CYStech Electronics Corp. Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 1/9 P-Channel Enhancement Mode Power MOSFET MTP4463Q8 BVDSS ID RDSON@VGS=-4.5V, ID=-14A RDSON@VGS=-2.5V, ID=-10A -20V -14A 8.8mΩ(typ) 12.8mΩ(typ) Description The MTP4463Q8 is a P-channel enhancement-mode MOSFET, providing the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free and Halogen-free package Equivalent Circuit MTP4463Q8 Outline SOP-8 G：Gate S：Source D：Drain MTP4463Q8 CYStek Product Specification Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C Continuous Drain Current @TA=70 °C Pulsed Drain Current (Note 1) TA=25 °C Power Dissipation (Note 2) TA=70 °C Operating Junction and Storage Temperature Range Symbol Limits Unit BVDSS VGS ID ID IDM -20 ±12 -14 -11.2 -60 3.1 2 -55~+150 V V A A A W W °C PD Tj ; Tstg Note : 1.Pulse width limited by maximum junction temperature. 2.Surface mounted on 1 in² copper pad of FR-4 board, t≤10s. Thermal Resistance Ratings Thermal Resistance Junction-to-Case Junction-to-Ambient (Note) Symbol RθJC Maximum 20 Unit RθJA 40 °C / W 2 Note : W when mounted on a 1 in pad of 2 oz copper, t≤10s; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tc=25°C, unless otherwise noted) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS VGS(th) IGSS IDSS IDSS RDS(ON) GFS (Note 1) (Note 1) -20 -0.5 - -0.62 8.8 12.8 22 -1.5 ±100 -1 -10 11 17 - - 4107 415 368 42 23 136 74 35 8.3 11 - S VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±12V, VDS=0V VDS=-16V, VGS=0V VDS=-16V, VGS=0, Tj=125°C ID=-14A, VGS=-4.5V ID=-10A, VGS=-2.5V VDS=-10V, ID=-10A pF VDS=-10V, VGS=0, f=1MHz ns VDS=-10V, ID=-1A, VGS=-4.5V, RG=6Ω nC VDS=-10V, ID=-14A, VGS=-4.5V V nA μA mΩ Dynamic Ciss Coss Crss td(ON) tr td(OFF) tf Qg Qgs Qgd MTP4463Q8 (Note 1&2) (Note 1&2) (Note 1&2) (Note 1&2) (Note 1&2) (Note 1&2) (Note 1&2) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol Min. Source-Drain Diode IS ISM(Note 3) VSD(Note 1) trr Qrr - Typ. Max. -0.67 50 36 -2.3 -9.2 -1 - Unit Test Conditions A V ns nC IS=-1.5A, VGS=0V IF=-2.3A, dIF/dt=100A/μs Note : 1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% 2.Independent of operating temperature 3.Pulse width limited by maximum junction temperature Ordering Information Device Package Shipping MTP4463Q8-0-T1-G SOP-8 (Pb-free lead plating and halogen-free package) 2500 pcs/ Tape & Reel MTP4463Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 4/9 Typical Characteristics Normalized Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.4 60 -BVDSS, Normalized Drain-Source Breakdown Voltage -10V, -5V, -4.5V, -4V,-3.5V,-3V,-2.5V -ID, Drain Current (A) 50 40 -2V 30 20 VGS=-1.5V 10 1.2 1 0.8 ID=-250μA, VGS=0V 0.6 0 0 1 2 3 4 -VDS , Drain-Source Voltage(V) -60 5 Static Drain-Source On-State resistance vs Drain Current 180 1.2 VGS=0V VGS=-1.5V -VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) 20 60 100 140 Tj, Junction Temperature(°C) Source Drain Current vs Source-Drain Voltage 100 VGS=-2.5V 10 VGS=-3V VGS=-4.5V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.1 1 10 -ID, Drain Current(A) 0 100 4 8 12 16 -IS, Source Drain Current(A) 20 Normalized Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage 50 1.8 R DS(on) , Normalized Static DrainSource On-State Resistance R DS(on) , Static Drain-Source OnState Resistance(mΩ) -20 ID=-14A 40 30 20 10 1.6 VGS=-4.5V, ID=-14A 1.4 1.2 1 0.8 0.6 RDS(ON) @Tj=25°C : 8.8 mΩ typ. 0.4 0.2 0 0 MTP4463Q8 2 4 6 8 -VGS, Gate-Source Voltage(V) 10 -60 -20 20 60 100 140 Tj, Junction Temperature(°C) 180 CYStek Product Specification Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Normalized Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 1.6 10000 -VGS(th) , Normalized Threshold Voltage Capacitance---(pF) Ciss 1000 C oss Crss 1.4 1.2 ID=-1mA 1 0.8 0.6 ID=-250μA 0.4 0.2 100 0.1 1 10 -VDS, Drain-Source Voltage(V) -75 -50 -25 100 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 Gate Charge Characteristics -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 5 100 10 1 VDS=-10V Pulsed TA=25°C 0.1 VDS=-10V ID=-15A 4 3 2 1 0 0.01 0.1 1 10 -ID, Drain Current(A) 100 0 5 10 15 20 25 30 Qg, Total Gate Charge(nC) 35 40 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 18 100 -ID, Maximum Drain Current(A) 100μs 1ms -ID, Drain Current(A) 0 Tj, Junction Temperature(°C) 10 10ms 100ms 1 1s DC 0.1 TA=25°C, Tj=150°C, VGS=-10V θJA=40°C/W, Single Pulse 16 14 12 10 8 6 4 TA=25°C, VGS=-10V 2 0 0.01 0.1 MTP4463Q8 1 10 -ID, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 300 60 TJ(MAX) =150°C TA=25°C θJA=40°C/W VDS=-10V 50 -ID, Drain Current(A) 250 Power (W) Typical Transfer Characteristics 200 150 100 40 30 20 50 10 0 0.001 0 0.01 0.1 1 Pulse Width(s) 10 100 0 1 2 3 -VGS, Gate-Source Voltage(V) 4 Transient Thermal Response Curves r(t), Normalized Transient Thermal Resistance 10 1 D=0.5 0.2 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM -TA=PDM *RθJA(t) 4.RθJA=40°C/W 0.1 0.05 0.02 0.01 0.01 Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, Square Wave Pulse Duration(s) MTP4463Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTP4463Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTP4463Q8 CYStek Product Specification Spec. No. : C913Q8 Issued Date : 2013.06.18 Revised Date : Page No. : 9/9 CYStech Electronics Corp. SOP-8 Dimension Right side View G Top View A Marking: I C B H Device Name 4463 Date Code J E D K Front View Part A Part A M L N 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 O F *: Typical Inches Min. Max. 0.1909 0.2007 0.1515 0.1555 0.2283 0.2441 0.0480 0.0519 0.0145 0.0185 0.1472 0.1527 0.0570 0.0649 0.1889 0.2007 DIM A B C D E F G H Millimeters Min. Max. 4.85 5.10 3.85 3.95 5.80 6.20 1.22 1.32 0.37 0.47 3.74 3.88 1.45 1.65 4.80 5.10 DIM I J K L M N O Inches Min. Max. 0.0019 0.0078 0.0118 0.0275 0.0074 0.0098 0.0145 0.0204 0.0118 0.0197 0.0031 0.0051 0.0000 0.0059 Millimeters Min. Max. 0.05 0.20 0.30 0.70 0.19 0.25 0.37 0.52 0.30 0.50 0.08 0.13 0.00 0.15 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTP4463Q8 CYStek Product Specification