IRF CPV364MM Short circuit rated fast igbt Datasheet

Preliminary Data Sheet PD - 5.035
CPV364MM
Short Circuit Rated Fast IGBT
IGBT SIP MODULE
Features
1
• Short Circuit Rated - 10µs @ 125°C, V GE = 15V
Fully isolated printed circuit board mount package
• Switching-loss rating includes all "tail" losses
TM
• HEXFRED soft ultrafast diodes
• Optimized for medium operating frequency (1 to
10kHz)
•
3
Q1
D1
9
Q3
D3
15
4
6
Q2
D2
12
D5
Q5
10
Q4
D4
18
16
D6
Q6
Product Summary
7
13
Output Current in a Typical 5.0 kHz Motor Drive
13 ARMS per phase (4.1 kW total) with T C = 90°C, T J = 125°C, Supply Voltage 360Vdc,
Power Factor 0.8, Modulation Depth 80%
19
Description
The IGBT technology is the key to International Rectifier's advanced line of IMS
(Insulated Metal Substrate) Power Modules. These modules are more efficient
than comparable bipolar transistor modules, while at the same time having the
simpler gate-drive requirements of the familiar power MOSFET. This superior
technology has now been coupled to a state of the art materials system that
maximizes power throughput with low thermal resistance. This package is highly
suited to power applications and where space is at a premium.
These new short circuit rated devices are especially suited for motor control and
other totem-pole applications requiring short circuit withstand capability.
IMS-2
Absolute Maximum Ratings
Parameter
VCES
IC @ T C = 25°C
IC @ T C = 100°C
ICM
ILM
IF @ T C = 100°C
IFM
tsc
VGE
VISOL
PD @ T C = 25°C
PD @ T C = 100°C
TJ
TSTG
Collector-to-Emitter Voltage
Continuous Collector Current, each IGBT
Continuous Collector Current, each IGBT
Pulsed Collector Current
Clamped Inductive Load Current
Diode Continuous Forward Current
Diode Maximum Forward Current
Short Circuit Withstand Time
Gate-to-Emitter Voltage
Isolation Voltage, any terminal to case, 1 minute
Maximum Power Dissipation, each IGBT
Maximum Power Dissipation, each IGBT
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 sec.
Mounting torque, 6-32 or M3 screw.
Max.
Units
600
22
12
44
44
9.3
44
10
± 20
2500
62.5
25
-40 to +150
V
A
µs
V
VRMS
W
°C
300 (0.063 in. (1.6mm) from case)
5-7 lbf•in (0.55 - 0.8 N•m)
Thermal Resistance
Parameter
RθJC (IGBT)
RθJC (DIODE)
RθCS (MODULE)
Wt
Junction-to-Case, each IGBT, one IGBT in conduction
Junction-to-Case, each diode, one diode in conduction
Case-to-Sink, flat, greased surface
Weight of module
C-425
Typ.
Max.
—
—
0.1
20 (0.7)
2.0
3.0
—
—
Units
°C/W
g (oz)
Revision 2
CPV364MM
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
VCE(on)
Parameter
Collector-to-Emitter Breakdown Voltage
Temp. Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
VGE(th)
∆VGE(th)/∆TJ
gfe
ICES
Gate Threshold Voltage
Temp. Coeff. of Threshold Voltage
Forward Transconductance
Zero Gate Voltage Collector Current
VFM
Diode Forward Voltage Drop
IGES
Gate-to-Emitter Leakage Current
V(BR)CES
∆V(BR)CES/∆TJ
Min. Typ. Max. Units
Conditions
600
—
—
V
VGE = 0V, I C = 250µA
— 0.69 — V/°C VGE = 0V, IC = 1.0mA
—
1.7
—
IC = 12A
V GE = 15V
—
2.0
—
V
IC = 22A
—
1.9
—
IC = 12A, T J = 150°C
3.0
—
5.5
VCE = VGE, IC = 250µA
—
-12
— mV/°C VCE = VGE, IC = 250µA
9.2
12
—
S
VCE = 100V, I C = 24A
—
—
250
µA
VGE = 0V, V CE = 600V
—
— 3500
VGE = 0V, V CE = 600V, T J = 150°C
—
1.3 1.7
V
IC = 15A
—
1.2 1.6
IC = 15A, T J = 150°C
—
— ±500 nA
VGE = ±20V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Qg
Qge
Qgc
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
tsc
Parameter
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Short Circuit Withstand Time
td(on)
tr
td(off)
tf
Ets
Cies
Coes
Cres
trr
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Irr
Diode Peak Reverse Recovery Current
Qrr
Diode Reverse Recovery Charge
di(rec)M/dt
Diode Peak Rate of Fall of Recovery
During t b
Notes:
Repetitive rating; V GE=20V, pulse width
limited by maximum junction temperature.
Min.
—
—
—
—
—
—
—
—
—
—
10
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ. Max. Units
Conditions
59
80
IC = 24A
8.6
10
nC
VCC = 400V
25
42
26
—
TJ = 25°C
37
—
ns
IC = 24A, V CC = 480V
240 410
VGE = 15V, R G = 10Ω
230 420
Energy losses include "tail" and
0.75 —
diode reverse recovery.
1.65 —
mJ
2.4 3.6
—
—
µs
VCC = 360V, T J = 125°C
VGE = 15V, R G = 10Ω, VCPK < 500V
28
—
TJ = 150°C,
37
—
ns
IC = 24A, V CC = 480V
380
—
VGE = 15V, R G = 10Ω
460
—
Energy losses include "tail" and
4.5
—
mJ
diode reverse recovery.
1500 —
VGE = 0V
190
—
pF
VCC = 30V
20
—
ƒ = 1.0MHz
42
60
ns
TJ = 25°C
74 120
TJ = 125°C
I F = 15A
4.0 6.0
A
TJ = 25°C
6.5
10
TJ = 125°C
V R = 200V
80 180
nC
TJ = 25°C
220 600
TJ = 125°C
di/dt = 200A/µs
188
—
A/µs TJ = 25°C
160
—
TJ = 125°C
VCC=80%(V CES), VGE=20V, L=10µH,
R G= 10Ω
Pulse width ≤ 80µs; duty factor ≤ 0.1%.
Refer to Section D for the following:
Package Outline 5 - IMS-2
Section D - page D-14
C-426
Pulse width 5.0µs,
single shot.
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