eupec FS300R12KF4 European power- semiconductor and electronics company gmbh co. kg Datasheet

European PowerSemiconductor and
Electronics Company
GmbH + Co. KG
Marketing Information
FS 300 R 12 KF4
61,5
61,5
M6
13
190
31,5
171
57
2,8x0,5
U
V
CX CU
CY
W
CV
CZ CW
4 deep
3,35
5,5
26,4
7
5
3x5=15
GX EX EU GU
GY EY EV GV
+
+
Cu
Cv
Cw
Gu
Gv
Gw
Eu
Ev
Ew
Cx
Cy
Cz
Gx
Gy
Gz
Ex
-
Ey
-
Ez
GZ EZ EW GW
external connection
+ to be done
U
V
W
- external connection
to be done
VWK, May 1996
IGBT-Module
FS 300 R 12 KF4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
VCES
Kollektor-Dauergleichstrom
DC-collector current
IC
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
tp=1 ms
ICRM
600 A
Gesamt-Verlustleistung
total power dissipation
tC=25°C, Transistor /transistor
Ptot
2000 W
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
VGE
+/- 20 V
Dauergleichstrom
DC forward current
IF
300 A
Periodischer Spitzenstrom
repetitive peak forw. current
tp=1ms
IFRM
600 A
Isolations-Prüfspannung
insulation test voltage
RMS, f=50 Hz, t= 1 min.
VISOL
2,5 kV
iC=300A, vGE=15V, t vj=25°C
vCE sat
Charakteristische Werte / Characteristic values: Transistor
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
iC=300A, vGE=15V, t vj=125°C
1200 V
300 A
min.
typ.
-
2,7
max.
3,2 V
-
3,3
3,9 V
6,5 V
Gate-Schwellenspannung
gate threshold voltage
iC=12mA, vCE=vGE, tvj=25°C
vGE(th)
4,5
5,5
Eingangskapazität
input capacity
fO=1MHz,tvj=25°C,vCE=25V,vGE=0V
Cies
-
22
Kollektor-Emitter Reststrom
collector-emitter cut-off current
vCE=1200V, vGE=0V, t vj=25°C
i CES
-
-
-
-
50 mA
Gate-Emitter Reststrom
gate leakage current
vCE=0V, vGE=20V, t vj=25°C
i GES
-
-
400 nA
Emitter-Gate Reststrom
gate leakage current
vCE=0V, vEG=20V, t vj=25°C
i EGS
-
-
400 nA
Einschaltzeit (induktive Last)
turn-on time (inductive load)
iC=300A,vCE=600V
ton
vL= ±15V,R G=6,8Ω, tvj=25°C
-
0,35
- µs
vL= ±15V,R G=6,8Ω, tvj=125°C
-
0,45
- µs
vL= ±15V,R G=6,8Ω, tvj=25°C
-
0,9
- µs
vL= ±15V,R G=6,8Ω, tvj=125°C
-
1,0
- µs
vL= ±15V,R G=6,8Ω, tvj=25°C
-
0,10
- µs
vL= ±15V,R G=6,8Ω, tvj=125°C
-
0,15
- µs
-
2,3
2,9 V
-
2,1
- V
vRM=600V, vEG=10V, t vj=25°C
-
25
- A
vRM=600V, vEG=10V, t vj=125°C
-
65
- A
vCE=1200V, vGE=0V, t vj=125°C
Speicherzeit (induktive Last)
Fallzeit (induktive Last)
storage time (inductive load)
fall time (inductive load)
iC=300A,vCE=600V
iC=300A,vCE=600V
- nF
5 mA
ts
tf
Charakteristische Werte / Characteristic values: Invers-Diode
Durchlaßspannung
forward voltage
iF=300A, vGE=0V, t vj=25°C
VF
iF=300A, vGE=0V, t vj=125°C
Rückstromspitze
Sperrverzögerungsladung
peak reverse recovery current
recovered charge
iF=300A, -di F/dt=300A/µs
iF=300A, -di F/dt=300A/µs
IRM
Qr
vRM=600V, vEG=10V, t vj=25°C
-
4
- µAs
vRM=600V, vEG=10V, t vj=125°C
-
20
- µAs
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Transistor,DC,pro Modul/per module RthJC
0,011 °C/W
Transistor,DC,pro Zweig/per arm
0,064 °C/W
Diode,DC, pro Modul/per module
0,023 °C/W
Diode,DC, pro Zweig/per arm
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
pro Modul / per Module
0,140 °C/W
RthCK
pro Zweig / per arm
Höchstzul. Sperrschichttemperatur
max. junction temperature
Betriebstemperatur
operating temperature
Lagertemperatur
storage temperature
typ.
0,006 °C/W
typ.
0,036 °C/W
tvj max
Transistor / transistor
Diode / diode
150 °C
tc op
-40...+150 °C
tc op
-40...+125 °C
tstg
-40...+125 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Al2O 3
Anzugsdrehmoment f. mech. Befestigung mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse terminal connection torque
Gewicht
weight
M1
terminals M6
3 Nm
M2
G
5...6 Nm
ca. 2300 g
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zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid in
combination with the belonging technical notes.
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