IP IPS816-25B Silicon controlled rectifier Datasheet

IP Semiconductor Co., Ltd.
IPS816-xxB
IPS816 series of silicon controlled rectifiers are
specifically designed for medium power switching and
phase control applications.
High current density due to double mesa technology
SIPOS and Glass passivation technology used has
reliable operation up to 125℃ junction temperature.
Low Igt parts available.
IPS816 series are suitable for general purpose
applications, a high gate sensitivity is required.
MAIN FEATURES
Symbol
Value
Unit
IT(RMS)
16
A
IT(AV)
10
A
VDRM / VRRM
800
V
VTM
≤ 1.6
V
TO-220B
ABSOLUTE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
IT(RMS)
16
A
Average on–state current
(Tc = 105℃, 180º conduction half sine wave)
IT(AV)
10
A
Storage Junction Temperature Range
Operating Junction Temperature Range
Tstg
Tj
-40 to +150
-40 to +110
℃
VDRM
VRRM
800
800
V
VDSM
VRSM
900
900
V
ITSM
160
A
I²t
128
A²s
dI/dt
50
A/us
IGM
4
A
PG(AV)
1
W
RMS on–state current (Tc = 105℃, 180º conduction half sine wave)
Repetitive Peak Off-state Voltage
Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
Non Repetitive Peak Off-state Voltage
Non Repetitive Peak Reverse Voltage
Tj = 25℃
Tj = 25℃
One cycle Non Repetitive surge current ( Half Cycle, 50Hz)
I²t Value for fusing
(tp = 10ms, Half Cycle)
Critical rate of rise of turned – on current (IG = 2 X IGT, Tj = 125℃)
Peak gate current
tp = 20us, Tj = 125℃
Average gate power dissipation
Tj = 125℃
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
1
IPS816-xxB
ELECTRICAL CHARACTERISTICS (Tj = 25 ℃ unless otherwise specified)
IPS816-xxB
Symbol
Test Condition
Unit
25
IGT
Required DC gate current to trigger at 25℃
at - 40℃
at 125℃
MAX
25
55
15
mA
VGT
Required DC voltage to trigger
at 25℃
(anode supply = 6V, resistive load) at - 40℃
at 125℃
MAX
1.3
2.0
1.1
V
MAX
0.2
V
VGD
DC gate voltage not to trigger
(Tj = 125℃, VDRM = rated value)
IL
IG = 1.2 IGT
MAX
60
mA
IH
Holding current
MAX
40
mA
VD = 67% VDRM gate open Tj = 125 ℃
MIN
500
V/us
dV/dt
STATIC CHARACTERISTICS
Symbol
VTM
Test Conditions
Value
(MAX)
Unit
ITM = 24A, tp = 380uS
Tj = 25℃
1.6
V
VD = VDRM
Tj = 25℃
5
uA
VR = VRRM
Tj = 125℃
2
mA
Value
Unit
1.1
℃/W
IDRM / IRRM
THERMAL RESISTANCES
Symbol
Rth (j – c)
Parameter
Junction to case
TO-220B
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
2
IPS816-xxB
PACKAGE MECHANICAL DATA
TO-220B
Millimeters
Min
Typ
Max
A
4.4
4.6
B
0.61
0.88
C
0.46
0.70
C2
1.23
1.32
C3
2.4
2.72
D
8.6
9.7
E
9.8
10.4
F
6.2
6.6
G
4.8
5.4
H
28
29.8
L1
3.75
L2
1.14
1.7
L3
2.65
2.95
V
40º
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
TEL : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
3
IPS816-xxB
4F, Cheong won B/D, 269 Hyoje-dong, Jongno-gu, Seoul, 110-480 Korea
Tel : +82-70-7574-2839, Fax : +82-2-6280-6382, [email protected]
4
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