Eudyna GaN-HEMT 180W Preliminary EGN21A180IV High Voltage - High Power GaN-HEMT FEATURES ・High Voltage Operation : VDS=50V ・High Gain: 15dB(typ.) at Pout=45dBm(Avg.) ・High Efficiency: 32%(typ.) at Pout=45dBm(Avg.) ・Broad Frequency Range : 2100 to 2200MHz ・Proven Reliability DESCRIPTION The EGN21A180IV is a 180 Watt GaN-HEMT that offers high efficiency, high gain, ease of matching, greater consistency and broad bandwidth for high power L-band amplifiers with 50V operation. This device is targeted for high voltage, low current operation in digitally modulated base station applications - ideally suited for W-CDMA base station amplifiers and other HPA designs while offering ease of use. ABSOLUTE MAXIMUM RATINGS Item Symbol Drain-Source Voltage Gate-Source Voltage Total Power Dissipation Storage Temperature Channel Temperature VDS VGS Pt Tstg Tch Condition a in Rating Tc=25oC m i l e y r 120 -5 321 -65 to +175 250 Unit V V W oC oC RECOMMENDED OPERATING CONDITION(Case Temperature Tc= 25oC) Item r P DC Input Voltage Forward Gate Current Reverse Gate Current Channel Temperature Symbol Condition VDS IGF IGR Tch RG=2 Ω RG=2 Ω Limit 50 <38.8 >-14.4 200 Unit V mA mA oC ELECTRICAL CHARACTERISTICS (Case Temperature Tc=25oC) Item Symbol Condition Min. Pinch-Off Voltage Gate-Drain Breakdown Voltage Vp VDS=50V IDS=72mA VGDO Limit Typ. Max. Unit -1.0 -2.0 -3.5 V IGS=- 36 mA - -350 - V - -32 - dBc 14.0 15.0 - dB - 32 - % 0.55 0.7 3rd Order Inter modulation Distortion IM3 VDS=50V Power Gain Gp IDS(DC)=1.0A Drain Efficiency ηd Pout=45dBm(Avg.) Note 1 Thermal Resistance Channel to Case Rth - Note 1 : IM3 and Gain test condition as follows: IM3 & Gain : fo=2.135GHz, f1=2.145GHz W-CDMA(3GPP3.4 12-00) BS-1 64ch 67% clipping modulation(Peak/Avg. = [email protected]% Probability(CCDF)) measured over 3.84MHz at fo-10MHz and fI+10MHz. Edition 1.0 June 2005 1 oC/W EGN21A180IV High Voltage - High Power GaN-HEMT Output Power and Drain Efficiency vs. Input Power VDS=50V, IDS=1.0A, f=2.14GHz 54 90 54 52 50 Output Power [dBm] Output Power [dBm] 52 48 46 44 42 40 2.04 2.06 2.08 2.1 2.12 2.14 2.16 2.18 2.2 2.22 2.24 Frequency [GHz] Pin=26dBm Pin=32dBm Pin=38dBm m i l e Pin=28dBm Pin=34dBm Pin=40dBm r P Pin=30dBm Pin=36dBm IM3 [dBc] -30 -35 -40 70 48 60 46 50 44 40 42 40 a in 36 y r Drain Effi. 30 20 10 0 20 22 24 26 28 30 32 34 36 38 40 42 Input Power [dBm] 2-tone IMD vs. Tone Spacing, VDS=50V, IDS=1.0A Pout=45dBm(average) Center Frequency=2.14GHz -20 IM3 lower IM5 lower IM7 lower -25 IM3 upper IM5 upper IM7 upper -30 IMD [dBc] -25 0.5A 1.0A 1.5A 2.0A 50 38 2-tone IMD vs. Output Power VDS=50V, f1=2.135GHz, f2=2.145GHz, 10MHz Spacing -20 80 Output Power -35 -40 -45 -45 -50 -50 -55 -55 0.1 26 28 30 32 34 36 38 40 42 44 46 48 1.0 2-tone Spacing [MHz] Output Power(average) [dBm] 2 Drain Efficiency [%] Output Power vs. Frequency VDS=50V, IDS=1.0A 10 EGN21A180IV High Voltage - High Power GaN-HEMT 2-Carrier IMD, Drain Efficiency and Power Gain vs. Output Power VDS=50V, IDS=1.0A, f1=2.135GHz, f2=2.145GHz(10MHz Spacing) Peak/Avg. = [email protected]% Probability(CCDF) 45 Drain Effi. -20 40 -25 35 30 Power Gain -35 25 -40 -45 -50 -60 28 ACLR(5MHz offset) [dBc] 30 m i l e 32 r P 34 36 38 -25 ACLR DPD-OFF -30 45 40 35 Power Gain 30 -35 25 -40 20 -45 15 ACLR DPD-ON -50 10 -55 5 -60 0 32 34 36 38 40 42 44 Output Power [dBm] a in 15 10 5 IM7 42 44 46 0 48 Output Power [dBm] Drain Effi. -20 40 46 Drain Efficiency [%], Power Gain [dB] -55 -15 y r 20 2-Carrier ACLR, Drain Efficiency and Power Gain vs. Output Power with DPD Operation (note VDS=50V, IDS=1.0A f1=2.1375GHz, f2=2.1425GHz(5MHz Spacing) Peak/Avg. = [email protected]% Probability(CCDF); Single Carrier Signal Note) Digital Predistortion evaluation test system: PMC-Sierra PALADIN-15 DPD chip-set 2-carrier Spectrum with DPD Operation Pave=45dBm 10dB/div IMD [dBc] IM5 IM3 -30 Drain Efficiency [%], Power Gain [dB] -15 DPD-OFF DPD-ON 48 Center Frequency=2.14GHz 5MHz/div 3 EGN21A180IV High Voltage - High Power GaN-HEMT S-Parameters @VDS=50V, IDS=1.0A, f=1 to 3 GHz, Zl = Zs = 50 ohm +50j +100j +25j 2.0GHz +10j 2.2 2.0GHz 2.1 2.1 0 2.2 50Ω -10j 25Ω 10Ω -25j -100j -50j +90° r P 2.2 ±180° 10 2.1 2.2 Scale for |S21| 2.0GHz 2.1 2.0GHz Freq [GHz] 1.00 1.10 1.20 +250j 1.30 1.40 1.50 ∞ 1.60 1.70 1.80 -250j 1.90 2.00 2.10 2.11 S11 2.12 S22 2.13 2.14 2.15 2.16 2.17 2.18 2.19 2.20 2.30 2.40 2.50 0° 2.60 2.70 2.80 2.90 3.00 m i l e S12 0.1 Scale for |S 12| -90° S21 4 S11 MAG 0.950 0.950 0.951 0.950 0.941 0.930 0.908 0.876 0.814 0.694 0.489 0.224 0.204 0.188 0.180 0.183 0.196 0.215 0.243 0.277 0.318 0.360 0.760 0.861 0.862 0.845 0.831 0.821 0.825 0.836 ANG 163.5 161.1 158.1 155.2 151.7 147.6 142.4 136.3 128.2 118.0 108.2 121.0 127.2 135.9 146.1 156.7 167.0 175.5 -178.1 -173.5 -170.9 -169.4 170.4 145.0 126.3 108.0 86.9 62.1 33.0 3.1 S21 MAG ANG 0.506 -14.4 0.495 -19.4 0.507 -24.5 0.539 -30.1 0.598 -36.8 0.696 -43.7 0.849 -52.7 1.102 -64.1 1.508 -79.2 2.156 -99.7 3.135 -128.0 4.441 -164.8 4.579 -169.0 4.728 -173.3 4.881 -177.6 5.015 177.7 5.168 173.0 5.305 168.0 5.442 163.0 5.569 157.8 5.692 152.3 5.820 146.6 5.331 87.3 3.406 42.4 2.183 14.7 1.551 -6.1 1.180 -25.0 0.945 -43.3 0.761 -62.7 0.597 -80.7 a in y r S12 MAG ANG 0.001 -37.4 0.001 -8.8 0.001 -19.5 0.001 -53.7 0.001 -40.4 0.001 -17.3 0.001 -32.0 0.002 -34.4 0.004 -38.3 0.006 -57.1 0.010 -81.7 0.017 -118.2 0.017 -122.3 0.018 -126.6 0.019 -131.0 0.019 -135.6 0.020 -140.1 0.022 -144.4 0.022 -150.2 0.023 -154.4 0.024 -159.1 0.024 -164.8 0.026 138.3 0.019 98.7 0.014 75.5 0.011 57.6 0.010 44.1 0.008 21.4 0.007 7.5 0.007 -12.2 S22 MAG ANG 0.940 -178.3 0.943 -179.3 0.944 179.9 0.945 178.7 0.947 178.0 0.943 177.1 0.941 176.2 0.931 175.2 0.933 173.8 0.925 172.4 0.916 169.3 0.872 162.4 0.859 161.8 0.848 160.6 0.829 160.0 0.814 158.9 0.796 158.0 0.777 157.1 0.750 156.1 0.721 155.3 0.690 154.9 0.656 154.5 0.453 -173.8 0.699 -161.4 0.837 -166.0 0.889 -169.7 0.920 -172.7 0.935 -175.5 0.943 -177.2 0.949 -179.1