DMN6075S 60V N-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Mechanical Data RDS(ON) max ID max TA = +25°C 85 mΩ @ VGS = 10V 2.5A 120 mΩ @ VGS = 4.5V 2.0A V(BR)DSS ADVANCE INFORMATION 60V making it ideal for high efficiency power management applications. Applications DC-DC Converters Power Management Functions Backlighting N MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT-23 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.008 grams (Approximate) D SOT-23 D G S G S Top View Top View Pin Configuration Top View Ordering Information (Note 4) Notes: Product Reel size (inches) Tape width (mm) Quantity per reel DMN6075S-7 DMN6075S-13 7 13 8 8 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT-23 S67 = Product Type Marking Code YM = Date Code Marking Y or Y̅ = Year (ex: B = 2014) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2014 B Jan 1 2015 C Feb 2 DMN6075S Document number: DS37023 Rev. 4 - 2 Mar 3 2016 D Apr 4 May 5 2017 E Jun 6 1 of 7 www.diodes.com 2018 F Jul 7 Aug 8 2019 G Sep 9 Oct O 2020 H Nov N Dec D April 2015 © Diodes Incorporated DMN6075S Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic ADVANCE INFORMATION Symbol Value Units Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V A Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 2.0 1.5 Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 2.5 2.0 A IDM 12 A Value Units Pulsed Drain Current (10µs pulse, duty cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) Steady State Steady State Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range 157 °C/W 1.15 PD TA = +70°C W 0.5 RJA TA = +25°C Total Power Dissipation (Note 6) Electrical Characteristics PD TA = +70°C Thermal Resistance, Junction to Ambient (Note 5) 0.8 W 0.7 RJA 110 °C/W TJ, TSTG -55 to +150 °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition BVDSS 60 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±16V, VDS = 0V VGS(th) 1 — 3 V VDS = VGS, ID = 250μA 69 85 75 120 — 1.2 V Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage RDS(ON) — VSD — Input Capacitance Ciss — 606 — pF Output Capacitance Coss — 32.6 — pF Reverse Transfer Capacitance Crss — 24.6 — pF Gate Resistance Rg — 1.5 — Ω Total Gate Charge (VGS =10V) Qg — 12.3 — nC Total Gate Charge (VGS =4.5V) Qg — 5.6 — nC Gate-Source Charge Qgs — 1.7 — nC Gate-Drain Charge Qgd — 1.9 — nC Turn-On Delay Time tD(on) — 3.5 — ns Turn-On Rise Time tr — 4.1 — ns Turn-Off Delay Time tD(off) — 35 — ns tf — 11 — ns Static Drain-Source On-Resistance Diode Forward Voltage mΩ VGS = 10V, ID = 3.2A VGS = 4.5V, ID = 2.8A VGS = 0V, IS = 2.5A DYNAMIC CHARACTERISTICS (Note 8) Turn-Off Fall Time Notes: VDS = 20V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 30V, ID = 3A VGS = 10V, VDS = 30V, RG = 20Ω, RL = 50Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN6075S Document number: DS37023 Rev. 4 - 2 2 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN6075S ID, DRAIN CURRENT (A) 12.0 VGS = 4.0V VDS = 5.0V 8 VGS = 3.5V VGS =5.0V 9.0 6.0 VGS = 3.0V 3.0 6 TA = 150°C 4 TA = 125°C TA = -55°C 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.15 0.12 VGS = 4.5V 0.09 VGS = 10V 0.06 0.03 0 0 0 5 3 6 9 12 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 15 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.2 ID = 3.2A 0.18 0.16 ID = 2.8A 0.14 0.12 0.1 0.08 0.06 0.04 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 2.4 0.2 VGS = 10V TA = 150°C 0.15 TA = 125°C TA = 85°C 0.1 TA = 25°C 0.05 TA = -55°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 TA = 85°C TA = 25°C 2 VGS = 2.5V R DS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 10 VGS = 10V ID, DRAIN CURRENT (A) 15.0 0 VGS = 10V ID = 5A 2 1.6 VGS = 4.5V ID = 3A 1.2 0.8 0.4 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN6075S Document number: DS37023 Rev. 4 - 2 3 of 7 www.diodes.com April 2015 © Diodes Incorporated 2.5 VGS(th), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.2 0.18 0.16 VGS = 4.5V ID = 3A 0.14 0.12 0.1 VGS = 10V ID = 5A 0.08 0.06 0.04 0.02 2 ID = 1mA ID = 250µA 1.5 1 0.5 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 8 Gate Threshold Variation vs. Ambient Temperature 10 10000 C T, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) f = 1MHz 8 6 TA = 150°C TA = 25°C TA =125°C 4 TA = -55°C TA =85°C 2 0 0 0.3 0.6 0.9 1.2 1000 100 Coss Crss 10 1 1.5 Ciss 0 V SD, SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 40 RDS(on) Limited 9 10 8 7 6 VDS = 30V ID = 3A 5 4 3 1 PW = 1s 0.1 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN6075S Document number: DS37023 Rev. 4 - 2 14 4 of 7 www.diodes.com PW = 100ms PW = 10ms 1 2 DC PW = 10s 0.01 2 00 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 100 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN6075S 0.001 0.1 TJ(max) = 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board PW = 1ms PW = 100µs 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 April 2015 © Diodes Incorporated DMN6075S ADVANCE INFORMATION r(t), TRANSIENT THERMAL RESISTANCE 1 D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 Rthja(t) = r(t) * Rthja Rthja = 152°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance DMN6075S Document number: DS37023 Rev. 4 - 2 5 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN6075S Package Outline Dimensions ADVANCE INFORMATION Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. All 7° H K1 GAUGE PLANE 0.25 J K SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 8° All Dimensions in mm a M A L C L1 B D G F Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y Z Dimensions Z X Y C E C X DMN6075S Document number: DS37023 Rev. 4 - 2 Value (in mm) 2.9 0.8 0.9 2.0 1.35 E 6 of 7 www.diodes.com April 2015 © Diodes Incorporated DMN6075S IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMN6075S Document number: DS37023 Rev. 4 - 2 7 of 7 www.diodes.com April 2015 © Diodes Incorporated