ON MV209 Silicon epicap diode Datasheet

MMBV109LT1, MV209
Preferred Devices
Silicon Epicap Diodes
Designed for general frequency control and tuning applications;
providing solid−state reliability in replacement of mechanical tuning
methods.
Features
•
•
•
•
High Q with Guaranteed Minimum Values at VHF Frequencies
Controlled and Uniform Tuning Ratio
Available in Surface Mount Package
Pb−Free Packages are Available
http://onsemi.com
26−32 pF VOLTAGE VARIABLE
CAPACITANCE DIODES
3
Cathode
MAXIMUM RATINGS (TC = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Reverse Voltage
VR
30
Vdc
Forward Current
IF
200
mAdc
Forward Power Dissipation
MMBV109LT1
@ TA = 25°C
Derate above 25°C
MV209
@ TA = 25°C
Derate above 25°C
PD
Junction Temperature
Storage Temperature Range
200
2.0
mW
mW/°C
200
1.6
mW
mW/°C
TJ
+125
°C
Tstg
−55 to +150
°C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Reverse Breakdown Voltage
(IR = 10 mAdc)
Symbol
Min
Typ
Max
Unit
V(BR)R
30
−
−
Vdc
IR
−
−
0.1
mAdc
TCC
−
300
−
ppm/°C
Reverse Voltage Leakage Current
(VR = 25 Vdc)
Diode Capacitance Temperature Coefficient (VR = 3.0 Vdc, f = 1.0 MHz)
2
Cathode
SOT−23
TO−92
1
Anode
1
Anode
MARKING
DIAGRAMS
3
1
2
SOT−23 (TO−236)
CASE 318−08
STYLE 8
M4A M G
G
1
M4A = Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
1
2
TO−92 (TO−226AC)
CASE 182
STYLE 1
MV
209
AYWW G
G
MV209 = Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 5
1
Publication Order Number:
MMBV109LT1/D
MMBV109LT1, MV209
Ct, Diode Capacitance
VR = 3.0 Vdc, f = 1.0 MHz
pF
Package
Shipping†
SOT−23
3,000 / Tape & Reel
SOT−23
(Pb−Free)
3,000 / Tape & Reel
SOT−23
10,000 / Tape & Reel
SOT−23
(Pb−Free)
10,000 / Tape & Reel
TO−92
1,000 Units / Bag
TO−92
(Pb−Free)
1,000 Units / Bag
Device
MMBV109LT1
MMBV109LT1G
MMBV109LT3
MMBV109LT3G
MV209
MV209G
Q, Figure of Merit
VR = 3.0 Vdc
f = 50 MHz
CR, Capacitance Ratio
C3/C25
f = 1.0 MHz (Note 1)
Min
Nom
Max
Min
Min
Max
26
29
32
200
5.0
6.5
1. CR is the ratio of Ct measured at 3 Vdc divided by Ct measured at 25 Vdc.
40
1000
36
Q, FIGURE OF MERIT
CT , CAPACITANCE − pF
32
28
24
20
16
12
VR = 3 Vdc
TA = 25°C
100
f = 1.0 MHz
TA = 25°C
8
4
0
1
3
10
30
10
100
Figure 2. FIGURE OF MERIT
C t , DIODE CAPACITANCE (NORMALIZED)
I R , REVERSE CURRENT (nA)
1000
Figure 1. DIODE CAPACITANCE
20
10
6.0
VR = 20 Vdc
2.0
1.0
0.6
0.2
0.1
0.06
0.02
0.01
0.006
−40
100
f, FREQUENCY (MHz)
100
60
0.002
0.001
−60
10
VR, REVERSE VOLTAGE (VOLTS)
−20
0
+20
+40
+60
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
−75
+80 +100 +120 +140
VR = 3.0 Vdc
f = 1.0 MHz
Ct [ Cc + Cj
−50
−25
0
+25
+50
+75
TA, AMBIENT TEMPERATURE
TA, AMBIENT TEMPERATURE
Figure 3. LEAKAGE CURRENT
Figure 4. DIODE CAPACITANCE
NOTES ON TESTING AND SPECIFICATIONS
http://onsemi.com
2
+100 +125
MMBV109LT1, MV209
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AN
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD
THICKNESS IS THE MINIMUM THICKNESS OF
BASE MATERIAL.
4. 318−01 THRU −07 AND −09 OBSOLETE, NEW
STANDARD 318−08.
D
SEE VIEW C
3
HE
E
c
1
2
b
DIM
A
A1
b
c
D
E
e
L
L1
HE
0.25
e
q
A
L
A1
L1
VIEW C
MIN
0.89
0.01
0.37
0.09
2.80
1.20
1.78
0.10
0.35
2.10
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.13
0.18
2.90
3.04
1.30
1.40
1.90
2.04
0.20
0.30
0.54
0.69
2.40
2.64
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
SCALE 10:1
0.8
0.031
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
3
MIN
0.035
0.001
0.015
0.003
0.110
0.047
0.070
0.004
0.014
0.083
INCHES
NOM
0.040
0.002
0.018
0.005
0.114
0.051
0.075
0.008
0.021
0.094
MAX
0.044
0.004
0.020
0.007
0.120
0.055
0.081
0.012
0.029
0.104
MMBV109LT1, MV209
PACKAGE DIMENSIONS
TO−92 (TO−226AC)
CASE 182−06
ISSUE L
A
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND ZONE R IS
UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
B
R
SEATING
PLANE
ÉÉ
ÉÉ
D
L
P
J
K
SECTION X−X
X X
D
G
H
V
1
2
C
DIM
A
B
C
D
G
H
J
K
L
N
P
R
V
INCHES
MIN
MAX
0.175
0.205
0.170
0.210
0.125
0.165
0.016
0.021
0.050 BSC
0.100 BSC
0.014
0.016
0.500
−−−
0.250
−−−
0.080
0.105
−−−
0.050
0.115
−−−
0.135
−−−
MILLIMETERS
MIN
MAX
4.45
5.21
4.32
5.33
3.18
4.19
0.407
0.533
1.27 BSC
2.54 BSC
0.36
0.41
12.70
−−−
6.35
−−−
2.03
2.66
−−−
1.27
2.93
−−−
3.43
−−−
STYLE 1:
PIN 1. ANODE
2. CATHODE
N
N
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4
For additional information, please contact your
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MMBV109LT1/D