BAS32L High-speed switching diode Rev. 04 — 22 March 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diode, fabricated in planar technology, and encapsulated in a small hermetically sealed glass SOD80C SMD package. 1.2 Features ■ ■ ■ ■ ■ Small hermetically sealed glass SMD package High switching speed: ≤ 4 ns Continuous reverse voltage: ≤ 75 V Repetitive peak reverse voltage: ≤ 100 V Repetitive peak forward current: ≤ 450 mA 1.3 Applications ■ High-speed switching ■ Inverse-polarity protection 1.4 Quick reference data Table 1: Symbol Quick reference data Parameter Conditions [1] Min Typ Max Unit IF forward current - - 200 mA IFRM repetitive peak forward current - - 450 mA VR reverse voltage - - 75 V VF forward voltage - - 1000 mV trr reverse recovery time - - 4 ns IF = 100 mA [2] [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [2] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA BAS32L Philips Semiconductors High-speed switching diode 2. Pinning information Table 2: Pinning Pin Description 1 cathode 2 anode Simplified outline Symbol [1] k a sym006 [1] The marking band indicates the cathode. 3. Ordering information Table 3: Ordering information Type number Package Name Description Version BAS32L - hermetically sealed glass surface mounted package; 2 connectors SOD80C Table 4: Marking codes 4. Marking Type number Marking code [1] BAS32L Marking band [1] black: made in Philippines brown: made in China 5. Limiting values Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VRRM repetitive peak reverse voltage VR reverse voltage IF forward current IFRM repetitive peak forward current IFSM non-repetitive peak forward current Conditions [1] total power dissipation Unit V - 75 V - 200 mA 450 mA tp = 1 µs - 4 A tp = 1 ms - 1 A - 0.5 A - 500 mW square wave Tamb = 25 °C 9397 750 14605 Product data sheet Max 100 [2] tp = 1 s Ptot Min - [1] © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 04 — 22 March 2005 2 of 11 BAS32L Philips Semiconductors High-speed switching diode Table 5: Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Tj Conditions Min Max Unit junction temperature - 200 °C Tamb ambient temperature −65 +200 °C Tstg storage temperature −65 +200 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Tj = 25 °C prior to surge 6. Thermal characteristics Table 6: Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point [1] in free air [1] Min Typ Max Unit - - 350 K/W - - 300 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 7. Characteristics Table 7: Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit VF forward voltage IF = 5 mA 620 - 750 mV IF = 100 mA - - 1000 mV IR reverse current IF = 100 mA; Tj = 100 °C - - 930 mV VR = 20 V - - 25 nA VR = 75 V - - 5 µA VR = 20 V; Tj = 150 °C - - 50 µA VR = 75 V; Tj = 150 °C - - 100 µA VR = 0 V; f = 1 MHz - - 2 pF Cd diode capacitance trr reverse recovery time [1] - - 4 ns VFR forward recovery voltage [2] - - 2.5 V [1] When switched from IF = 10 mA to IR = 10 mA; RL = 100 Ω; measured at IR = 1 mA [2] When switched from IF = 50 mA; tr = 20 ns 9397 750 14605 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 04 — 22 March 2005 3 of 11 BAS32L Philips Semiconductors High-speed switching diode mbg451 300 mbg464 600 IF (mA) IF (mA) 200 400 (1) (2) (3) 200 100 0 0 0 100 0 200 Tamb (°C) 1 VF (V) 2 (1) Tj = 175 °C; typical values Mounted on an FR4 PCB; standard footprint (2) Tj = 25 °C; typical values (3) Tj = 25 °C; maximum values Fig 1. Maximum permissible forward current as a function of ambient temperature mbg704 102 Fig 2. Forward current as a function of forward voltage mgd006 103 IR (mA) IFSM (A) 102 10 (1) (2) (3) 10 1 1 10−1 10−1 1 10 102 103 104 10−2 0 100 tp (µs) Based on square wave currents (1) VR = 75 V; maximum values Tj = 25 °C prior to surge (2) VR = 75 V; typical values Tj (oC) 200 (3) VR = 20 V; typical values Fig 3. Maximum permissible non-repetitive peak forward current as a function of pulse duration Fig 4. Reverse current as a function of junction temperature 9397 750 14605 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 04 — 22 March 2005 4 of 11 BAS32L Philips Semiconductors High-speed switching diode mgd004 1.2 Cd (pF) 1.0 0.8 0.6 0.4 0 10 VR (V) 20 Tj = 25 °C; f = 1 MHz Fig 5. Diode capacitance as a function of reverse voltage; typical values 9397 750 14605 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 04 — 22 March 2005 5 of 11 BAS32L Philips Semiconductors High-speed switching diode 8. Test information tr tp t D.U.T. 10 % + IF IF RS = 50 Ω SAMPLING OSCILLOSCOPE V = VR + IF × RS trr t Ri = 50 Ω (1) 90 % VR mga881 input signal output signal Input signal: Reverse pulse rise time tr = 0.6 ns; reverse voltage pulse duration tp = 100 ns; duty factor δ ≤ 0.05 Oscilloscope: Rise time tr = 0.35 ns (1) IR = 1 mA Fig 6. Reverse recovery time test circuit and waveforms I 1 kΩ RS = 50 Ω D.U.T. 450 Ω I V 90 % OSCILLOSCOPE VFR Ri = 50 Ω 10 % t tr t tp input signal output signal mga882 Input signal: Forward pulse rise time tr = 20 ns; forward current pulse duration tp ≥ 100 ns; duty factor δ ≤ 0.005 Fig 7. Forward recovery voltage test circuit and waveforms 9397 750 14605 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 04 — 22 March 2005 6 of 11 BAS32L Philips Semiconductors High-speed switching diode 9. Package outline Hermetically sealed glass surface mounted package; 2 connectors k SOD80C a (1) D L L H DIMENSIONS (mm are the original dimensions) 0 UNIT D H L mm 1.60 1.45 3.7 3.3 0.3 1 2 mm scale Note 1. The marking band indicates the cathode. REFERENCES OUTLINE VERSION IEC SOD80C 100H01 JEDEC EUROPEAN PROJECTION JEITA ISSUE DATE 97-06-20 05-01-26 Fig 8. Package outline SOD80C 10. Packing information Table 8: Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. [1] Type number BAS32L [1] Package SOD80C Description Packing quantity 4 mm pitch, 8 mm tape and reel 2500 10000 -115 -135 For further information and the availability of packing methods, see Section 16. 9397 750 14605 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 04 — 22 March 2005 7 of 11 BAS32L Philips Semiconductors High-speed switching diode 11. Soldering 4.55 4.30 2.30 solder lands solder resist 2.25 1.70 1.60 occupied area solder paste 0.90 (2x) MSA435 Dimensions in mm Fig 9. Reflow soldering footprint SOD80C 6.30 4.90 2.70 1.90 solder lands solder resist occupied area 2.90 1.70 tracks MSA461 Dimensions in mm Fig 10. Wave soldering footprint SOD80C 9397 750 14605 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 04 — 22 March 2005 8 of 11 BAS32L Philips Semiconductors High-speed switching diode 12. Revision history Table 9: Revision history Document ID Release date Data sheet status Change notice Doc. number Supersedes BAS32L_4 20050322 Product data sheet - 9397 750 14605 BAS32L_3 Modifications: • The format of this data sheet has been redesigned to comply with the new presentation and information standard of Philips Semiconductors. • • Section 4 “Marking” added • • Table 6 “Thermal characteristics” Rth(j-tp) thermal resistance from junction to tie-point redefined to Rth(j-sp) thermal resistance from junction to solder point Section 10 “Packing information” added Section 11 “Soldering” added BAS32L_3 20020123 Product specification - 9397 750 09264 BAS32L_2 BAS32L_2 19960910 Product specification - 117021 BAS32L_1 BAS32L_1 19960423 Product specification - 113051 - 9397 750 14605 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 04 — 22 March 2005 9 of 11 BAS32L Philips Semiconductors High-speed switching diode 13. Data sheet status Level Data sheet status [1] Product status [2] [3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. Definitions 15. Disclaimers Short-form specification — The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support — These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 16. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: [email protected] 9397 750 14605 Product data sheet © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Rev. 04 — 22 March 2005 10 of 11 BAS32L Philips Semiconductors High-speed switching diode 17. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 6 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 7 Packing information. . . . . . . . . . . . . . . . . . . . . . 7 Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . 9 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 10 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 Contact information . . . . . . . . . . . . . . . . . . . . 10 © Koninklijke Philips Electronics N.V. 2005 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 22 March 2005 Document number: 9397 750 14605 Published in The Netherlands