OPNEXT HL6321G Algainp laser diode Datasheet

HL6321G/22G
ODE-208-028A (Z)
Rev.1
Oct. 24, 2006
AlGaInP Laser Diodes
Description
The HL6321G/22G are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers and optical equipment for measurement.
Features
•
•
•
•
•
•
Package Type
• HL6321G/22G: G2
Visible light output: 635 nm Typ
Single longitudinal mode
Optical output power: 15 mW CW
Low operating current: 100 mA Max
Low operating voltage: 2.7 V Max
TM mode oscillation
Internal Circuit
• HL6321G
1
Internal Circuit
• HL6322G
1
3
PD
LD
3
PD
LD
2
2
Absolute Maximum Ratings
(TC = 25°C)
Item
Optical output power
PO
Symbol
Ratings
15
Unit
mW
LD reverse voltage
PD reverse voltage
VR(LD)
VR(PD)
2
30
V
V
Operating temperature
Storage temperature
Topr
Tstg
–10 to +50
–40 to +85
°C
°C
Optical and Electrical Characteristics
(TC = 25°C)
Item
Threshold current
Symbol
Ith
Min
20
Typ
55
Max
70
Unit
mA
Operating current
Operating voltage
—
IOP
VOP
—
—
85
—
100
2.7
mA
V
PO = 15 mW
PO = 15 mW
Slope efficiency
Beam divergence
parallel to the junction
ηs
θ//
0.3
6
—
8
0.7
11
mW/mA
°
Beam divergence
perpendicular to the junction
Lasing wavelength
θ⊥
25
30
36
°
PO = 15 mW
λp
630
635
640
nm
PO = 15 mW
Monitor current
IS
0.1
0.2
0.4
mA
PO = 15 mW, VR(PD) = 5 V
Rev.1 Oct. 24, 2006 page 1 of 4
Test Conditions
9 (mW) / (I(12mW) – I(3mW))
PO = 15 mW
HL6321G/22G
Threshold Current vs. Case Temperature
200
Optical Output Power vs. Foward Current
15
TC = -10°C
Threshould current, Ith (mA)
Optical output power, PO (mW)
Typical Characteristic Curves
TC = 10°C
10
25°C
50°C
5
0
50
100
Foward current, IF (mA)
0
100
50
20
-10
150
Slope Efficiency vs. Case Temperature
0.4
PO = 15 mW
VR(PD) = 5 V
0.8
Monitor current, IS (mA)
Slope efficiency, ηs (mW/mA)
50
Monitor Current vs. Case Temprature
1.0
0.6
0.4
0.2
0
-10
0
10
20
30
40
Case temperature, TC (°C)
0.3
0.2
0.1
0
-10
50
Lasing Wavelength vs. Case Temperature
650
PO = 15 mW
30
40
20
0
10
Case temperature, TC (°C)
50
Far Field Pattern
1.0
645
Relative intensity
Lasing wavelength, λp (nm)
0
20
30
40
10
Case temperature, TC (°C)
640
Perpendicular
0.6
0.4
0.2
Parallel
0
-40 -30 -20 -10 0 10 20 30
Angle, θ ( ° )
635
630
-10
PO = 15mW
0.8 TC = 25°C
30
40
20
0
10
Case temperature, TC (°C)
Rev.1 Oct. 24, 2006 page 2 of 4
50
40
HL6321G/22G
Package Dimensions
As of July, 2002
0.4 +0.1
–0
Unit: mm
φ 9.0 +0
–0.025
1.0 ± 0.1
Glass
φ 7.2 +0.3
–0.2
φ 6.2 ± 0.2
(φ2.0)
3.5 ± 0.2
9±1
2.45
Emitting Point
3 – φ 0.45 ± 0.1
1
2
1.5 ± 0.1
0.3
(90˚)
(0.65)
3
3
1
2
φ 2.54 ± 0.35
OPJ Code
JEDEC
JEITA
Mass (reference value)
Rev.1 Oct. 24, 2006 page 3 of 4
LD/G2
—
—
1.1 g
HL6321G/22G
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants licenses of any our rights or any third party’s patent, copyright,
trademark, or other intellectual property rights for information contained in this document. OPJ bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the
latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales
office before using the product in an application that demands especially high quality and reliability or where its
failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace,
aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for
life support.
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics.
OPJ bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the
guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and
employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily
injury, fire or other consequential damage due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written
approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses.
Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical
experiments, when you handle the product.
When disposing of the product, please follow the laws of your country and separate it from other waste such as
industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ
unless otherwise specified.
Sales Offices
Device Business Unit Opnext Japan, Inc.
Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan
Tel: (03) 3865-5591
For the detail of Opnext, Inc., see the following homepage:
Japan (Japanese)
Other area (English)
http://www.opnext.com/jp/products/
http://www.opnext.com/products/
©2007 Opnext Japan, Inc., All rights reserved. Printed in Japan.
Colophon 2.0
Rev.1 Oct. 24, 2006 page 4 of 4
Similar pages