Diodes DMN6075S 60v n-channel enhancement mode mosfet Datasheet

DMN6075S
60V N-CHANNEL ENHANCEMENT MODE MOSFET
Summary
Features and Benefits
Description
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This new generation MOSFET is designed to minimize the on-state
resistance (RDS(ON)) and yet maintain superior switching performance,
Mechanical Data
RDS(ON) max
ID max
TA = +25°C
85 mΩ @ VGS = 10V
2.5A
120 mΩ @ VGS = 4.5V
2.0A
V(BR)DSS
ADVANCE INFORMATION
60V
making it ideal for high efficiency power management applications.
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Applications
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DC-DC Converters
Power Management Functions
Backlighting
N MOSFET
Low On-Resistance
Low Input Capacitance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Case: SOT-23
Case Material: Molded Plastic, “Green” Molding Compound;
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram Below
Weight: 0.008 grams (Approximate)
D
SOT-23
D
G
S
G
S
Top View
Top View
Pin Configuration
Top View
Ordering Information (Note 4)
Notes:
Product
Reel size (inches)
Tape width (mm)
Quantity per reel
DMN6075S-7
DMN6075S-13
7
13
8
8
3,000
10,000
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
SOT-23
S67 = Product Type Marking Code
YM = Date Code Marking
Y or Y̅ = Year (ex: B = 2014)
M = Month (ex: 9 = September)
Date Code Key
Year
Code
Month
Code
2014
B
Jan
1
2015
C
Feb
2
DMN6075S
Document number: DS37023 Rev. 4 - 2
Mar
3
2016
D
Apr
4
May
5
2017
E
Jun
6
1 of 7
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2018
F
Jul
7
Aug
8
2019
G
Sep
9
Oct
O
2020
H
Nov
N
Dec
D
April 2015
© Diodes Incorporated
DMN6075S
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
ADVANCE INFORMATION
Symbol
Value
Units
Drain-Source Voltage
VDSS
60
V
Gate-Source Voltage
VGSS
±20
V
A
Continuous Drain Current (Note 5) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
2.0
1.5
Continuous Drain Current (Note 6) VGS = 10V
Steady
State
TA = +25°C
TA = +70°C
ID
2.5
2.0
A
IDM
12
A
Value
Units
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
Total Power Dissipation (Note 5)
Steady State
Steady State
Thermal Resistance, Junction to Ambient (Note 6)
Operating and Storage Temperature Range
157
°C/W
1.15
PD
TA = +70°C
W
0.5
RJA
TA = +25°C
Total Power Dissipation (Note 6)
Electrical Characteristics
PD
TA = +70°C
Thermal Resistance, Junction to Ambient (Note 5)
0.8
W
0.7
RJA
110
°C/W
TJ, TSTG
-55 to +150
°C
(@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Symbol
Min
Typ
Max
Unit
Test Condition
BVDSS
60
—
—
V
VGS = 0V, ID = 250μA
Zero Gate Voltage Drain Current TJ = +25°C
IDSS
—
—
1.0
µA
VDS = 60V, VGS = 0V
Gate-Source Leakage
IGSS
—
—
±100
nA
VGS = ±16V, VDS = 0V
VGS(th)
1
—
3
V
VDS = VGS, ID = 250μA
69
85
75
120
—
1.2
V
Drain-Source Breakdown Voltage
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
RDS(ON)
—
VSD
—
Input Capacitance
Ciss
—
606
—
pF
Output Capacitance
Coss
—
32.6
—
pF
Reverse Transfer Capacitance
Crss
—
24.6
—
pF
Gate Resistance
Rg
—
1.5
—
Ω
Total Gate Charge (VGS =10V)
Qg
—
12.3
—
nC
Total Gate Charge (VGS =4.5V)
Qg
—
5.6
—
nC
Gate-Source Charge
Qgs
—
1.7
—
nC
Gate-Drain Charge
Qgd
—
1.9
—
nC
Turn-On Delay Time
tD(on)
—
3.5
—
ns
Turn-On Rise Time
tr
—
4.1
—
ns
Turn-Off Delay Time
tD(off)
—
35
—
ns
tf
—
11
—
ns
Static Drain-Source On-Resistance
Diode Forward Voltage
mΩ
VGS = 10V, ID = 3.2A
VGS = 4.5V, ID = 2.8A
VGS = 0V, IS = 2.5A
DYNAMIC CHARACTERISTICS (Note 8)
Turn-Off Fall Time
Notes:
VDS = 20V, VGS = 0V,
f = 1.0MHz
VDS = 0V, VGS = 0V, f = 1MHz
VDS = 30V, ID = 3A
VGS = 10V, VDS = 30V,
RG = 20Ω, RL = 50Ω
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
DMN6075S
Document number: DS37023 Rev. 4 - 2
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© Diodes Incorporated
DMN6075S
ID, DRAIN CURRENT (A)
12.0
VGS = 4.0V
VDS = 5.0V
8
VGS = 3.5V
VGS =5.0V
9.0
6.0
VGS = 3.0V
3.0
6
TA = 150°C
4
TA = 125°C
TA = -55°C
0
1
2
3
4
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.15
0.12
VGS = 4.5V
0.09
VGS = 10V
0.06
0.03
0
0
0
5
3
6
9
12
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
15
0
0.5
1 1.5 2 2.5 3 3.5 4 4.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.2
ID = 3.2A
0.18
0.16
ID = 2.8A
0.14
0.12
0.1
0.08
0.06
0.04
2
4
6
8
10 12 14 16 18
VGS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Transfer Characteristics
20
2.4
0.2
VGS = 10V
TA = 150°C
0.15
TA = 125°C
TA = 85°C
0.1
TA = 25°C
0.05
TA = -55°C
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.0
TA = 85°C
TA = 25°C
2
VGS = 2.5V
R DS(ON), DRAIN-SOURCE ON-RESISTANCE ()
ADVANCE INFORMATION
10
VGS = 10V
ID, DRAIN CURRENT (A)
15.0
0
VGS = 10V
ID = 5A
2
1.6
VGS = 4.5V
ID = 3A
1.2
0.8
0.4
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 6 On-Resistance Variation with Temperature
ID, DRAIN CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
DMN6075S
Document number: DS37023 Rev. 4 - 2
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2.5
VGS(th), GATE THRESHOLD VOLTAGE (V)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()
0.2
0.18
0.16
VGS = 4.5V
ID = 3A
0.14
0.12
0.1
VGS = 10V
ID = 5A
0.08
0.06
0.04
0.02
2
ID = 1mA
ID = 250µA
1.5
1
0.5
-50
0
-50
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 7 On-Resistance Variation with Temperature
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
10
10000
C T, JUNCTION CAPACITANCE (pF)
IS, SOURCE CURRENT (A)
f = 1MHz
8
6
TA = 150°C
TA = 25°C
TA =125°C
4
TA = -55°C
TA =85°C
2
0
0
0.3
0.6
0.9
1.2
1000
100
Coss
Crss
10
1
1.5
Ciss
0
V SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
10
40
RDS(on)
Limited
9
10
8
7
6
VDS = 30V
ID = 3A
5
4
3
1
PW = 1s
0.1
4
6
8
10
12
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
DMN6075S
Document number: DS37023 Rev. 4 - 2
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PW = 100ms
PW = 10ms
1
2
DC
PW = 10s
0.01
2
00
10
20
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
100
ID, DRAIN CURRENT (A)
VGS GATE THRESHOLD VOLTAGE (V)
ADVANCE INFORMATION
DMN6075S
0.001
0.1
TJ(max) = 150°C
TA = 25°C
VGS = 10V
Single Pulse
DUT on 1 * MRP Board
PW = 1ms
PW = 100µs
1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
100
April 2015
© Diodes Incorporated
DMN6075S
ADVANCE INFORMATION
r(t), TRANSIENT THERMAL RESISTANCE
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
0.01
D = 0.01
D = 0.005
Rthja(t) = r(t) * Rthja
Rthja = 152°C/W
Duty Cycle, D = t1/ t2
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
DMN6075S
Document number: DS37023 Rev. 4 - 2
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DMN6075S
Package Outline Dimensions
ADVANCE INFORMATION
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version.
All 7°
H
K1
GAUGE PLANE
0.25
J
K
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03 0.915
F
0.45
0.60 0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013 0.10
0.05
K
0.890 1.00 0.975
K1
0.903 1.10 1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085 0.150 0.110
a
8°
All Dimensions in mm
a
M
A
L
C
L1
B
D
G
F
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Z
Dimensions
Z
X
Y
C
E
C
X
DMN6075S
Document number: DS37023 Rev. 4 - 2
Value (in mm)
2.9
0.8
0.9
2.0
1.35
E
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DMN6075S
IMPORTANT NOTICE
ADVANCE INFORMATION
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
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website, harmless against all damages.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
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Copyright © 2015, Diodes Incorporated
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DMN6075S
Document number: DS37023 Rev. 4 - 2
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