Infineon BG3230R Dual n-channel mosfet tetrode Datasheet

BG3230_BG3230R
4
DUAL N-Channel MOSFET Tetrode
5
6
• Low noise gain controlled input stages of UHFand VHF-tuners with 5V supply voltage
• Two AGC amplifiers in one single package
2
• Integrated stabilized bias network
3
1
VPS05604
• Integrated gate protection diodes
• High gain, low noise figure
• Improved cross modulation at gain reduction
• High AGC-range
BG3230
6
BG3230R
6
5
4
Drain
AGC
HF
Input
4
5
A
B
A
1
B
2
1
3
HF Output
+ DC
G2
G1
GND
2
EHA07215
3
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type
Package
Pin Configuration
Marking
BG3230
SOT363
1=G1
2=G2
3=D
4=D
5=S
6=G1
KBs
BG3230R
SOT363
1=G1
2=S
3=D
4=D
5=G2
6=G1
KIs
180° rotated tape loading orientation available
Maximum Ratings
Parameter
Symbol
Drain-source voltage
VDS
Continuous drain current
ID
Gate 1/ gate 2-source current
±IG1/2SM
1
Gate 1/ gate 2-source voltage
±V G1/G2S
6
Total power dissipation
Ptot
160
Storage temperature
Tstg
-55 ... 150
Channel temperature
Tch
150
Value
8
25
Unit
V
mA
V
mW
°C
Thermal Resistance
Parameter
Symbol
Value
Unit
Channel - soldering point1)
Rthchs
≤ 280
K/W
1For calculation of R
thJA please refer to Application Note Thermal Resistance
1
Feb-27-2004
BG3230_BG3230R
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
V(BR)DS
12
-
-
+V(BR)G1SS
6
-
15
±V (BR)G2SS
6
-
15
+IG1SS
-
-
50
µA
±IG2SS
-
-
50
nA
IDSS
-
-
100
µA
IDSO
-
13
-
mA
VG2S(p)
-
1
-
V
DC Characteristics
Drain-source breakdown voltage
V
ID = 100 µA, VG1S = 0 , VG2S = 0
Gate1-source breakdown voltage
+IG1S = 10 mA, V G2S = 0 , VDS = 0
Gate2 source breakdown voltage
±IG2S = 10 mA, VG1S = 0 , V DS = 0
Gate1-source leakage current
VG1S = 6 V, VG2S = 0
Gate 2 source leakage current
±V G2S = 6 V, VG1S = 0 , V DS = 0
Drain current
VDS = 5 V, VG1S = 0 , VG2S = 4 V
Operating current (selfbiased)
VDS = 5 V, VG2S = 4 V
Gate2-source pinch-off voltage
VDS = 5 V, I D = 100 µA
2
Feb-27-2004
BG3230_BG3230R
Electrical Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
g fs
-
33
-
mS
Cg1ss
-
1.9
-
pF
Cdss
-
1.1
-
AC Characteristics - (verified by random sampling)
Forward transconductance
VDS = 5 V, V G2S = 4 V
Gate1 input capacitance
VDS = 5 V, V G2S = 4 V, f = 1 MHz
Output capacitance
VDS = 5 V, V G2S = 4 V, f = 100 MHz
Power gain (self biased)
dB
Gp
VDS = 5 V, V G2S = 4 V, f = 800 MHz
-
24
-
VDS = 5 V, V G2S = 4 V, f = 45 MHz
-
31
-
Noise figure (self biased)
dB
F
VDS = 5 V, V G2S = 4 V, f = 800 MHz
-
1.3
-
VDS = 5 V, V G2S = 4 V, f = 45 MHz
-
1.7
-
45
-
-
∆G p
Gain control range
VDS = 5 V, V G2S = 4...0 V, f = 800 MHz
Cross-modulation k=1%, fw=50MHz, funw=60MHz Xmod
-
AGC = 0 dB
90
-
-
AGC = 10 dB
-
87
-
AGC = 40 dB
96
100
-
3
Feb-27-2004
BG3230_BG3230R
Total power dissipation Ptot = ƒ(TS)
Output characteristics ID = ƒ(V DS)
300
14
mA
mW
2V
12
11
ID
P tot
10
200
1.9V
9
8
150
7
1.8V
6
5
100
1.7V
4
3
50
1.6V
2
1
0
0
20
40
60
80
100
120 °C
0
0
150
1
2
3
4
5
6
7
V
8
10
VDS
TS
Gate 1 forward transconductance
Drain current ID = ƒ(V G1S)
g fs = ƒ(ID)
VDS = 5V, VG2S = Parameter
VDS = 5V
VG2S = Parameter
35
26
mA
4V
mS
22
4V
20
25
3.5V
ID
gfs
18
20
3.5V
3V
16
14
12
15
10
3V
2.5V
8
10
6
4
5
2V
2
0
0
4
8
12
16
20
mA
0
0
26
ID
0.4
0.8
1.2
1.6
2
V
2.8
VG1S
4
Feb-27-2004
BG3230_BG3230R
AGC characteristic AGC = ƒ(VG2S)
f = 200 MHz
AGC characteristic AGC = ƒ(V G2S)
f = 800 MHz
0
0
dB
dB
-10
-15
-20
-30
AGC
AGC
-20
-25
-40
-30
-50
-35
-40
-60
-45
-50
-70
-55
-80
-90
0
-60
0.5
1
1.5
2
2.5
V
3
-65
0
4
VG2
0.5
1
1.5
2
2.5
3
V
4
VG2
Crossmodulation Vunw = (AGC)
VDS = 5 V, Rg1 = 68 kΩ
120
Vunw
dBµV
100
90
80
0
10
20
30
dB
50
AGC
5
Feb-27-2004
BG3230_BG3230R
Cossmodulation test circuit
VAGC
VDS
4n7
R1
10 kOhm
2.2 µH
4n7
4n7
RL
50 Ohm
4n7
RGEN
50 Ohm
RG1
50 Ohm
VGG
6
Feb-27-2004
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