Freescale MRF6S27015NR1 Rf power field effect transistors n-channel enhancement-mode lateral mosfet Datasheet

Freescale Semiconductor
Technical Data
Document Number: MRF6S27015N
Rev. 0, 8/2006
RF Power Field Effect Transistors
MRF6S27015NR1
MRF6S27015GNR1
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 2000 to
2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class
AB and Class C amplifier applications.
• Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ =
160 mA, Pout = 3 Watts Avg., Full Frequency Band, Channel Bandwidth =
3.84 MHz, PAR = 8.5 dB @ 0.01% Probability on CCDF.
Power Gain — 14 dB
Drain Efficiency — 22%
ACPR @ 5 MHz Offset — - 45 dBc in 3.84 MHz Channel Bandwidth
• Capable of Handling 5:1 VSWR, @ 28 Vdc, 2600 MHz, 15 Watts CW
Output Power
Features
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Internally Matched for Ease of Use
• Qualified Up to a Maximum of 32 VDD Operation
• Integrated ESD Protection
• 200°C Capable Plastic Package
• RoHS Compliant
• In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel.
2300- 2700 MHz, 3 W AVG., 28 V
SINGLE W - CDMA
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 1265 - 08, STYLE 1
TO - 270- 2
PLASTIC
MRF6S27015NR1
CASE 1265A - 02, STYLE 1
TO - 270- 2 GULL
PLASTIC
MRF6S27015GNR1
Table 1. Maximum Ratings
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
- 0.5, +68
Vdc
Gate- Source Voltage
VGS
- 0.5, +12
Vdc
Storage Temperature Range
Tstg
- 65 to +175
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
Table 2. Thermal Characteristics
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 7.5 W Avg., Two - Tone
Case Temperature 79°C, 3 W CW
RθJC
2.0
2.2
°C/W
Table 3. ESD Protection Characteristics
Test Methodology
Class
Human Body Model (per JESD22 - A114)
1A (Minimum)
Machine Model (per EIA/JESD22 - A115)
A (Minimum)
Charge Device Model (per JESD22 - C101)
IV (Minimum)
1. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF
calculators by product.
2. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes - AN1955.
© Freescale Semiconductor, Inc., 2006. All rights reserved.
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
1
Table 4. Moisture Sensitivity Level
Test Methodology
Per JESD 22 - A113, IPC/JEDEC J - STD - 020
Rating
Package Peak Temperature
Unit
3
260
°C
Table 5. Electrical Characteristics (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 68 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
μAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
500
nAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 40 μAdc)
VGS(th)
1.5
2.2
3.5
Vdc
Gate Quiescent Voltage (1)
(VDS = 28 Vdc, ID = 160 mAdc, Measured in Functional Test)
VGS(Q)
2
2.8
3.5
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 0.4 Adc)
VDS(on)
—
0.4
0.33
Vdc
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
11.6
—
pF
Output Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
0.02
—
pF
Characteristic
Off Characteristics
On Characteristics
Dynamic Characteristics (2)
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 160 mA, Pout = 3 W Avg., f = 2600 MHz, Single - Carrier
W - CDMA, 3.84 MHz Channel Bandwidth Carriers. ACPR measured in 3.84 MHz Channel Bandwidth @ ±5 MHz Offset. PAR = 8.5 dB @
0.01% Probability on CCDF.
Power Gain
Gps
12.5
14
16
dB
Drain Efficiency
ηD
19
22
—
%
ACPR
—
- 45
- 42
dBc
IRL
—
- 18
-9
dB
Adjacent Channel Power Ratio
Input Return Loss
1. VGG = 11/10 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit
schematic.
2. Part internally input matched.
MRF6S27015NR1 MRF6S27015GNR1
2
RF Device Data
Freescale Semiconductor
R1
VBIAS
VSUPPLY
+
R2
C11
C1
C2
C4
Z7
C7
C8
Z18
RF
INPUT
R3
Z1
Z2
Z3
Z4
Z5
Z8
Z9
Z10
Z11
Z13
Z12
Z15
Z14
Z16
Z6
C3
Z17
RF
OUTPUT
C6
Z19
DUT
VSUPPLY
C5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.503″ x 0.066″ Microstrip
0.905″ x 0.066″ Microstrip
0.371″ x 0.300″ x 0.049″ Taper
0.041″ x 0.016″ Microstrip
0.245″ x 0.851″ Microstrip
0.248″ x 0.851″ Microstrip
0.973″ x 0.050″ Microstrip
0.085″ x 0.485″ Microstrip
0.091″ x 0.667″ Microstrip
0.138″ x 0.816″ Microstrip
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
PCB
C9
C10
0.143″ x 0.816″ Microstrip
0.101″ x 0.667″ Microstrip
0.073″ x 0.485″ Microstrip
0.120″ x 0.021″ Microstrip
0.407″ x 0.170″ Microstrip
0.714″ x 0.066″ Microstrip
0.496″ x 0.066″ Microstrip
0.475″ x 0.050″ Microstrip
0.480″ x 0.050″ Microstrip
Taconic RF - 35, 0.030″, εr = 3.5
Figure 1. MRF6S27015NR1(GNR1) Test Circuit Schematic
Table 6. MRF6S27015NR1(GNR1) Test Circuit Component Designations and Values
Part
Description
Part Number
Manufacturer
C1
100 nF Chip Capacitor
CDR33BX104AKWS
AVX
C2
4.7 pF Chip Capacitor
600B4R7BT250XT
ATC
C3
9.1 pF Chip Capacitor
600B9R1BT250XT
ATC
C4, C5, C6
8.2 pF Chip Capacitors
600B8R2BT250XT
ATC
C7, C8, C9, C10
10 μF, 50 V Chip Capacitors
GRM55DR61H106KA88L
Murata
C11
10 μF, 35 V Tantalum Chip Capacitor
T491D106K035AS
Kemet
R1
1 KΩ, 1/4 W Chip Resistor
CRCW12061001F100
Vishay
R2
10 KΩ,1/4 W Chip Resistor
CRCW12061002F100
Vishay
R3
10 Ω, 1/4 W Chip Resistor
CRCW120610R0F100
Vishay
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
3
C11
R2
C1
C4
C2
R1
C7
C8
R3
C6
CUT OUT AREA
C3
C9
C10
C5
MRF6S27015N Rev. 3
Figure 2. MRF6S27015NR1(GNR1) Test Circuit Component Layout
MRF6S27015NR1 MRF6S27015GNR1
4
RF Device Data
Freescale Semiconductor
15
23
Gps, POWER GAIN (dB)
14
13
12
Gps
22
ηD
IRL
11
10
21
VDD = 28 Vdc, Pout = 3 W (Avg.)
IDQ = 160 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth, PAR = 8.5 dB
@ 0.01% Probability (CCDF)
20
−30
−40
ACPR
9
−50
ALT1
8
−60
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
−5
−10
−15
−20
−25
IRL, INPUT RETURN LOSS (dB)
24
ACPR (dBc), ALT1 (dBc)
16
ηD, DRAIN
EFFICIENCY (%)
TYPICAL CHARACTERISTICS
f, FREQUENCY (MHz)
Figure 3. Single - Carrier W - CDMA Broadband Performance
@ Pout = 3 Watts Avg.
Gps, POWER GAIN (dB)
30
ηD
11
10
IRL
VDD = 28 Vdc, Pout = 6 W (Avg.)
IDQ = 160 mA, Single−Carrier W−CDMA
3.84 MHz Channel Bandwidth
PAR = 8.5 dB @ 0.01% Probability (CCDF)
29
28
−30
9
ACPR
−40
8
ALT1
−50
7
−60
2500 2520 2540 2560 2580 2600 2620 2640 2660 2680 2700
−5
−10
−15
−20
−25
IRL, INPUT RETURN LOSS (dB)
31
Gps
13
12
ηD, DRAIN
EFFICIENCY (%)
14
32
ACPR (dBc), ALT1 (dBc)
15
f, FREQUENCY (MHz)
Figure 4. Single - Carrier W - CDMA Broadband Performance
@ Pout = 6 Watts Avg.
−10
IDQ = 240 mA
Gps, POWER GAIN (dB)
190 mA
15
160 mA
14
130 mA
13
80 mA
VDD = 28 Vdc
f1 = 2592 MHz, f2 = 2605 MHz
Two−Tone Measurements
12
10
1
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus
Output Power
IMD, THIRD ORDER
INTERMODULATION DISTORTION (dBc)
16
VDD = 28 Vdc
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements
−15
−20
−25
IDQ = 80 mA
−30
240 mA
−35
−40
−45
190 mA
−50
130 mA
−55
160 mA
−60
1
10
Pout, OUTPUT POWER (WATTS) PEP
Figure 6. Third Order Intermodulation Distortion
versus Output Power
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
5
TYPICAL CHARACTERISTICS
−25
IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
−15
VDD = 28 Vdc, IDQ = 160 mA
f1 = 2595 MHz, f2 = 2605 MHz
Two−Tone Measurements, 10 MHz Tone Spacing
−20
−25
−30
−35
3rd Order
−40
−45
−50
5th Order
−55
−60
7th Order
−65
1
VDD = 28 Vdc, Pout = 15 W (PEP)
IDQ = 160 mA
−30
−35
IM3−U
Two−Tone Measurements
(f1 + f2)/2 = Center Frequency of 2600 MHz
−40
IM3−L
IM5−U
−45
IM5−L
IM7−U
−50
IM7−L
−55
−60
1
10
10
100
Pout, OUTPUT POWER (WATTS) PEP
TWO−TONE SPACING (MHz)
Figure 7. Intermodulation Distortion Products
versus Output Power
Figure 8. Intermodulation Distortion Products
versus Tone Spacing
50
Pout, OUTPUT POWER (dBm)
Ideal
P6dB = 44.3 dBm (27 W)
49
48
P3dB = 43.7 dBm (23 W)
47
46
45
P1dB = 43 dBm (20 W)
44
Actual
43
42
VDD = 28 Vdc, IDQ = 160 mA
Pulsed CW, 12 μsec(on), 1% Duty Cycle
f = 2600 MHz
41
40
26
27
28
29
30
31
32
33
34
35
36
Pin, INPUT POWER (dBm)
50
45
40
−20
VDD = 28 Vdc, IDQ = 160 mA, f = 2600 MHz
Single−Carrier W−CDMA, 3.84 MHz Channel
Bandwidth, PAR = 8.5 dB @ 0.01%
Probability (CCDF)
−25
−30
−35
35
−40
30
ALT1
25
ACPR
−45
ηD
−50
20
15
Gps
ACPR (dBc), ALT1 (dBc)
ηD, DRAIN EFFICIENCY (%), Gps, POWER GAIN (dBc)
Figure 9. Pulsed CW Output Power versus
Input Power
−55
−60
10
5
−65
10
1
Pout, OUTPUT POWER (WATTS) AVG.
Figure 10. Single - Carrier W - CDMA ACPR,
ALT1, Power Gain and Drain Efficiency
versus Output Power
MRF6S27015NR1 MRF6S27015GNR1
6
RF Device Data
Freescale Semiconductor
TYPICAL CHARACTERISTICS
18
25_C
85_C
25_C
48
40
15
85_C
14
32
24
13
ηD
12
16
VDD = 28 Vdc
IDQ = 160 mA
f = 2600 MHz
11
12
32 V
28 V
VDD = 24 V
11
10
0
1
13
8
10
10
5
10
15
25
20
30
Pout, OUTPUT POWER (WATTS) CW
Pout, OUTPUT POWER (WATTS) CW
Figure 11. Power Gain and Drain Efficiency
versus CW Output Power
Figure 12. Power Gain versus Output Power
25
109
3
VDD = 28 Vdc, IDQ = 160 mA
WiMAX, 802.16, 64 QAM 3/4, 4 Bursts
7 MHz Channel Bandwidth, f = 2600 MHz
2.5
2
15
1.5
10
ηD
5
EVM
1
0.5
0
21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36
Pout, OUTPUT POWER (dBm)
Figure 13. Drain Efficiency and Error Vector
Magnitude versus Output Power
MTTF FACTOR (HOURS x AMPS2)
ηD, DRAIN EFFICIENCY (%)
14
Gps, POWER GAIN (dB)
TC = −30_C
ηD, DRAIN EFFICIENCY (%)
Gps
16
IDQ = 160 mA
f = 2600 MHz
56
−30_C
EVM, ERROR VECTOR MAGNITUDE (%)
Gps, POWER GAIN (dB)
17
20
15
64
108
107
106
105
90
110
130
150
170
190
210
230
250
TJ, JUNCTION TEMPERATURE (°C)
This above graph displays calculated MTTF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTTF factor by ID2 for MTTF in a particular application.
Figure 14. MTTF Factor versus Junction Temperature
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
7
W - CDMA TEST SIGNAL
100
−10
3.84 MHz
Channel BW
−20
10
1
−40
−50
0.1
W−CDMA. ACPR Measured in 3.84 MHz Channel
Bandwidth @ ±5 MHz Offset. IM3 Measured in
3.84 MHz Bandwidth @ ±10 MHz Offset. PAR =
8.5 dB @ 0.01% Probability on CCDF
0.01
(dB)
PROBABILITY (%)
−30
−60
−70
0.001
−80
−90
0.0001
0
2
4
6
8
10
−ACPR in 3.84 MHz
Integrated BW
−100
−ACPR in 3.84 MHz
Integrated BW
PEAK−TO−AVERAGE (dB)
Figure 15. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single - Carrier Test Signal
−110
−9
−7.2 −5.4
−3.6 −1.8
0
1.8
3.6
5.4
7.2
9
f, FREQUENCY (MHz)
Figure 16. Single - Carrier W - CDMA Spectrum
MRF6S27015NR1 MRF6S27015GNR1
8
RF Device Data
Freescale Semiconductor
Zo = 5 Ω
f = 2700 MHz
Zload
f = 2500 MHz
f = 2700 MHz
f = 2500 MHz
Zsource
VDD = 28 Vdc, IDQ = 160 mA, Pout = 3 W Avg.
f
MHz
Zsource
W
Zload
W
2500
4.059 - j2.284
3.380 - j0.543
2525
3.679 - j2.593
3.265 - j0.546
2550
3.006 - j2.574
3.077 - j0.449
2575
2.355 - j2.190
2.892 - j0.336
2600
2.075 - j1.657
2.727 - j0.182
2625
1.930 - j1.179
2.564 - j0.034
2650
1.973 - j0.771
2.435 + j0.140
2675
2.017 - j0.557
2.286 + j0.340
2700
2.024 - j0.379
2.227 + j0.538
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 17. Series Equivalent Source and Load Impedance
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
9
Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ = 160 mA, TC = 25°C, 50 ohm system)
f
MHz
MH
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
500
0.984
- 178.2
1.453
39.2
0.001
- 109.8
0.870
- 122.3
550
0.984
- 179.0
1.180
36.5
0.000
- 121.0
0.888
- 127.6
600
0.986
180.0
0.958
34.4
0.000
159.6
0.901
- 132.0
650
0.987
179.0
0.776
33.0
0.001
118.4
0.911
- 135.8
700
0.987
178.1
0.627
32.3
0.001
106.5
0.921
- 139.1
750
0.986
177.3
0.502
32.5
0.001
104.2
0.931
- 142.1
800
0.985
176.5
0.397
34.1
0.002
96.0
0.940
- 144.8
850
0.985
175.8
0.308
37.7
0.002
95.6
0.944
- 147.3
900
0.984
175.1
0.235
44.5
0.003
94.0
0.951
- 149.5
950
0.983
174.5
0.180
56.5
0.003
91.2
0.956
- 151.5
1000
0.982
173.8
0.146
75.6
0.003
91.2
0.962
- 153.4
1050
0.981
173.2
0.142
98.9
0.004
89.9
0.965
- 155.2
1100
0.980
172.5
0.163
118.0
0.004
89.2
0.969
- 156.8
1150
0.978
171.9
0.199
129.9
0.005
88.9
0.973
- 158.3
1200
0.976
171.2
0.243
136.6
0.005
87.4
0.976
- 159.8
1250
0.974
170.5
0.291
140.2
0.006
86.5
0.980
- 161.1
1300
0.970
169.8
0.342
141.8
0.006
86.3
0.983
- 162.4
1350
0.966
169.0
0.395
142.1
0.006
84.6
0.986
- 163.7
1400
0.960
168.3
0.452
141.5
0.006
84.8
0.988
- 164.9
1450
0.953
167.5
0.514
140.2
0.007
86.9
0.990
- 166.1
1500
0.945
166.6
0.580
138.4
0.007
92.5
0.993
- 167.3
1550
0.933
165.8
0.655
135.9
0.009
100.3
0.992
- 168.4
1600
0.918
164.9
0.738
132.5
0.011
93.7
0.994
- 169.4
1650
0.901
164.1
0.828
128.4
0.013
83.6
0.996
- 170.4
1700
0.879
163.2
0.925
123.5
0.014
75.4
0.997
- 171.6
1750
0.850
162.5
1.030
117.6
0.014
69.1
0.998
- 172.8
1800
0.815
162.2
1.139
110.8
0.015
62.8
0.995
- 173.9
1850
0.775
162.5
1.246
102.7
0.016
55.8
0.991
- 175.0
1900
0.734
164.0
1.337
93.6
0.016
48.2
0.984
- 176.0
1950
0.700
167.0
1.399
83.5
0.015
40.3
0.976
- 176.9
2000
0.683
171.0
1.420
73.1
0.015
33.2
0.966
- 177.6
2050
0.687
175.1
1.396
62.9
0.014
26.5
0.957
- 178.0
2100
0.710
178.5
1.338
53.4
0.012
22.1
0.951
- 178.3
2150
0.741
- 179.3
1.259
45.0
0.011
19.8
0.948
- 178.6
2200
0.774
- 178.2
1.169
37.6
0.010
19.7
0.947
- 178.9
2250
0.805
- 177.8
1.079
31.1
0.009
19.7
0.947
- 179.2
2300
0.832
- 177.9
0.993
25.8
0.008
19.6
0.948
- 179.5
2350
0.855
- 178.2
0.917
21.2
0.007
22.6
0.950
- 179.9
MRF6S27015NR1 MRF6S27015GNR1
10
RF Device Data
Freescale Semiconductor
Table 7. Common Source Scattering Parameters (VDD = 28 V, IDQ = 160 mA, TC = 25°C, 50 ohm system) (continued)
f
MHz
MH
S11
S21
S12
S22
|S11|
∠φ
|S21|
∠φ
|S12|
∠φ
|S22|
∠φ
2400
0.873
- 178.8
0.848
17.2
0.006
31.2
0.953
179.7
2450
0.887
- 179.4
0.786
13.7
0.006
42.2
0.955
179.2
2500
0.897
- 179.9
0.731
10.6
0.007
45.6
0.956
178.7
2550
0.907
179.6
0.682
7.9
0.007
46.5
0.957
178.2
2600
0.914
179.1
0.639
5.5
0.007
48.0
0.958
177.8
2650
0.919
178.8
0.600
3.3
0.007
47.0
0.960
177.2
2700
0.926
178.3
0.566
1.3
0.007
45.8
0.962
176.8
2750
0.931
177.9
0.534
- 0.6
0.006
52.1
0.964
176.2
2800
0.936
177.4
0.505
- 2.2
0.006
62.3
0.965
175.7
2850
0.940
177.0
0.480
- 3.8
0.006
69.8
0.966
175.2
2900
0.942
176.6
0.457
- 5.2
0.007
73.2
0.967
174.7
2950
0.945
176.3
0.436
- 6.5
0.007
78.7
0.968
174.2
3000
0.947
175.8
0.416
- 7.6
0.008
85.1
0.969
173.8
3050
0.949
175.6
0.399
- 8.7
0.009
87.9
0.969
173.2
3100
0.950
175.1
0.382
- 9.6
0.011
88.2
0.970
172.9
3150
0.953
174.8
0.368
- 10.5
0.012
86.9
0.972
172.6
3200
0.955
174.5
0.355
- 11.5
0.014
85.1
0.974
172.1
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
11
PACKAGE DIMENSIONS
MRF6S27015NR1 MRF6S27015GNR1
12
RF Device Data
Freescale Semiconductor
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
13
MRF6S27015NR1 MRF6S27015GNR1
14
RF Device Data
Freescale Semiconductor
B
E1
2X
D3
2X
E4
aaa
D
aaa
M
PIN ONE ID
L1
C A
M
e
2X
E
bbb
M
A
C B
A
A2
2X
c1
E2
E5
D
SEATING
PLANE
E5
E3
PIN 2
D2
PIN 3
A1
DETAIL Y
DETAIL Y
H
L
D1
b1
C A
GAGE
PLANE
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
ÇÇÇÇÇ
EXPOSED
HEATSINK AREA
PIN 1
NOTES:
1. CONTROLLING DIMENSION: INCH.
2. INTERPRET DIMENSIONS AND TOLERANCES
PER ASME Y14.5M−1994.
3. DATUM PLANE −H− IS LOCATED AT TOP OF LEAD
AND IS COINCIDENT WITH THE LEAD WHERE
THE LEAD EXITS THE PLASTIC BODY AT THE
TOP OF THE PARTING LINE.
4. DIMENSIONS “D1" AND “E1" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .006 PER SIDE. DIMENSIONS “D1" AND “E1" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −H−.
5. DIMENSION b1 DOES NOT INCLUDE DAMBAR
PROTRUSION. ALLOWABLE DAMBAR
PROTRUSION SHALL BE .005 TOTAL IN EXCESS
OF THE b1 DIMENSION AT MAXIMUM MATERIAL
CONDITION.
6. DATUMS −A− AND −B− TO BE DETERMINED AT
DATUM PLANE −H−.
7. DIMENSIONS “D" AND “E2" DO NOT INCLUDE
MOLD PROTRUSION. ALLOWABLE PROTRUSION
IS .003 PER SIDE. DIMENSIONS “D" AND “E2" DO
INCLUDE MOLD MISMATCH AND ARE DETER−
MINED AT DATUM PLANE −D−.
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
L
L1
b1
c1
e
aaa
INCHES
MIN
MAX
.078
.082
.001
.004
.077
.088
.416
.424
.378
.382
.290
.320
.016
.024
.316
.324
.238
.242
.066
.074
.150
.180
.058
.066
.231
.235
.018
.024
.01 BSC
.193
.199
.007
.011
°
2
8°
.004
MILLIMETERS
MIN
MAX
1.98
2.08
0.02
0.10
1.96
2.24
10.57
10.77
9.60
9.70
7.37
8.13
0.41
0.61
8.03
8.23
6.04
6.15
1.68
1.88
3.81
4.57
1.47
1.68
5.87
5.97
4.90
5.06
0.25 BSC
4.90
5.06
0.18
0.28
°
2
8°
0.10
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
BOTTOM VIEW
CASE 1265A - 02
ISSUE B
TO - 270 - 2 GULL
PLASTIC
MRF6S27015GN
MRF6S27015NR1 MRF6S27015GNR1
RF Device Data
Freescale Semiconductor
15
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© Freescale Semiconductor, Inc. 2006. All rights reserved.
MRF6S27015NR1 MRF6S27015GNR1
Document Number: MRF6S27015N
Rev. 0, 8/2006
16
RF Device Data
Freescale Semiconductor