ATMEL ATA2526S3xxC-DDW Low-voltage ir receiver assp Datasheet

Features
• No External Components Except PIN Diode
• Supply-voltage Range: 2.7V to 5.5V
• High Sensitivity Due to Automatic Sensitivity Adaption (AGC) and Automatic Strong
Signal Adaption (ATC)
Automatic Supply Voltage Adaptation
High Immunity against Disturbances from Daylight and Lamps
Small Size and Innovative Pad Layout
Available for Carrier Frequencies between 33 kHz to 40 kHz and 56 kHz; Adjusted by
Zener Diode Fusing ±2.5%
• TTL and CMOS Compatible
•
•
•
•
Applications
• Home Entertainment Applications
• Home Appliances
• Remote Control Equipment
Low-voltage
IR Receiver
ASSP
ATA2526
1. Description
The IC ATA2526 is a complete IR receiver for data communication that has been
developed and optimized for use in carrier-frequency-modulated transmission applications. The IC combines small size with high sensitivity suppression of noise as caused
by daylight and lamps. An innovative and patented pad layout offers unique flexibility
for IR receiver module assembly. The ATA2526 is available with standard frequencies
(33, 36, 37, 38, 40, 56 kHz) and 3 different noise suppression regulation types (standard, lamp, short burst), thus covering the requirements of different high-volume
remote control solutions (please refer to selection guide available for
ATA2525/ATA2526). The ATA2526 operates in a supply voltage range of 2.7V to
5.5V.
The function of the ATA2526 can be described using the block diagram of Figure 1-1
on page 2. The input stage has two main functions. First it provides a suitable bias
voltage for the PIN diode. Secondly the pulsed photo-current signals are transformed
into a voltage by a special circuit which is optimized for low noise applications. After
amplification by a Controlled Gain Amplifier (CGA) the signals have to pass a tuned
integrated narrow bandpass filter with a center frequency f0 which is equivalent to the
chosen carrier frequency of the input signal. The demodulator is used first to convert
the input burst signal to a digital envelope output pulse and to evaluate the signal
information quality, i.e., unwanted pulses will be suppressed at the output pin. This is
done by means of an integrated dynamic feedback circuit which varies the gain as a
function of the present environmental conditions (ambient light, modulated lamps
etc.). Other features can be used to adapt the device to the individual application to
ensure best transmission quality.
4905E–AUTO–09/09
Figure 1-1.
Block Diagram
VS
IN
Input
Oscillator
CGA and
filter
OUT
Demodulator
Microcontroller
AGC/ATC and digital
control
Carrier frequency f0
ATA2526
Modulated IR signal
min 6 or 10 pulses
2
GND
ATA2526
4905E–AUTO–09/09
ATA2526
2. Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress rating
only and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
Parameter
Symbol
Value
Unit
Supply voltage
VS
–0.3 to +6
V
Supply current
IS
3
mA
VIN
–0.3 to VS
V
Input voltage
Input DC current at VS = 5V
IIN
0.75
mA
Output voltage
VO
–0.3 to VS
V
Output current
IO
10
mA
Operating temperature
Tamb
–25 to +85
°C
Storage temperature
Tstg
–40 to +125
°C
Power dissipation at Tamb = 25°C
Ptot
30
mW
Symbol
Value
Unit
RthJA
110
K/W
3. Thermal Resistance
Parameters
Junction ambient TSSOP8
4. Electrical Characteristics, 3-V Operation
Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified.
No.
1
Parameters
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
VS
2.7
3.0
3.3
V
C
1
IS
0.7
0.9
1.3
mA
B
kΩ
A
250
mV
B
VS
V
B
mA
B
µA
C
µA
B
Supply
1.1
Supply-voltage range
1.2
Supply current
2
Test Conditions
IIN =0
Output
2.1
Internal pull-up resistor
Tamb = 25°C
See Figure 6-10 on page 10
1, 3
RPU
2.2
Output voltage low
R2 = 1.4 kΩ
See Figure 6-10 on page 10
3, 6
VOL
2.3
Output voltage high
3, 1
VOH
2.4
Output current clamping
R2 = 0
See Figure 6-10 on page 10
3, 6
IOCL
VIN = 0
See Figure 6-10 on page 10
5
IIN_DCMAX
5
IIN_DCMAX
3
40
VS – 0.25
8
Input
3.1
Input DC current
3.2
Input DC current
VIN = 0; VS = 3V
See Figure 6-3 on page 7 Tamb = 25°C
–150
–350
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
3
4905E–AUTO–09/09
4. Electrical Characteristics, 3-V Operation (Continued)
Tamb = –25°C to +85°C, VS = 2.7V to 3.3V unless otherwise specified.
No.
3.3
3.4
3.5
4
Parameters
Test Conditions
Minimum detection
Test signal:
threshold current
See Figure 6-9 on page 10
See Figure 6-1 on page 7 VS = 3V
Tamb= 25°C, IIN_DC=1 µA
Minimum detection
square pp
threshold current with AC burst N = 16
current disturbance
f = f0; tPER = 10 ms
IIN_AC100 =
Figure 6-8 on page 9
3 µA at 100 Hz
BER = 50(1)
Maximum detection
threshold current with
VIN > 0V
Test signal:
See Figure 6-9 on page 10
VS = 3V, Tamb = 25°C
IIN_DC = 1 µA
square pp
burst N = 16
f = f0; tPER = 10 ms
Figure 6-8 on page 9
BER = 5%(1)
Pin
Symbol
3
IEemin
3
IEemin
3
IEemax
Min.
Typ.
Max.
Unit
Type*
–800
pA
B
–1600
pA
C
µA
D
–200
Controlled Amplifier and Filter
4.1
Maximum value of
variable gain (CGA)
VS = 3V, Tamb = 25°C
GVARMAX
50
dB
D
4.2
Minimum value of variable
VS = 3V, Tamb = 25°C
gain (CGA)
GVARMIN
–6
dB
D
4.3
Total internal
amplification(2)
VS = 3V, Tamb = 25°C
GMAX
72
dB
D
4.4
Center frequency fusing
accuracy of bandpass
VS = 3V, Tamb = 25°C
f03V_FUSE
–2.5
f0
+2.5
%
A
4.5
Overall accuracy center
frequency of bandpass
f03V
–5.5
f0
+3.5
%
C
4.6
Overall accuracy center
frequency of bandpass
Tamb = 0 to 70°C
f03V
–4.5
f0
+3.0
%
C
4.7
BPF bandwidth
–3 dB; f0 = 38 kHz;
See Figure 6-7 on page 9
kHz
C
B
3.8
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
4
ATA2526
4905E–AUTO–09/09
ATA2526
5. Electrical Characteristics, 5-V Operation
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No.
5
Parameters
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
1
VS
4.5
5.0
1
IS
0.9
1.2
5.5
V
C
1.6
mA
B
kΩ
A
250
mV
B
VS
V
B
mA
B
µA
C
Supply
5.1
Supply-voltage range
5.2
Supply current
6
Test Conditions
IIN =0
Output
6.1
Internal pull-up resistor
Tamb = 25°C
See Figure 6-10 on page
10
1, 3
RPU
6.2
Output voltage low
R2 = 2.4 kΩ
See Figure 6-10 on page
10
3, 6
VOL
6.3
Output voltage high
3, 1
VOH
6.4
Output current clamping
R2 = 0
See Figure 6-10 on page
10
3, 6
IOCL
VIN = 0
See Figure 6-10 on page
10
5
IIN_DCMAX
5
IIN_DCMAX
–700
µA
B
3
IEemin
–1000
pA
B
3
IEemin
–2500
pA
C
3
IEemax
µA
D
7
Input DC current
7.2
Input DC current
VIN = 0; VS = 5V
See Figure 6-4 on page 8 Tamb = 25°C
7.4
7.5
VS – 0.25
8
Input
7.1
7.3
40
Minimum detection
Test signal:
threshold current
See Figure 6-9 on page
See Figure 6-2 on page 7 10
VS = 5V
Tamb = 25°C
Minimum detection
IIN_DC = 1 µA
threshold current with AC square pp
current disturbance
burst N = 16
IIN_AC100 = 3 µA at
f = f0; tPER = 10 ms
100 Hz
Figure 6-8 on page 9
BER = 50(1)
Maximum detection
threshold current with
VIN > 0V
Test signal:
See Figure 6-9 on page
10
VS = 5V, Tamb = 25°C
IIN_DC = 1 µA
square pp
burst N = 16
f = f0; tPER = 10 ms
Figure 6-8 on page 9
BER = 5%(1)
–400
–500
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
5
4905E–AUTO–09/09
5. Electrical Characteristics, 5-V Operation (Continued)
Tamb = –25°C to +85°C, VS = 4.5V to 5.5V unless otherwise specified.
No.
8
Parameters
Test Conditions
Pin
Symbol
Min.
Typ.
Max.
Unit
Type*
Controlled Amplifier and Filter
8.1
Maximum value of
variable gain (CGA)
VS = 5V, Tamb = 25°C
GVARMAX
50
dB
D
8.2
Minimum value of variable
VS = 5V, Tamb = 25°C
gain (CGA)
GVARMIN
–6
dB
D
8.3
Total internal
amplification(2)
VS = 5V, Tamb = 25°C
GMAX
72
dB
D
8.4
Resulting center
frequency fusing
accuracy
f0 fused at VS = 3V
VS = 5V, Tamb = 25°C
f05V
f03V-FUSE
+ 0.5
%
C
*) Type means: A =100% tested, B = 100% correlation tested, C = Characterized on samples, D = Design parameter
Notes:
1. BER = bit error rate; e.g., BER = 5% means that with P = 20 at the input pin 19...21 pulses can appear at the pin OUT
2. After transformation of input current into voltage
5.1
Reliability
Electrical qualification (1000h at 150°C) in molded SO8 plastic package
6
ATA2526
4905E–AUTO–09/09
ATA2526
6. Typical Electrical Curves at Tamb = 25°C
Figure 6-1.
IEemin versus IIN_DC, VS = 3V
100
IEemin (nA)
VS = 3V
f = f0
10
1
0
0
1
10
100
1000
100
1000
IIN_DC (µA)
Figure 6-2.
IEemin versus IIN_DC, VS = 5V
100
IEemin (nA)
VS = 5V
f = f0
10
1
0
0
1
10
IIN_DC (µA)
Figure 6-3.
VIN versus IIN_DC, VS = 3V
3.5
VS = 3V
f = f0
3.0
VIN (V)
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
100
1000
IIN_DC (µA)
7
4905E–AUTO–09/09
Figure 6-4.
VIN versus IIN_DC, VS = 5V
3.5
VS = 5V
f = f0
3.0
VIN (V)
2.5
2.0
1.5
1.0
0.5
0
0
0.1
1
10
100
1000
IIN_DC (µA)
Figure 6-5.
Data Transmission Rate, VS = 3V
4000
3500
3060
3000
Short burst
type
Bits/s
2500
2077
2000
2000
Standard
type
1357
1500
1333
1000
905
Lamp type
500
0
30
35
40
45
50
55
60
f0 (kHz)
Figure 6-6.
Data Transmission Rate, VS = 5V
4000
3415
3500
Short burst
type
3000
2317
Bits/s
2500
2179
Standard
type
2000
1479
1500
1404
1000
952
Lamp type
500
0
30
35
40
45
50
55
60
f0 (kHz)
8
ATA2526
4905E–AUTO–09/09
ATA2526
Figure 6-7.
Typical Bandpass Curve
1.1
VS = 3V
Relative Amplitude
1.0
0.9
0.8
Bandwidth (-3 dB)
0.7
0.6
0.5
0.4
0.92
0.94
0.96
0.98
1.00
1.02
1.04
1.06
1.08
f/f0
Q = f/f0/B; B → –3 dB values
Example: Q = 1/(1.047 – 0.954) = 11
Figure 6-8.
Illustration of Used Terms, Example: f = 33 kHz, burst with 16 pulses, 16 periods
Period (P = 16)
t PER = 970 µs
Burst (N = 16 pulses)
t B = 485 µs
t GAP > t DON + t DOFF
IN
1
7
16
7
7
33 µs (f0 = 33 kHz)
OUT
t DON
tDOFF
485 µs
Envelope 16
Envelope 1
15520 µs
OUT
Telegram pause
Data word
Data word
t
16 ms
TREF = 62 ms
9
4905E–AUTO–09/09
Figure 6-9.
Test Circuit
I Ee = ΔU1/400 kΩ
ΔU1
VDD = 3V to 5V
400 kΩ
1 nF
IIN_DC
R1 = 220Ω
VS
IIN
IEe
20 kΩ
ATA2526
1 nF
VPULSE
IIN_AC100
IN
OUT
GND
ΔU2
C1
I IN_DC = ΔU2/40 kΩ
20 kΩ
f0
+
4.7 µF
16
DC
+
tPER = 10 ms
Figure 6-10. Application Circuit
VDD = 3V to 5V
R2(1) > 2.4 kΩ
R1 = 220Ω
RPU
IS
VS
IOCL
IN
ATA2526
IIN
Microcontroller
OUT
GND
+
IIN_DC
IEe
C1
4.7 µF
VIN
VO
C2(2) = 470 pF
(10 nF)
(1)
Optional
(2)
The value of C2 is dimensioned for the short burst type ATA2526P7xx. For the other types C2 can be omitted.
In case of an optional resistor R2 > 2.4 kΩ the value of C 2 must be increased to C2 = 10 nF. For the other types
C2 = 470 pF is sufficient.
10
ATA2526
4905E–AUTO–09/09
ATA2526
7. Chip Dimensions
Figure 7-1.
Chip Size in µm
1080,960
GND
393,839
IN
666,828
scribe
length
OUT
225,496
ATA2526
48,73
VS
Versioning
Zapping
0,0
width
Note:
Pad coordinates are given for lower left corner of the pad in µm from the origin 0,0
Dimensions
Pad metallurgy
Finish
Note:
Length inclusive scribe
1.04 mm
Width inclusive scribe
1.20 mm
Thickness
290 µ ± 5%
Pads
80 µ × 80 µ
Fusing pads
60 µ × 60 µ
Material
AlCu/AlSiTi(1)
Thickness
0.8 µm
Material
Si3N4/SiO2
Thickness
0.7/0.3 µm
1. Value depends on manufacture location.
11
4905E–AUTO–09/09
8. Ordering Information
Delivery: unsawn wafers (DDW) in box
D(2)
Extended Type Number
Type
ATA2526S1xx C-DDW
2175
Standard type: ≥ 10 pulses, high data rate
ATA2526S3xx(1)C-DDW
1400
Lamp type: ≥ 10 pulses, enhanced suppression of disturbances, secure data
transmission
ATA2526S7xx(1)C-DDW
3415
Short burst type: ≥ 6 pulses, highest data rate
(1)
Notes:
1. xx means carrier frequency value (33, 36, 37, 38 or 40 kHz and 56 kHz)
2. Maximum data transmission rate up to bits/s with f0 = 56 kHz, VS = 5V (see Figure 6-6 on page 8)
8.1
Pad Layout
Figure 8-1.
Pad Layout
GND
IN
OUT
ATA2526
Pad layout
VS
Table 8-1.
SYMBOL
12
Zapping
Versioning
Pin Description
FUNCTION
OUT
Data output
VS
Supply voltage
GND
GND
IN
Input pin diode
Zapping
f0 adjust
Versioning
Type adjust
ATA2526
4905E–AUTO–09/09
ATA2526
9. Revision History
Please note that the following page numbers referred to in this section refer to the specific revision
mentioned, not to this document.
Revision No.
History
4905E-AUTO-09/09
• Put datasheet in newest template
• Section 8 “Ordering Information” on page 12 changed
•
•
•
•
•
4905D-AUTO-10/06
•
•
•
•
•
Features on page 1 changed
Applications on page 1 changed
Section 1 “Description” on page 1 changed
Section 2 “Pin Configuration” on page 2 changed
Number 2.2, 3.3 and 3.4 of Section 5 “Electrical Characteristics, 3-V
Operation” on pages 3 to 4 changed
Number 73, 7.4 and 8.4 of Section 5 “Electrical Characteristics, 3-V
Operation” on page 5 to 6 changed
Section 6.1 “ESD” on page 6 deleted
Figure 7-10 “Application Circuit” on page 10 changed
Section 9 “Ordering Information” on page 12 changed
Rename Figure 9-1 on page 12
4905C-AUTO-04/06
• Section 9 “Ordering Information” on page 12 changed
4905B-AUTO-04/06
• Put datasheet in a new template
• Section 8 “Chip Dimensions” on page 11 changed
13
4905E–AUTO–09/09
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4905E–AUTO–09/09