AP6980GN2-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ Simple Drive Requirement D ▼ Small Size & Lower Profile ▼ Halogen Free & RoHS Compliant Product G BVDSS 30V RDS(ON) 14mΩ ID 10.3A S Top view Description D AP6980 series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible onresistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. D D D S S D S D D G DFN 2x2 D D G Absolute Maximum Ratings Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ Units 30 V +20 V 3 10.3 A 3 8.2 A 25 A 2.4 W Continuous Drain Current @ VGS=10V Continuous Drain Current @ VGS=10V 1 Pulsed Drain Current IDM Rating 3 PD@TA=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-a Parameter Value Unit Maximum Thermal Resistance, Junction-ambient 3 52 ℃/W Data and specifications subject to change without notice 1 201105221 AP6980GN2-HF Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units 30 - - V BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA RDS(ON) Static Drain-Source On-Resistance2 VGS=10V, ID=8A - 11.2 14 mΩ VGS=4.5V, ID=5A - 18.3 24 mΩ VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 1 1.7 3 V gfs Forward Transconductance VDS=10V, ID=8A - 16 - S IDSS Drain-Source Leakage Current VDS=24V, VGS=0V - - 10 uA IGSS Gate-Source Leakage VGS=+20V, VDS=0V - - +100 nA Qg Total Gate Charge ID=8A - 9.5 15.2 nC Qgs Gate-Source Charge VDS=15V - 3.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 4 - nC td(on) Turn-on Delay Time VDS=15V - 9 - ns tr Rise Time ID=1A - 5 - ns td(off) Turn-off Delay Time RG=3.3Ω - 19 - ns tf Fall Time VGS=10V - 4.5 - ns Ciss Input Capacitance VGS=0V - 1100 1760 pF Coss Output Capacitance VDS=15V - 130 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 105 - pF Rg Gate Resistance f=1.0MHz - 1.2 2.4 Ω Min. Typ. Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=2A, VGS=0V - - 1.2 V trr Reverse Recovery Time IS=8A, VGS=0V, - 17 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 10 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t < 10s ; 165oC/W when mounted on min. copper pad. THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP6980GN2-HF 40 40 o 30 ID , Drain Current (A) ID , Drain Current (A) T A = 150 o C 10V 7.0V 6.0V 5.0V V G = 4.0V T A = 25 C 20 10 30 20 10 0 0 0 1 2 3 4 5 0 1 2 3 4 5 V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 24 2.0 ID=8A V G = 10 V Normalized RDS(ON) ID=5A T A =25 ℃ 20 RDS(ON) (mΩ) 10V 7.0V 6.0V 5.0V V G = 4.0V 16 12 1.6 1.2 0.8 8 0.4 2 4 6 8 10 -50 0 50 100 150 o V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 2.0 8 I D =250uA 1.6 IS(A) Normalized VGS(th) 6 4 T j =150 o C T j =25 o C 1.2 0.8 2 0.4 0 0.0 0 0.2 0.4 0.6 0.8 1 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.4 -50 0 50 100 150 o T j , Junction Temperature ( C) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP6980GN2-HF f=1.0MHz 1600 I D = 8A V DS =15V 8 1200 C iss C (pF) VGS , Gate to Source Voltage (V) 10 6 800 4 400 2 C oss C rss 0 0 0 4 8 12 16 1 20 5 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Operation in this area limited by RDS(ON) 10 ID (A) 1ms 1 10ms 100ms 0.1 1s DC o T A =25 C Single Pulse Normalized Thermal Response (Rthja) Duty factor=0.5 100us 0.2 0.1 0.1 0.05 PDM 0.02 t T 0.01 0.01 Duty factor = t/T Peak Tj = PDM x Rthja + T a Rthja = 165℃/W Single Pulse 0.001 0.01 0.01 0.1 1 10 0.0001 100 0.001 0.01 V DS , Drain-to-Source Voltage (V) 0.1 1 10 100 1000 t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance 40 12 V DS =5V ID , Drain Current (A) ID , Drain Current (A) 10 30 20 T j =150 o C 8 6 4 10 T j =25 o C 2 o T j = -40 C 0 0 0 1 2 3 4 5 V GS , Gate-to-Source Voltage (V) Fig 11. Transfer Characteristics 6 25 50 75 100 125 150 o T A , Ambient Temperature ( C ) Fig 12. Maximum Continuous Drain Current v.s. Ambient Temperature 4