Fairchild NDS9948 Dual 60v p-channel powertrenchï mosfet Datasheet

NDS9948
Dual 60V P-Channel PowerTrench MOSFET
General Description
Features
This P-Channel MOSFET is a rugged gate version of
Fairchild Semiconductor’s advanced PowerTrench
process. It has been optimized for power management
applications requiring a wide range of gate drive voltage
ratings (4.5V – 20V).
• –2.3 A, –60 V
Applications
• Fast switching speed
•
•
•
• High performance trench technology for extremely
low RDS(ON)
• Low gate charge (9nC typical)
Power management
Load switch
Battery protection
• High power and current handling capability
DD1
DD1
D2
D
RDS(ON) = 250 mΩ @ VGS = –10 V
RDS(ON) = 500 mΩ @ VGS = –4.5 V
4
5
DD2
6
3
Q1
2
7
SO-8
Pin 1 SO-8
G2
S2 S
G1
S1 G
VDSS
TA=25oC unless otherwise noted
Parameter
Drain-Source Voltage
VGSS
Gate-Source Voltage
ID
Drain Current
– Continuous
(Note 1a)
– Pulsed
PD
Ratings
Units
–60
V
±20
V
–2.3
A
–10
Power Dissipation for Dual Operation
2
Power Dissipation for Single Operation
(Note 1a)
1.6
(Note 1b)
1.0
(Note 1c)
TJ, TSTG
1
S
Absolute Maximum Ratings
Symbol
8
S
Q2
Operating and Storage Junction Temperature Range
W
0.9
–55 to +175
°C
78
°C/W
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1c)
135
°C/W
(Note 1)
40
°C/W
Package Marking and Ordering Information
Device Marking
Device
Reel Size
Tape width
Quantity
NDS9948
NDS9948
13’’
12mm
2500 units
2010 Fairchild Semiconductor Corporation
NDS9948 Rev B1(W)
NDS9948
January 2010
Symbol
TA = 25°C unless otherwise noted
Parameter
Test Conditions
Min Typ
Max
Units
15
–10
mJ
Drain-Source Avalanche Ratings (Note 2)
W DSS
Drain-Source Avalanche Energy
IAR
Drain-Source Avalanche Current
Single Pulse, VDD=–54 V
A
Off Characteristics
BVDSS
∆BVDSS
∆TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
ID = –250 µA
VGS = 0 V,
ID = –250 µA, Referenced to25°C
–60
V
–52
mV/°C
–2
–25
100
µA
Gate–Body Leakage, Forward
VGS = 0 V
VDS = –40 V,
VDS = –40 V,VGS = 0 V TJ =–55°C
VGS = 20 V,
VDS = 0 V
Gate–Body Leakage, Reverse
VGS = –20 V
–100
nA
On Characteristics
VDS = 0 V
nA
(Note 2)
ID = –250 µA
VDS = VGS,
ID = –250 µA, Referenced to25°C
–1
–1.5
4
–3
V
138
175
225
250
500
433
VGS(th)
∆VGS(th)
∆TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
VGS = –10 V,
ID = –2.3 A
VGS = –4.5 V, ID = –1.6 A
VGS = –10 V,ID = –2.3A, TJ =125°C
VGS = –10 V,
VDS = –5 V
gFS
Forward Transconductance
VDS = –10 V,
ID = –2.3 A
5
VDS = –30 V,
f = 1.0 MHz
V GS = 0 V,
394
pF
53
pF
23
pF
mV/°C
–10
mΩ
A
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn–On Delay Time
tr
Turn–On Rise Time
(Note 2)
VDD = –30 V,
VGS = –10 V,
ID = –1 A,
RGEN = 6 Ω
6
12
ns
9
18
ns
td(off)
Turn–Off Delay Time
16
29
ns
tf
Turn–Off Fall Time
3
6
ns
Qg
Total Gate Charge
9
13
nC
Qgs
Gate–Source Charge
Qgd
Gate–Drain Charge
VDS = –30 V,
VGS = –10 V
ID = –2.3 A,
1.4
nC
1.7
nC
NDS9948 Rev B1(W)
NDS9948
Electrical Characteristics
Symbol
Parameter
A
= 25°C unless otherwise noted
Test Conditions
Min Typ
Max
Units
–0.8
–1.7
–1.2
A
V
Drain–Source Diode Characteristics and Maximum Ratings
IS
VSD
trr
Maximum Continuous Drain–Source Diode Forward Current
IS = –1.7 A(Note 2)
Drain–Source Diode Forward
VGS = 0 V,
Voltage
IF = –2.3A,
VGS = 0 V,
Reverse Recovery Time
dIF/dt = 100A/µs
25
nS
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a)
78°C/W when
mounted on a
2
0.5in pad of 2
oz copper
b)
125°C/W when
mounted on a
2
0.02 in pad of
2 oz copper
`
c)
135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
NDS9948 Rev B1(W)
NDS9948
Electrical Characteristics (cont.) T
NDS9948
Typical Characteristics
10
-4.5V
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
1.8
VGS = -10V
-6.0V
-4.0V
-ID, DRAIN CURRENT (A)
8
-3.5V
6
-3.0V
4
2
0
VGS=-3.5V
1.6
1.4
-4.0V
-4.5V
1.2
-6.0V
-10V
1
0.8
0
1
2
3
4
5
6
0
2
4
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
10
0.5
ID = -1A
ID = -2.3A
VGS = -10V
1.8
RDS(ON), ON-RESISTANCE (OHM)
RDS(ON), NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
8
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
2
1.6
1.4
1.2
1
0.8
0.6
0.4
0.45
0.4
0.35
TA = 125oC
0.3
0.25
0.2
TA = 25oC
0.15
0.1
-50
-25
0
25
50
75
100
125
150
175
2
4
o
6
8
10
-VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
withTemperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
6
25oC
TA = -55oC
-IS, REVERSE DRAIN CURRENT (A)
VDS = -5V
5
-ID, DRAIN CURRENT (A)
6
-ID, DRAIN CURRENT (A)
125oC
4
3
2
1
0
1
1.5
2
2.5
3
3.5
-VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
4
VGS =0V
10
TA = 125oC
1
25oC
0.1
-55oC
0.01
0.001
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
-VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
NDS9948 Rev B1(W)
NDS9948
Typical Characteristics
600
ID = -2.3A
VDS = -20V
f = 1 MHz
VGS = 0 V
-30V
500
8
CAPACITANCE (pF)
-VGS, GATE-SOURCE VOLTAGE (V)
10
-40V
6
4
CISS
400
300
200
COSS
2
100
CRSS
0
0
0
2
4
6
8
10
0
10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
30
50
60
50
P(pk), PEAK TRANSIENT POWER (W)
100µ
10
1ms
RDS(ON) LIMIT
10ms
100ms
1
1s
VGS = -10V
SINGLE PULSE
RθJA = 135oC/W
0.1
10s
DC
TA = 25oC
0.01
0.1
1
10
100
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
40
30
20
10
0
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
-VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
r(t), NORMALIZED EFFECTIVE TRANSIENT
THERMAL RESISTANCE
40
Figure 8. Capacitance Characteristics.
100
-ID, DRAIN CURRENT (A)
20
-VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 10. Single Pulse Maximum
Power Dissipation.
1
D = 0.5
RθJA(t) = r(t) * RθJA
0.2
0.1
o
RθJA = 135 C/W
0.1
0.05
P(pk)
0.02
0.01
t1
0.01
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, TIME (sec)
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
NDS9948 Rev B1(W)
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PDP SPM™
AccuPower™
FlashWriter® *
®*
FPS™
Power-SPM™
Auto-SPM™
The Power Franchise®
F-PFS™
PowerTrench®
Build it Now™
®
PowerXS™
FRFET®
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™
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Saving our world, 1mW/W/kW at a time™
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EZSWITCH™*
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™*
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®
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®
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Motion-SPM™
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SuperSOT™-8
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®
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tm
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Definition of Terms
Datasheet Identification
Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
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First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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Rev. I46
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