isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS22B/C DESCRIPTION ·High Switching Speed ·Collector-Emitter Sustaining Voltage: VCEO(SUS)= 400V (Min)-BUS22B 450V (Min)-BUS22C APPLICATIONS ·Designed for use in converters, inverters, switching regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCES VCEO VEBO PARAMETER Collector- Emitter Voltage(VBE= 0) Collector-Emitter Voltage MAX BUS22B 750 BUS22C 850 BUS22B 400 BUS22C 450 UNIT V V Emitter-Base Voltage 9 V IC Collector Current-Continuous 8 A ICM Collector Current-Peak 20 A IB Base Current-Continuous 4 A IBM Base Current-Peak 6 A PC Collector Power Dissipation @TC=25℃ 125 W Tj Junction Temperature 200 ℃ -65~200 ℃ B Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance, Junction to Case 1.4 ℃/W isc Website：www.iscsemi.cn isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistors BUS22B/C ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BUS22B VCEO(SUS) Collector-Emitter Sustaining Voltage MAX IC= 0.1A ; IB= 0; L= 25mH BUS22B VBE(sat) TYP. UNIT 400 BUS22C VCE(sat) MIN V 450 IC= 6A; IB= 0.8A 1.5 B Collector-Emitter Saturation Voltage V BUS22C IC= 6A; IB= 1A 1.5 BUS22B IC= 6A; IB= 0.8A 1.5 B B Base-Emitter Saturation Voltage V BUS22C IC= 6A; IB= 1A 1.5 B ICES Collector Cutoff Current VCE=VCESMmax; VBE= 0 1 mA IEBO Emitter Cutoff Current VEB= 9V; IC= 0 10 mA hFE DC Current Gain IC= 1A ; VCE= 5V 18 Switching Times , Resistive Load ton Turn-On Time tstg Storage Time 0.5 μs 3.0 μs 0.3 μs For BUS22B IC= 6A ;IB1= -IB2= 0.8A For BUS22C IC= 6A ;IB1= -IB2= 1A tf Fall Time isc Website：www.iscsemi.cn