Mitsubishi FS100UM-03 High-speed switching use Datasheet

MITSUBISHI Nch POWER MOSFET
FS100UM-03
HIGH-SPEED SWITCHING USE
FS100UM-03
OUTLINE DRAWING
Dimensions in mm
4.5
10.5MAX.
1.3
16
7.0
3.2
r
1.0
3.8MAX.
D
0.8
2.54
2.54
0.5
2.6
4.5MAX.
12.5MIN.
f 3.6
q w e
wr
¡10V DRIVE
¡VDSS .................................................................................. 30V
¡rDS (ON) (MAX) ............................................................. 5.4mΩ
¡ID ....................................................................................... 100A
¡Integrated Fast Recovery Diode (TYP.) ........... 100ns
q GATE
w DRAIN
e SOURCE
r DRAIN
q
e
TO-220
APPLICATION
Motor control, Lamp control, Solenoid control
DC-DC converter, etc.
MAXIMUM RATINGS
Symbol
(Tc = 25°C)
Ratings
Unit
VDSS
Drain-source voltage
VGS = 0V
30
V
VGSS
ID
Gate-source voltage
Drain current
VDS = 0V
±20
100
V
A
IDM
IDA
Drain current (Pulsed)
Avalanche drain current (Pulsed)
400
100
A
A
IS
ISM
Source current
Source current (Pulsed)
100
400
A
A
PD
T ch
Maximum power dissipation
Channel temperature
125
–55 ~ +150
W
°C
–55 ~ +150
°C
g
T stg
—
Parameter
Conditions
L = 30µH
Storage temperature
Weight
Typical value
2.0
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS100UM-03
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
(Tch = 25°C)
Symbol
Parameter
V (BR) DSS
IGSS
Drain-source breakdown voltage
Gate-source leakage current
IDSS
VGS (th)
Drain-source leakage current
Gate-source threshold voltage
rDS (ON)
Drain-source on-state resistance
VDS (ON)
y fs
Drain-source on-state voltage
Forward transfer admittance
Ciss
Coss
Input capacitance
Output capacitance
Crss
td (on)
Reverse transfer capacitance
Turn-on delay time
tr
td (off)
Rise time
Turn-off delay time
tf
Fall time
VSD
Rth (ch-c)
Source-drain voltage
Thermal resistance
trr
Reverse recovery time
Limits
Test conditions
Unit
Min.
Typ.
Max.
30
—
—
—
—
±0.1
V
µA
—
2.0
—
3.0
0.1
4.0
mA
V
ID = 1mA, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = 30V, VGS = 0V
ID = 1mA, VDS = 10V
ID = 50A, VGS = 10V
—
4.0
5.4
mΩ
ID = 50A, VDS = 10V
—
—
0.20
80
0.27
—
V
S
VDS = 10V, VGS = 0V, f = 1MHz
—
—
6600
2250
—
—
pF
pF
—
—
1300
90
—
—
pF
ns
—
—
260
350
—
—
ns
ns
—
280
—
ns
—
—
1.0
—
1.5
1.00
—
100
—
V
°C/W
ns
ID = 50A, VGS = 10V
VDD = 15V, ID = 50A, VGS = 10V, RGEN = RGS = 50Ω
IS = 50A, VGS = 0V
Channel to case
IS = 50A, dis/dt = –50A/µs
PERFORMANCE CURVES
DRAIN CURRENT ID (A)
160
120
80
40
0
0
50
100
150
tw = 10ms
100ms
102
7
5
3
2
1ms
10ms
101
7
5
3
2
DC
100 TC = 25°C
7 Single Pulse
5
3 5 7 100 2 3 5 7 101 2 3 5 7 102 2 3
200
CASE TEMPERATURE TC (°C)
DRAIN-SOURCE VOLTAGE VDS (V)
OUTPUT CHARACTERISTICS
(TYPICAL)
OUTPUT CHARACTERISTICS
(TYPICAL)
VGS = 20V 10V 8V
100
DRAIN CURRENT ID (A)
MAXIMUM SAFE OPERATING AREA
5
3
2
VGS = 20V 10V 7V 6V
50
TC = 25°C
Pulse Test
TC = 25°C
Pulse Test
6V
80
60
5V
40
PD = 35W
20
DRAIN CURRENT ID (A)
POWER DISSIPATION PD (W)
POWER DISSIPATION DERATING CURVE
200
40
5V
30
20
4V
10
4V
0
0
0.2
0.4
0.6
0.8
1.0
DRAIN-SOURCE VOLTAGE VDS (V)
0
0
0.1
0.2
0.3
0.4
0.5
DRAIN-SOURCE VOLTAGE VDS (V)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS100UM-03
HIGH-SPEED SWITCHING USE
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
TC = 25°C
Pulse Test
0.8
0.6
ID = 100A
0.4
70A
50A
0.2
0
0
4
8
12
TC = 25°C
VDS = 10V
Pulse Test
2
FORWARD TRANSFER
ADMITTANCE yfs (S)
102
VDS = 10V
7
Pulse Test
5
4
3
2
101
7
5
4
3
TC = 25°C
75°C
125°C
2
0
4
8
12
16
100 0
10
20
2 3 4 5 7 101
2 3 4 5 7 102
GATE-SOURCE VOLTAGE VGS (V)
DRAIN CURRENT ID (A)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
SWITCHING CHARACTERISTICS
(TYPICAL)
Tch = 25°C
7 VGS = 0V
5
3
2
Ciss
Coss
Crss
3 5 7100 2 3 5 7 101 2 3 5 7 102 2 3
DRAIN-SOURCE VOLTAGE VDS (V)
SWITCHING TIME (ns)
105 f = 1MHZ
CAPACITANCE
Ciss, Coss, Crss (pF)
20V
FORWARD TRANSFER ADMITTANCE
VS.DRAIN CURRENT
(TYPICAL)
20
103
7
5
3
2
VGS = 10V
4
TRANSFER CHARACTERISTICS
(TYPICAL)
40
104
7
5
3
2
6
0
100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103
20
60
2
8
DRAIN CURRENT ID (A)
80
0
TC = 25°C
Pulse Test
GATE-SOURCE VOLTAGE VGS (V)
100
DRAIN CURRENT ID (A)
16
10
DRAIN-SOURCE ON-STATE
RESISTANCE rDS (ON) (mΩ)
DRAIN-SOURCE ON-STATE
VOLTAGE VDS (ON) (V)
1.0
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
103
7
5
4
3
td(off)
tf
2
tr
td(on)
102
7
5
4
3 Tch = 25°C
2 VDD = 15V
101
VGS = 10V
RGEN = RGS = 50Ω
100
2 3 4 5 7 101
2 3 4 5 7 102
DRAIN CURRENT ID (A)
Feb.1999
MITSUBISHI Nch POWER MOSFET
FS100UM-03
HIGH-SPEED SWITCHING USE
20
SOURCE CURRENT IS (A)
12
VDS = 15V
8
20V
25V
4
0
40
80
120
160
50
0
0.4
0.8
1.2
1.6
2.0
GATE CHARGE Qg (nC)
SOURCE-DRAIN VOLTAGE VSD (V)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
5.0
2
100
7
5
4
3
2
–50
0
50
100
VDS = 10V
ID = 1mA
4.0
3.0
2.0
1.0
0
150
CHANNEL TEMPERATURE Tch (°C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
1.4
VGS = 0V
ID = 1mA
1.2
1.0
0.8
0.6
0.4
TC = 125°C
75°C
25°C
25
0
101
7 VGS = 10V
ID = 1/2ID
5 Pulse Test
4
3
10–1
VGS = 0V
Pulse Test
75
200
GATE-SOURCE THRESHOLD
VOLTAGE VGS (th) (V)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (25°C)
DRAIN-SOURCE ON-STATE RESISTANCE rDS (ON) (t°C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (t°C)
100
Tch = 25°C
ID = 100A
16
0
DRAIN-SOURCE BREAKDOWN VOLTAGE V (BR) DSS (25°C)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
–50
0
50
100
150
CHANNEL TEMPERATURE Tch (°C)
TRANSIENT THERMAL IMPEDANCE Zth (ch–c) (°C/W)
GATE-SOURCE VOLTAGE VGS (V)
GATE-SOURCE VOLTAGE
VS.GATE CHARGE
(TYPICAL)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
101
7
5
3
2
D = 1.0
100
7 0.5
5
3 0.2
2 0.1
10–1
7
5
3
2
PDM
tw
0.05
0.02
0.01
Single Pulse
T
D= tw
T
10–2 –4
10 2 3 5710–3 2 3 5710–22 3 5710–12 3 57100 2 3 57101 2 3 57102
PULSE WIDTH tw (s)
Feb.1999
Similar pages