HGTG40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The HGTG40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. • 75A, 600V, TC = 25oC File Number 4472.2 • 600V Switching SOA Capability • Typical Fall Time. . . . . . . . . . . . . . . . 100ns at TJ = 150oC • Short Circuit Rating • Low Conduction Loss The IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as: AC and DC motor controls, power supplies and drivers for solenoids, relays and contactors. Packaging JEDEC STYLE TO-247 E C G Formerly developmental type TA49273. Ordering Information PART NUMBER PACKAGE HGTG40N60C3 TO-247 PKG. NO. G40N60C3 NOTE: When ordering, use the entire part number. Symbol C G E INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS 4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713 4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637 4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986 4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767 4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027 1 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright © Intersil Corporation 2000 HGTG40N60C3 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified HGTG40N60C3 UNITS Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V Collector Current Continuous At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM Switching Safe Operating Area at TJ = 150oC (Figure 2) . . . . . . . . . . . . . . . . . . . . . . . SSOA Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Reverse Voltage Avalanche Energy. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . EARV Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL Short Circuit Withstand Time (Note 2) at VGE = 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 75 40 300 ±20 ±30 40A at 600V 291 2.33 100 -55 to 150 260 5 10 A A A V V W W/oC mJ oC oC µs µs CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360V, TJ = 125oC, RG = 3Ω. TC = 25oC, Unless Otherwise Specified Electrical Specifications PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 25 - V - - 250 µA - - 4.0 mA - 1.3 1.8 V - 1.4 2.0 V 3.1 4.5 6.0 V - - ±250 nA VCE = 480V 200 - - A VCE = 600V 40 - - A IC = IC110, VCE = 0.5 BVCES - 7.2 - V IC = IC110, VCE = 0.5 BVCES VGE = 15V - 275 302 nC VGE = 20V - 360 395 nC - 47 - ns - 30 - ns - 185 - ns - 60 - ns - 850 - mJ Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA ICES VCE(SAT) VGE(TH) VCE = BVCES IC = IC110, VGE = 15V IC = 250µA, VCE = VGE IGES VGE = ±20V SSOA TJ = 150oC, RG = 3Ω, VGE = 15V, L = 400µH Gate to Emitter Plateau Voltage VGEP On-State Gate Charge QG(ON) Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TC = 25oC TC = 150oC TC = 25oC TC = 150oC IGBT and Diode at TJ = 25oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 17) Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 1.0 1.2 mJ Turn-Off Energy (Note 4) EOFF - 1.0 1.8 mJ 2 HGTG40N60C3 TC = 25oC, Unless Otherwise Specified (Continued) Electrical Specifications PARAMETER SYMBOL Current Turn-On Delay Time td(ON)I Current Rise Time trI Current Turn-Off Delay Time td(OFF)I Current Fall Time tfI TEST CONDITIONS MIN TYP MAX UNITS - 41 - ns - 30 - ns - 360 450 ns - 100 210 ns - 860 - µJ IGBT and Diode at TJ = 150oC ICE = IC110 VCE = 0.8 BVCES VGE = 15V RG = 3Ω L = 1mH Test Circuit (Figure 17) Turn-On Energy (Note 3) EON1 Turn-On Energy (Note 3) EON2 - 2.0 2.4 mJ Turn-Off Energy (Note 4) EOFF - 2.5 4 mJ Thermal Resistance Junction To Case RθJC - - 0.43 oC/W NOTES: 3. Values for two Turn-On loss conditions are shown for the convenience of the circuit designer. EON1 is the turn-on loss of the IGBT only. EON2 is the turn-on loss when a typical diode is used in the test circuit and the diode is at the same TJ as the IGBT. The diode type is specified in Figure 17. 4. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0A). All devices were tested per JEDEC Standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Unless Otherwise Specified VGE = 15V 70 60 50 PACKAGE LIMIT 40 30 20 10 0 25 50 75 100 125 150 225 175 150 125 100 75 50 25 0 10 fMAX1 = 0.05 / (td(OFF)I + td(ON)I) fMAX2 = (PD - PC) / (EON2 + EOFF) PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RØJC = 0.43oC/W, SEE NOTES 1 2 5 10 40 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 3. OPERATING FREQUENCY vs COLLECTOR TO EMITTER CURRENT 3 80 tSC , SHORT CIRCUIT WITHSTAND TIME (µs) fMAX , OPERATING FREQUENCY (kHz) 100 15V 10V 15V 10V 300 400 500 600 700 FIGURE 2. MINIMUM SWITCHING SAFE OPERATING AREA TJ = 150oC, RG = 3Ω, L = 1mH, V CE = 480V 75oC 75oC 110oC 110oC 200 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 1. DC COLLECTOR CURRENT vs CASE TEMPERATURE VGE 100 0 TC , CASE TEMPERATURE (oC) TC TJ = 150oC, RG = 3Ω, VGE = 15V, L = 100µH 200 20 750 VCE = 360V, RG = 3Ω, TJ = 125oC ISC 16 625 12 500 8 375 tSC 4 10 11 12 13 14 250 15 VGE , GATE TO EMITTER VOLTAGE (V) FIGURE 4. SHORT CIRCUIT WITHSTAND TIME ISC , PEAK SHORT CIRCUIT CURRENT (A) ICE , DC COLLECTOR CURRENT (A) 80 ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves HGTG40N60C3 Unless Otherwise Specified (Continued) 300 DUTY CYCLE <0.5%, VGE = 10V PULSE DURATION = 250µs 250 200 TC = 150oC TC = -55oC 150 TC = 25oC 100 50 0 0 1 2 3 5 4 6 7 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) Typical Performance Curves 300 DUTY CYCLE <0.5%, VGE = 15V PULSE DURATION = 250µs 250 200 TC = -55oC 100 TC = 25oC 50 0 0 VCE , COLLECTOR TO EMITTER VOLTAGE (V) 6 TJ = 25oC, TJ = 150oC, VGE = 15V 4 2 0 10 20 30 40 50 60 70 4 RG = 3Ω, L = 1mH, VCE = 480V 5 4 TJ = 150oC; VGE = 10V OR 15V 3 2 1 TJ = 25oC; VGE = 10V OR 15V 0 80 0 ICE , COLLECTOR TO EMITTER CURRENT (A) 10 20 30 40 50 60 70 80 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 7. TURN-ON ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT FIGURE 8. TURN-OFF ENERGY LOSS vs COLLECTOR TO EMITTER CURRENT 75 400 RG = 3Ω, L = 1mH, VCE = 480V RG = 3Ω, L = 1mH, VCE = 480V 70 350 TJ = 25oC, TJ = 150oC, VGE = 10V 65 trI , RISE TIME (ns) tdI , TURN-ON DELAY TIME (ns) 3 FIGURE 6. COLLECTOR TO EMITTER ON-STATE VOLTAGE EOFF, TURN-OFF ENERGY LOSS (mJ) EON2 , TURN-ON ENERGY LOSS (mJ) 8 0 2 6 RG = 3Ω, L = 1mH, VCE = 480V TJ = 25oC, TJ = 150oC, VGE = 10V 10 1 VCE , COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 5. COLLECTOR TO EMITTER ON-STATE VOLTAGE 12 TC = 150oC 150 60 TJ = 25oC, TJ = 150oC, VGE = 10V 55 50 45 40 TJ = 25oC, TJ = 150oC, VGE = 15V 35 300 250 TJ = 25oC AND TJ = 150oC, VGE = 15V 200 150 100 50 0 30 0 10 20 30 40 50 60 70 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 9. TURN-ON DELAY TIME vs COLLECTOR TO EMITTER CURRENT 4 80 0 10 20 30 40 50 60 70 ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 10. TURN-ON RISE TIME vs COLLECTOR TO EMITTER CURRENT 80 HGTG40N60C3 Typical Performance Curves Unless Otherwise Specified (Continued) 160 RG = 3Ω, L = 1mH, VCE = 480V RG = 3Ω, L = 1mH, VCE = 480V 140 350 tfI , FALL TIME (ns) td(OFF)I , TURN-OFF DELAY TIME (ns) 400 300 TJ = 150oC, VGE = 10V, VGE = 15V 250 200 TJ = 150oC, VGE = 10V, VGE = 15V 120 100 80 60 TJ = 25oC, VGE = 10V OR 15V 150 40 TJ = 25oC, VGE = 10V, VGE = 15V 20 100 0 10 20 30 40 50 60 70 0 80 VGE, GATE TO EMITTER VOLTAGE (V) 16 250 TC = 150oC 150 100 TC = -55oC 50 TC = 25oC 6 7 8 9 VCE = 600V 6 VCE = 200V 10 2 11 0 50 100 150 200 250 QG, GATE CHARGE (nC) FIGURE 14. GATE CHARGE WAVEFORMS FREQUENCY = 1MHz 10.0 7.5 COES 5.0 CRES 5 10 15 20 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER VOLTAGE 5 VCE = 400V 4 CIES 0 80 8 15.0 0 70 10 FIGURE 13. TRANSFER CHARACTERISTIC 2.5 60 IG(REF) = 1mA, RL = 7.5Ω, TC = 25oC VGE , GATE TO EMITTER VOLTAGE (V) 12.5 50 12 0 5 40 14 0 4 30 FIGURE 12. FALL TIME vs COLLECTOR TO EMITTER CURRENT DUTY CYCLE <0.5%, VCE = 10V PULSE DURATION = 250µs C, CAPACITANCE (nF) ICE , COLLECTOR TO EMITTER CURRENT (A) FIGURE 11. TURN-OFF DELAY TIME vs COLLECTOR TO EMITTER CURRENT 200 20 ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A) 300 10 300 HGTG40N60C3 ZθJC , NORMALIZED THERMAL RESPONSE Typical Performance Curves Unless Otherwise Specified (Continued) 100 0.5 0.2 0.1 10-1 0.05 t1 0.02 DUTY FACTOR, D = t1 / t2 0.01 10-2 PD PEAK TJ = (PD X ZθJC X RθJC) + TC t2 SINGLE PULSE 10-5 10-4 10-3 10-2 10-1 100 t1 , RECTANGULAR PULSE DURATION (s) FIGURE 16. NORMALIZED TRANSIENT THERMAL RESPONSE, JUNCTION TO CASE Test Circuit and Waveforms 90% L = 1mH RHRP3060 10% VGE EON2 EOFF VCE RG = 3Ω 90% + - VDD = 480V ICE 10% td(OFF)I tfI trI td(ON)I FIGURE 17. INDUCTIVE SWITCHING TEST CIRCUIT 6 FIGURE 18. SWITCHING TEST WAVEFORMS HGTG40N60C3 Handling Precautions for IGBTs Operating Frequency Information Insulated Gate Bipolar Transistors are susceptible to gateinsulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: Operating frequency information for a typical device (Figure 3) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 5, 6, 7, 8, 9 and 11. The operating frequency plot (Figure 3) of a typical device shows fMAX1 or fMAX2; whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as “ECCOSORBD™ LD26” or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic Zener diode from gate to emitter. If gate protection is required an external Zener is recommended. fMAX1 is defined by fMAX1 = 0.05/(td(OFF)I+ td(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. td(OFF)I and td(ON)I are defined in Figure 18. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. td(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON2). The allowable dissipation (PD) is defined by PD = (TJM- TC)/RθJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 3) and the conduction losses (PC) are approximated by PC = (VCE x ICE)/2. EON2 and EOFF are defined in the switching waveforms shown in Figure 18. EON2 is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss (ICE x VCE) during turn-off. All tail losses are included in the calculation for EOFF; i.e., the collector current equals zero (ICE = 0). All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification. Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site www.intersil.com 7 ECCOSORBD™ is a trademark of Emerson and Cumming, Inc.