IP Semiconductor Co., Ltd. IPS816-xxB IPS816 series of silicon controlled rectifiers are specifically designed for medium power switching and phase control applications. High current density due to double mesa technology SIPOS and Glass passivation technology used has reliable operation up to 125℃ junction temperature. Low Igt parts available. IPS816 series are suitable for general purpose applications, a high gate sensitivity is required. MAIN FEATURES Symbol Value Unit IT(RMS) 16 A IT(AV) 10 A VDRM / VRRM 800 V VTM ≤ 1.6 V TO-220B ABSOLUTE MAXIMUM RATINGS Parameter Symbol Value Unit IT(RMS) 16 A Average on–state current (Tc = 105℃, 180º conduction half sine wave) IT(AV) 10 A Storage Junction Temperature Range Operating Junction Temperature Range Tstg Tj -40 to +150 -40 to +110 ℃ VDRM VRRM 800 800 V VDSM VRSM 900 900 V ITSM 160 A I²t 128 A²s dI/dt 50 A/us IGM 4 A PG(AV) 1 W RMS on–state current (Tc = 105℃, 180º conduction half sine wave) Repetitive Peak Off-state Voltage Repetitive Peak Reverse Voltage Tj = 25℃ Tj = 25℃ Non Repetitive Peak Off-state Voltage Non Repetitive Peak Reverse Voltage Tj = 25℃ Tj = 25℃ One cycle Non Repetitive surge current ( Half Cycle, 50Hz) I²t Value for fusing (tp = 10ms, Half Cycle) Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃) Peak gate current tp = 20us, Tj = 125℃ Average gate power dissipation Tj = 125℃ 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 1 IPS816-xxB ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified) IPS816-xxB Symbol Test Condition Unit 25 IGT Required DC gate current to trigger at 25℃ at - 40℃ at 125℃ MAX 25 55 15 mA VGT Required DC voltage to trigger at 25℃ (anode supply = 6V, resistive load) at - 40℃ at 125℃ MAX 1.3 2.0 1.1 V MAX 0.2 V VGD DC gate voltage not to trigger (Tj = 125℃, VDRM = rated value) IL IG = 1.2 IGT MAX 60 mA IH Holding current MAX 40 mA VD = 67% VDRM gate open Tj = 125 ℃ MIN 500 V/us dV/dt STATIC CHARACTERISTICS Symbol VTM Test Conditions Value (MAX) Unit ITM = 24A, tp = 380uS Tj = 25℃ 1.6 V VD = VDRM Tj = 25℃ 5 uA VR = VRRM Tj = 125℃ 2 mA Value Unit 1.1 ℃/W IDRM / IRRM THERMAL RESISTANCES Symbol Rth (j – c) Parameter Junction to case TO-220B 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 2 IPS816-xxB PACKAGE MECHANICAL DATA TO-220B Millimeters Min Typ Max A 4.4 4.6 B 0.61 0.88 C 0.46 0.70 C2 1.23 1.32 C3 2.4 2.72 D 8.6 9.7 E 9.8 10.4 F 6.2 6.6 G 4.8 5.4 H 28 29.8 L1 3.75 L2 1.14 1.7 L3 2.65 2.95 V 40º 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 3 IPS816-xxB 4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected] 4