HAF2027(L), HAF2027(S) Silicon N Channel Power MOS FET Power Switching REJ03G1674-0100 Rev.1.00 May 19, 2008 Description This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of high junction temperature like applying over power consumption, over current etc.. Features • • • • Logic level operation (4 V Gate drive) Built-in the over temperature shut-down circuit High endurance capability against to the shut-down circuit Latch type shut down operation (need 0 voltage recovery) Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK (L) ) RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 1 1 2 2 3 3 HAF2027(L) HAF2027(S) D Gate Resistor G Temperature Sensing Circuit Latch Circuit Gate Shut-down Circuit S REJ03G1674-0100 Page 1 of 8 1. Gate 2. Drain (Flange) 3. Source Rev.1.00 May 19, 2008 HAF2027(L), HAF2027(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Cannel dissipation Cannel temperature Storage temperature Symbol VDSS VGSS VGSS ID ID (pulse) Note1 IDR PchNote2 Tch Tstg Ratings 60 16 –2.5 50 100 50 100 150 –55 to +150 Unit V V V A A A W °C °C Notes: 1. PW ≤ 10ms, duty cycle ≤ 1 % 2. Value at Tc = 25°C Typical Operation Characteristics (Ta=25°C) Item Symbol VIH VIL Input voltage IIH1 IIH2 Input current (Gate non shut down) IIL IIH(sd)1 Input current (Gate shut down) Shut down temperature Gate operation voltage REJ03G1674-0100 Page 2 of 8 Rev.1.00 IIH(sd)2 Tsd Vop May 19, 2008 Min 3.5 Typ — Max — Unit V — — — — — — — 3.5 — — — — 0.6 0.35 175 — 1.2 100 50 1 — — — 12 V µA µA µA mA mA °C V Test Conditions Vi = 6 V, VDS = 0 Vi = 3.5 V, VDS = 0 Vi = 1.2 V, VDS = 0 Vi = 6 V, VDS = 0 Vi = 3.5 V, VDS = 0 Cannel temperature HAF2027(L), HAF2027(S) Electrical Characteristics (Ta = 25°C) Item Drain current Symbol ID1 ID2 ID3 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Input current (shut down) Zero gate voltage drain current Gate to source cut off voltage Forward transfer admittance Min 80 15 — 60 Typ — — — — Max — — 10 — Unit A A mA V Test Conditions VGS = 6 V, VDS = 10 V Note3 VGS = 3.5 V, VDS = 10 V Note3 VGS = 1.2 V, VDS = 10 V Note3 ID = 10 mA, VGS = 0 IDSS 16 –2.5 — — — — — — — — — — — — — 0.6 0.35 — — — 100 50 1 –100 — — 10 V V µA µA µA µA mA mA µA IG = 300 µA, VDS = 0 IG = –100 µA, VDS = 0 VGS = 6 V, VDS = 0 VGS = 3.5 V, VDS = 0 VGS = 1.2 V, VDS = 0 VGS = –2.4 V, VDS = 0 VGS = 6 V, VDS = 0 VGS = 3.5 V, VDS = 0 VDS = 60 V, VGS = 0 VGS(off) |yfs| 1.0 15 — 65 2.25 — V S RDS(on) 7.7 10.3 1423 10 48 22 23 0.9 10 15 — — — — — — mΩ mΩ pF µs µs µs µs V ID = 25 A, VGS = 10 V Note3 ID = 25 A, VGS = 4 V Note3 VDS = 10 V, VGS = 0, f = 1MHz VGS = 10 V, ID= 25 A, RL = 1.2 Ω V(BR)GSS IGSS1 IGSS2 IGSS3 IGSS4 IGS(OP)1 IGS(OP)2 VDS = 10 V, ID = 1 mA ID = 25 A, VDS = 10 V Note3 Body-drain diode forward voltage VDF — — — — — — — — Body-drain diode reverse recovery time trr — 102 — ns IF = 50 A, VGS = 0, diF/dt = 100 A/µs tos1 — — 0.7 0.43 — — ms ms VGS = 5 V, VDD = 16 V VGS = 5 V, VDD = 24 V Static drain to source on state resistance Output capacitance Turn-on delay time Rise time Turn off delay time Fall time Over load shut down Note4 operation time RDS(on) Coss td(on) tr td(off) tf tos2 Notes: 3. Pulse test 4. Including the junction temperature rise of the over lorded condition. REJ03G1674-0100 Page 3 of 8 Rev.1.00 May 21, 2008 IF = 50 A, VGS = 0 HAF2027(L), HAF2027(S) Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 s m = 10 10 = Operation in this area is limited RDS(on) ° 25 C) 1 m s c (T 50 PW n tio ra pe 100 100 1 150 O Drain Current ID (A) Thermal shut down operation area DC Channel Dissipation Pch (W) 200 Ta = 25°C 0 50 200 100 150 0.1 0.01 200 0.1 1 10 100 Case Temperature Tc (°C) Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 8V 100 6V Pulse Test 150 5V 100 4V VGS = 3.5 V 50 Drain Current ID (A) Drain Current ID (A) 10 V Tc = -25°C 75 25°C 50 75°C 25 VDS = 10 V Pulse Test 2 4 6 8 0 10 1 2 3 4 5 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source State Resistance vs. Drain Current 1200 Pulse Test 1000 800 600 ID = 50 A 400 25 A 200 10 A 0 2 4 6 8 10 12 Gate to Source Voltage VGS (V) REJ03G1674-0100 Page 4 of 8 Rev.1.00 May 19, 2008 Static Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (mV) 0 1000 100 VGS = 4 V 10 VGS = 10 V Pulse Test 1 0.1 1 10 Drain Current ID (A) 100 Static Drain to Source on State Resistance vs. Temperature Pulse Test 25 A 15 ID = 10 A 25 A 10 VGS = 4 V ID = 10 A VGS = 10 V 5 -50 -25 1000 0 25 50 75 100 125 150 1000 VDS = 10 V Pulse Test 100 Tc = -25°C 10 25°C 75°C 1 0.1 0.01 0.001 0.0001 0.0001 0.001 0.01 0.1 1 10 Case Temperature Tc (°C) Drain Current ID (A) Body-Drain Diode Reverse Recovery Time Switching Characteristics 100 100 di / dt = 100 A / µs VGS = 0, Ta = 25°C tr 100 tf td(off) 10 td(on) VGS = 10 V, VDD = 30 V PW = 300 µs, duty ≤ 1 % 10 1 10 1 0.1 100 1 10 100 Case Temperature IDR (A) Drain Current ID (A) Reverse Drain Current vs. Source to Drain Voltage Typical Capacitance vs. Drain to Source Voltage 50 10000 5V VGS = 0 V 40 30 Capacitance C (pF) Reverse Drain Current IDR (A) Forward Transfer Admittance |yfs| (S) 20 Forward Transfer Admittance vs. Drain Current Switching Time t (µs) Reverse Recovery Time trr (ns) Static Drain to Source On State Resistance RDS(on) (mΩ) HAF2027(L), HAF2027(S) 10 V 20 10 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSD (V) REJ03G1674-0100 Page 5 of 8 Rev.1.00 May 19, 2008 1000 Coss VGS = 0 f = 1 MHz 100 0 10 20 30 40 50 60 Drain to Source Voltage VDS (V) HAF2027(L), HAF2027(S) Shutdown Case Temperature vs. Gate to Source Voltage Shutdown Case Temperature Tc (°C) Gate to Source Voltage VGS (V) Gate to Source Voltage vs. Shutdown Time of Load-Short Test 15 VDD = 16 V 10 24 V 5 0 0.00001 0.0001 0.001 0.01 200 180 160 140 120 ID = 5 A 100 0 Shutdown Time of Load-Short Test Pw (S) 2 4 6 8 10 Gate to Source Voltage VGS (V) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 0.1 θ ch- c(t) = γ s (t) • θ ch- c θ ch- c = 1.25°C/W, Tc = 25°C 0.05 0.02 0.03 PDM 1 0.0 0.01 10 µ PW T PW e uls p ot T h 1s D= 100 µ 1m 100 m 10 m 1 10 Pulse Width PW (S) Switching Time Test Circuit Waveform 90% Vout Monitor Vin Monitor D.U.T. RL Vin Vout Vin 10V 50 Ω VDD = 30 V Rev.1.00 May 19, 2008 10% 10% 90% td(on) REJ03G1674-0100 Page 6 of 8 10% tr 90% td(off) tf HAF2027(L), HAF2027(S) Package Dimensions Previous Code LDPAK(L) / LDPAK(L)V RENESAS Code PRSS0004AE-A 4.44 ± 0.2 1.3 ± 0.15 1.3 ± 0.2 1.37 ± 0.2 0.76 ± 0.1 2.54 ± 0.5 2.54 ± 0.5 JEITA Package Code SC-83 2.49 ± 0.2 11.0 ± 0.5 0.2 0.86 +– 0.1 Package Name LDPAK(S)-(1) Unit: mm 10.2 ± 0.3 8.6 ± 0.3 11.3 ± 0.5 0.3 10.0 +– 0.5 MASS[Typ.] 1.40g RENESAS Code PRSS0004AE-B Previous Code LDPAK(S)-(1) / LDPAK(S)-(1)V 0.4 ± 0.1 MASS[Typ.] 1.30g 10.0 (1.5) REJ03G1674-0100 Page 7 of 8 Rev.1.00 2.54 ± 0.5 0.4 ± 0.1 0.3 3.0 +– 0.5 2.54 ± 0.5 0.2 0.86 +– 0.1 May 19, 2008 7.8 7.0 2.49 ± 0.2 0.2 0.1 +– 0.1 1.37 ± 0.2 1.3 ± 0.2 7.8 6.6 1.3 ± 0.15 + 0.3 – 0.5 8.6 ± 0.3 (1.5) (1.4) 4.44 ± 0.2 10.2 ± 0.3 Unit: mm 1.7 JEITA Package Code (1.4) Package Name LDPAK(L) 2.2 HAF2027(L), HAF2027(S) Ordering Information Part No. HAF2027-90STL-E HAF2027-90STR-E REJ03G1674-0100 Page 8 of 8 Quantity 1000 pcs/Reel 1000 pcs/Reel Rev.1.00 May 19, 2008 Shipping Container Taping (Reel) Taping (Reel) Sales Strategic Planning Div. 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