PHILIPS BU1706AX Silicon diffused power transistor Datasheet

Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack
envelope intended for use in high frequency electronic lighting ballast applications.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
VCESM
VCEO
IC
ICM
Ptot
VCEsat
ICsat
tf
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
VBE = 0 V
1.5
0.25
1750
850
5
8
32
1.0
0.6
V
V
A
A
W
V
A
µs
PINNING - SOT186A
PIN
Ths ≤ 25 ˚C
IC = 1.5 A; IB = 0.3 A
ICM = 1.5 A; IB(on) = 0.3 A
PIN CONFIGURATION
SYMBOL
DESCRIPTION
c
case
1
base
2
collector
3
emitter
b
case isolated
e
1 2 3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
VCESM
VCEO
IC
ICM
IB
IBM
-IB(AV)
-IBM
Ptot
Tstg
Tj
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Reverse base current
Reverse base current peak value
Total power dissipation
Storage temperature
Junction temperature
VBE = 0 V
average over any 20ms period
Ths ≤ 25 ˚C
MIN.
MAX.
UNIT
-40
-
1750
850
5
8
3
5
100
4
32
150
150
V
V
A
A
A
A
mA
A
W
˚C
˚C
TYP.
MAX.
UNIT
-
4.0
K/W
55
-
K/W
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
Rth j-hs
Junction to heatsink
with heatsink compound
Rth j-a
Junction to ambient
in free air
April 1994
1
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all
three terminals to external
heatsink
f = 50-60 Hz; sinusoidal
waveform;
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN.
TYP.
-
MAX.
UNIT
2500
V
-
10
-
pF
MIN.
TYP.
MAX.
UNIT
-
-
1.0
20
2.0
mA
µA
mA
750
-
1
-
mA
V
8
12
5
18
7
1.0
1.3
35
-
V
V
TYP.
MAX.
UNIT
1.1
5
0.75
1.5
6.5
1.0
µs
µs
µs
2.0
0.25
3.0
0.6
µs
µs
2.2
0.2
3.3
0.7
µs
µs
STATIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
1
ICES
ICES
ICES
Collector cut-off current
IEBO
VCEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
VCEsat
VBEsat
hFE
hFE
hFE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
VBE = 0 V; VCE = VCESMmax
VBE = 0 V; VCE = 1500 V
VBE = 0 V; VCE = VCESMmax;
Tj = 125 ˚C
VEB = 12 V; IC = 0 A
IB = 0 A; IC = 100 mA;
L = 25 mH
IC = 1.5 A; IB = 0.3 A
IC = 1.5 A; IB = 0.3 A
IC = 5 mA; VCE = 10 V
IC = 400 mA; VCE = 3 V
IC = 1.5 A; VCE = 1 V
DYNAMIC CHARACTERISTICS
Ths = 25 ˚C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
ton
ts
tf
Switching times (resistive load)
Turn-on time
Turn-off storage time
Turn-off fall time
ICon = 1.5 A; IBon = -IBoff = 0.3 A
Switching times (inductive load)
ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-VBB = 5 V
ts
tf
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
ts
tf
Turn-off storage time
Turn-off fall time
ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH;
-VBB = 5 V; Tj = 100 ˚C
1 Measured with half sine-wave voltage (curve tracer).
April 1994
2
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AX
ICon
90 %
+ 50v
100-200R
90 %
IC
10 %
ts
Horizontal
ton
IBon
IB
Vertical
tf
toff
Oscilloscope
10 %
300R
1R
tr
30ns
6V
30-60 Hz
-IBoff
Fig.4. Switching times waveforms with resistive load.
Fig.1. Test circuit for VCEOsust.
VCC
IC / mA
LC
250
200
IBon
LB
100
T.U.T.
-VBB
0
min
VCE / V
VCEOsust
Fig.5. Test circuit inductive load.
VCC = 300 V; -VBE = 5 V; LB = 1 uH
Fig.2. Oscilloscope display for VCEOsust.
VCC
VCC
RL
VIM
LC
RB
0
T.U.T.
IBend
tp
-VBB
T
T.U.T.
CFB
Fig.6. Test Circuit RBSOA.
VCC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V;
LB = 1 µH
Fig.3. Test circuit resistive load. VIM = -6 to +8 V
VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01.
RB and RL calculated from ICon and IBon requirements.
April 1994
VCL
LB
3
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AX
ICon
90 %
1.2
BU1706A
VBESAT / V
1.1
IC
Tj = 25 C
1
Tj = 125 C
0.9
0.8
10 %
tf
ts
toff
IC/IB =
t
0.7
IBon
IB
t
4
0.6
5
0.5
6
0.4
0.1
1
IC / A
-IBoff
Fig.10. Typical base-emitter saturation voltage.
VBEsat = f(IC); parameter IC/IB
Fig.7. Switching times waveforms with inductive load.
Normalised Power Derating
PD%
120
1
with heatsink compound
110
VCESAT / V
BU1706A
IC/IB =
0.9
100
90
6
0.8
5
80
70
0.7
60
0.5
50
0.4
Tj = 25 C
0.3
Tj = 125 C
4
0.6
40
30
20
0.2
10
0.1
0
0
20
40
60
80
Ths / C
100
120
0
140
Fig.8. Normalised power dissipation.
PD% = 100⋅PD/PD 25 ˚C = f (Ths)
10
Zth / (K/W)
10
0.1
1
IC / A
10
Fig.11. Typical collector-emitter saturation voltage.
VCEsat = f(IC); parameter IC/IB
BU1706AX
1.2
BU1706A
VBESAT / V
Tj = 25 C
1
0.1
0.5
1.1
0.2
0.1
0.05
1
Tj = 125 C
0.9
0.02
PD
tp
D=
IC =
3A
tp
T
0.8
t
0.7
0.01
D=0
0.001
T
0.6
1u
10u 100u 1m 10m 100m
t/s
1
10
100
0
Fig.9. Transient thermal impedance.
Zth j-hs = f(t); parameter D = tp/T
April 1994
2A
1.5 A
0.5 A
1
2
IB / A
3
4
Fig.12. Typical base-emitter saturation voltage.
VBEsat = f(IB); parameter IC
4
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AX
IC / A
10
100
h FE
BU1706A
I CM
5V
10
I CDC
1V
Tj = 25 C
1
Tj = 125 C
1
Ptot
0.1
0.01
0.1
0.1
1
10
IC / A
tp =
Fig.15. Typical DC current gain.
hFE = f(IC); parameter VCE
100 us
6
1 ms
IC / A
BU1706A
5
10 ms
4
DC
3
0.01
1
10 VCE / V 100
2
1000
Fig.13. Forward bias safe operating area. Ths = 25 ˚C
I
II
NB:
10
1
Region of permissible DC operation.
Extension for repetitive pulse operation.
Mounted with heatsink compound and
30 ± 5 newton force on the centre of the
envelope.
VCESAT / V
0
0
400
800
1200
VCE / V
1600
2000
Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax
BU1706A
1
3A
2A
1.5 A
0.1
IC = 0.5A
Tj = 25 C
Tj = 125 C
0.01
0.01
0.1
1
10
IB / A
Fig.14. Typical collector-emitter saturation voltage.
VCEsat = f(IB); parameter IC
April 1994
5
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AX
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
10.3
max
4.6
max
3.2
3.0
2.9 max
2.8
Recesses (2x)
2.5
0.8 max. depth
6.4
15.8
19
max. max.
15.8
max
seating
plane
3 max.
not tinned
3
2.5
13.5
min.
1
0.4
2
3
M
1.0 (2x)
0.6
2.54
0.9
0.7
0.5
2.5
5.08
1.3
Fig.17. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
April 1994
6
Rev 1.000
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706AX
DEFINITIONS
Data sheet status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
 Philips Electronics N.V. 1997
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
April 1994
7
Rev 1.000
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