transistor Datasheet

HI-SINCERITY
MICROELECTRONICS CORP.
Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2002.02.25
Page No. : 1/3
HSD879
SILICON NPN EPITAXIAL TYPE TRANSISTOR
Description
For 1.5V and 3v electronic flash use.
Features
TO-92
• Charger-up time is about 1 ms faster than of a germanium transistor
• Small saturation voltage can bring less power dissipation and flashing times
Absolute Maximum Ratings
• Maximum Temperatures
Storage Temperature ............................................................................................ -55 ~ +150 °C
Junction Temperature .................................................................................... +150 °C Maximum
• Maximum Power Dissipation
Total Power Dissipation (Ta=25°C) ................................................................................ 750 mW
• Maximum Voltages and Currents (Ta=25°C)
BVCBO Collector to Base Voltage....................................................................................... 30 V
BVCEX Collector to Emitter Voltage .................................................................................... 20 V
BVCEO Collector to Emitter Voltage.................................................................................... 10 V
BVEBO Emitter to Base Voltage............................................................................................ 6 V
IC Collector Current............................................................................................................... 3 A
IC Collector Current (Pluse) .................................................................................................. 5 A
Electrical Characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
BVCEO
BVEBO
BVCBO
BVCEX
ICBO
IEBO
*hFE
*VCE(sat)
fT
Cob
10
6
30
20
140
-
210
0.3
200
30
100
100
400
0.4
-
V
V
V
V
nA
nA
V
MHZ
pF
Test Condition
IC=1mA
IE=10uA
IC=10uA
IC=1mA, VBE=3V
VCB=20V
VBE=4V
VCE=2V, IC=3A
IC=3A, IB=60mA
VCE=10V, IC=50mA
VCB=10V, f=1MHZ
*Pulse Test: Pulse Width ≤380us, Duty Cycle≤2%
HSD879
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2002.02.25
Page No. : 2/3
MICROELECTRONICS CORP.
Characteristics Curve
Saturation Voltage & Collector Current
Current Gain & Collector Current
1000
1000
VCE(sat) @ IC=50IB
o
125 C
o
Saturation Voltage (mV)
75 C
o
hFE
25 C
hFE @ VCE=2V
o
75 C
100
o
125 C
o
25 C
100
10
1
10
100
1000
10000
1
Collector Current-IC (mA)
100
1000
10000
Collector Current-IC (mA)
Capacitance & Reverse-Biased Voltage
Cutoff Frequency & Collector Current
100
1000
VCE=10V
100
Capacitance (pF)
Cutoff Frequency (MHz)...
10
10
1
Cob
10
1
1
10
100
1000
Collector Current (mA)
1
10
100
Reverse Biased Voltage (V)
Power Derating
800
Power Dissipation-PD (mW)
700
600
500
400
300
200
100
0
0
50
100
150
200
o
Ambient Temperature-Ta ( C)
HSD879
HSMC Product Specification
HI-SINCERITY
Spec. No. : HA200207
Issued Date : 1996.07.15
Revised Date : 2002.02.25
Page No. : 3/3
MICROELECTRONICS CORP.
TO-92 Dimension
α2
A
Marking:
H
SD
8 7 9
B
1
2
3
Date Code
Control Code
α3
Style: Pin 1.Emitter 2.Collector 3.Base
C
D
H
I
G
α1
E
F
3-Lead TO-92 Plastic Package
HSMC Package Code: A
*: Typical
Inches
Min.
Max.
0.1704 0.1902
0.1704 0.1902
0.5000
0.0142 0.0220
*0.0500
0.1323 0.1480
DIM
A
B
C
D
E
F
Millimeters
Min.
Max.
4.33
4.83
4.33
4.83
12.70
0.36
0.56
*1.27
3.36
3.76
DIM
G
H
I
α1
α2
α3
Inches
Min.
Max.
0.0142 0.0220
*0.1000
*0.0500
*5°
*2°
*2°
Millimeters
Min.
Max.
0.36
0.56
*2.54
*1.27
*5°
*2°
*2°
Notes: 1.Dimension and tolerance based on our Spec. dated Apr. 25,1996.
2.Controlling dimension: millimeters.
3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
4.If there is any question with packing specification or packing method, please contact your local HSMC sales office.
Material:
• Lead: 42 Alloy; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
HSD879
HSMC Product Specification
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