Design Assistance Customised Pack Sizes / Qtys Assembly Assistance Support for all industry recognised supply formats: Die handling consultancy Hi-Rel die qualification Hot & Cold die probing Electrical test & trimming o Waffle Pack o Gel Pak o Tape & Reel Onsite storage, stockholding & scheduling 100% Visual Inspection o MIL-STD 883 Condition A o MIL-STD 883 Condition A On-site failure analysis Bespoke 24 Hour monitored storage systems for secure long term product support On-site failure analysis Contact [email protected] For price, delivery and to place orders HMC566 www.analog.com www.micross.com Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK HMC566 v00.0306 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz LOW NOISE AMPLIFIERS - CHIP 1 Typical Applications Features The HMC566 is ideal for use as a LNA or driver amplifier for: Noise Figure: 2.8 dB • Point-to-Point Radios OIP3: 23.5 dBm • Point-to-Multi-Point Radios & VSAT Single Supply: +3V @ 80 mA • Test Equipment and Sensors 50 Ohm Matched Input/Output • Military & Space Small Size: 2.54 x 0.98 x 0.10 mm Functional Diagram General Description Gain: 20 dB The HMC566 is a high dynamic range GaAs PHEMT MMIC Low Noise Amplifier (LNA) chip which operates from 29 to 36 GHz. The HMC566 provides 20 dB of small signal gain, 2.8 dB of noise figure and output IP3 of 23.5 dBm across the operating band. This selfbiased LNA is ideal for hybrid and MCM assemblies due to its compact size, slightly positive gain slope, single +3V supply operation, and DC blocked RF I/O’s. All data is measured with the chip in a 50 Ohm test fixture connected via two 0.025 mm (1 mil) diameter bondwires of minimal length 0.31 mm (12 mil). Electrical Specifi cations, TA = +25° C, Vdd 1, 2, 3, 4 = +3V Parameter Min. Frequency Range Gain Max. Min. 17 Typ. Max. 33 - 36 20 19 Units GHz 22 dB Gain Variation Over Temperature 0.03 0.05 0.03 0.05 dB/ °C Noise Figure 2.8 3.3 2.8 3.3 dB Input Return Loss 15 15 Output Return Loss 9 8 dB 12 dBm Output Power for 1 dB Compression (P1dB) 9 12 9 dB Saturated Output Power (Psat) 14.5 14.5 dBm Output Third Order Intercept (IP3) 23.5 23.5 dBm 80 80 mA Supply Current (Idd)(Vdd = +3V) 1 - 90 Typ. 29 - 33 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC566 v00.0306 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz 1 Gain vs. Temperature 30 25 20 25 10 5 GAIN (dB) RESPONSE (dB) 15 S21 S11 S22 0 -5 20 15 -10 +25C +85C -55C 10 -15 -20 -25 5 24 26 28 30 32 34 36 38 27 40 28 29 30 FREQUENCY (GHz) Input Return Loss vs. Temperature 33 34 35 36 37 38 0 +25C +85C -55C -2 RETURN LOSS (dB) -5 RETURN LOSS (dB) 32 Output Return Loss vs. Temperature 0 -10 -15 -20 -25 +25C +85C -55C -4 -6 -8 -10 -30 -12 27 28 29 30 31 32 33 34 35 36 37 38 27 28 29 30 FREQUENCY (GHz) 32 33 34 35 36 37 38 37 38 Reverse Isolation vs. Temperature 0 8 -10 ISOLATION (dB) 10 +25C +85C -55C 6 31 FREQUENCY (GHz) Noise Figure vs. Temperature NOISE FIGURE (dBm) 31 FREQUENCY (GHz) LOW NOISE AMPLIFIERS - CHIP Broadband Gain & Return Loss 4 2 +25C +85C -55C -20 -30 -40 0 -50 27 28 29 30 31 32 33 34 FREQUENCY (GHz) 35 36 37 38 27 28 29 30 31 32 33 34 35 36 FREQUENCY (GHz) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 91 HMC566 v00.0306 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz Psat vs. Temperature 20 20 16 16 Psat (dBm) P1dB (dBm) P1dB vs. Temperature 12 8 +25C +85C -55C 4 12 +25C +85C -55C 8 4 0 0 27 28 29 30 31 32 33 34 35 36 37 38 27 28 29 30 31 FREQUENCY (GHz) 32 33 34 35 36 37 38 FREQUENCY (GHz) Output IP3 vs. Temperature Power Compression @ 32 GHz 30 Pout (dBm), GAIN (dB), PAE (%) 22 26 IP3 (dBm) LOW NOISE AMPLIFIERS - CHIP 1 22 +25C +85C -55C 18 14 20 18 16 Pout Gain PAE 14 12 10 8 6 4 2 10 27 28 29 30 31 32 33 34 35 36 37 0 -20 38 -16 -12 FREQUENCY (GHz) -8 -4 FREQUENCY (GHz) 24 10 22 9 20 8 18 16 7 Gain P1dB 6 14 5 12 4 10 3 8 2 6 Noise Figure 1 0 4 2.5 NOISE FIGURE (dB) GAIN (dB), P1dB (dBm) Gain, Noise Figure & Power vs. Supply Voltage @ 32 GHz 3 3.5 Vdd (Vdc) 1 - 92 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 0 HMC566 v00.0306 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz +3.5 Vdc Vdd (Vdc) Idd (mA) RF Input Power (RFIN)(Vdd = +3.0 Vdc) +5 dBm +2.5 77 Channel Temperature 175 °C +3.0 80 +3.5 83 Drain Bias Voltage (Vdd1, 2, 3, 4) Continuous Pdiss (T= 85 °C) (derate 9.6 mW/°C above 85 °C) 0.82 W Thermal Resistance (channel to die bottom) 104.2 °C/W Storage Temperature -65 to +150 °C Operating Temperature -55 to +85 °C Note: Amplifi er will operate over full voltage ranges shown above. ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS Outline Drawing Die Packaging Information [1] Standard Alternate GP-2 (Gel Pack) [2] [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. 1 LOW NOISE AMPLIFIERS - CHIP Typical Supply Current vs. Vdd Absolute Maximum Ratings NOTES: 1. ALL DIMENSIONS ARE IN INCHES [MM] 2. DIE THICKNESS IS .004” 3. TYPICAL BOND IS .004” SQUARE 4. BACKSIDE METALLIZATION: GOLD 5. BOND PAD METALLIZATION: GOLD 6. BACKSIDE METAL IS GROUND. 7. CONNECTION NOT REQUIRED FOR UNLABELED BOND PADS. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 93 HMC566 v00.0306 LOW NOISE AMPLIFIERS - CHIP 1 1 - 94 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz Pad Descriptions Pad Number Function Description 1 IN This pad is AC coupled and matched to 50 Ohms from 29 - 36 GHz. 2, 3, 4, 5 Vdd1, 2, 3, 4 Power Supply Voltage for the amplifier. External bypass capacitors of 100 pF and 0.1 μF are required. 6 OUT This pad is AC coupled and matched to 50 Ohms from 29 - 36 GHz. Die Bottom GND Die Bottom must be connected to RF/DC ground. Interface Schematic Assembly Diagram For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC566 GaAs PHEMT MMIC LOW NOISE AMPLIFIER, 29 - 36 GHz Mounting & Bonding Techniques for Millimeterwave GaAs MMICs The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane Microstrip substrates should be brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). Handling Precautions 0.127mm (0.005”) Thick Alumina Thin Film Substrate Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > ± 250V ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. Figure 1. 0.102mm (0.004”) Thick GaAs MMIC Wire Bond 0.076mm (0.003”) RF Ground Plane 1 LOW NOISE AMPLIFIERS - CHIP v00.0306 0.150mm (0.005”) Thick Moly Tab Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. 0.254mm (0.010”) Thick Alumina Thin Film Substrate Figure 2. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 °C and a tool temperature of 265 °C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 °C. DO NOT expose the chip to a temperature greater than 320 °C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire is recommended. Thermosonic wirebonding with a nominal stage temperature of 150 °C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 1 - 95