RF ECJ-2VB1H104K 280w gan wide-band pulsed power amplifier Datasheet

RFHA1020
280W GaN WIDE-BAND PULSED
POWER AMPLIFIER
Package: Flanged Ceramic, 2 Pin
Features




Wideband Operation: 1.2GHz
to 1.4GHz
Advanced GaN HEMT
Technology
Advanced Heat-Sink
Technology


RF OUT
VD
Pin 2
GND
BASE
Supports Multiple Pulse
Conditions


RF IN
VG
Pin 1 (CUT)
10% to 20% Duty Cycle
100s to 1ms Pulse Width
Integrated Matching
Components for High
Terminal Impedances
50V Operation Typical
Performance:





Output Pulsed Power: 280W
Pulse Width: 100s, Duty Cycle
10%
Small Signal Gain: 15dB
High Efficiency (55%)
- 40°C to 85°C Operating
Temperature
Functional Block Diagram
Product Description
The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-band
pulsed radar, air traffic control and surveillance and general purpose broadband
amplifier applications. Using an advanced high power density Gallium Nitride (GaN)
semiconductor process, these high performance amplifiers achieve high output
power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged
ceramic package. The package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of single, optimized matching networks
that provide wideband gain and power performance in a single amplifier.
Applications



Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
Ordering Information
RFHA1020S2
RFHA1020SB
RFHA1020SQ
RFHA1020SR
RFHA1020TR13
RFHA1020PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece bag
50 Pieces on 7” short reel
250 Pieces on 13” reel
Fully assembled evaluation board 1.2GHz to 1.4GHz; 50V
operation
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
DS120508
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
1 of 10
RFHA1020
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Voltage (VD)
150
V
Gate Voltage (VG)
-8 to +2
V
Gate Current (IG)
155
mA
Operational Voltage
55
V
Ruggedness (VSWR)
10:1
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TC)
-40 to +85
°C
Operating Junction Temperature (TJ)
250
°C
Human Body Model
Class 1A
MTTF (TJ < 200°C)
MTTF (TJ < 250°C)
3.0E + 06
1.4E + 05
Hours
TC = 85°C, DC bias only
0.90
°C/W
TC = 85°C, 100s pulse, 10% duty
cycle
0.18
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RFMD Green: RoHS compliant per EU Directive 2002/95/EC, halogen free
per IEC 61249-2-21, < 1000ppm each of antimony trioxide in polymeric
materials and red phosphorus as a flame retardant, and <2% antimony in
solder.
Thermal Resistance, Rth (junction
to case)
0.34
TC = 85°C, 1ms pulse, 10% duty
cycle
* MTTF - median time to failure for wear-out failure mode (30% IDSS degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT(random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage
and current must not exceed the maximum operating values.
Bias Conditions should also satisfy the following expression: PDISS < (TJ - TC)/RTH J-C and TC = TCASE
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Recommended Operating Conditions
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
-8
Drain Bias Current
Frequency of Operation
-3
50
V
-2
V
1400
MHz
2
mA
VG = -8V, VD = 0V
2.5
mA
VG = -8V, VD = 50V
440
1200
mA
DC Functional Test
IG (OFF) – Gate Leakage
ID (OFF) – Drain Leakage
VGS (TH) – Threshold Voltage
-3.5
V
VD = 50V, ID = 40mA
VDS (ON) – Drain Voltage at High
Current
0.28
V
VG = 0V, ID = 1.5A
14
dB
f = 1200MHz, PIN = 30dBm
dB
f = 1200MHz, PIN = 41.7dBm
dB
f = 1200MHz, PIN = 41.7dBm
RF Functional Test
[1], [2]
Small Signal Gain
Power Gain
12.3
Input Return Loss
-8
Output Power
54
Drain Efficiency
48
2 of 10
50
- 5.5
dBm
f = 1200MHz, PIN = 41.7dBm
%
f = 1200MHz, PIN = 41.7dBm
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120508
RFHA1020
Parameter
Min.
Specification
Typ.
Max.
Unit
RF Functional Test
(continued)
[1], [2]
Small Signal Gain
15
Power Gain
12.3
Input Return Loss
-10
Output Power
54
Drain Efficiency
48
Small Signal Gain
-6
55
14
Power Gain
12.3
Input Return Loss
-8
Output Power
54
Drain Efficiency
48
-5.5
55
dB
f = 1300MHz, PIN = 30dBm
dB
f = 1300MHz, PIN = 41.7dBm
dB
f = 1300MHz, PIN = 41.7dBm
dBm
f = 1300MHz, PIN = 41.7dBm
%
f = 1300MHz, PIN = 41.7dBm
dB
f = 1400MHz, PIN = 30dBm
dB
f = 1400MHz, PIN = 41.7dBm
dB
f = 1400MHz, PIN = 41.7dBm
dBm
f = 1400MHz, PIN = 41.7dBm
%
f = 1400MHz, PIN = 41.7dBm
RF Typical Performance
[1], [2]
Frequency Range
1200
1400
Small Signal Gain
15
Power Gain
13
Gain Variation with Temperature
Output Power (PSAT)
Drain Efficiency
Condition
MHz
dB
dB
-0.015
dB/°C
PIN = 30dBm
POUT = 54.50dBm
At peak output power
54.50
dBm
Peak output power
280
W
Peak output power
55
%
At peak output power
[1] Test Conditions: PW = 100s, DC = 10%, VDSQ = 50V, IDQ = 440mA, T = 25°C.
[2] Performance in a standard tuned test fixture.
DS120508
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
3 of 10
RFHA1020
Typical Performance in Standard Fixed Tune Test Fixture
(T = 25°C, unless otherwise noted)
Efficiency versus Output Power (f = 1300MHz)
Gain versus Output Power (f = 1300MHz)
(Pulsed 10% duty cycle, 1mS, VD = 50V, IDQ= 440mA)
(Pulsed 10% duty cycle, 1mS, VD = 50V, IDQ = 440mA)
19
70
18
60
Eff 85°C
Eff 25°C
17
Eff -40°C
Drain Efficiency (%)
Gain (dB)
50
16
15
40
30
14
Gain 85°C
Gain 25°C
20
13
Gain -40°C
12
10
45
46
47
48
49
50
51
Output Power (dBm)
52
53
54
55
45
46
Input Return Loss versus Output Power (f = 1300MHz)
47
48
49
50
51
Output Power (dBm)
52
53
54
55
Small Signal Performance versus Frequency, POUT = 44dBm
(Pulsed 10% duty cycle, 100μS, VD = 50V, IDQ = 440mA)
(Pulsed 10% duty cycle, 1mS, VD = 50V, IDQ = 440mA)
-6
19
-8
18
-2
Fixed tuned test circuit
-4
-14
-16
Gain (dB)
IRL, Input Return Loss (dB)
-12
-18
-20
-22
-24
IRL 85°C
17
-6
16
-8
15
-10
14
-12
13
-14
12
IRL 25°C
-16
-26
Gain
-30
45
46
47
48
IRL
11
IRL -40°C
-28
49
50
51
Output Power (dBm)
52
53
54
10
1200
55
Input Return Loss (dB)
-10
-18
1220
1240
1260
1280
1300
1320
Frequency (MHz)
1340
1360
1380
-20
1400
1380
1400
Drain Efficiency versus Frequency, POUT = 54dBm
Gain/IRL versus Frequency, POUT = 54dBm
(Pulsed 10% duty cycle, 100μS, VD = 50V, IDQ = 440mA)
(Pulsed 10% duty cyle, 100μS, VD = 50V, IDQ = 440mA)
60
-6
18
Fixed tuned test circuit
59
Fixed tuned test circuit
-8
17
-10
15
-12
14
-14
13
-16
Drain Efficiency (%)
16
Input Return Loss (dB)
Gain (dB)
58
57
56
55
54
53
52
Gain
12
IRL
-18
Eff
51
11
1200
4 of 10
1220
1240
1260
1280
1300
1320
Frequency (MHz)
1340
1360
1380
-20
1400
50
1200
1220
1240
1260
1280
1300
1320
Frequency (MHz)
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
1340
1360
DS120508
RFHA1020
Gain/ Efficiency versus POUT , f = 1300MHz
POUT/DE versus Pulse Width, f = 1300MHz
(Pulsed 10% duty cycle, 100μS, VD = 50V, IDQ = 440mA)
(Pulsed 10% duty cycle, VD = 50V, IDQ = 440mA)
18
70
320
70
310
17
60
300
65
290
40
14
60
270
POUT (W)
15
280
260
55
250
30
240
Drain Efficiency(%)
50
Drain Efficiency (%)
Gain (dB)
16
50
230
Gain
13
Drain Eff
20
12
10
45
46
47
48
49
50
51
Output Power (dBm)
52
53
54
220
Output Power
210
Drain Efficiency
45
200
55
40
10
100
1000
Pulse Width (usec)
POUT/DE versus Duty Cycle, f = 1300MHz
70
325
65
300
60
275
55
250
50
225
Drain Efficiency(%)
POUT(W)
(Pulsed, 100μs pulse, VD = 50V, IDQ = 440mA)
350
45
Output Power
Drain Efficiency
200
40
10
20
30
40
50
60
Duty Cycle (%)
PulsePowerDissipationDeratingCurve
(BasedonMaximumpackagetemperatureandRth)
1200
1mSPulseWidth,10%DutyCycle
1000
PowerDissipation(W)
100SPulseWidth,10%DutyCycle
800
600
400
200
0
0
20
40
60
80
100
120
140
MaximumCaseTemperature(°C)
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
5 of 10
RFHA1020
Package Drawing
(All dimensions in mm)
Pin Names and Descriptions
Pin
1
2
3
6 of 10
Name
VG
VD
GND
Description
Gate – VG RF Input
Drain – VD RF Output
Source – Ground Base
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120508
RFHA1020
Bias Instruction for RFHA1020 Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board.
Evaluation board requires additional external fan cooling.
Connect all supplies before powering up the evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -8V to VG.
4. Apply 50V to VD.
5. Increase VG until drain current reaches 440mA or desired bias point.
6. Turn on the RF input.
IMPORTANT NOTE: Depletion mode device; when biasing the device, VG must be applied before VD. When removing bias, VD
must be removed before VG is removed. Failure to follow this sequence will cause the device to fail.
NOTE: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer
of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended that a small amount of thermal grease is applied to the underside of the device package. Even application and
removal of excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should
then be bolted to the chassis and input and output leads soldered to the circuit board.
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7 of 10
RFHA1020
Evaluation Board Schematic
VDRAIN
VGATE
C8
C7
+
R2
C6
+
C18
R1
C5
C4
C3
C2
C12
R4
C13
L21
L20
L22
L23
R3
C14
C17
C15
L2
J1
RF IN
50  strip
RFHA1020
C1
C22
C16
C19
L1
C21
C11
50  strip
J2
RF OUT
C20
Evaluation Board Bill of Materials
8 of 10
Component
Value
Manufacturer
Part Number
R1, R4
10
Panasonic
ERJ-8GEYJ100V
R2
0
Panasonic
ERJ-8GEY0R00
R3
51
Panasonic
ERJ-8GEYJ510
C1, C2, C11, C13
82pF
Dialectric Labs
800A820JT
C17
56pF
ATC
ATC800A560JT
C5
0.1F
Panasonic
ECJ-2VB1H104K
C6, C15
10000pF
Panasonic
ECJ-2VB1H103K
C16
0.1F
Panasonic
ECJ-2VB1H104K
C8, C18
10F
Panasonic
ECA-2AM100
C20
3.9pF
ATC
800A3R9CT
C21
1.1pF
ATC
800A1R1BT
C22
0.3pF
ATC
800A0R3BT
L20, L21
115, 10A
Steward
28F0181-1SR-10
L22, L23
75, 10A
Steward
35F0121-1SR-10
C3, C4, C7, C12, C14, C19
NOT POPULATED
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120508
RFHA1020
Evaluation Board Layout
Device Impedances
Frequency
Z Source ()
1200MHz
10.7 - j5.0
Z Load (
33.9 - j10
1300MHz
9.48 - j3.24
34.2 - j10.9
1400MHz
8.2 - j1.2
34.5 - j12.33
Note: Device impedances reported are the measured evaluation board impedances chosen for a tradeoff of efficiency, peak
power, and linear performance across the entire frequency bandwidth.
EvaluationBoard
Matching
Network
EvaluationBoard
Matching
Network
ZSOURCE
DS120508
ZLOAD
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9 of 10
RFHA1020
Device Handling/Environmental Conditions
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or
evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.
These capacitances exist across all three terminals of the device. The physical manufactured characteristics of
the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These
capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances
measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.
Any internal matching is included in the terminal capacitance measurements. The capacitance values presented
in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of
the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken
to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care
not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain
current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the
operational characteristics for this device, considering manufacturing variations and expected performance. The
user may choose alternate conditions for biasing this device based on performance tradeoffs.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of
the die. At the same time, the package temperature is measured using a thermocouple touching the backside of
the die embedded in the device heatsink but sized to prevent the measurement system from impacting the
results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or
below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the
thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.
10 of 10
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
DS120508
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