SRAM AS5C1008 128K x 8 SRAM PIN ASSIGNMENT RUGGEDIZED PLASTIC HIGH SPEED SRAM (Top View) 32-Pin Plastic SOJ (DJ) FEATURES • • • • • • • • Access times of 15, 20, 25 and 35 ns Fast output enable (tAOE) for cache applications Low active power Low standby power Fully static operation, no clock or refresh required TTL Compatible Inputs and Outputs Single +5V power supply Package in Industry-standard 32-pin SOJ OPTIONS NC A6 A5 A4 A3 A2 A1 A0 A16 A15 A14 A13 I/O0 I/O1 I/02 Vss MARKING • Timing 15ns access 20ns access 25ns access 35ns access -15 -20 -25 -35 • Package Plastic SOJ* DJ No. 905 • Operating Temperature Ranges -Military (-55oC to +125oC) -Industrial (-40oC to +85oC) XT IT 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Vcc A7 CE2 WE\ A8 A9 A10 A11 OE\ A12 CE\1 I/O7 I/O6 I/O5 I/O4 I/O3 PIN FUNCTIONS GENERAL DESCRIPTION The AS5C1008 is a high speed, low power, 128K by 8-bit ruggedized plastic (COTS) CMOS Static RAM. It is fabricated using high performance, CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields access times as fast as 15ns (Max) over the military and industrial temperature ranges. When Chip Enable (CE\) is HIGH, the device assumes a standby mode at which the power dissipation can be reduced down to 125mW (max) at CMOS input levels. Easy memory expansion is provided by using asserted LOW CE\ and asserted HIGH CE2, and asserted LOW write enable (WE\) controls both writing and reading of the memory. TheAS5C1008 is pin-compatible with other 128K x 8 SRAM’s in the SOJ package. A0 - A16 Address Inputs WE\ Write Enable CE\1, CE2 Chip Enable OE\ Output Enable I/O0 - I/O7 Data Inputs/Outputs VCC Power VSS Ground NC No Connection For more products and information please visit our web site at www.micross.com *For ceramic versions of this product, please see the MT5C1008 datasheet. AS5C1008 Rev. 3.9 10/10 Micross Components reserves the right to change products or specifications without notice. 1 SRAM AS5C1008 ABSOLUTE MAXIMUM RATINGS* Vcc Supply Relative to GND...................................-0.5V to +7.0V Voltage on any pin Relative to GND.........-0.5V to Vcc +7.0V Storage Temperature ............................................-65°C to +150°C Ambient Temperature with Power Applied........-55oC to +125oC Short Circuit Output Current.................................................260oC Power Dissipation...................................................................1.0W *Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operation section of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. FUNCTIONAL BLOCK DIAGRAM A0 Address Decoder Memory Matrix Input Data Control Column I/O A16 I/O0 Data I/O7 CE\1 CE2 WE\ OE\ AS5C1008 Rev. 3.9 10/10 Micross Components reserves the right to change products or specifications without notice. 2 SRAM AS5C1008 ELECTRICAL CHARACTERISTICS AND RECOMMENDED DC OPERATING CONDITIONS (-55oC<TA<+125oC or -40oC to +85oC; Vcc = 5V+10%) PARAMETER Dynamic Operating Current TTL Standby Current TTL Inputs CONDITIONS -15 -20 -25 -35 SYMBOL MIN MAX MIN MAX MIN MAX MIN MAX UNITS Vcc=MAX, IOUT = 0mA, CE1 = VIL and CE2 = VIH, f = fmax Vcc=MAX, VIN = VIH or VIL, CE\1> VIH and CE2 > VIL, f = fmax Vcc=MAX, CE\1 > Vcc -0.2V, or CE2 CMOS Standby Current < 0.2V, VIN > Vcc -0.2V and CMOS Inputs VIN < 0.2V, f = 0 ICC1 180 150 140 125 mA ISB1 90 75 70 60 mA ISB2 10 10 10 10 mA Input Leakage Current GND < VIN < Vcc ILI -10 10 -10 10 -10 10 -10 10 PA Output Leakage Current GND < VOUT < Vcc Output Disabled ILO -10 10 -10 10 -10 10 -10 10 PA Output High Voltage Vcc = MIN, I OH = -4.0 mA VOH 2.4 Output Low Voltage Vcc = MIN, I OL = 8.0 mA VOL 0.4 0.4 0.4 0.4 V Input High Voltage VIH 2.2 Vcc +0.5 2.2 Vcc +0.5 2.2 Vcc +0.5 2.2 Vcc +0.5 V Input Low Voltage VIL -0.5 0.8 -0.5 0.8 -0.5 0.8 -0.5 0.8 V PIN DESCRIPTIONS 2.4 2.4 V OE\: Output Enable Input The Output Enable Input is asserted LOW. If asserted LOW while CE\1 is asserted (LOW) and CE2 is asserted (HIGH) and WE\ is deasserted (HIGH), data from the SRAM will be present on the I/O pins. The I/O pins will be in the high-impedance state when OE\ is deasserted. A0 - A16: Address Inputs These 17 address inputs select one of the 131,072 8-bit words in the RAM. CE\1: Chip Enable 1 Input CE\1 is asserted LOW to read from or write to the device. If Chip Enable 1 is deasserted, the device is deselected and is in standby power mode. The I/O pins will be in the highimpedance state when the device is deselected. WE\: Write Enable Input The Write Enable input is asserted LOW and controls read and write operations. When CE\1 and WE\ are both asserted (LOW) and CE2 is asserted (HIGH) input data present on the I/O pins will be written into the selected memory location. CE2: Chip Enable 2 Input CE2 is asserted HIGH to read from or write to the device. If Chip Enable 2 is deasserted, the device is deselected and is in standby power mode. The I/O pins will be in the highimpedance state when the device is deselected. AS5C1008 Rev. 3.9 10/10 2.4 Micross Components reserves the right to change products or specifications without notice. 3 SRAM AS5C1008 ELECTRICAL CHARACTERISTICS AND RECOMMENDED AC OPERATING CONDITIONS (-55oC<TA<+125oC or -40oC to +85oC; Vcc = 5V+10%) -15 DESCRIPTION SYMBOL 1 MIN -20 MAX MIN -25 MAX MIN -35 MAX MIN MAX UNIT READ CYCLE Read Cycle Time tRC Address Access Time tAA 15 20 25 35 ns Chip Enable Access Time tACE 15 20 25 35 ns Output Hold from Address Change tOH 3 3 3 3 ns Chip Enable to Output in Low-Z tLZCE 3 3 3 3 ns Chip Disable to Output in High-Z tHZCE 7 8 10 15 ns Output Enable Access Time tAOE 7 7 10 15 ns Output Enable to Output in Low-Z tLZOE Output Disable to Output in High-Z tHZOE 15 20 0 25 0 7 35 0 8 ns 0 10 ns 15 ns WRITE CYCLE Write Cycle Time tWC 15 20 25 35 ns Chip Enable to End of Write tCW 12 15 20 25 ns Address Valid to End of Write tAW 12 15 20 25 ns Address Set-up Time tAS 0 0 0 0 ns Address Hold from End of Write tAH 0 0 0 0 ns Write Pulse Width (OE\ > VIH) tWP 12 15 20 30 ns Data Set-up Time tDS 8 10 15 20 ns Data Hold Time tDH 0 0 0 0 ns Write Disable to Output in Low-Z tLZWE 5 5 5 5 ns Write Enable to Output in High-Z tHZWE 7 9 10 15 ns NOTE: 1. tLZCE, tLZWE, tHZCE, tLZOE, and tHZOEare simulated values. AS5C1008 Rev. 3.9 10/10 Micross Components reserves the right to change products or specifications without notice. 4 SRAM AS5C1008 CAPACITANCE (TA = +25oC, f = 1.0 MHz) PARAMETER Input Capacitance Output Capacitance CONDITION SYMBOL MAX UNIT VIN = 0V CIN 6 pF VOUT = 0V COUT 8 pF AC TEST CONDITIONS Input Pulse Levels...............................................GND to 3.0V Input Rise and Fall Times..................................................3ns Input Timing Reference Levels........................................1.5V Output Reference Levels..................................................1.5V Output Load.........................................................See Figure 1 +5V +5V 480Ω 480Ω Q Q 255Ω 30 255Ω 5 pF for tLZCE, tHZCE, tLZWE, tHZWE, tLZOE, and tHZOE Fig. 1 OUTPUT LOAD EQUIVALENT AS5C1008 Rev. 3.9 10/10 Micross Components reserves the right to change products or specifications without notice. 5 SRAM AS5C1008 READ CYCLE TIMING 1(1) tRC ADDR tAA tOH DOUT DATA VALID PREVIOUS DATA VALID NOTE: 1. CE\ is HIGH for READ cycle. READ CYCLE TIMING 2 (1) CE\1 tRC CE2 tACE tAOE OE\ tHZCE(2) DOUT High-Z tLtLZCE tHZCE DATA VALID NOTES: 1. CE\ is HIGH for READ cycle. 2. At any given temperature and voltage condition, tHZCE is less than tLZCE. WRITE CYCLE TIMING (WE\ CONTROLLED, OE\ = LOW) tWC ADDR tAW tAH tCW CE\1 CE2 WE\ tAS tWP2 tLZWE tDS DIN tDH DATA tHZHigh-Z DOUT UNDEFINED AS5C1008 Rev. 3.9 10/10 DON’T CARE Micross Components reserves the right to change products or specifications without notice. 6 SRAM AS5C1008 WRITE CYCLE TIMING (CE\1 CONTROLLED, OE\ = LOW) tWC ADDR tAW tAH tCW CE\1 CE2 WE\ tAS tWP1 tDS DIN tDH DATA VALID High-Z DOUT WRITE CYCLE TIMING (CE2 CONTROLLED, OE\ = LOW) tWC ADDR CE\1 tAS tAW tAH tCW CE2 tWP1 WE\ tDS DATA VALID DIN DOUT tDH High-Z UNDEFINED AS5C1008 Rev. 3.9 10/10 DON’T CARE Micross Components reserves the right to change products or specifications without notice. 7 SRAM AS5C1008 MECHANICAL DEFINITION* Micross Case #905 (Package Designator DJ) A A1 A2 e1 e b e2 D C B E2 E1 E SYMBOL A A1 A2 B b C D E E1 E2 e e1 e2 MICROSSPACKAGESPECIFICATIONS MIN MAX 0.140BSC 0.105 0.115 0.027TYP 0.082 ͲͲͲ 0.018TYP 0.010TYP 0.820 0.880 0.430 0.445 0.395 0.405 0.360 0.380 0.025 0.032 0.050TYP ͲͲͲ 0.045 * All measurements are in inches. AS5C1008 Rev. 3.9 10/10 Micross Components reserves the right to change products or specifications without notice. 8 SRAM AS5C1008 ORDERING INFORMATION EXAMPLE: AS5C1008DJ-25/XT Device Number Package Type Speed ns Process AS5C1008 DJ -15 /* AS5C1008 AS5C1008 AS5C1008 DJ DJ DJ -20 -25 /* /* /* *AVAILABLE PROCESSES IT = Industrial Temperature Range XT = Extended Temperature Range AS5C1008 Rev. 3.9 10/10 -35 -40oC to +85oC -55oC to +125oC Micross Components reserves the right to change products or specifications without notice. 9 SRAM AS5C1008 DOCUMENT TITLE 128K x 8 SRAM RUGGEDIZED PLASTIC HIGH SPEED SRAM REVISION HISTORY Rev # 3.7 History Updated AC & DC Specs Release Date March 2009 Status Release 3.8 Updated Micross Information January 2010 Release 3.9 Updated Order Chart October 2010 Release AS5C1008 Rev. 3.9 10/10 Micross Components reserves the right to change products or specifications without notice. 10