DLD101 LINEAR MODE CURRENT SINK LED DRIVER Features Mechanical Data • • • NEW PRODUCT • • • • • • • • • • Primarily Designed for Driving LED/s for Illumination, Signage and Backlighting Applications Ideally Suited for Linear Mode Constant Current Applications VBE Referenced Current Sink Circuit Includes: • N-Channel Enhancement Mode MOSFET (Q1) • Base Accessible Pre-Biased Transistor (Q2) High Voltage Capable (50V) Small Form Factor Surface Mount Package High Dissipation Capability Low Thermal Resistance Lead Free By Design/RoHS Compliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Case: DFN3030D-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish — NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Marking Information: See Page 6 Ordering Information: See Page 6 Weight: 0.0172 grams (approximate) • • • • • VCC Supply LED String RC 4 S2 B1 B1’ 7 8 G 5 R2 Q1 1 2 D C 6 R1 3 E1 S2 B1 B1’ E1 8 7 6 5 VDS B Q2 R2 Q1 E Q2 5 R1 6 Option 3: S 7 8 ILED ≈ Option 3 VBE RS Options 1 & 2: Option 2 Option 1 1 2 3 4 1 2 3 4 D2 G2 NC C1 D2 G2 NC C1 Top View Package Pin-Out Configuration Top View Internal Schematic Maximum Ratings: (Q1) 1.1 VBE RS Option 2: Capacitor is across R2 for better noise performance. Typical Application Circuit for Linear Mode Current Sink LED Driver @TA = 25°C unless otherwise specified Characteristic Drain Source Voltage Gate-Source Voltage Drain Current (Note 3) Drain Current (Note 3) Body-Diode Continuous Current (Note 3) Maximum Ratings: (Q2) RS ILED ≈ Symbol VDSS VGSS TA = 25°C TA = 70°C Pulsed ID IDM IS Value 100 ±20 1.0 0.8 3.0 1.0 Unit V V Value 50 -5 to +30 100 Unit V V mA Value 0.7 178 30 -55 to +150 Unit W °C/W °C/W °C A A A @TA = 25°C unless otherwise specified Characteristic Symbol VCC VIN IO Supply Voltage Input Voltage Output Current (DC) Thermal Characteristics – Total Device Characteristic Power Dissipation (Note 3) @TA = 25°C Thermal Resistance Junction to Ambient Air (Note 3) @TA = 25°C Thermal Resistance Junction to Case Air (Note 3) @TA = 25°C Operating and Storage Temperature Range Notes: Symbol PD RθJA RθJC TJ, TSTG 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. 3. Part mounted on FR-4 substrate PC board, with minimum recommended pad layout (see page 6). DLD101 Document number: DS32007 Rev. 6 - 2 1 of 7 www.diodes.com February 2010 © Diodes Incorporated DLD101 NEW PRODUCT Electrical Characteristics: (Q1) @TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 4) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 100 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(th) 2.0 RDS (ON) ⎯ 4.1 0.85 0.99 V Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time gfs VSD ⎯ ⎯ ⎯ ⎯ ⎯ 0.9 0.89 ⎯ 1.1 S V VDS = VGS, ID = 250μA VGS = 10V, ID = 1.5A VGS = 6V, ID = 1A VDS = 15V, ID = 1A VGS = 0V, IS = 1.5A Ciss Coss Crss ⎯ ⎯ ⎯ 129 14 8 ⎯ ⎯ ⎯ pF pF pF VDS = 50V, VGS = 0V f = 1.0MHz Qg Qgs Qgd td(on) tr td(off) tf ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ 3.4 0.9 1 7.9 11.4 14.3 9.6 ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ ⎯ nC VDS = 50V, VGS = 10V, ID = 1A ns VGS = 50V, VDS = 10V, ID = 1A, RG ≈ 6Ω Electrical Characteristics: (Q2) Characteristic Input Voltage Output Voltage Output Current DC Current Gain Input Resistance Resistance Ratio Transition Frequency Notes: Ω Test Condition @TA = 25°C unless otherwise specified Symbol VI(off) VI(on) VO(on) IO(off) G1 R1 R2/R1 Min 0.4 80 3.2 8 Typ 0.05 4.7 10 Max 1.5 0.3 0.5 6.2 12 Unit V V V μA kΩ - fT - 260 - MHz Test Condition VCC = 5V, IO = 100μA VCC = 0.3V, IO = 5mA IO/II = 5mA/0.25mA VCC = 50V, VI = 0V VO = 5V, IO = 10mA VCE = 10V, IE = 5mA, f = 100MHz 4. Short duration pulse test used to minimize self-heating effect. DLD101 Document number: DS32007 Rev. 6 - 2 2 of 7 www.diodes.com February 2010 © Diodes Incorporated DLD101 Q1 Typical Performance Curves RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10 VDS = VGS 9 ID, DRAIN CURRENT (A) 7 6 TA = 150°C 5 TA = 125°C 4 3 TA = 85°C 2 T A = 25°C 1 T A = -55°C 2 2.5 3 3.5 4 VGS, GATE-SOURCE VOLTAGE (V) Fig. 1 Typical Transfer Characteristic 1 VGS = 6V VGS = 10V 0.1 0 4.5 0.4 0.8 1.2 ID, DRAIN CURRENT (A) Fig. 2 Typical On-Resistance vs. Drain Current and Gate Voltage 1.6 3.0 1.6 VGS = 10V 1.4 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0 1.5 1.2 TA = 150°C 1.0 T A = 125°C 0.8 T A = 85°C 0.6 TA = 25°C 0.4 T A = -55°C 0.2 2.5 2.0 0.4 0.8 1.2 ID, DRAIN CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Temperature VGS = 10V ID = 1.5A 1.5 VGS = 6V ID = 1A 1.0 0.5 0 0 0 -50 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 4 On-Resistance Variation with Temperature 1.6 1.5 -25 VGS(TH), GATE THRESHOLD VOLTAGE (V) 4.0 1.2 RDSON, DRAIN-SOURCE ON-RESISTANCE (Ω) NEW PRODUCT 8 10 0.9 VGS = 6V ID = 1A 0.6 VGS = 10V ID = 1.5A 0.3 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DLD101 Document number: DS32007 Rev. 6 - 2 3 of 7 www.diodes.com 3.8 3.6 3.4 3.2 ID = 1mA 3.0 2.8 ID = 250µA 2.6 2.4 2.2 2.0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 Gate Threshold Variation vs. Ambient Temperature February 2010 © Diodes Incorporated DLD101 Q1 Typical Performance Curves - continued 1,000 1.6 IDSS, LEAKAGE CURRENT (nA) IS, SOURCE CURRENT (A) 1.2 1.0 TA = 25°C 0.8 0.6 0.4 TA = 150°C 100 TA = 125°C 10 TA = 85°C TA = -55°C 0.2 TA = 25°C 1 0 0.6 0 0.7 0.8 0.9 1 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 7 Source-Drain Diode Forward Voltage vs. Current 10 20 30 40 50 VDS, DRAIN-SOURCE VOLTAGE (V) 60 Fig. 8 Typical Leakage Current vs. Drain-Source Voltage Q2 Typical Performance Curves 1,000 25 IB = 5mA 20 hFE, DC CURRENT GAIN IC, COLLECTOR CURRENT (mA) NEW PRODUCT 1.4 IB = 4mA 15 IB = 3mA 10 T A = 150°C 100 T A = 125°C TA = 85°C TA = 25°C TA = -55°C 10 IB = 2mA 5 IB = 1mA 0 0 1 1 2 3 4 5 VCE, COLLECTOR-EMITTER VOLTAGE (V) Fig. 9 Typical Collector Current vs. Collector-Emitter Voltage DLD101 Document number: DS32007 Rev. 6 - 2 4 of 7 www.diodes.com 50 1 10 IC, COLLECTOR CURRENT (mA) Fig. 10 Typical DC Current Gain vs. Collector Current 0.1 February 2010 © Diodes Incorporated DLD101 Q2 Typical Performance Curves - continued NEW PRODUCT VCE(SAT), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 0.7 IC/IB = 10 0.6 0.5 0.4 0.3 0.2 TA = 125°C T A = 150°C 0.1 TA = 85°C TA = -55°C 0 T A = 25°C 1 10 100 200 IC, COLLECTOR CURRENT (mA) Fig. 11 Typical Collector-Emitter Saturation Voltage vs. Collector Current Typical Application Circuit VCC Supply The DLD101 has been designed primarily for solid state lighting applications, to be used as a current sink circuit solution for LEDs. It features a N-channel MOSFET capable of 1A drive current and a prebiased NPN transistor (which allows direct connection to the base, or via a series base resistor). LED String RC 4 3 1 2 G Figure 12 shows a typical application circuit diagram for driving an LED or string of LEDs. Note that the pre-biased transistor (Q2) has the option of bypassing the series base resistor by connecting directly to pin 7. The N-MOSFET (Q1) is configured as a VBE referenced current sink and is biased on by RC. The current passed through the LED string, MOSFET and source resistor, develops a voltage across RS that provides a bias to the NPN transistor. Consideration of the expected linear mode power dissipation must be factored into the design, with respect to the DLD101's thermal resistance. D C VDS B Q2 R2 Q1 E 5 R1 6 Option 3: S 7 8 ILED ≈ Option 3 VBE RS VDS = VCC – VF LED String – VRS PQ1 = VDS * ILED String Options 1 & 2: Option 2 Option 1 RS ILED ≈ 1.1 VBE RS Option 2: Capacitor is across R2 for better noise performance. PWM dimming functionality can be effected by either driving the NPN base via an additional resistor (thereby overriding the feedback from RS) or by pulling the gate of the MOSFET down by direct connection. The PWM control pulse stream can be provided by a micro-controller or simple 555 based circuitry. Fig. 12 Typical Application Circuit for Linear Mode Current Sink LED Driver DLD101 Document number: DS32007 Rev. 6 - 2 5 of 7 www.diodes.com February 2010 © Diodes Incorporated DLD101 Ordering Information (Note 5) Part Number DLD101-7 Packaging 3000/Tape & Reel 5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. Marking Information DFN3030D-8 YYWW NEW PRODUCT Notes: Case DFN3030D-8 L101 = Product marking code YYWW = Date code marking YY = Last digit of year (ex: 09 for 2009) WW = Week code 01 to 52 L101 Package Outline Dimensions A A3 SEATING PLANE A1 Dim A A1 A3 b D D1 D2 D3 D D3 b E3 D1 E E1 D2 E2 Min 0.570 0 0.290 2.950 2.175 0.980 0.105 DFN3030D-8 Max Typ Dim Min 0.630 0.600 e 0.050 0.020 E 2.950 0.150 E1 1.800 0.390 0.340 E2 0.290 3.075 3.000 E3 0.175 2.375 2.275 L 0.300 1.180 1.080 Z 0.305 0.205 All Dimensions in mm Max 3.075 2.000 0.490 0.375 0.40 - Typ 0.650 3.000 1.900 0.390 0.275 0.350 0.355 L Z e BOTTOM VIEW Suggested Pad Layout C X G6 C G G1 G2 G3 G4 G5 G6 X X1 G Y5 Y2 X4 G3 G2 G1 Y Dimensions X3 Y3 Y1 G4 Y4 G5 X5 X1 DLD101 Document number: DS32007 Rev. 6 - 2 X2 Value Value Dimensions (in mm) (in mm) 0.650 X2 0.220 0.150 X3 0.375 0.950 X4 1.080 0.270 X5 0.150 0.135 Y 2.600 1.350 Y1 1.900 0.925 Y2 0.150 1.350 Y3 0.390 0.440 Y4 0.815 0.210 Y5 0.550 X3 6 of 7 www.diodes.com February 2010 © Diodes Incorporated DLD101 IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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