INCHANGE Semiconductor Schottky Barrier Rectifier MBR7030WT FEATURES ·Low Forward Voltage ·Guard -Ring for Stress Protection ·High Surge Capability ·Pb-Free Package is Available ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation MECHANICAL CHARACTERISTICS ·Case: Epoxy, Molded ·Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable ·Lead Temperature for Soldering Purposes: 260℃ Max. for 10 Seconds ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VRRM VRWM VR Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage 30 V IF(AV) Average Rectified Forward Current (Rated VR) TC= 125℃ Per Diode Per Device 35 70 A IFSM Nonrepetitive Peak Surge Current 8.3ms single half sine-wave superimposed on rated load conditions 500 A IRRM Peak Repetitive Reverse Surge Current (20μs, 1.0kHz) 2.0 A Junction Temperature -55~150 ℃ Tstg Storage Temperature Range -55~150 ℃ dv/dt Voltage Rate of Change (Rated VR) 10,000 V/μs TJ isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark INCHANGE Semiconductor Schottky Barrier Rectifier MBR7030WT THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance,Junction to Case MAX UNIT 0.55 ℃/W MAX UNIT ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤2.0%) SYMBOL VF IR PARAMETER Maximum Instantaneous Forward Voltage Maximum Instantaneous Reverse Current isc website：www.iscsemi.com CONDITIONS IF= 35A ; Tc= 25℃ 0.55 IF= 70A ; Tc= 25℃ 0.72 IF= 35A ; Tc= 100℃ 0.52 VR= VRWM;Tc= 25℃ 5 VR= VRWM;Tc= 100℃ 250 2 V mA isc & iscsemi is registered trademark