Catalyst CAT28C16ANI-20 16k-bit cmos parallel e2prom Datasheet

CAT28C16A
16K-Bit CMOS PARALLEL E2PROM
FEATURES
■ Fast Read Access Times: 200 ns
■ End of Write Detection: DATA Polling
■ Low Power CMOS Dissipation:
■ Hardware Write Protection
–Active: 25 mA Max.
–Standby: 100 µA Max.
■ CMOS and TTL Compatible I/O
■ 10,000 Program/Erase Cycles
■ Simple Write Operation:
■ 10 Year Data Retention
–On-Chip Address and Data Latches
–Self-Timed Write Cycle with Auto-Clear
■ Commercial, Industrial and Automotive
Temperature Ranges
■ Fast Write Cycle Time: 10ms Max
DESCRIPTION
The CAT28C16A is a fast, low power, 5V-only CMOS
Parallel E2PROM organized as 2K x 8-bits. It requires a
simple interface for in-system programming. On-chip
address and data latches, self-timed write cycle with
auto-clear and VCC power up/down write protection
eliminate additional timing and protection hardware.
DATA Polling signals the start and end of the self-timed
write cycle. Additionally, the CAT28C16A features hardware write protection.
The CAT28C16A is manufactured using Catalyst’s advanced CMOS floating gate technology. It is designed to
endure 10,000 program/erase cycles and has a data
retention of 10 years. The device is available in JEDEC
approved 24-pin DIP and SOIC or 32-pin PLCC packages.
BLOCK DIAGRAM
A4–A10
ADDR. BUFFER
& LATCHES
ROW
DECODER
VCC
INADVERTENT
WRITE
PROTECTION
HIGH VOLTAGE
GENERATOR
CE
OE
WE
CONTROL
LOGIC
2,048 x 8
E2PROM
ARRAY
I/O BUFFERS
TIMER
DATA POLLING
I/O0–I/O7
A0–A3
ADDR. BUFFER
& LATCHES
COLUMN
DECODER
5089 FHD F02
© 1998 by Catalyst Semiconductor, Inc.
Characteristics subject to change without notice
1
Doc. No. 25033-00 2/98
CAT28C16A
PIN CONFIGURATION
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
24
23
22
21
20
19
18
17
16
15
14
13
VCC
A8
A9
WE
OE
A10
CE
I/O7
I/O6
I/O5
I/O4
I/O3
4 3 2 1 32 31 30
5
29
6
28
7
27
8
26
9
25
TOP VIEW
10
24
11
23
12
22
13
21
14 15 16 17 18 19 20
A6
A5
A4
A3
A2
A1
A0
NC
I/O0
PIN FUNCTIONS
Pin Name
VCC
WE
NC
1
2
3
4
5
6
7
8
9
10
11
12
A8
A9
NC
NC
OE
A10
CE
I/O7
I/O6
I/O5
14
13
A8
A9
I/O3
I/O4
22
21
20
19
18
17
16
15
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
VCC
NC
NC
24
23
VSS
NC
1
2
3
4
5
6
7
8
9
10
11
12
PLCC Package (N)
I/O1
I/O2
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
VSS
SOIC Package (J,K)
A7
NC
DIP Package (P)
5089 FHD F01
Function
A0–A10
Address Inputs
I/O0–I/O7
Data Inputs/Outputs
CE
Chip Enable
OE
Output Enable
WE
Write Enable
VCC
5V Supply
VSS
Ground
NC
No Connect
MODE SELECTION
Mode
CE
WE
OE
Read
L
H
Byte Write (WE Controlled)
L
Byte Write (CE Controlled)
I/O
Power
L
DOUT
ACTIVE
H
DIN
ACTIVE
L
H
DIN
ACTIVE
Standby, and Write Inhibit
H
X
X
High-Z
STANDBY
Read and Write Inhibit
X
H
H
High-Z
ACTIVE
CAPACITANCE TA = 25°C, f = 1.0 MHz, VCC = 5V
Symbol
Test
Max.
Units
Conditions
CI/O(1)
Input/Output Capacitance
10
pF
VI/O = 0V
CIN(1)
Input Capacitance
6
pF
VIN = 0V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
Doc. No. 25033-00 2/98
2
CAT28C16A
ABSOLUTE MAXIMUM RATINGS*
*COMMENT
Temperature Under Bias ................. –55°C to +125°C
Stresses above those listed under “Absolute Maximum
Ratings” may cause permanent damage to the device.
These are stress ratings only, and functional operation
of the device at these or any other conditions outside of
those listed in the operational sections of this specification is not implied. Exposure to any absolute maximum
rating for extended periods may affect device performance and reliability.
Storage Temperature ....................... –65°C to +150°C
Voltage on Any Pin with
Respect to Ground(2) ........... –2.0V to +VCC + 2.0V
VCC with Respect to Ground ............... –2.0V to +7.0V
Package Power Dissipation
Capability (Ta = 25°C) ................................... 1.0W
Lead Soldering Temperature (10 secs) ............ 300°C
Output Short Circuit Current(3) ........................ 100 mA
RELIABILITY CHARACTERISTICS
Symbol
NEND
(1)
TDR(1)
VZAP
(1)
ILTH(1)(4)
Parameter
Units
Test Method
10,000
Cycles/Byte
MIL-STD-883, Test Method 1033
10
Years
MIL-STD-883, Test Method 1008
ESD Susceptibility
2000
Volts
MIL-STD-883, Test Method 3015
Latch-Up
100
mA
Endurance
Min.
Data Retention
Max.
JEDEC Standard 17
D.C. OPERATING CHARACTERISTICS
VCC = 5V ±10%, unless otherwise specified.
Limits
Symbol
Parameter
Min.
Typ.
Max.
Units
Test Conditions
ICC
VCC Current (Operating, TTL)
35
mA
CE = OE = VIL,
f = 1/tRC min, All I/O’s Open
ICCC(5)
VCC Current (Operating, CMOS)
25
mA
CE = OE = VILC,
f = 1/tRC min, All I/O’s Open
ISB
VCC Current (Standby, TTL)
1
mA
CE = VIH, All I/O’s Open
ISBC(6)
VCC Current (Standby, CMOS)
100
µA
CE = VIHC,
All I/O’s Open
ILI
Input Leakage Current
–10
10
µA
VIN = GND to VCC
ILO
Output Leakage Current
–10
10
µA
VOUT = GND to VCC,
CE = VIH
VIH(6)
High Level Input Voltage
2
VCC +0.3
V
VIL(5)
Low Level Input Voltage
–0.3
0.8
V
VOH
High Level Output Voltage
2.4
VOL
Low Level Output Voltage
VWI
Write Inhibit Voltage
0.4
3.0
V
IOH = –400µA
V
IOL = 2.1mA
V
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) The minimum DC input voltage is –0.5V. During transitions, inputs may undershoot to –2.0V for periods of less than 20 ns. Maximum DC
voltage on output pins is VCC +0.5V, which may overshoot to VCC +2.0V for periods of less than 20 ns.
(3) Output shorted for no more than one second. No more than one output shorted at a time.
(4) Latch-up protection is provided for stresses up to 100mA on address and data pins from –1V to VCC +1V.
(5) VILC = –0.3V to +0.3V.
(6) VIHC = VCC –0.3V to VCC +0.3V.
Doc. No. 25033-00 2/98
3
CAT28C16A
A.C. CHARACTERISTICS, Read Cycle
VCC = 5V ±10%, unless otherwise specified.
28C16A-20
Symbol
Parameter
Min.
Max.
200
Units
tRC
Read Cycle Time
tCE
CE Access Time
200
ns
tAA
Address Access Time
200
ns
tOE
OE Access Time
80
ns
tLZ(1)
CE Low to Active Output
0
ns
tOLZ(1)
OE Low to Active Output
0
ns
tHZ(1)(2)
CE High to High-Z Output
55
ns
tOHZ(1)(2)
OE High to High-Z Output
55
ns
tOH(1)
Output Hold from Address Change
0
ns
ns
Figure 1. A.C. Testing Input/Output Waveform(3)
2.4 V
2.0 V
INPUT PULSE LEVELS
REFERENCE POINTS
0.8 V
0.45 V
5089 FHD F03
Figure 2. A.C. Testing Load Circuit (example)
1.3V
1N914
3.3K
DEVICE
UNDER
TEST
OUT
CL = 100 pF
CL INCLUDES JIG CAPACITANCE
5089 FHD F04
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) Output floating (High-Z) is defined as the state when the external data line is no longer driven by the output buffer.
(3) Input rise and fall times (10% and 90%) < 10 ns.
Doc. No. 25033-00 2/98
4
CAT28C16A
A.C. CHARACTERISTICS, Write Cycle
VCC = 5V ±10%, unless otherwise specified.
28C16A-20
Symbol
Parameter
Min.
Max.
Units
10
ms
tWC
Write Cycle Time
tAS
Address Setup Time
10
ns
tAH
Address Hold Time
100
ns
tCS
CE Setup Time
0
ns
tCH
CE Hold Time
0
ns
tCW(2)
CE Pulse Time
150
ns
tOES
OE Setup Time
15
ns
tOEH
OE Hold Time
15
ns
tWP(2)
WE Pulse Width
150
ns
tDS
Data Setup Time
50
ns
tDH
Data Hold Time
10
ns
tDL
Data Latch Time
50
ns
tINIT(1)
Write Inhibit Period After Power-up
5
20
ms
Note:
(1) This parameter is tested initially and after a design or process change that affects the parameter.
(2) A write pulse of less than 20ns duration will not initiate a write cycle.
Doc. No. 25033-00 2/98
5
CAT28C16A
DEVICE OPERATION
low. The data bus is set to a high impedance state when
either CE or OE goes high. This 2-line control architecture can be used to eliminate bus contention in a system
environment.
Read
Data stored in the CAT28C16A is transferred to the data
bus when WE is held high, and both OE and CE are held
Figure 3. Read Cycle
tRC
ADDRESS
tCE
CE
tOE
OE
VIH
tLZ
WE
tOHZ
tOLZ
HIGH-Z
DATA OUT
tHZ
tOH
DATA VALID
DATA VALID
tAA
28C16A F05
Figure 4. Byte Write Cycle [WE Controlled]
tWC
ADDRESS
tAS
tAH
tCH
tCS
CE
OE
tOES
tWP
tOEH
WE
tDL
DATA OUT
DATA IN
HIGH-Z
DATA VALID
tDS
tDH
5089 FHD F06
Doc. No. 25033-00 2/98
6
CAT28C16A
Byte Write
DATA Polling
A write cycle is executed when both CE and WE are low,
and OE is high. Write cycles can be initiated using either
WE or CE, with the address input being latched on the
falling edge of WE or CE, whichever occurs last. Data,
conversely, is latched on the rising edge of WE or CE,
whichever occurs first. Once initiated, a byte write cycle
automatically erases the addressed byte and the new
data is written within 10 ms.
DATA polling is provided to indicate the completion of a
byte write cycle. Once a byte write cycle is initiated,
attempting to read the last byte written will output the
complement of that data on I/O7 (I/O0–I/O6 are indeterminate) until the programming cycle is complete. Upon
completion of the self-timed byte write cycle, all I/O’s will
output true data during a read cycle.
Figure 5. Byte Write Cycle [CE Controlled]
tWC
ADDRESS
tAS
tAH
tDL
tCW
CE
tOEH
OE
tCS
tOES
tCH
WE
HIGH-Z
DATA OUT
DATA IN
DATA VALID
tDS
tDH
5089 FHD F07
Figure 6. DATA Polling
ADDRESS
CE
WE
tOEH
tOES
tOE
OE
tWC
I/O7
DIN = X
DOUT = X
DOUT = X
28C16A F08
Doc. No. 25033-00 2/98
7
CAT28C16A
HARDWARE DATA PROTECTION
teristics), provides a 5 to 20 ms delay before a write
sequence, after VCC has reached 3.0V min.
The following is a list of hardware data protection features that are incorporated into the CAT28C16A.
(3) Write inhibit is activated by holding any one of OE
low, CE high or WE high.
(1) VCC sense provides for write protection when VCC
falls below 3.0V min.
(4) Noise pulses of less than 20 ns on the WE or CE
inputs will not result in a write cycle.
(2) A power on delay mechanism, tINIT (see AC charac-
ORDERING INFORMATION
Prefix
Device #
CAT
28C16A
Optional
Company ID
Product
Number
Suffix
N
I
Temperature Range
Blank = Commercial (0˚C to +70˚C)
I = Industrial (-40˚C to +85˚C)
A = Automotive (-40˚ to +105˚C)*
Package
P: PDIP
N: PLCC
J: SOIC (JEDEC)
K: SOIC (EIAJ)
T
-20
Tape & Reel
T: 500/Reel
Speed
20: 200ns
28C16A F09
* -40˚C to +125˚C is available upon request
Notes:
(1) The device used in the above example is a CAT28C16ANI-20T (PLCC, Industrial temperature, 200 ns Access Time, Tape & Reel).
Doc. No. 25033-00 2/98
8
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