Data Sheet HAT2204C R07DS1180EJ0600 (Previous: REJ03G0448-0500) Rev.6.00 Mar 19, 2014 Silicon N Channel MOS FET Power Switching Features • Low on-resistance RDS(on) = 26m Ω typ.(at VGS = 4.5 V) • Low drive current • High density mounting • 1.8 V gate drive device Outline RENESAS Package code: PWSF0006JA-A (Package name: CMFPAK - 6) Index band 4 5 6 2 3 4 5 DDD D 1. Source 2. Drain 3. Drain 4. Drain 5. Drain 6. Gate 6 G 1 2 3 S 1 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body - Drain diode reverse Drain current Channel dissipation Channel temperature Storage temperature Symbol VDSS VGSS ID ID (pulse)Note1 IDR Pch Note2 Tch Tstg Ratings 12 ±8 3.5 14 3.5 900 150 –55 to +150 Unit V V A A A mW °C °C Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. When using the glass epoxy board (FR4 40 x 40 x 1.6mm) R07DS1180EJ0600 Rev.6.00 Mar 19, 2014 Page 1 of 6 HAT2204C Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Gate to Source breakdown voltage Gate to Source leakage current Drain to Source leakage current Gate to Source cutoff voltage Drain to Source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Total Gate charge Gate to Source charge Gate to Drain charge Turn - on delay time Rise time Turn - off delay time Fall time Body - Drain diode forward voltage Symbol V(BR)DSS V(BR)GSS IGSS IDSS VGS(off) RDS(on) RDS(on) RDS(on) |yfs| Ciss Coss Crss Qg Qgs Qgd td(on) tr Min 12 ±8 — — 0.3 — — — 8.5 — — — — — — — — Typ — Max — Unit V — — — 26 34 45 13 770 115 50 9 1.5 2 10 9.5 ±10 1 1.2 34 44 69 — — — — — — — — — μA μA V mΩ mΩ mΩ S pF pF pF nC nC nC ns ns td(off) tf VDF — — — 36 5 0.8 — — 1.1 ns ns V Test Conditions ID = 10 mA, VGS = 0 IG = ±10 μA, VDS = 0 VGS = ±6.4 V, VDS = 0 VDS = 12 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 1.8 A, VGS = 4.5 VNote3 ID = 1.8 A, VGS = 2.5 VNote3 ID = 1.8 A, VGS = 1.8 VNote3 ID = 1.8 A, VDS = 10 V Note3 VDS = 10 V VGS = 0 f = 1 MHz VDD = 10 V VGS = 4.5 V ID = 3.5 A ID = 1.8 A, VGS = 4.5 V VDS = 10 V, RL = 5.6 Ω, Rg = 4.7 Ω IF = 3.5 A, VGS = 0 Note3 Notes: 3. Pulse test R07DS1180EJ0600 Rev.6.00 Mar 19, 2014 Page 2 of 6 HAT2204C Main Characteristics Power vs.Temperature Dreating ID (A) Drain Current 1 100 150 16 Ta (°C) 1 3 10 30 100 VDS (V) Typical Transfer Characteristics Typical Output Characteristics 20 Pulse Test 25°C 4.5 V 2.5 V 1.8 V 16 −25°C Tc = 75 °C 12 1.6 V 8 1.4 V 4 8 4 VDS = 10 V Pulse Test VGS = 1.2 V 2 4 6 Drain to Source Voltage 8 10 VDS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 160 Drain to Source Saturation Voltage VDS(on) (mV) s Drain to Source Voltage 12 0 m RDS(on) 0.01 0.03 0.1 0.3 ID (A) 20 m s Operation in this area is limited by 0.1 200 10 n io at 0.3 0.03 50 1 = r pe O 0.4 PW 3 C 0.8 10 μs 10 Drain Current Pch (W) board.(FR4 40 x 40 x 1.6 mm) 1.2 When using the FR4 board. 100 μs 30 D Power Dissipation When using the glass epoxy Ambient Temperature ID (A) Ta = 25°C,1 shot pulse Test condition 0 Drain Vurrent Maximum Safe Operation Area 100 1.6 0 1000 1 2 3 Gate to Source Voltage 4 5 VGS (V) Drain to Source On State Resistance vs. Drain Current Pulse Test Pulse Test 120 ID = 3.5 A 80 100 40 0 2 4 6 Gate to Source Voltage R07DS1180EJ0600 Rev.6.00 Mar 19, 2014 VGS = 1.8 V 1.8 A 2.5 V 1A 4.5 V 8 VGS (V) 10 10 0.1 1 Drain Current 10 100 ID (A) Page 3 of 6 HAT2204C Forward Transfer Admittance |yfs| (S) Static Drain to Source On State Resistance vs. Temperature 100 80 1.8 A ID = 3.5 A 60 VGS = 1.8 V 1A 40 2.5 V 1, 1.8 A 20 4.5 V 0 −25 3.5 A 1, 1.8, 3.5 A Pulse Test 0 25 50 75 100 125 150 Case Temperature 100 30 Forward Transfer Admittance vs. Drain Current Tc = −25°C 25°C 10 75°C 3 1 0.3 0.1 0.1 VDS = 10 V Pulse Test 0.3 Tc (°C) VDD = 12 V 10 V 5V 2 VGS (V) 0 20 4 8 12 16 Gate Charge Qg (nC) VGS = 0 f = 1 MHz 1000 Ciss 300 Coss 100 Crss 30 10 3 1 0 4 2 6 8 Drain to Source Voltage Reverse Drain Current vs. Source to Drain Voltage 1000 12 10 VDS (V) Switching Characteristics 5V 12 Switching Time t (ns) IDR (A) 4 VDD 16 100 ID (A) 3000 Capacitance C (pF) VDD = 12 V 10 V 5V 20 20 Reverse Drain Current 6 VGS 0 30 10 10000 8 ID = 3.5 A Gate to Source Voltage Drain to Source Voltage VDS (V) 40 10 3 Typical Capacitance vs. Drain to Source Voltage Dynamic Input Characteristics 30 1 Drain Current VGS = 0 , -5 V 8 tr 100 td(off) td(on) 10 tf 4 Pulse Test 0 0.4 0.8 1.2 Source to Drain Voltage R07DS1180EJ0600 Rev.6.00 Mar 19, 2014 1.6 2.0 VSD (V) 1 0.1 0.3 1 3 Drain Current 10 30 100 ID (A) Page 4 of 6 HAT2204C Switching Time Test Circuit Switching Time Waveform Vout Monitor Vin Monitor 90% D.U.T. RL Vin 4.7 Ω Vin 4.5 V VDS = 10 V Vout 10% 10% 90% td(on) R07DS1180EJ0600 Rev.6.00 Mar 19, 2014 tr 10% 90% td(off) tf Page 5 of 6 HAT2204C Package Dimensions JEITA Package Code ⎯ Package Name CMFPAK-6 RENESAS Code PWSF0006JA-A Previous Code CMFPAK-6 / CMFPAK-6V MASS[Typ.] 0.0065g D A e c E A HE A x M LP L S b A e A2 Reference Symbol A A1 y S S e1 b l1 b1 c Pattern of terminal position areas A-A Section A A1 A2 b c D E e HE L LP x y b1 e1 l1 Dimension in Millimeters Min 0.7 0 0.7 0.15 0.1 1.9 1.6 2.05 0.1 0.15 Nom 0.2 0.15 2.0 1.7 0.65 2.1 0.2 Max 0.8 0.01 0.79 0.3 0.25 2.1 1.8 2.15 0.3 0.45 0.05 0.05 0.3 1.9 0.4 Ordering Information Orderable Part Number HAT2204C-EL-E R07DS1180EJ0600 Rev.6.00 Mar 19, 2014 Quantity 3000 pcs Shipping Container Taping Page 6 of 6 Notice 1. Descriptions of circuits, software and other related information in this document are provided only to illustrate the operation of semiconductor products and application examples. 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