MITSUBISHI IGBT MODULES CM75TU-24F HIGH POWER SWITCHING USE CM75TU-24F ¡IC ..................................................................... 75A ¡VCES ......................................................... 1200V ¡Insulated Type ¡6-elements in a pack APPLICATION General purpose inverters & Servo controls, etc OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 90 ±0.25 23 12 4–φ5.5 MOUNTING HOLES CM G E 12 11 G E V 12 23 21.7 GuN EuN GvN EvN GwN EwN E G E W 23 11 12 21.7 11 Tc measured point 8.1 7.1 +1 29 –0.5 0.8 4 LABEL 0.5 G 48.5 11 14.4 21.7 E 3.75 G U 5–M5NUTS Tc measured point 2.8 11 21.7 E 26 102 80 ±0.25 11 G 17 P N GuP EuP GvP EvP GwP EwP (4) 3.75 12 P G UP GVP RTC EUP U G UN RTC EUN G WP RTC E VP V G VN RTC E VN RTC EWP W GWN RTC E WN N CIRCUIT DIAGRAM Feb. 2009 MITSUBISHI IGBT MODULES CM75TU-24F HIGH POWER SWITCHING USE MAXIMUM RATINGS (Tj = 25°C, unless otherwise specified) Symbol VCES VGES IC ICM IE (Note 1) IEM (Note 1) PC (Note 3) Tj Tstg Viso Parameter Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage — Torque strength — Weight Conditions G-E Short C-E Short TC = 25°C Pulse TC = 25°C Pulse TC = 25°C Ratings 1200 ±20 75 150 75 150 450 –40 ~ +150 –40 ~ +125 2500 2.5 ~ 3.5 2.5 ~ 3.5 680 (Note 2) (Note 2) Terminals to base plate, f = 60Hz, AC 1 minute Main terminals M5 screw Mounting M5 screw Typical value Unit V V A A W °C °C Vrms N•m N•m g ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise specified) Parameter Symbol Test conditions Limits Typ. — Max. 1 Unit ICES Collector cutoff current VCE = VCES, VGE = 0V Min. — VGE(th) Gate-emitter threshold voltage IC = 7.5mA, VCE = 10V 5 6 7 V IGES Gate leakage current ±VGE = VGES, VCE = 0V — — — — — — — — — — — — — — — — — — 4.2 — 1.8 1.9 — — — 825 — — — — — 3.1 — — — 0.09 — — 20 2.4 — 29 1.3 0.75 — 100 50 400 300 150 — 3.2 0.28 0.47 — 0.22*3 µA VCE(sat) Collector-emitter saturation voltage Cies Coes Cres QG td(on) tr td(off) tf trr (Note 1) Qrr (Note 1) VEC(Note 1) Rth(j-c)Q Rth(j-c)R Rth(c-f) Rth(j-c’)Q RG Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Reverse recovery time Reverse recovery charge Emitter-collector voltage Thermal resistance*1 Contact thermal resistance Thermal resistance External gate resistance Tj = 25°C Tj = 125°C IC = 75A, VGE = 15V VCE = 10V VGE = 0V VCC = 600V, IC = 75A, VGE = 15V VCC = 600V, IC = 75A VGE = ±15V RG = 4.2Ω, Inductive load IE = 75A IE = 75A, VGE = 0V IGBT part (1/6 module) FWDi part (1/6 module) Case to heat sink, Thermal compound applied*2 (1/6 module) Case temperature measured point is just under the chips 42 mA V nF nC ns ns µC V K/W Ω Note 1. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter-collector free-wheel diode (FWDi). 2. Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tjmax rating. 3. Junction temperature (Tj) should not increase beyond 150°C. 4. Pulse width and repetition rate should be such as to cause negligible temperature rise. *1 : Case temperature (Tc) measured point is indicated in OUTLINE DRAWING. *2 : Typical value is measured by using thermally conductive grease of λ = 0.9[W/(m • K)]. *3 : If you use this value, Rth(f-a) should be measured just under the chips. Feb. 2009 2 MITSUBISHI IGBT MODULES CM75TU-24F HIGH POWER SWITCHING USE PERFORMANCE CURVES COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 125 VGE=20V 9.5 9 100 75 8.5 50 8 25 0 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 15 11 10 Tj=25°C 0 0.5 1 1.5 2 2.5 3 3.5 4 VGE = 15V 2.5 2 1.5 1 Tj = 25°C Tj = 125°C 0.5 0 0 50 100 150 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) 5 103 Tj = 25°C 4 3 IC = 150A IC = 75A 2 IC = 30A 1 0 6 8 10 12 14 16 18 Tj = 25°C 102 7 5 3 2 101 7 5 3 2 1 1.5 2 2.5 3 3.5 GATE-EMITTER VOLTAGE VGE (V) EMITTER-COLLECTOR VOLTAGE VEC (V) CAPACITANCE–VCE CHARACTERISTICS (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 7 5 3 2 SWITCHING TIMES (ns) Cies 101 7 5 3 2 100 7 5 3 2 7 5 3 2 100 0.5 20 102 CAPACITANCE Cies, Coes, Cres (nF) 3 COLLECTOR-EMITTER VOLTAGE VCE (V) EMITTER CURRENT IE (A) COLLECTOR CURRENT IC (A) 150 COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) OUTPUT CHARACTERISTICS (TYPICAL) Cres Coes 7 5 tf 3 2 td(off) 102 7 5 3 2 101 7 5 3 2 VGE = 0V 10–1 –1 10 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 100 0 10 COLLECTOR-EMITTER VOLTAGE VCE (V) td(on) tr Conditions: VCC = 600V VGE = ±15V RG = 4.2Ω Tj = 125°C Inductive load 2 3 5 7 101 2 3 5 7 102 COLLECTOR CURRENT IC (A) Feb. 2009 3 MITSUBISHI IGBT MODULES CM75TU-24F HIGH POWER SWITCHING USE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part & FWDi part) 102 7 5 NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth (j–c) REVERSE RECOVERY TIME trr (ns) REVERSE RECOVERY CURRENT lrr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) Irr trr 3 2 101 7 5 Conditions: VCC = 600V VGE = ±15V RG = 4.2Ω Tj = 25°C Inductive load 3 2 100 0 10 2 3 5 7 101 2 5 7 102 3 EMITTER CURRENT IE (A) 10–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 101 7 IGBT part: 5 Per unit base = Rth(j–c) = 0.28K/W 3 FWDi part: 2 Per unit base = Rth(j–c) = 0.47K/W 100 7 5 3 2 3 2 10–1 10–1 10–2 10–2 7 5 3 2 7 5 3 2 10–3 7 5 3 2 7 5 3 2 Single Pulse TC = 25°C 10–3 10–5 2 3 5 710–4 2 3 5 7 10–3 TIME (s) GATE CHARGE CHARACTERISTICS (TYPICAL) GATE-EMITTER VOLTAGE VGE (V) 20 IC = 75A 18 16 VCC = 400V 14 VCC = 600V 12 10 8 6 4 2 0 0 200 400 600 800 1000 1200 GATE CHARGE QG (nC) Feb. 2009 4