APT10045B2FLL
APT10045LFLL
1000V 23A 0.450Ω
R
POWER MOS 7
FREDFET
B2FLL
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
TO-264
LFLL
• Increased Power Dissipation
• Easier To Drive
• Popular T-MAX™ or TO-264 Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
T-MAX™
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT10045
UNIT
1000
Volts
23
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
565
Watts
Linear Derating Factor
4.52
W/°C
VGSM
PD
TJ,TSTG
92
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
°C
300
23
(Repetitive and Non-Repetitive)
1
Amps
50
mJ
4
2500
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
TYP
MAX
UNIT
1000
Volts
23
Amps
(VGS = 10V, 11.5A)
0.450
Zero Gate Voltage Drain Current (VDS = 1000V, VGS = 0V)
250
Ohms
µA
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
3-2003
BVDSS
Characteristic / Test Conditions
050-7039 Rev C
Symbol
APT10045B2FLL - LFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Input Capacitance
VGS = 0V
Coss
Output Capacitance
VDS = 25V
Crss
3
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
ID = 23A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
td(off)
VDD = 500V
Turn-off Delay Time
tf
ID = 23A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
380
ID = 23A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
ns
639
VDD = 670V, VGS = 15V
Eon
nC
8
RG = 0.6Ω
Eon
UNIT
pF
120
154
26
97
10
5
30
VGS = 10V
td(on)
MAX
4350
715
VDD = 500V
Gate-Source Charge
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
MIN
Test Conditions
C iss
µJ
1046
VDD = 670V VGS = 15V
451
ID = 23A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
23
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
92
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -23A)
1.3
Volts
dv/
Peak Diode Recovery
18
V/ns
dt
dv/
dt
5
Reverse Recovery Time
(IS = -23A, di/dt = 100A/µs)
Tj = 25°C
340
Tj = 125°C
640
Q rr
Reverse Recovery Charge
(IS = -23A, di/dt = 100A/µs)
Tj = 25°C
1.78
Tj = 125°C
4.47
IRRM
Peak Recovery Current
(IS = -23A, di/dt = 100A/µs)
Tj = 25°C
11.4
Tj = 125°C
16.4
t rr
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.22
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.20
0.7
0.15
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7039 Rev C
3-2003
0.25
0.10
0.3
t1
t2
Duty Factor D = t1/t2
0.05
0.1
SINGLE PULSE
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 9.45mH, RG = 25Ω, Peak IL = 23A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID23A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
UNIT
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT10045B2FLL - LFLL
60
0.0893
Power
(Watts)
0.0842
0.0485
0.0102F
0.106F
0.979F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. ( ”C)
50
7V
VGS =15 & 8V
40
6.5V
30
6V
20
5.5V
10
5V
Case temperature
0
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
50
40
30
20
TJ = +125°C
10
0
TJ = -55°C
TJ = +25°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
20
15
10
5
0
25
1.30
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
I
D
V
1.10
1.05
1.00
0.95
0.90
0.85
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 11.5A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
0.0
-50
NORMALIZED TO
= 10V @ 11.5A
GS
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
25
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
3-2003
70
050-7039 Rev C
ID, DRAIN CURRENT (AMPERES)
80
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
APT10045B2FLL - LFLL
Typical Performance Curves
20,000
10,000
OPERATION HERE
LIMITED BY RDS (ON)
Ciss
100µS
10
TC =+25°C
TJ =+150°C
SINGLE PULSE
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
= 23A
12
VDS=200V
VDS=500V
VDS=800V
8
Coss
Crss
100
10mS
1
10
100
1000
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
1,000
1mS
1
I
C, CAPACITANCE (pF)
50
4
0
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
92
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
60
160
V
140
G
50
= 670V
= 5Ω
T = 125°C
tf
J
120
L = 100µH
V
100
DD
R
G
40
= 670V
tr and tf (ns)
td(on) and td(off) (ns)
DD
R
td(off)
= 5Ω
T = 125°C
J
80
L = 100µH
60
30
20
tr
40
10
td(on)
20
0
0
0
10
20
30
40
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
0
20
30
40
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
2000
4000
DD
R
G
= 670V
= 5Ω
SWITCHING ENERGY (µJ)
3-2003
J
1500
3500
Eon
T = 125°C
L = 100µH
EON includes
diode reverse recovery.
1000
500
Eoff
0
SWITCHING ENERGY (µJ)
V
050-7039 Rev C
10
Eoff
3000
2500
Eon
2000
1500
V
I
1000
DD
D
= 670V
= 23A
T = 125°C
J
L = 100µH
EON includes
500
diode reverse recovery.
0
0
5
10
15
20
25
30
35 40
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT10045B2FLL - LFLL
Gate Voltage
10 %
90%
Gate Voltage
T = 125 C
J
td(on)
T = 125 C
J
t
d(off)
tr
Drain Voltage
Drain Current
5%
90%
5%
90%
10%
Drain Voltage
10 %
Drain Current
0
tf
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT15DF120B
V CE
IC
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
3-2003
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7039 Rev C
Drain
Drain
20.80 (.819)
21.46 (.845)