Databook.fxp 1/13/99 2:09 PM Page F-38 F-38 01/99 NJ450L Process Silicon Junction Field-Effect Transistor ¥ Low-Current ¥ Low Gate Leakage Current ¥ High Input Impedance G S-D Absolute maximum ratings at 25¡C free-air temperature. Gate Current, Ig Operating Junction Temperature, Tj Storage Temperature, Ts 10 mA +150°C – 65°C to +175°C Devices in this Databook based on the NJ450L Process. S-D G Datasheet 2N6550 IF4500 IF4501 IFN860 Die Size = 0.028" X 0.028" All Bond Pads = 0.004" Sq. Substrate is also Gate. At 25°C free air temperature: NJ450L Process Static Electrical Characteristics Gate Source Breakdown Voltage V(BR)GSS Reverse Gate Leakage Current IGSS Drain Saturation Current (Pulsed) IDSS Gate Source Cutoff Voltage VGS(OFF) Min Typ Max – 25 – 25 V IG = – 1 µA, VDS = ØV – 50 pA VGS = – 15V, VDS = ØV mA VDS = 15V, VGS = ØV V VDS = 15V, ID = 1 nA 5 – 0.1 –4 Unit Test Conditions Dynamic Electrical Characteristics Forward Transconductance (Pulsed) gfs 100 mS VDS = 15V, VGS = ØV f = 1 kHz Input Capacitance Ciss 35 pF VDS = ØV, VGS = – 10V f = 1 MHz Feedback Capacitance Crss 10 pF VDS = ØV, VGS = – 10V f = 1 MHz Equivalent Noise Voltage ēN 0.9 1000 N. Shiloh Road, Garland, TX 75042 (972) 487-1287 FAX (972) 276-3375 nV/√HZ VDG = 4V, ID = 5 mA f = 1 kHz www.interfet.com Databook.fxp 1/13/99 2:09 PM Page F-39 F-39 01/99 NJ450L Process Silicon Junction Field-Effect Transistor Drain Current as a Function of VDS Gfs as a Function of VGS(OFF) VGS(OFF) = Ð2.2 V 150 150 Transconductance in mS Drain Current in mA VGS = Ø V 125 VGS = – 0.5 V 100 VGS = –1.0 V 75 VGS = –1.5 V 50 VGS = –2.0 V 5 10 15 0 – 0.5 – 1.0 – 1.5 – 2.0 – 2.5 Drain to Source Voltage in Volts Gate Source Cutoff Voltage in Volts Drain Saturation Current as a Function of VGS(OFF) Gfs as a Function of IDSS 500 – 3.0 120 400 300 200 100 0 –1 –2 –3 –4 –5 100 80 60 40 20 –6 0 50 100 150 200 250 Drain Source Cutoff Voltage in Volts Drain Saturation Current in mA Noise as a Function of Frequency Capacitance as a Function of VGS 4.0 300 100 VDS = Ø IDSS = 35 mA VDG = 4 V ID = 5 mA 3.0 Capacitance in pF Noise Voltage in nV/√Hz 50 20 Transconductance in mS Drain Saturation Current in mA 0 100 2.0 1.0 80 60 40 Ciss 20 Crss 10 100 1K Frequency in Hz 10K 100K 0 –4 –8 – 12 Gate Source Voltage in Volts – 16