MBR30200CT MBRB30200CT MBR30200CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0769, Rev. - Green Products MBR30200CT /MBRB30200CT /MBR30200CT-1 SCHOTTKY RECTIFIER Applications: • • • • Switching power supply Converters Free-Wheeling diodes Reverse battery protection Features: • • • • • • • • • 150 °C TJ operation Center tap configuration Low forward voltage drop High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance High frequency operation Guard ring for enhanced ruggedness and long term reliability This is a Pb − Free Device All SMC parts are traceable to the wafer lot Additional testing can be offered upon request MBR30200CT TO-220AB Case styles MBRB30200CT D2PAK Mechanical Dimensions: In Inches / mm MBR30200CT-1 TO-262 TO-220AB • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR30200CT MBRB30200CT MBR30200CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0769, Rev. - Green Products Symbol A A1 A2 b b1 c c1 D D1 E E1 E2 e H L L1 L2 L3 e e1 e2 e3 D2PAK Dimensions in millimeters Min. Typical Max. 4.55 0 2.59 0.71 0.36 1.17 8.55 6.40 10.01 7.6 9.98 14.6 2.00 1.17 0 4.70 0.10 2.69 0.81 1.27 0.38 1.27 8.70 0.61 1.37 8.85 10.16 10.31 10.08 2.54 15.1 2.30 1.27 10.18 0.25BSC 5° 4° 4° 4.85 0.25 2.89 0.96 15.6 2.70 1.40 2.20 8° TO-262 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR30200CT MBRB30200CT MBR30200CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0769, Rev. - Green Products Marking Diagram: Where XXXXX is YYWWL MBR B 30 200 CT/CT-1 SSG YY WW L MBR30200CT = Device Type = Package type = Forward Current (30A) = Reverse Voltage (200V) = Configuration = SSG = Year = Week = Lot Number MBRB30200CT Cautions：Molding resin Epoxy resin UL:94V-0 Ordering Information: Device Package TO-220AB (Pb-Free) D²PAK (Pb-Free) MBR30200CT MBRB30200CT Shipping 50pcs / tube 800pcs / reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification. Maximum Ratings: Characteristics Peak Inverse Voltage Max. Average Forward Peak Repetitive Forward Current(per leg) Max. Peak One Cycle Non-Repetitive Surge Current (per leg) Symbol VRWM IF(AV) IFRM IFSM Condition 50% duty cycle @TC = 133°C, rectangular wave form Rated VR square wave, 20KHz TC = 133°C Surge applied at rated load conditions halfwave, single phase,60Hz Max. 200 Units V 30 A 20 A 150 A • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR30200CT MBRB30200CT MBR30200CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0769, Rev. - Green Products Electrical Characteristics: Characteristics Max. Forward Voltage Drop (per leg) * Max. Reverse Current (per leg) * Symbol * Max. Units VF1 @ 15 A, Pulse, TJ = 25 °C 0.90 V VF2 @ 15 A, Pulse, TJ = 125 °C @VR = rated VR TJ = 25 °C @VR = rated VR TJ = 125 °C @VR = 5V, TC = 25 °C fSIG = 1MHz Measured lead to lead 5 mm from package body - 0.70 V 1.0 mA 6.0 mA 400 pF 8.0 nH 10,000 V/μs Condition - Specification -55 to +150 -55 to +150 Units °C °C IR1 IR2 Max. Junction Capacitance (per leg) Typical Series Inductance (per leg) Max. Voltage Rate of Change Condition CT LS dv/dt Pulse Width < 300µs, Duty Cycle <2% Thermal-Mechanical Specifications: Characteristics Max. Junction Temperature Max. Storage Temperature Maximum Thermal Resistance Junction to Case Maximum Thermal Resistance, Case to Heat Sink Maximum Thermal Resistance, Case to Heat Sink Approximate Weight Case Style Symbol TJ Tstg RθJC DC operation 2.0 °C/W RθJA DC operation 50 °C/W RθCS Mounting surface, smooth and greased 0.50 °C/W 2 g wt TO-220AB D2PAK TO-262 • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • MBR30200CT MBRB30200CT MBR30200CT-1 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0769, Rev. - Green Products 100 10 0 5 10 15 20 25 30 35 40 TJ=125℃ 100 10 1 TJ=25℃ 0.1 0.01 0.001 10 20 30 40 50 60 70 80 90 Percent of Rated Peak Reverse Voltage (%) Reverse Voltage (V) Fig.1-Typical Junction Capacitance Instantaneous Forward Current (A) Junction Capacitance (PF) TJ=25℃ Instantaneous Reverse Current (μA) 1000 1000 Fig.2-Typical Reverse Characteristics 100 TJ=125℃ 10 TJ=25℃ 1 0.4 0.5 0.6 0.7 0.8 0.9 1 Forward Voltage Drop (V) Fig.3-Typical Instantaneous Forward Voltage Characteristics • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn • 100 SANGDEST MICROELECTRONICS Technical Data Data Sheet N0769, Rev. - MBR30200CT MBRB30200CT MBR30200CT-1 Green Products DISCLAIMER: 1- The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact the SMC - Sangdest Microelectronics (Nanjing) Co., Ltd sales department for the latest version of the datasheet(s). 2- In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, medical equipment , and safety equipment) , safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement . 3- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to the datasheet(s). SMC - Sangdest Microelectronics (Nanjing) Co., Ltd assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in the datasheets. 4- In no event shall SMC - Sangdest Microelectronics (Nanjing) Co., Ltd be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 5- No license is granted by the datasheet(s) under any patents or other rights of any third party or SMC - Sangdest Microelectronics (Nanjing) Co., Ltd. 6- The datasheet(s) may not be reproduced or duplicated, in any form, in whole or part, without the expressed written permission of SMC Sangdest Microelectronics (Nanjing) Co., Ltd. 7- The products (technologies) described in the datasheet(s) are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety nor are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.. • Weiqi Street, Airport Development Zone, Jiangning District, Nanjing, China 211113 (86) 25-87123907 • • FAX (86) 25-87123900 • World Wide Web Site - http://www.sangdest.com.cn • E-Mail Address - sales@ sangdest.com.cn •