Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in high frequency electronic lighting ballast applications. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT VCESM VCEO IC ICM Ptot VCEsat ICsat tf Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Fall time VBE = 0 V 1.5 0.25 1750 850 5 8 32 1.0 0.6 V V A A W V A µs PINNING - SOT186A PIN Ths ≤ 25 ˚C IC = 1.5 A; IB = 0.3 A ICM = 1.5 A; IB(on) = 0.3 A PIN CONFIGURATION SYMBOL DESCRIPTION c case 1 base 2 collector 3 emitter b case isolated e 1 2 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System (IEC 134) SYMBOL PARAMETER CONDITIONS VCESM VCEO IC ICM IB IBM -IB(AV) -IBM Ptot Tstg Tj Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Base current (DC) Base current peak value Reverse base current Reverse base current peak value Total power dissipation Storage temperature Junction temperature VBE = 0 V average over any 20ms period Ths ≤ 25 ˚C MIN. MAX. UNIT -40 - 1750 850 5 8 3 5 100 4 32 150 150 V V A A A A mA A W ˚C ˚C TYP. MAX. UNIT - 4.0 K/W 55 - K/W THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS Rth j-hs Junction to heatsink with heatsink compound Rth j-a Junction to ambient in free air April 1994 1 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS Visol R.M.S. isolation voltage from all three terminals to external heatsink f = 50-60 Hz; sinusoidal waveform; R.H. ≤ 65% ; clean and dustfree Cisol Capacitance from T2 to external f = 1 MHz heatsink MIN. TYP. - MAX. UNIT 2500 V - 10 - pF MIN. TYP. MAX. UNIT - - 1.0 20 2.0 mA µA mA 750 - 1 - mA V 8 12 5 18 7 1.0 1.3 35 - V V TYP. MAX. UNIT 1.1 5 0.75 1.5 6.5 1.0 µs µs µs 2.0 0.25 3.0 0.6 µs µs 2.2 0.2 3.3 0.7 µs µs STATIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS 1 ICES ICES ICES Collector cut-off current IEBO VCEOsust Emitter cut-off current Collector-emitter sustaining voltage VCEsat VBEsat hFE hFE hFE Collector-emitter saturation voltage Base-emitter saturation voltage DC current gain VBE = 0 V; VCE = VCESMmax VBE = 0 V; VCE = 1500 V VBE = 0 V; VCE = VCESMmax; Tj = 125 ˚C VEB = 12 V; IC = 0 A IB = 0 A; IC = 100 mA; L = 25 mH IC = 1.5 A; IB = 0.3 A IC = 1.5 A; IB = 0.3 A IC = 5 mA; VCE = 10 V IC = 400 mA; VCE = 3 V IC = 1.5 A; VCE = 1 V DYNAMIC CHARACTERISTICS Ths = 25 ˚C unless otherwise specified SYMBOL PARAMETER CONDITIONS ton ts tf Switching times (resistive load) Turn-on time Turn-off storage time Turn-off fall time ICon = 1.5 A; IBon = -IBoff = 0.3 A Switching times (inductive load) ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH; -VBB = 5 V ts tf Turn-off storage time Turn-off fall time Switching times (inductive load) ts tf Turn-off storage time Turn-off fall time ICon = 1.5 A; IBon = 0.3 A; LB = 1 µH; -VBB = 5 V; Tj = 100 ˚C 1 Measured with half sine-wave voltage (curve tracer). April 1994 2 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX ICon 90 % + 50v 100-200R 90 % IC 10 % ts Horizontal ton IBon IB Vertical tf toff Oscilloscope 10 % 300R 1R tr 30ns 6V 30-60 Hz -IBoff Fig.4. Switching times waveforms with resistive load. Fig.1. Test circuit for VCEOsust. VCC IC / mA LC 250 200 IBon LB 100 T.U.T. -VBB 0 min VCE / V VCEOsust Fig.5. Test circuit inductive load. VCC = 300 V; -VBE = 5 V; LB = 1 uH Fig.2. Oscilloscope display for VCEOsust. VCC VCC RL VIM LC RB 0 T.U.T. IBend tp -VBB T T.U.T. CFB Fig.6. Test Circuit RBSOA. VCC = 150 V; -VBB = 5 V; LC = 2 mH; VCL ≤ 1500 V; LB = 1 µH Fig.3. Test circuit resistive load. VIM = -6 to +8 V VCC = 250 V; tp = 20 µs; δ = tp / T = 0.01. RB and RL calculated from ICon and IBon requirements. April 1994 VCL LB 3 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX ICon 90 % 1.2 BU1706A VBESAT / V 1.1 IC Tj = 25 C 1 Tj = 125 C 0.9 0.8 10 % tf ts toff IC/IB = t 0.7 IBon IB t 4 0.6 5 0.5 6 0.4 0.1 1 IC / A -IBoff Fig.10. Typical base-emitter saturation voltage. VBEsat = f(IC); parameter IC/IB Fig.7. Switching times waveforms with inductive load. Normalised Power Derating PD% 120 1 with heatsink compound 110 VCESAT / V BU1706A IC/IB = 0.9 100 90 6 0.8 5 80 70 0.7 60 0.5 50 0.4 Tj = 25 C 0.3 Tj = 125 C 4 0.6 40 30 20 0.2 10 0.1 0 0 20 40 60 80 Ths / C 100 120 0 140 Fig.8. Normalised power dissipation. PD% = 100⋅PD/PD 25 ˚C = f (Ths) 10 Zth / (K/W) 10 0.1 1 IC / A 10 Fig.11. Typical collector-emitter saturation voltage. VCEsat = f(IC); parameter IC/IB BU1706AX 1.2 BU1706A VBESAT / V Tj = 25 C 1 0.1 0.5 1.1 0.2 0.1 0.05 1 Tj = 125 C 0.9 0.02 PD tp D= IC = 3A tp T 0.8 t 0.7 0.01 D=0 0.001 T 0.6 1u 10u 100u 1m 10m 100m t/s 1 10 100 0 Fig.9. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T April 1994 2A 1.5 A 0.5 A 1 2 IB / A 3 4 Fig.12. Typical base-emitter saturation voltage. VBEsat = f(IB); parameter IC 4 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX IC / A 10 100 h FE BU1706A I CM 5V 10 I CDC 1V Tj = 25 C 1 Tj = 125 C 1 Ptot 0.1 0.01 0.1 0.1 1 10 IC / A tp = Fig.15. Typical DC current gain. hFE = f(IC); parameter VCE 100 us 6 1 ms IC / A BU1706A 5 10 ms 4 DC 3 0.01 1 10 VCE / V 100 2 1000 Fig.13. Forward bias safe operating area. Ths = 25 ˚C I II NB: 10 1 Region of permissible DC operation. Extension for repetitive pulse operation. Mounted with heatsink compound and 30 ± 5 newton force on the centre of the envelope. VCESAT / V 0 0 400 800 1200 VCE / V 1600 2000 Fig.16. Reverse bias safe operating area. Tj ≤ Tjmax BU1706A 1 3A 2A 1.5 A 0.1 IC = 0.5A Tj = 25 C Tj = 125 C 0.01 0.01 0.1 1 10 IB / A Fig.14. Typical collector-emitter saturation voltage. VCEsat = f(IB); parameter IC April 1994 5 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 4.6 max 3.2 3.0 2.9 max 2.8 Recesses (2x) 2.5 0.8 max. depth 6.4 15.8 19 max. max. 15.8 max seating plane 3 max. not tinned 3 2.5 13.5 min. 1 0.4 2 3 M 1.0 (2x) 0.6 2.54 0.9 0.7 0.5 2.5 5.08 1.3 Fig.17. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". April 1994 6 Rev 1.000 Philips Semiconductors Product specification Silicon Diffused Power Transistor BU1706AX DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. April 1994 7 Rev 1.000