Diode Semiconductor Korea MBRF1030 - - - MBRF10100 VOLTAGE RANGE: 30 - 100 V CURRENT: 10 A SCHOTTKY BARRIER RECTIFIERS FEATURES ITO-220AC High s urge capacity. For us e in low voltage, high frequency inverters , free 111wheeling, and polarity protection applications . 4.5± 0.2 10.2± 0.2 3.1+0.2 -0.1 4.0± 0.3 13.5± 0.5 Cas e:JEDEC ITO-220AC,m olded plas tic body Term inals :Solderable per MIL-STD-750, 1 1 2 ? 3.2± 0.2 PIN 1 MECHANICAL DATA 8.2± 0.2 Guard ring for over voltage protection. 16.5± 0.3 15.2± 0.5 High current capacity, low forward voltage drop. φ 3 .3± 0.1 Metal s ilicon junction, m ajority carrier conduction. 2.6± 0.2 1.4± 0.1 0.6± 0.1 Method 2026 Polarity: As m arked 0.6± 0.1 5.0± 0.1 Pos ition: Any Dimensions in millimeters Weight: 0.056 ounces,1.587 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 am bient tem perature unles s otherwis e s pecified. Single phase,half wave,60Hz,resistive or inductive load.For capactive load,derate current by 20%. MBRF MBRF MBRF MBRF MBRF MBRF MBRF MBRF UNITS 1030 1035 1040 1045 1050 1060 1090 10100 Maximum recurrent peak reverse voltage V RRM 30 35 40 45 50 60 90 100 V Maximum RMS V oltage V RMS 21 25 28 32 35 42 63 70 V Maximum DC blocking voltage V DC 30 35 40 45 50 60 90 100 V Maximum average forw ard total device m rectified current @TC = 133°C IF(AV) 10 A Peak forw ard surge current 8.3ms single half b sine-w ave superimposed on rated load IFSM 150 A Maximum forw ard (I F=10A,TC=25 voltage (I F=10A,TC=125 (Note 1) (I F=20A ,TC=25 (IF=20A ,TC=125 Maximum reverse current at rated DC blocking voltage ) ) ) VF ) @TC =25 @TC =125 IR - 0.80 0.80 0.57 0.84 0.70 0.95 0.65 0.95 0.72 0.85 0.75 0.1 6.0 3) 15 Maximum thermal resistance (Note2) R θJC 4.0 Operating junction temperature range TJ - 55 ---- + 150 TSTG - 55 ---- + 175 Storage temperature range V mA /W NOTE: 1. Pulse test:300μs pulse width,1% duty cy cle. 2. Thermal resistance from junction to case. 3.T C =100 www.diode.kr MBRF1030 - - - MBRF10100 Diode Semiconductor Korea AVERAGE FORWARD OUTPUT CURRENT, AMPERES FIG.2 -- FORWARD DERATING CURVE 150 120 AMPERES PEAK FORWARD SURGE CURRENT, FIG.1 -- PEAK FORWARD SURGE CURRENT 8.3ms Single Half Sine Wave TJ=125 90 60 30 0 10 1 100 10 8 6 4 2 0 25 50 NUMBER OF CYCLES AT 60HZ MBR1080-MBR10100 MBR1050-MBR1060 10 P u ls e w id t h = 3 0 0 1 % D u t y C y c le .4 .6 .8 1.0 1 .2 1 .4 1 .6 1 .8 s 2.0 INSTANTANEOUS FORWARD VOLTAGE, VOLTS 2.2 INSTANTANEOUS REVERSE CURRENT, MICRO AMPERES INSTANTANEOUS FORWARD CURRENT, AMPERES MBR1030-MBR1045 .2 125 150 FIG.4 -- TYPICAL REVERSE CHARACTERISTIC 200 1 100 CASE TEMPERATURE, FIG.3 -- TYPICAL FORWARD CHARACTERISTIC 100 75 1.0 MBRF1030-MBRF1060 TC=125 MBRF1090-MBRF10100 0.1 T C=25 0.01 .001 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE,% www.diode.kr