B170/B - B1100/B 1.0A HIGH VOLTAGE SCHOTTKY BARRIER RECTIFIER Features · · · · · · · · Schottky Barrier Chip Guard Ring Die Construction for Transient Protection Ideally Suited for Automatic Assembly Low Power Loss, High Efficiency Surge Overload Rating to 30A Peak For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Application High Temperature Soldering: 260°C/10 Second at Terminal Plastic Material: UL Flammability Classification Rating 94V-0 B A · · · · · Max Min Max A 2.29 2.92 3.30 3.94 B 4.00 4.60 4.06 4.57 C 1.27 1.63 1.96 2.21 C J G E H Case: SMA / SMB, Molded Plastic Terminals: Solder Plated Terminal Solderable per MIL-STD-202, Method 208 Polarity: Cathode Band or Cathode Notch SMA Weight: 0.064 grams (approx.) SMB Weight: 0.093 grams (approx.) Mounting Position: Any Marking: Type Number SMB Min D Mechanical Data · · SMA Dim D 0.15 0.31 0.15 0.31 E 4.80 5.59 5.00 5.59 G 0.10 0.20 0.10 0.20 H 0.76 1.52 0.76 1.52 J 2.01 2.62 2.00 2.62 All Dimensions in mm No Suffix Designates SMA Package “B” Suffix Designates SMB Package Maximum Ratings and Electrical Characteristics @ TA = 25°C unless otherwise specified Single phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @ TT = 125°C Non-Repetitive Peak Forward Surge Current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) Symbol B170/B B180/B B190/B B1100/B Unit VRRM VRWM VR 70 80 90 100 V VR(RMS) 49 56 63 70 V IO 1.0 A IFSM 30 A Forward Voltage @ IF = 1.0A @ TA = 25°C @ TA = 100°C VFM 0.79 0.69 V Peak Reverse Current at Rated DC Blocking Voltage @ TA = 25°C @ TA = 100°C IRM 0.5 5.0 mA Cj 80 pF RqJT 25 K/W Tj, TSTG -65 to +150 °C Typical Junction Capacitance (Note 2) Typical Thermal Resistance Junction to Terminal (Note 1) Operating and Storage Temperature Range Notes: 1. Valid provided that terminals are kept at ambient temperature. 2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC. DS30018 Rev. B-2 1 of 2 B170/B - B1100/B IF, INSTANTANEOUS FORWARD CURRENT (A) I(AV), AVERAGE FORWARD CURRENT (A) 1.0 0.5 0 25 50 75 100 125 150 10 1.0 0.1 0 TT, TERMINAL TEMPERATURE (°C) Fig. 1 Forward Current Derating Curve 0.2 0.4 0.6 0.8 1.0 VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typical Forward Characteristics 1000 40 Single Half Sine-Wave (JEDEC Method) Cj, JUNCTION CAPACITANCE (pF) IFSM, PEAK FORWARD SURGE CURRENT (A) Tj - 25°C IF Pulse Width = 300µs 0.01 30 20 10 Tj = 25°C f = 1.0MHz 100 Tj = 150°C 0 10 1 10 100 1 10 100 VR, REVERSE VOLTAGE (V) Fig. 4 Typical Junction Capacitance NUMBER OF CYCLES AT 60 Hz Fig. 3 Max Non-Repetitive Peak Fwd Surge Current DS30018 Rev. B-2 0.1 2 of 2 B170/B - B1100/B