Excelics EPA120E/EPA120EV DATA SHEET High Efficiency Heterojunction Power FET • • • • • • • +29.5dBm TYPICAL OUTPUT POWER 9.5dB TYPICAL POWER GAIN FOR EPA120E AND 10.5dB FOR EPA120EV AT 18GHz 0.3 X 1200 MICRON RECESSED “MUSHROOM” GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL DOPING PROFILE PROVIDES HIGH POWER EFFICIENCY, LINEARITY AND RELIABILITY EPA120EV WITH VIA HOLE SOURCE GROUNDING Idss SORTED IN 30mA PER BIN RANGE Chip Thickness: 75 ± 20 microns All Dimensions In Microns : Via Hole No Via Hole For EPA120E O ELECTRICAL CHARACTERISTICS (Ta = 25 C) PARAMETERS/TEST CONDITIONS SYMBOLS P1dB G1dB EPA120E MIN TYP 28.0 29.5 MAX MIN TYP 28.0 29.5 Output Power at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz Gain at 1dB Compression f=12GHz Vds=8V, Ids=50% Idss f=18GHz 9.5 10.5 f=12GHz 45 46 29.5 10.0 UNIT EPA120EV MAX dBm 29.5 12.0 10.5 12.5 dB Gain at 1dB Compression PAE Vds=8V, Ids=50% Idss Idss Saturated Drain Current Vds=3V, Vgs=0V 210 360 Gm Transconductance Vds=3V, Vgs=0V 240 380 Vp Pinch-off Voltage Vds=3V, Ids=3.5mA 510 210 240 -1.0 -2.5 360 Drain Breakdown Voltage Igd=1.2mA -11 -15 -11 -15 BVgs Source Breakdown Voltage Igs=1.2mA -7 -14 -7 -14 Thermal Resistance (Au-Sn Eutectic Attach) 510 mA 380 -1.0 BVgd Rth % 35 mS -2.5 V V V o 25 C/W MAXIMUM RATINGS AT 25OC SYMBOLS PARAMETERS EPA120E ABSOLUTE1 EPA120EV CONTINUOUS2 ABSOLUTE1 CONTINUOUS2 Vds Drain-Source Voltage 12V 8V 12V 8V Vgs Gate-Source Voltage -8V -3V -8V -3V Ids Drain Current Idss 405mA Idss Idss Igsf Forward Gate Current 60mA 10mA 60mA 10mA Pin Input Power 27dBm Tch Channel Temperature 175oC @ 3dB Compression 150oC o 27dBm @ 3dB Compression 175oC o 150oC o Tstg Storage Temperature -65/175 C -65/150 C -65/175 C -65/150oC Pt Total Power Dissipation 3.9W 3.2W 5.4W 4.5W Note: 1. Exceeding any of the above ratings may result in permanent damage. 2. Exceeding any of the above ratings may reduce MTTF below design goals. Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054 Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com EPA120E/EPA120EV DATA SHEET High Efficiency Heterojunction Power FET EPA120E S-PARAMETERS EPA120E 8V, 1/2 Idss FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 --- S11 --MAG ANG 0.898 -97.8 0.885 -134.7 0.887 -159.7 0.898 -168.8 0.904 -174.2 0.912 -177.2 0.917 -179.9 0.922 177.5 0.927 173.8 0.934 169.1 0.936 164.2 EPA120EV FREQ (GHz) 1.0 2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 18.0 20.0 --- S11 --MAG ANG 0.926 -100.1 0.910 -135.7 0.907 -159.8 0.911 -173.3 0.919 -174.7 0.920 -177.4 0.927 172.0 0.937 167.1 0.945 161.8 0.953 164.4 0.951 162.0 --- S21 --MAG ANG 14.488 124.9 8.805 103.0 4.668 81.9 3.128 68.6 2.329 57.5 1.842 47.7 1.501 38.2 1.256 28.9 1.077 19.4 0.934 9.9 0.827 0.5 --- S12 --MAG ANG 0.034 39.3 0.041 22.6 0.042 10.9 0.040 8.5 0.039 6.7 0.037 5.6 0.035 6.4 0.033 6.5 0.033 5.8 0.034 6.0 0.035 4.2 --- S22 --FREQ --- S11 --MAG ANG (GHz) MAG ANG 0.300 -95.1 21.0 0.938 162.3 0.313 -125.6 22.0 0.938 161.2 0.338 -140.7 24.0 0.939 159.3 0.366 -145.2 26.0 0.946 158.7 0.411 -148.1 28.0 0.946 158.0 0.458 -152.2 30.0 0.948 156.9 0.511 -157.7 32.0 0.955 154.5 0.564 -163.1 34.0 0.959 151.2 0.616 -168.7 36.0 0.967 147.5 0.658 -173.5 38.0 0.993 143.3 0.692 -178.4 40.0 0.994 137.0 --- S21 --MAG ANG 0.751 -2.6 0.701 -6.4 0.622 -14.1 0.559 -21.2 0.513 -27.1 0.472 -33.6 0.430 -40.1 0.388 -46.3 0.348 -51.4 0.325 -58.0 0.312 -67.9 --- S12 --MAG ANG 0.036 7.9 0.036 6.4 0.039 10.6 0.041 12.6 0.046 16.3 0.050 11.6 0.049 10.4 0.048 11.3 0.050 9.7 0.055 0.1 0.058 -21.3 --- S22 --MAG ANG 0.725 179.6 0.743 177.5 0.769 173.4 0.783 168.3 0.791 164.0 0.799 158.5 0.813 152.9 0.836 147.6 0.875 141.4 0.891 134.7 0.876 130.0 --- S12 --MAG ANG 0.034 39.1 0.040 20.9 0.042 10.1 0.040 3.9 0.040 1.7 0.037 -2.0 0.034 -6.4 0.032 -7.6 0.030 -9.2 0.030 -9.5 0.030 -11.7 --- S22 --FREQ --- S11 --MAG ANG (GHz) MAG ANG 0.290 -87.9 21.0 0.952 160.1 0.283 -117.5 22.0 0.959 159.1 0.305 -132.6 24.0 0.965 156.0 0.355 -134.0 26.0 0.967 151.5 0.381 -143.2 28.0 0.964 147.7 0.425 -152.3 30.0 0.954 143.1 0.492 -153.2 32.0 0.955 139.5 0.550 -158.5 34.0 0.961 136.3 0.611 -160.7 36.0 0.974 135.2 0.653 -169.8 38.0 0.981 134.3 0.692 -173.6 40.0 0.979 134.0 --- S21 --MAG ANG 0.699 -7.0 0.647 -11.1 0.560 -18.7 0.483 -26.6 0.427 -34.3 0.374 -43.3 0.337 -52.2 0.299 -60.2 0.276 -64.6 0.261 -70.0 0.243 -75.5 --- S12 --MAG ANG 0.031 -12.0 0.031 -11.8 0.030 -9.4 0.032 -5.6 0.031 -5.0 0.032 -8.5 0.032 -15.8 0.027 -21.0 0.029 -19.6 0.034 -34.5 0.044 -55.2 --- S22 --MAG ANG 0.701 -175.6 0.718 -177.3 0.751 177.9 0.778 173.2 0.800 168.1 0.811 162.5 0.820 156.1 0.831 151.4 0.867 147.5 0.876 144.0 0.877 141.6 8V, 1/2 Idss --- S21 --MAG ANG 13.872 123.9 8.326 102.2 4.431 81.8 2.988 67.4 2.273 56.1 1.805 44.9 1.449 33.1 1.175 22.7 0.967 13.4 0.825 5.4 0.725 -2.5 Note: The data included 0.7 mils diameter Au bonding wires; 4gate wires, 15 mils each; 4 drain wires, 20 mils each; 10 source wires, 7 mils each; no source wires for EPA120EV.