NDS9948 Dual 60V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V – 20V). • –2.3 A, –60 V Applications • Fast switching speed • • • • High performance trench technology for extremely low RDS(ON) • Low gate charge (9nC typical) Power management Load switch Battery protection • High power and current handling capability DD1 DD1 D2 D RDS(ON) = 250 mΩ @ VGS = –10 V RDS(ON) = 500 mΩ @ VGS = –4.5 V 4 5 DD2 6 3 Q1 2 7 SO-8 Pin 1 SO-8 G2 S2 S G1 S1 G VDSS TA=25oC unless otherwise noted Parameter Drain-Source Voltage VGSS Gate-Source Voltage ID Drain Current – Continuous (Note 1a) – Pulsed PD Ratings Units –60 V ±20 V –2.3 A –10 Power Dissipation for Dual Operation 2 Power Dissipation for Single Operation (Note 1a) 1.6 (Note 1b) 1.0 (Note 1c) TJ, TSTG 1 S Absolute Maximum Ratings Symbol 8 S Q2 Operating and Storage Junction Temperature Range W 0.9 –55 to +175 °C 78 °C/W Thermal Characteristics RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1c) 135 °C/W (Note 1) 40 °C/W Package Marking and Ordering Information Device Marking Device Reel Size Tape width Quantity NDS9948 NDS9948 13’’ 12mm 2500 units 2010 Fairchild Semiconductor Corporation NDS9948 Rev B1(W) NDS9948 January 2010 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 15 –10 mJ Drain-Source Avalanche Ratings (Note 2) W DSS Drain-Source Avalanche Energy IAR Drain-Source Avalanche Current Single Pulse, VDD=–54 V A Off Characteristics BVDSS ∆BVDSS ∆TJ IDSS Drain–Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current IGSSF IGSSR ID = –250 µA VGS = 0 V, ID = –250 µA, Referenced to25°C –60 V –52 mV/°C –2 –25 100 µA Gate–Body Leakage, Forward VGS = 0 V VDS = –40 V, VDS = –40 V,VGS = 0 V TJ =–55°C VGS = 20 V, VDS = 0 V Gate–Body Leakage, Reverse VGS = –20 V –100 nA On Characteristics VDS = 0 V nA (Note 2) ID = –250 µA VDS = VGS, ID = –250 µA, Referenced to25°C –1 –1.5 4 –3 V 138 175 225 250 500 433 VGS(th) ∆VGS(th) ∆TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain–Source On–Resistance ID(on) On–State Drain Current VGS = –10 V, ID = –2.3 A VGS = –4.5 V, ID = –1.6 A VGS = –10 V,ID = –2.3A, TJ =125°C VGS = –10 V, VDS = –5 V gFS Forward Transconductance VDS = –10 V, ID = –2.3 A 5 VDS = –30 V, f = 1.0 MHz V GS = 0 V, 394 pF 53 pF 23 pF mV/°C –10 mΩ A S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Switching Characteristics td(on) Turn–On Delay Time tr Turn–On Rise Time (Note 2) VDD = –30 V, VGS = –10 V, ID = –1 A, RGEN = 6 Ω 6 12 ns 9 18 ns td(off) Turn–Off Delay Time 16 29 ns tf Turn–Off Fall Time 3 6 ns Qg Total Gate Charge 9 13 nC Qgs Gate–Source Charge Qgd Gate–Drain Charge VDS = –30 V, VGS = –10 V ID = –2.3 A, 1.4 nC 1.7 nC NDS9948 Rev B1(W) NDS9948 Electrical Characteristics Symbol Parameter A = 25°C unless otherwise noted Test Conditions Min Typ Max Units –0.8 –1.7 –1.2 A V Drain–Source Diode Characteristics and Maximum Ratings IS VSD trr Maximum Continuous Drain–Source Diode Forward Current IS = –1.7 A(Note 2) Drain–Source Diode Forward VGS = 0 V, Voltage IF = –2.3A, VGS = 0 V, Reverse Recovery Time dIF/dt = 100A/µs 25 nS Notes: 1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. a) 78°C/W when mounted on a 2 0.5in pad of 2 oz copper b) 125°C/W when mounted on a 2 0.02 in pad of 2 oz copper ` c) 135°C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0% NDS9948 Rev B1(W) NDS9948 Electrical Characteristics (cont.) T NDS9948 Typical Characteristics 10 -4.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 VGS = -10V -6.0V -4.0V -ID, DRAIN CURRENT (A) 8 -3.5V 6 -3.0V 4 2 0 VGS=-3.5V 1.6 1.4 -4.0V -4.5V 1.2 -6.0V -10V 1 0.8 0 1 2 3 4 5 6 0 2 4 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 1. On-Region Characteristics. 10 0.5 ID = -1A ID = -2.3A VGS = -10V 1.8 RDS(ON), ON-RESISTANCE (OHM) RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 8 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 2 1.6 1.4 1.2 1 0.8 0.6 0.4 0.45 0.4 0.35 TA = 125oC 0.3 0.25 0.2 TA = 25oC 0.15 0.1 -50 -25 0 25 50 75 100 125 150 175 2 4 o 6 8 10 -VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation withTemperature. Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 6 25oC TA = -55oC -IS, REVERSE DRAIN CURRENT (A) VDS = -5V 5 -ID, DRAIN CURRENT (A) 6 -ID, DRAIN CURRENT (A) 125oC 4 3 2 1 0 1 1.5 2 2.5 3 3.5 -VGS, GATE TO SOURCE VOLTAGE (V) Figure 5. Transfer Characteristics. 4 VGS =0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. NDS9948 Rev B1(W) NDS9948 Typical Characteristics 600 ID = -2.3A VDS = -20V f = 1 MHz VGS = 0 V -30V 500 8 CAPACITANCE (pF) -VGS, GATE-SOURCE VOLTAGE (V) 10 -40V 6 4 CISS 400 300 200 COSS 2 100 CRSS 0 0 0 2 4 6 8 10 0 10 Qg, GATE CHARGE (nC) Figure 7. Gate Charge Characteristics. 30 50 60 50 P(pk), PEAK TRANSIENT POWER (W) 100µ 10 1ms RDS(ON) LIMIT 10ms 100ms 1 1s VGS = -10V SINGLE PULSE RθJA = 135oC/W 0.1 10s DC TA = 25oC 0.01 0.1 1 10 100 SINGLE PULSE RθJA = 135°C/W TA = 25°C 40 30 20 10 0 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) -VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9. Maximum Safe Operating Area. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 40 Figure 8. Capacitance Characteristics. 100 -ID, DRAIN CURRENT (A) 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 10. Single Pulse Maximum Power Dissipation. 1 D = 0.5 RθJA(t) = r(t) * RθJA 0.2 0.1 o RθJA = 135 C/W 0.1 0.05 P(pk) 0.02 0.01 t1 0.01 t2 TJ - TA = P * RθJA(t) Duty Cycle, D = t1 / t2 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, TIME (sec) Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. NDS9948 Rev B1(W) TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. PDP SPM™ AccuPower™ FlashWriter® * ®* FPS™ Power-SPM™ Auto-SPM™ The Power Franchise® F-PFS™ PowerTrench® Build it Now™ ® PowerXS™ FRFET® CorePLUS™ Global Power ResourceSM Programmable Active Droop™ CorePOWER™ QFET® Green FPS™ CROSSVOLT™ TinyBoost™ QS™ Green FPS™ e-Series™ CTL™ TinyBuck™ Quiet Series™ Gmax™ Current Transfer Logic™ TinyCalc™ RapidConfigure™ GTO™ DEUXPEED® TinyLogic® ™ IntelliMAX™ Dual Cool™ TINYOPTO™ ISOPLANAR™ EcoSPARK® TinyPower™ EfficentMax™ Saving our world, 1mW/W/kW at a time™ MegaBuck™ TinyPWM™ EZSWITCH™* SignalWise™ MICROCOUPLER™ TinyWire™ ™* SmartMax™ MicroFET™ TriFault Detect™ SMART START™ MicroPak™ TRUECURRENT™* ® SPM MicroPak2™ ® μSerDes™ STEALTH™ MillerDrive™ Fairchild® SuperFET™ MotionMax™ Fairchild Semiconductor® SuperSOT™-3 Motion-SPM™ UHC® FACT Quiet Series™ SuperSOT™-6 OptiHiT™ ® Ultra FRFET™ FACT SuperSOT™-8 OPTOLOGIC® UniFET™ FAST® OPTOPLANAR® SupreMOS™ ® VCX™ FastvCore™ SyncFET™ VisualMax™ FETBench™ Sync-Lock™ XS™ tm tm tm *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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