PD- 91330F
IRF7413
SMPS MOSFET
HEXFET® Power MOSFET
Applications
l High frequency DC-DC converters
Benefits
l Low Gate to Drain Charge to Reduce
Switching Losses
l Fully Characterized Capacitance Including
Effective COSS to Simplify Design, (See
App. Note AN1001)
l Fully Characterized Avalanche Voltage
and Current
VDSS
RDS(on) max(mW)
ID
30V
11@VGS = 10V
12A
A
A
D
1
8
S
2
7
D
S
3
6
D
4
5
D
S
G
SO-8
Top View
Absolute Maximum Ratings
Parameter
ID @ TA = 25°C
ID @ TA = 70°C
IDM
PD @TA = 25°C
VGS
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
Units
12
9.6
96
2.5
0.02
± 20
1.0
-55 to + 150
A
W
W/°C
V
V/ns
°C
300 (1.6mm from case )
Thermal Resistance
Symbol
RθJL
RθJA
Parameter
Junction-to-Drain Lead
Junction-to-Ambient
Typ.
Max.
Units
–––
–––
20
50
°C/W
Notes through are on page 8
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1
3/19/02
IRF7413
Static @ TJ = 25°C (unless otherwise specified)
Symbol
V(BR)DSS
∆V(BR)DSS/∆TJ
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Min.
30
–––
–––
–––
1.0
–––
–––
–––
–––
Typ.
–––
0.03
–––
–––
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
11
VGS = 10V, ID = 7.2A
mΩ
18
VGS = 4.5V, I D = 6.0A
–––
V
VDS = VGS, ID = 250µA
1.0
VDS = 24V, VGS = 0V
µA
25
VDS = 24V, VGS = 0V, TJ = 125°C
100
VGS = 20V
nA
-100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance
Min.
16
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
44
7.9
9.2
8.8
8.0
35
14
1670
670
100
2290
680
1020
Max. Units
Conditions
–––
S
VDS = 10V, ID = 7.2A
66
ID = 7.2A
–––
nC
VDS = 24V
–––
VGS = 10V,
–––
VDD = 100V
–––
ID = 7.2A
ns
–––
RG = 6.2Ω
–––
VGS = 10V
–––
VGS = 0V
–––
VDS = 25V
–––
pF
ƒ = 1.0MHz
–––
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 24V, ƒ = 1.0MHz
–––
VGS = 0V, VDS = 0V to 24V
Avalanche Characteristics
Parameter
EAS
IAR
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
120
7.2
mJ
A
Diode Characteristics
IS
ISM
VSD
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Min. Typ. Max. Units
–––
–––
3.1
–––
–––
96
–––
–––
–––
–––
50
74
1.0
75
110
A
V
ns
nC
Conditions
MOSFET symbol
showing the
G
integral reverse
p-n junction diode.
TJ = 25°C, IS = 7.2A, VGS = 0V
TJ = 25°C, IF = 7.2A
di/dt = 100A/µs
D
S
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IRF7413
100
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
10
1
0.1
2.5V
10
2.5V
1
0.1
0.01
1
10
20µs PULSE WIDTH
Tj = 150°C
20µs PULSE WIDTH
Tj = 25°C
0.1
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
0.1
100
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
T J = 150°C
10
T J = 25°C
VDS = 15V
20µs PULSE WIDTH
0
2.0
3.0
4.0
5.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
100
1
1
VDS, Drain-to-Source Voltage (V)
6.0
ID = 12A
1.5
1.0
0.5
0.0
-60 -40 -20
VGS = 10V
0
20
40
60
80 100 120 140 160
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRF7413
100000
ID= 7.2A
VGS , Gate-to-Source Voltage (V)
Crss
Coss
10000
C, Capacitance (pF)
12
VGS = 0V,
f = 1 MHZ
C iss
= C gs + C gd , C ds
SHORTED
= Cgd
= Cds + Cgd
Ciss
Coss
1000
Crss
100
VDS= 24V
VDS= 15V
VDS= 6.0V
10
8
6
4
2
0
10
0
1
10
100
30
40
50
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
100.0
1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
T J = 150°C
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
20
Q G Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
10.0
1.0
T J = 25°C
VGS = 0V
0.1
0.4
0.6
0.8
1.0
VSD, Source-toDrain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10
100
100µsec
10
1msec
Tc = 25°C
Tj = 150°C
Single Pulse
10msec
1
1.2
0
1
10
100
1000
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRF7413
12
VDS
ID , Drain Current (A)
10
VGS
D.U.T.
RG
8
RD
+
-V DD
10V
6
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
4
Fig 10a. Switching Time Test Circuit
2
VDS
90%
0
25
50
75
100
125
150
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Ambient Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJA )
100
D = 0.50
0.20
10
0.10
0.05
PDM
0.02
1
t1
0.01
t2
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
SINGLE PULSE
(THERMAL RESPONSE)
0.1
0.00001
0.0001
0.001
0.01
0.1
1
10
100
t1, Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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5
RDS(on) , Drain-to -Source On Resistance ( Ω)
IRF7413
RDS (on) , Drain-to-Source On Resistance ( Ω)
0.024
0.020
0.016
VGS = 4.5V
0.012
VGS = 10V
0.008
0.004
0
20
40
60
0.06
0.05
0.04
ID = 7.2A
0.03
0.02
0.01
0.00
3.2
80
3.3
3.4
3.5
3.6
3.7
VGS, Gate -to -Source Voltage (V)
ID , Drain Current (A)
Fig 12. On-Resistance Vs. Drain Current
Fig 13. On-Resistance Vs. Gate Voltage
Current Regulator
Same Type as D.U.T.
QG
VGS
.2µF
QGS
.3µF
D.U.T.
QGD
300
+
V
- DS
EAS , Single Pulse Avalanche Energy (mJ)
50KΩ
12V
VG
VGS
3mA
Charge
IG
ID
Current Sampling Resistors
Fig 14a&b. Basic Gate Charge Test Circuit
and Waveform
15V
V(BR)DSS
tp
L
VDS
D.U.T
RG
IAS
20V
I AS
tp
DRIVER
+
V
- DD
0.01Ω
Fig 15a&b. Unclamped Inductive Test circuit
and Waveforms
6
A
TOP
250
BOTTOM
ID
3.2A
4.6A
7.2A
200
150
100
50
0
25
50
75
100
125
150
Starting TJ , Junction Temperature ( °C)
Fig 15c. Maximum Avalanche Energy
Vs. Drain Current
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IRF7413
SO-8 Package Details
D
DIM
B
5
A
8
7
6
5
H
E
0.25 [.010]
1
2
3
A
4
MIN
.0532
.0688
1.35
1.75
A1 .0040
.0098
0.10
0.25
b
.013
.020
0.33
0.51
c
.0075
.0098
0.19
0.25
D
.189
.1968
4.80
5.00
E
.1497
.1574
3.80
4.00
e
.050 BAS IC
e1
6X
e
e1
C
1.27 BASIC
.025 BAS IC
0.635 BASIC
H
.2284
.2440
5.80
6.20
K
.0099
.0196
0.25
0.50
L
.016
.050
0.40
1.27
y
0°
8°
0°
8°
y
0.10 [.004]
0.25 [.010]
MAX
K x 45°
A
A1
8X b
MILLIMET ERS
MAX
A
6
INCHES
MIN
8X L
8X c
7
C A B
FOOT PRINT
NOTES:
1. DIMENSIONING & T OLERANCING PER ASME Y14.5M-1994.
8X 0.72 [.028]
2. CONT ROLLING DIMENSION: MILLIMETER
3. DIMENSIONS ARE S HOWN IN MILLIMET ERS [INCHES].
4. OUT LINE CONF ORMS T O JEDEC OUT LINE MS -012AA.
5 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS .
MOLD PROTRUSIONS NOT T O EXCEED 0.15 [.006].
6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS .
MOLD PROTRUSIONS NOT T O EXCEED 0.25 [.010].
6.46 [.255]
7 DIMENSION IS THE LENGTH OF LEAD F OR SOLDERING TO
A S UBS TRATE.
3X 1.27 [.050]
8X 1.78 [.070]
SO-8 Part Marking
EXAMPLE: THIS IS AN IRF7101 (MOSFET)
INTERNAT IONAL
RECTIFIER
LOGO
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YWW
XXXX
F7101
DAT E CODE (YWW)
Y = LAST DIGIT OF T HE YEAR
WW = WEEK
LOT CODE
PART NUMBER
7
IRF7413
SO-8 Tape and Reel
TERMINAL NUMBER 1
12.3 ( .484 )
11.7 ( .461 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
330.00
(12.992)
MAX.
14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 4.4mH
R G = 25Ω, IAS = 7.2A.
Pulse width ≤ 300µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board
Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
ISD ≤ 7.2A, di/dt ≤ 120A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 150°C
Data and specifications subject to change without notice.
This product has been designed and qualified for the Automotive [Q101] market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.3/02
8
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