TriQuint AGR18045E 45 w, 1.805 ghz-1.880 ghz, ldmos rf power transistor Datasheet

AGR18045E
45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Introduction
The AGR18045E is a high-voltage, gold-metallized,
laterally diffused metal oxide semiconductor
(LDMOS) RF power field effect transistor (FET) suitable for global system for mobile communication
(GSM), enhanced data for global evolution (EDGE),
and multicarrier class AB power amplifier applications. This device is manufactured using advanced
LDMOS technology offering state-of-the-art performance and reliability. It is packaged in an industrystandard package and is capable of delivering a minimum output power of 45 W, which makes it ideally
suited for today’s RF power amplifier applications.
Figure 1. Available (flanged) Package
Features
Typical performance ratings for GSM EDGE
(f = 1.840 GHz, POUT = 15 W)
— Error vector magnitude (EVM): 1.9%
— Power gain: 15 dB
— Drain efficiency: 32%
— Modulation spectrum:
@ ±400 kHz = –63 dBc.
@ ±600 kHz = –73 dBc.
Typical continuous wave (CW) performance over
entire digital communication system (DCS) band:
— P1dB: 49 W typical (typ).
— Power gain: @ P1dB = 14 dB.
— Efficiency: @ P1dB = 53% typ.
— Return loss: –12 dB.
High-reliability, gold-metallization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
45 W minimum output power.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 26 Vdc, 1.840 GHz, 45 W CW
output power.
Large signal impedance parameters available.
Table 1. Thermal Characteristics
Parameter
Thermal Resistance,
Junction to Case
Sym
Rı JC
Value
1.5
Unit
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Sym Value
Drain-source Voltage
VDSS
65
Gate-source Voltage
VGS –0.5, 15
Drain Current Continuous
ID
Total Dissipation at TC = 25 °C PD
115
Derate Above 25 °C
—
0.67
Operating Junction TemperaTJ
200
ture
Storage Temperature Range TSTG –65, 150
Unit
Vdc
Vdc
Adc
W
W/°C
°C
°C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR18045E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs a human-body model (HBM), a machine model (MM),
and a charged-device model (CDM) qualification requirement in
order to determine ESD-susceptibility limits and protection
design evaluation. ESD voltage thresholds are dependent on the
circuit parameters used in each of the models, as defined by
JEDEC's JESD22-A114B (HBM), JESD22-A115A (MM), and
JESD22-C101A (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR18045E
45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Symbol
Min
Typ
V(BR)DSS
65
—
IDSS
—
Max
Unit
Off Characteristics
38 µA)
Drain-source Breakdown Voltage (VGS = 0 V, ID ==200
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
IGSS
Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V)
—
—
Vdc
—
—
1.5
75
4
µAdc
µAdc
—
S
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.4 A)
GFS
—
3.2
VGS(Q)
3.8
—
Symbol
Gate Threshold Voltage (VDS = 10 V, ID = 150 µA)
VGS(TH)
Drain-source On-voltage (VGS = 10 V, ID = 0.5 A)
VDS(ON)
Gate Quiescent Voltage (VDS = 26 V, ID = 400 mA)
—
—
4.8
—
0.22
—
Min
CRSS
COSS
Vdc
—
Vdc
Typ
Max
Un i t
—
1.0
—
pF
—
24
—
pF
Vdc
Table 5. RF Characteristics
Parameter
Drain-to-gate Capacitance
(VDS = 26 V, VGS = 0 V, f = 1 MHz)
Dynamic Characteristics
Drain-to-source Capacitance
(VDS = 26 V, VGS = 0 V, f = 1 MHz)
(in Supplied
Test Fixture)
Functional Tests* (in
Agere Systems
Supplied Test Fixture)
Power Gain
(VDS = 26 V, POUT = 15 W, IDQ = 400 mA)
Drain Efficiency
(VDS = 26 V, POUT = 15 W, IDQ = 400 mA)
GL
—
15
—
dB
η
—
32
—
%
—
–63
—
dBc
—
49
—
W
EDGE Linearity Characterization
(POUT = 15 W, f = 1.840 GHz, VDS = 26 V, IDQ = 400 mA)
Modulation spectrum @ ±400 kHz
Modulation spectrum @ ±600 kHz
Output Power
(VDS = 26 V, 1 dB gain compression, IDQ = 400 mA)
Input Return Loss
Ruggedness
(VDS = 26 V, POUT = 45 W, IDQ = 400 mA,
VSWR = 10:1 [all angles])
* Across full DCS band, 1.805 GHz—1.880 GHz.
P1dB
IRL
ψ
—
—
–73
–12
—
—
No degradation in output
power.
dBc
dB
AGR18045E
45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Test Circuit Illustrations for AGR18045E
R1
VDD
FB1
VGG
C5
C4
Z1
C1
C6
Z12
C3
C7
C8
C9
C10
Z11
Z2
Z3
Z4
2
1
3
RF INPUT
Z5
Z6
Z7
Z8
Z9
DUT
C2
Z10
RF OUTPUT
PINS: 1. DRAIN, 2. SOURCE, 3. GATE
A. Schematic
J3
C5
C4
J1
C3
FB1
C10
C6 C7 C9
C8
R1
J2
C2
C1
Parts List:
? Microstrip line: Z1 0.840 in. x 0.066 in.; Z2 0.598 in. x 0.066 in.: Z3 0.135 in. x 0.866 in.; Z4 0.175 in. x 0.866 in.; Z5 0.148 in. x 0.650 in.;
Z6 0.212 in. x 0.650 in.; Z7 0.190 in. x 0.320 in.; Z8 0.200 in. x 0.140 in.; Z9 0.253 in. x 0.066 in.; Z10 0.745 in. x 0.066 in.;
Z11 0.050 in. x 0.820 in.; Z12 0.050 in. x 0.950 in.
®
? ATC chip capacitors: C1: 20 pF, 600F200JT250; C2: 10 pF, 100B100JW500; C3, C6: 8.2 pF, 600F8R2CT250.
®
? Murata chip capacitors: C4, C7: 0.047 µF, LLL317R71H473KD01L; C8: 0.01 µF, GRM216R71H103KA01; C9: 0.1 µF, GRM21BR71H104KA01.
®
? Sprague tantalum surface-mount chip capacitors: C9, C10: 22 µF, 35 V, T495X226KO3SAS.
®
? Vishay 1206 size chip resistor: R1: 4.7 kΩ, CRCW12064R75F100.
®
? Amphenol connectors: J1, J2: 901-10019.
®
? WECO connector: J3: 140-A-524-SMD/6.
®
? Fair-Rite ferrite bead: FB1: 2743019447.
®
? Taconic ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
B. Component Layout
Figure 2. AGR18045E Test Circuit
AGR18045E
45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
U CT
0.6
90
IN D
0.
8
10
0.1
0.4
20
50
20
10
5.0
4.0
3.0
1.8
2.0
1.6
1.4
1.2
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
D L OA D <
OW A R
7
HST
0.4
N GT
-170
EL E
V
WA
<Ð
-90
-160
0.2
20
0.4
1.
0
IV
CT
R
,O
o)
0
2.
1.8
1.6
1.4
0.7
1.2
1.0
5
-4
0.14
-80
0.35
0.9
0
-4
0.15
0.36
-110
0.11
-100
-90
0.13
0.1
9
0.0
0
-12
-70
40
-1
0.
0.
07
30
-1
43
0.
8
0.0
2
0.4
0.4
1
0.4
0.39
0.38
F
0.37
0.12
CE
CO
M
(-j
06
Z
X/
-70
0
6
4
-75
IN
DU
0.1
0.3
-5
35
0.8
3
-60
5
0.3
7
VE
-5
0.1
CA P
AC
I TI
-60
-30
32
RE
AC
TA
N
T
0.6
18
0.
0.2
EN
0
-65 .5
0.
PO
N
4
0
-5
-25
31
0.
19
0.
4
0.
0
0.4
0.48
)
/ Yo
(-jB
CE
0.6
5
0
-20
-85
AN
PT
CE
US
ES
0.8
-80
0
1.
3.
0.3
0.0
4.0
0.2
5
0.4
-15
4
0.0
0
-15
5.0
0.4
0.2
8
f3
-4
4
0.
f1
0.2
2
ZS
0.2
9
0.2
1
-30
0.3
f1
ZL
-10
8
0.
-20
0.2
f3
0.6
10
0.1
6
50
0.49
0.25
0.2
6
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL ECTI ON COEFFI CI EN T I N D EG
REES
L E OF
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
L E OF
ANG
Z0 = 4 Ω
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
0.48
± 180
170
Typical Performance Characteristics
GHz (f)
1.805 (f1)
1.843 (f2)
1.880 (f3)
ZS Ω
ZL Ω
(Complex Source Impedance) (Complex Optimum Load Impedance)
3.33 – j7.50
5.76 – j3.74
3.18 – j7.14
5.53 – j3.45
3.03 – j6.88
5.34 – j3.24
GATE (2)
ZS
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
AGR18045E
45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
70
70
60
60
POUT
POUT (W)Z
50
50
40
40
30
30
20
20
10
10
0
0.0
0.5
1.0
1.5
TEST CONDITIONS:
VDD = 26 V, IDQ = 400 mA, f = 1842.5 MHz, CW MEASUREMENT.
2.0
2.5
3.0
3.5
DRAIN EFFICIENCY (%)Z
Typical Performance Characteristics (continued)
0
PIN (W)Z
Figure 4. Output Power and Efficiency vs. Input Power
17
16
IDQ = 550 mA
15
IDQ = 475 mA
IDQ = 400 mA
GPS (dB)Z
14
IDQ = 325 mA
13
IDQ = 250 mA
12
11
10
9
8
0.0
0.1
TEST CONDITIONS:
VDD = 26 V, f = 1842.5 MHz, CW MEASUREMENT.
1.0
10.0
POUT (W)Z
Figure 5. CW Power Gain vs. Output Power
100.0
1000.0
AGR18045E
45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
16.0
0
15.5
GPS
-2
15.0
-4
14.5
14.0
GPS (dB)Z
-8
13.5
-10
13.0
-12
IRL
12.5
-14
12.0
-16
11.5
11.0
1750
IRL (dB)Z
-6
-18
1770
1790
1810
1830
1850
1870
1890
1910
FREQUENCY (MHz)Z
1930
-20
1950
TEST CONDITIONS.
CONDITIONS:
VDD = 26 V, IDQ = 400 mA, PIN = 25 dBm, CW MEASUREMENT.
Figure 6. Wideband Gain and Return Loss
16.0
15.5
IDQ = 550 mA
15.0
IDQ = 475 mA
14.5
GPS (dB)Z
IDQ = 400 mA
14.0
IDQ = 325 mA
13.5
13.0
IDQ = 250 mA
12.5
12.0
0.1
1.0
10.0
POUT (W) (PEP)Z
TEST CONDITIONS.
CONDITIONS:
VDD = 26 V, fc = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING.
Figure 7. Two Tone Power Gain vs. Output Power
100.0
AGR18045E
45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
-20.0
-25.0
-30.0
IDQ = 250 mA
IMD3 (dBc)
-35.0
-40.0
IDQ = 325 mA
-45.0
-50.0
IDQ = 400 mA
IDQ = 550 mA
-55.0
-60.0
IDQ = 475 mA
0.1
1.0
10.0
100.0
POUT (W) (PEP)A
TEST CONDITIONS:
VDD = 26 V, fc = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING.
50
-25
45
-30
40
-35
35
-40
30
-45
25
400 kHz
20
-55
15
GPS
10
600 kHz
5
0
-50
0.1
1.0
POUT (W)Z
10.0
-60
-65
-70
-75
100.0
TEST CONDITIONS:
VDD = 26 V, IDQ = 400 mA, fc = 1842.5 MHz, EDGE MODULATION.
Figure 9. Power Gain, Efficiency, and Spectral Regrowth vs. Output Power
SPECTRAL REGROWTH (dBc)Z
GPS (dB), DRAIN EFFICIENCY (%)Z
Figure 8. Intermodulation Distortion vs. Output Power
AGR18045E
45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
50
10
45
9
40
8
35
7
EVM
30
6
25
5
20
4
15
GPS
3
10
2
5
1
0
1.0
10.0
POUT (W)Z
TEST CONDITIONS:
VDD = 26 V, IDQ = 800 mA, fc = 1842.5 MHz, EDGE MODULATION.
Figure 10. Power Gain, Efficiency, and EVM vs. Output Power
0
100.0
EVM (% RMS)Z
GPS (dB), DRAIN EFFICIENCY (%)Z
Typical Performance Characteristics (continued)
AGR18045E
45 W, 1.805 GHz—1.880 GHz, LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR18045EF
1
A DEVICES
PEAK
AGR18045EU
AGR21045F
YYWWLL
xxxx
ZZZZZZZ
2
XXXX - TRACE CODE
3
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
3
2
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