Intersil HGTG40N60C3 75a, 600v, ufs series n-channel igbt Datasheet

HGTG40N60C3
Data Sheet
January 2000
75A, 600V, UFS Series N-Channel IGBT
Features
The HGTG40N60C3 is a MOS gated high voltage switching
device combining the best features of a MOSFET and a
bipolar transistor. These devices have the high input
impedance of a MOSFET and the low on-state conduction
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC.
• 75A, 600V, TC = 25oC
File Number
4472.2
• 600V Switching SOA Capability
• Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC
• Short Circuit Rating
• Low Conduction Loss
The IGBT is ideal for many high voltage switching
applications operating at moderate frequencies where low
conduction losses are essential, such as: AC and DC motor
controls, power supplies and drivers for solenoids, relays
and contactors.
Packaging
JEDEC STYLE TO-247
E
C
G
Formerly developmental type TA49273.
Ordering Information
PART NUMBER
PACKAGE
HGTG40N60C3
TO-247
PKG. NO.
G40N60C3
NOTE: When ordering, use the entire part number.
Symbol
C
G
E
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
4,364,073
4,417,385
4,430,792
4,443,931
4,466,176
4,516,143
4,532,534
4,587,713
4,598,461
4,605,948
4,620,211
4,631,564
4,639,754
4,639,762
4,641,162
4,644,637
4,682,195
4,684,413
4,694,313
4,717,679
4,743,952
4,783,690
4,794,432
4,801,986
4,803,533
4,809,045
4,809,047
4,810,665
4,823,176
4,837,606
4,860,080
4,883,767
4,888,627
4,890,143
4,901,127
4,904,609
4,933,740
4,963,951
4,969,027
1
CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000
HGTG40N60C3
Absolute Maximum Ratings
TC = 25oC, Unless Otherwise Specified
HGTG40N60C3
UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES
600
V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM
Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG
Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL
Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC
75
40
300
±20
±30
40A at 600V
291
2.33
100
-55 to 150
260
5
10
A
A
A
V
V
W
W/oC
mJ
oC
oC
µs
µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω.
TC = 25oC, Unless Otherwise Specified
Electrical Specifications
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Collector to Emitter Breakdown Voltage
BVCES
IC = 250µA, VGE = 0V
600
-
-
V
Emitter to Collector Breakdown Voltage
BVECS
IC = 10mA, VGE = 0V
15
25
-
V
-
-
250
µA
-
-
4.0
mA
-
1.3
1.8
V
-
1.4
2.0
V
3.1
4.5
6.0
V
-
-
±250
nA
VCE = 480V
200
-
-
A
VCE = 600V
40
-
-
A
IC = IC110, VCE = 0.5 BVCES
-
7.2
-
V
IC = IC110,
VCE = 0.5 BVCES
VGE = 15V
-
275
302
nC
VGE = 20V
-
360
395
nC
-
47
-
ns
-
30
-
ns
-
185
-
ns
-
60
-
ns
-
850
-
mJ
Collector to Emitter Leakage Current
Collector to Emitter Saturation Voltage
Gate to Emitter Threshold Voltage
Gate to Emitter Leakage Current
Switching SOA
ICES
VCE(SAT)
VGE(TH)
VCE = BVCES
IC = IC110,
VGE = 15V
IC = 250µA, VCE = VGE
IGES
VGE = ±20V
SSOA
TJ = 150oC, RG =
3Ω, VGE = 15V,
L = 400µH
Gate to Emitter Plateau Voltage
VGEP
On-State Gate Charge
QG(ON)
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
TC = 25oC
TC = 150oC
TC = 25oC
TC = 150oC
IGBT and Diode at TJ = 25oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 1mH
Test Circuit (Figure 17)
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
-
1.0
1.2
mJ
Turn-Off Energy (Note 4)
EOFF
-
1.0
1.8
mJ
2
HGTG40N60C3
TC = 25oC, Unless Otherwise Specified (Continued)
Electrical Specifications
PARAMETER
SYMBOL
Current Turn-On Delay Time
td(ON)I
Current Rise Time
trI
Current Turn-Off Delay Time
td(OFF)I
Current Fall Time
tfI
TEST CONDITIONS
MIN
TYP
MAX
UNITS
-
41
-
ns
-
30
-
ns
-
360
450
ns
-
100
210
ns
-
860
-
µJ
IGBT and Diode at TJ = 150oC
ICE = IC110
VCE = 0.8 BVCES
VGE = 15V
RG = 3Ω
L = 1mH
Test Circuit (Figure 17)
Turn-On Energy (Note 3)
EON1
Turn-On Energy (Note 3)
EON2
-
2.0
2.4
mJ
Turn-Off Energy (Note 4)
EOFF
-
2.5
4
mJ
Thermal Resistance Junction To Case
RθJC
-
-
0.43
oC/W
NOTES:
3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2
is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in
Figure 17.
4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement
of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss.
Unless Otherwise Specified
VGE = 15V
70
60
50
PACKAGE
LIMIT
40
30
20
10
0
25
50
75
100
125
150
225
175
150
125
100
75
50
25
0
10
fMAX1 = 0.05 / (td(OFF)I + td(ON)I)
fMAX2 = (PD - PC) / (EON2 + EOFF)
PC = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
RØJC = 0.43oC/W, SEE NOTES
1
2
5
10
40
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO
EMITTER CURRENT
3
80
tSC , SHORT CIRCUIT WITHSTAND TIME (µs)
fMAX , OPERATING FREQUENCY (kHz)
100
15V
10V
15V
10V
300
400
500
600
700
FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA
TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 480V
75oC
75oC
110oC
110oC
200
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 1. DC COLLECTOR CURRENT vs CASE
TEMPERATURE
VGE
100
0
TC , CASE TEMPERATURE (oC)
TC
TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH
200
20
750
VCE = 360V, RG = 3Ω, TJ = 125oC
ISC
16
625
12
500
8
375
tSC
4
10
11
12
13
14
250
15
VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 4. SHORT CIRCUIT WITHSTAND TIME
ISC , PEAK SHORT CIRCUIT CURRENT (A)
ICE , DC COLLECTOR CURRENT (A)
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
HGTG40N60C3
Unless Otherwise Specified (Continued)
300
DUTY CYCLE <0.5%, VGE = 10V
PULSE DURATION = 250µs
250
200
TC = 150oC
TC = -55oC
150
TC = 25oC
100
50
0
0
1
2
3
5
4
6
7
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
Typical Performance Curves
300
DUTY CYCLE <0.5%, VGE = 15V
PULSE DURATION = 250µs
250
200
TC = -55oC
100
TC = 25oC
50
0
0
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
6
TJ = 25oC, TJ = 150oC, VGE = 15V
4
2
0
10
20
30
40
50
60
70
4
RG = 3Ω, L = 1mH, VCE = 480V
5
4
TJ = 150oC; VGE = 10V OR 15V
3
2
1
TJ = 25oC; VGE = 10V OR 15V
0
80
0
ICE , COLLECTOR TO EMITTER CURRENT (A)
10
20
30
40
50
60
70
80
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT
75
400
RG = 3Ω, L = 1mH, VCE = 480V
RG = 3Ω, L = 1mH, VCE = 480V
70
350
TJ = 25oC, TJ = 150oC, VGE = 10V
65
trI , RISE TIME (ns)
tdI , TURN-ON DELAY TIME (ns)
3
FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE
EOFF, TURN-OFF ENERGY LOSS (mJ)
EON2 , TURN-ON ENERGY LOSS (mJ)
8
0
2
6
RG = 3Ω, L = 1mH, VCE = 480V
TJ = 25oC, TJ = 150oC, VGE = 10V
10
1
VCE , COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE
12
TC = 150oC
150
60
TJ = 25oC, TJ = 150oC, VGE = 10V
55
50
45
40
TJ = 25oC, TJ = 150oC, VGE = 15V
35
300
250
TJ = 25oC AND TJ = 150oC, VGE = 15V
200
150
100
50
0
30
0
10
20
30
40
50
60
70
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
4
80
0
10
20
30
40
50
60
70
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO
EMITTER CURRENT
80
HGTG40N60C3
Typical Performance Curves
Unless Otherwise Specified (Continued)
160
RG = 3Ω, L = 1mH, VCE = 480V
RG = 3Ω, L = 1mH, VCE = 480V
140
350
tfI , FALL TIME (ns)
td(OFF)I , TURN-OFF DELAY TIME (ns)
400
300
TJ = 150oC, VGE = 10V, VGE = 15V
250
200
TJ = 150oC, VGE = 10V, VGE = 15V
120
100
80
60
TJ = 25oC, VGE = 10V OR 15V
150
40
TJ = 25oC, VGE = 10V, VGE = 15V
20
100
0
10
20
30
40
50
60
70
0
80
VGE, GATE TO EMITTER VOLTAGE (V)
16
250
TC = 150oC
150
100
TC = -55oC
50
TC = 25oC
6
7
8
9
VCE = 600V
6
VCE = 200V
10
2
11
0
50
100
150
200
250
QG, GATE CHARGE (nC)
FIGURE 14. GATE CHARGE WAVEFORMS
FREQUENCY = 1MHz
10.0
7.5
COES
5.0
CRES
5
10
15
20
25
VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE
5
VCE = 400V
4
CIES
0
80
8
15.0
0
70
10
FIGURE 13. TRANSFER CHARACTERISTIC
2.5
60
IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC
VGE , GATE TO EMITTER VOLTAGE (V)
12.5
50
12
0
5
40
14
0
4
30
FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER
CURRENT
DUTY CYCLE <0.5%, VCE = 10V
PULSE DURATION = 250µs
C, CAPACITANCE (nF)
ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT
200
20
ICE , COLLECTOR TO EMITTER CURRENT (A)
ICE , COLLECTOR TO EMITTER CURRENT (A)
300
10
300
HGTG40N60C3
ZθJC , NORMALIZED THERMAL RESPONSE
Typical Performance Curves
Unless Otherwise Specified (Continued)
100
0.5
0.2
0.1
10-1
0.05
t1
0.02
DUTY FACTOR, D = t1 / t2
0.01
10-2
PD
PEAK TJ = (PD X ZθJC X RθJC) + TC
t2
SINGLE PULSE
10-5
10-4
10-3
10-2
10-1
100
t1 , RECTANGULAR PULSE DURATION (s)
FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE
Test Circuit and Waveforms
90%
L = 1mH
RHRP3060
10%
VGE
EON2
EOFF
VCE
RG = 3Ω
90%
+
-
VDD = 480V
ICE
10%
td(OFF)I
tfI
trI
td(ON)I
FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT
6
FIGURE 18. SWITCHING TEST WAVEFORMS
HGTG40N60C3
Handling Precautions for IGBTs
Operating Frequency Information
Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy
through the devices. When handling these devices, care
should be exercised to assure that the static charge built in
the handler’s body capacitance is not discharged through
the device. With proper handling and application procedures,
however, IGBTs are currently being extensively used in
production by numerous equipment manufacturers in
military, industrial and consumer applications, with virtually
no damage problems due to electrostatic discharge. IGBTs
can be handled safely if the following basic precautions are
taken:
Operating frequency information for a typical device
(Figure 3) is presented as a guide for estimating device
performance for a specific application. Other typical
frequency vs collector current (ICE) plots are possible using
the information shown for a typical unit in Figures 5, 6, 7, 8, 9
and 11. The operating frequency plot (Figure 3) of a typical
device shows fMAX1 or fMAX2; whichever is smaller at each
point. The information is based on measurements of a
typical device and is bounded by the maximum rated
junction temperature.
1. Prior to assembly into a circuit, all leads should be kept
shorted together either by the use of metal shorting
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent.
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable
means - for example, with a metallic wristband.
3. Tips of soldering irons should be grounded.
4. Devices should never be inserted into or removed from
circuits with power on.
5. Gate Voltage Rating - Never exceed the gate-voltage
rating of VGEM. Exceeding the rated VGE can result in
permanent damage to the oxide layer in the gate region.
6. Gate Termination - The gates of these devices are
essentially capacitors. Circuits that leave the gate
open-circuited or floating should be avoided. These
conditions can result in turn-on of the device due to
voltage buildup on the input capacitor due to leakage
currents or pickup.
7. Gate Protection - These devices do not have an internal
monolithic Zener diode from gate to emitter. If gate
protection is required an external Zener is recommended.
fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I).
Deadtime (the denominator) has been arbitrarily held to 10%
of the on-state time for a 50% duty factor. Other definitions
are possible. td(OFF)I and td(ON)I are defined in Figure 18.
Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. td(OFF)I
is important when controlling output ripple under a lightly
loaded condition.
fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The
allowable dissipation (PD) is defined by PD = (TJM- TC)/RθJC.
The sum of device switching and conduction losses must
not exceed PD. A 50% duty factor was used (Figure 3) and
the conduction losses (PC) are approximated by
PC = (VCE x ICE)/2.
EON2 and EOFF are defined in the switching waveforms
shown in Figure 18. EON2 is the integral of the
instantaneous power loss (ICE x VCE) during turn-on and
EOFF is the integral of the instantaneous power loss
(ICE x VCE) during turn-off. All tail losses are included in
the calculation for EOFF; i.e., the collector current equals
zero (ICE = 0).
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
7
ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.
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