MBR3100 Preferred Device Axial Lead Rectifier . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlap contact. Ideally suited for use as rectifiers in low- voltage, high- frequency inverters, free wheeling diodes, and polarity protection diodes. • Low Reverse Current • Low Stored Charge, Majority Carrier Conduction • Low Power Loss/High Efficiency • Highly Stable Oxide Passivated Junction • Guard-Ring for Stress Protection • Low Forward Voltage • 150°C Operating Junction Temperature • High Surge Capacity http://onsemi.com SCHOTTKY BARRIER RECTIFIER 3.0 AMPERES 100 VOLTS Mechanical Characteristics: • Case: Epoxy, Molded • Weight: 1.1 gram (approximately) • Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable • Lead and Mounting Surface Temperature for Soldering Purposes: • • • • 220°C Max. for 10 Seconds, 1/16″ from case Shipped in plastic bags, 500 per bag Available Tape and Reeled, 1500 per reel, by adding a “RL’’ suffix to the part number Polarity: Cathode indicated by Polarity Band Marking: B3100 AXIAL LEAD CASE 267-05 (DO-201AD) STYLE 1 MARKING DIAGRAM MBR 3100 MAXIMUM RATINGS Rating Symbol Max Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage VRRM VRWM VR 100 V Average Rectified Forward Current TA = 100°C (RJA = 28°C/W, P.C. Board Mounting, see Note 2) IO 3.0 A Non-Repetitive Peak Surge Current (Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz) IFSM MBR3100 = Device Code ORDERING INFORMATION Device Operating and Storage Junction Temperature Range (Reverse Voltage Applied) Voltage Rate of Change (Rated VR) Semiconductor Components Industries, LLC, 2003 April, 2003 - Rev. 3 TJ, Tstg 150 Package Shipping MBR3100 Axial Lead 500 Units/Bag MBR3100RL Axial Lead 1500/Tape & Reel A °C -65 to +150 Preferred devices are recommended choices for future use and best overall value. dv/dt 10 V/ns 1 Publication Order Number: MBR3100/D MBR3100 THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient (see Note 2, Mounting Method 3) Symbol Max Unit RθJA 28 °C/W Symbol Max Unit ELECTRICAL CHARACTERISTICS (TL = 25°C unless otherwise noted) Characteristic Maximum Instantaneous Forward Voltage (Note 1) (iF = 3.0 Amps, TL = 25°C) (iF = 3.0 Amps, TL = 100°C) vF Maximum Instantaneous Reverse Current @ Rated dc Voltage (Note 1) TL = 25°C TL = 100°C iR V 0.79 0.69 mA 0.6 20 50 30 20 1 0.5 I , REVERSE CURRENT (mA) R i , INSTANTANEOUS FORWARD CURRENT (AMPS) F 1. Pulse Test: Pulse Width = 300 µs, Duty Cycle = 2.0%. TJ = 150°C 10 100°C 5 3 2 25°C 1 0.5 0.3 0.2 0.1 125°C 0.05 0.02 0.01 100°C 0.005 0.002 0.001 0.0005 0.1 0.05 TJ = 150°C 0.2 25°C 0.0002 0.0001 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 vF, INSTANTANEOUS VOLTAGE (VOLTS) 0 10 20 70 30 40 50 60 80 VR REVERSE VOLTAGE (VOLTS) 90 100 Figure 2. Typical Reverse Current* Figure 1. Typical Forward Voltage 8 P , AVERAGE POWER DISSIPATION (WATTS) F (AV) I F (AV) , AVERAGE FORWARD CURRENT (AMPS) *The curves shown are typical for the highest voltage device in the voltage grouping. Typical reverse current for lower voltage selections can be estimated from these curves if VR is sufficient below rated VR. 7 6 5 dc 4 SQUARE WAVE 3 2 1 0 20 40 60 80 100 120 140 160 180 4 3.5 3 2.5 SQUARE WAVE 2 1.5 1 0.5 0 TA, AMBIENT TEMPERATURE (°C) Figure 3. Current Derating (Mounting Method #3 per Note 2) 1.0 2.0 3.0 4.0 IF (AV), AVERAGE FORWARD CURRENT (AMPS) Figure 4. Power Dissipation http://onsemi.com 2 dc 5.0 MBR3100 400 C, CAPACITANCE (pF) 300 200 TJ = 25°C f = 1 MHz 100 80 50 40 0 20 40 60 80 VR, REVERSE VOLTAGE (VOLTS) Figure 5. Typical Capacitance NOTE 2 — MOUNTING DATA Data shown for thermal resistance junction-to-ambient (RθJA) for the mountings shown is to be used as typical guideline values for preliminary engineering, or in case the tie point temperature cannot be measured. TYPICAL VALUES FOR RθJA IN STILL AIR Mounting Method Lead Length, L (in) 1/8 1/4 1/2 3/4 RθJA 1 50 51 53 55 °C/W 2 58 59 61 63 °C/W 3 °C/W 28 Mounting Method 1 Mounting Method 2 P.C. Board where available copper surface is small. Vector Push-In Terminals T-28 L ÉÉÉÉÉÉÉÉÉÉÉÉÉ L L ÉÉÉÉÉÉÉÉÉÉÉ Mounting Method 3 ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ P.C. Board with 2-1/2 ″ X 2-1/2″ copper surface. L = 1/2’’ Board Ground Plane http://onsemi.com 3 L MBR3100 PACKAGE DIMENSIONS AXIAL LEAD CASE 267-05 (DO-201AD) ISSUE G K D A 1 2 B K NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B D K INCHES MIN MAX 0.287 0.374 0.189 0.209 0.047 0.051 1.000 −−− MILLIMETERS MIN MAX 7.30 9.50 4.80 5.30 1.20 1.30 25.40 −−− STYLE 1: PIN 1. CATHODE (POLARITY BAND) 2. ANODE ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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