MOTOROLA Order this document by MCR265-2/D SEMICONDUCTOR TECHNICAL DATA MCR265-2 thru MCR265-10 Thyristors Silicon Controlled Rectifiers . . . designed for inverse parallel SCR output devices for solid state relays, welders, battery chargers, motor controls or applications requiring high surge operation. • Photo Glass Passivated Blocking Junctions for High Temperature Stability, Center Gate for Uniform Parameters • 550 Amperes Surge Capability • Blocking Voltage to 800 Volts SCRs 55 AMPERES RMS 50 thru 800 VOLTS G A K CASE 221A-04 (TO-220AB) STYLE 3 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted.) Rating Peak Repetitive Forward and Reverse Blocking Voltage(1) (TJ = 25 to 125°C, Gate Open) MCR265-2 MCR265-4 MCR265-6 MCR265-8 MCR265-10 Forward Current (TC = 70°C) (All Conduction Angles) Symbol Value VDRM VRRM Unit Volts 50 200 400 600 800 IT(RMS) IT(AV) 55 35 Amps Peak Non-repetitive Surge Current — 8.3 ms (1/2 Cycle, Sine Wave) ITSM 550 Amps Forward Peak Gate Power PGM 20 Watts PG(AV) 0.5 Watt IGM 2 Amps TJ –40 to +125 °C Tstg –40 to +150 °C Forward Average Gate Power Forward Peak Gate Current (300 µs, 120 PPS) Operating Junction Temperature Range Storage Temperature Range 1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded. These devices are rated for use in applications subject to high surge conditions. Care must be taken to insure proper heat sinking when the device is to be used at high sustained currents. Motorola Thyristor Device Data Motorola, Inc. 1995 1 THERMAL CHARACTERISTICS Symbol Max Unit Thermal Resistance, Junction to Case Characteristic RθJC 0.9 °C/W Thermal Resistance, Junction to Ambient RθJA 60 °C/W ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.) Characteristic Symbol Peak Forward or Reverse Blocking Current (VAK = Rated VDRM or VRRM, Gate Open) Typ Max Unit — — — — 10 2 µA mA — 1.5 1.9 Volts — — 20 40 50 90 IDRM, IRRM TJ = 25°C TJ = 125°C Forward “On” Voltage(1) (ITM = 110 A) VTM Gate Trigger Current (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms) (TC = –40°C) IGT Gate Trigger Voltage (Continuous dc) (Anode Voltage = 12 Vdc, RL = 100 Ohms) VGT — 1 1.5 Volts Gate Non-Trigger Voltage (Anode Voltage = Rated VDRM, RL = 100 Ohms, TJ = 125°C) VGD 0.2 — — Volts Holding Current (Anode Voltage = 12 Vdc, Gate Open) IH — 30 75 mA Turn-On Time (ITM = 55 A, IGT = 200 mAdc) tgt — 1.5 — µs dv/dt — 50 — V/µs Critical Rate-of-Rise of Off-State Voltage (Gate Open, VD = Rated VDRM, Exponential Waveform) 1. Pulse Width mA p 300 µs, Duty Cycle p 2%. FIGURE 1 — AVERAGE CURRENT DERATING FIGURE 2 — MAXIMUM ON-STATE POWER DISSIPATION 60 125 121 117 113 109 105 101 97 93 89 85 81 77 73 69 P(AV) , AVERAGE POWER (WATTS) TC, MAXIMUM CASE TEMPERATURE ( ° C) Min α α = CONDUCTION ANGLE α = 30° dc 60° 90° 180° 54 90° 48 60° 42 dc 36 30 α = 30° 24 18 α α = CONDUCTION ANGLE 12 6.0 180° 0 0 4.0 8.0 12 16 20 24 28 32 36 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS) 2 40 0 5.0 10 15 20 25 30 35 40 IT(AV), AVERAGE ON-STATE FORWARD CURRENT (AMPS)* Motorola Thyristor Device Data FIGURE 3 — GATE TRIGGER CURRENT FIGURE 4 — GATE TRIGGER VOLTAGE 2.5 3.0 VD = 12 Vdc 1.5 NORMALIZED GATE VOLTAGE NORMALIZED GATE CURRENT 2.0 1.0 0.7 0.5 0.4 0.3 0.25 –60 –40 –20 0 20 40 60 80 100 120 2.0 VD = 12 Vdc 1.5 1.0 0.8 0.5 0.3 –60 140 –40 –20 TJ, JUNCTION TEMPERATURE (°C) I TM , INSTANTANEOUS ON-STATE CURRENT (AMPS) NORMALIZED HOLDING CURRENT 3.0 2.0 VD = 12 Vdc 1.0 0.7 0.5 – 40 – 20 0 20 40 60 20 40 60 80 100 140 120 TJ, JUNCTION TEMPERATURE (°C) FIGURE 5 — HOLDING CURRENT 0.3 – 60 0 80 100 120 140 FIGURE 6 — TYPICAL ON-STATE CHARACTERISTICS 1000 100 TJ = 25°C 10 1.0 0 TJ, JUNCTION TEMPERATURE (°C) 1.0 2.0 3.0 VTM, INSTANTANEOUS ON-STATE VOLTAGE (VOLTS) r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) FIGURE 7 — THERMAL RESPONSE 1.0 0.7 0.5 0.3 0.2 ZθJC(t) = RθJC • r(t) 0.1 0.07 0.05 0.03 0.02 0.01 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 500 1k 2k 3k 5k 10k t, TIME (ms) Motorola Thyristor Device Data 3 PACKAGE DIMENSIONS –T– B F T SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. C S 4 Q A STYLE 3: PIN 1. 2. 3. 4. U 1 2 3 H CATHODE ANODE GATE ANODE K Z R L V J G D N DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.014 0.022 0.500 0.562 0.045 0.055 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 ––– ––– 0.080 MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.36 0.55 12.70 14.27 1.15 1.39 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 ––– ––– 2.04 CASE 221A-04 (TO–220AB) Motorola reserves the right to make changes without further notice to any products herein. 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ASIA PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Center, No. 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong. 4 ◊ Motorola Thyristor Device Data *MCR265/D* MCR265/D