Zetex FMMTL718 Pnp silicon planar high gain medium power transistor Datasheet

SOT23 PNP SILICON PLANAR HIGH GAIN
MEDIUM POWER TRANSISTOR
FMMTL718
ISSUE 1 – DECEMBER 1997
FEATURES
Very low equivalent on-resistance; RCE(sat)=210mΩ at 1.5A
COMPLEMENTARY TYPE –
FMMTL618
PARTMARKING DETAIL –
L78
E
C
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VALUE
UNIT
Collector-Base Voltage
VCBO
-20
V
Collector-Emitter Voltage
VCEO
-20
V
Emitter-Base Voltage
VEBO
-5
V
Continuous Collector Current
IC
-1
A
Peak Pulse Current
ICM
-2
A
Base Current
IB
-200
mA
Power Dissipation at Tamb=25°C
Ptot
-500
mW
Operating and Storage Temperature Range
Tj:Tstg
-55 to +150
°C
FMMTL718
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C).
PARAMETER
SYMBOL
MIN.
TYP.
UNIT
CONDITIONS.
Collector-Base
Breakdown Voltage
V(BR)CBO
-20
-65
V
IC=-100µA
Collector-Emitter
Breakdown Voltage
V(BR)CEO
-55
V
IC=-10mA*
Emitter-Base
Breakdown Voltage
V(BR)EBO
-8.8
V
IE=-100µA
-20
-5
MAX.
Collector Cut-Off Current ICBO
-10
nA
VCB=-15V
Emitter Cut-Off Current
IEBO
-10
nA
VEB=-4V
Collector Cut-Off Current ICES
-10
nA
VCE=-15V
Collector-Emitter
Saturation Voltage
VCE(sat)
-33
-130
-230
-315
-50
-180
-320
-450
mV
mV
mV
mV
IC=-100mA, IB=-10mA*
IC=-500mA, IB=-20mA*
IC=-1A, IB=-50mA*
IC=-1.5A,IB=-100mA
Base-Emitter
Saturation Voltage
VBE(sat)
-950
-1100
mV
IC=-1.25A, IB=-100mA*
Base-Emitter
Turn On Voltage
VBE(on)
-850
-1000
mV
IC=-1.25A, VCE=-2V*
Static Forward
Current Transfer Ratio
hFE
Transition Frequency
fT
265
Collector-Base
Breakdown Voltage
Cobo
9
Switching times
ton
toff
108
121
300
300
200
120
50
500
450
320
200
80
IC=-10mA, VCE=-2V
IC=-100mA, VCE=-2V*
IC=-0.5A, VCE=-2V*
IC=-1A, VCE=-2V*
IC=-1.5A, VCE=-2V*
12
MHz
IC=-50mA, VCE=-10V
f=100MHz
pF
VCB=-10V, f=1MHz
ns
ns
IC=-1A, VCC=-10V
IB1=IB2=-10mA
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
FMMTL718
TYPICAL CHARACTERISTICS
0.5
0.5
+25°C
IC/IB=10
0.4
VCE(sat) - (V)
VCE(sat) - (V)
0.4
IC/IB=10
IC/IB=20
IC/IB=50
0.3
0.2
-55°C
+25°C
+100°C
+150°C
0.3
0.2
0.1
0.1
0
0
1m
10m
100m
1
10
10m
1m
IC - Collector Current (A)
VCE(sat) v IC
1
100m
10
IC - Collector Current (A)
VCE(sat) v IC
800
IC/IB=10
1.2
+100°C
+25°C
-55°C
VBE(sat) - (V)
hFE - Typical Gain
VCE=2V
400
0
0.8
-55°C
+25°C
+100°C
+150°C
0.4
0
10m
1m
1
100m
10
1m
IC - Collector Current (A)
hFE v IC
10m
1
100m
10
IC - Collector Current (A)
VBE(sat) v IC
1.2
2
IC - Collector Current (A)
VCE=2V
VBE(on) - (V)
1
0.8
0.6
0.4
-55°C
+25°C
+100°C
+150°C
0.2
0
1
DC
1s
100ms
10ms
1ms
100µs
100m
10m
1m
10m
100m
1
IC - Collector Current (A)
VBE(on) v IC
10
0.1
1
10
VCE - Collector Emitter Voltage (V)
Safe Operating Area
100
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